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onsemi MMBZ33VALT3G
- Part No.:
- MMBZ33VALT3G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBZ33VALT3G.pdf
- Description:
- TVS DIODE 26VWM 46VC SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,381
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Product details
Overview
MMBZ33VALT3G from onsemi is a dual common-anode Zener diode array in SOT-23 package, designed for transient overvoltage and ESD protection of two independent signal lines. It features 33 V nominal Zener breakdown voltage (±5%), 40 W peak pulse power at 1.0 ms, clamping voltage of 46 V at 0.87 A, and IEC 61000-4-2 Level 4 (±30 kV contact) ESD rating - deployed in USB interfaces, industrial I/O ports, and microprocessor bus lines.
For engineers reviewing the MMBZ33VALT3G datasheet, pinout, applications, or equivalent options, this device serves as a space-constrained, dual-line TVS solution with verified bidirectional/unidirectional configuration flexibility, low leakage (<50 nA @ 26 V), and automotive-grade AEC-Q101 qualification when ordered with SZ prefix.
Technical Context
This dual-junction Zener operates in either unidirectional mode (pins 1–3 or 2–3) or bidirectional mode (pins 1–2), leveraging a shared anode (pin 3) to clamp transients on two separate lines simultaneously. Its 40 W peak pulse power rating is validated per Figure 6's 1.0 ms rectangular waveform, with thermal resistance of 417 °C/W on alumina substrate.
The device delivers precise voltage regulation with ±5% tolerance, temperature coefficient of +0.87 mV/°C, and low dynamic impedance (ZZT = 1.0 Ω @ IZT = 1 mA). Clamping performance is characterized at IPP = 0.87 A, where VC = 46 V ensures robust protection without overstressing downstream ICs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VBR) | 33 V nominal, 31.35–34.65 V range @ IT = 1 mA - ensures stable clamping threshold across production lot and temperature. |
| Peak Pulse Power (Ppk) | 40 W @ 1.0 ms - protects against IEC 61000-4-5 surge events up to 40 W without failure. |
| Clamping Voltage (VC) | 46 V @ IPP = 0.87 A - limits transient voltage seen by protected ICs to safe levels during ESD or surge. |
| ESD Rating | IEC 61000-4-2 Level 4: ±30 kV contact discharge - meets industrial and medical equipment immunity requirements. |
| Leakage Current (IR) | <50 nA @ VRWM = 26 V - minimizes standby power loss and avoids false triggering in high-impedance circuits. |
| Package | SOT-23 (TO-236), 2.90 × 1.30 × 1.00 mm - enables high-density PCB layout with automated assembly compatibility. |
| Operating Temperature | −55 °C to +150 °C - supports deployment in under-hood automotive, industrial control, and outdoor embedded systems. |
Pinout & Package
SOT-23 package (Case 318, Style 12) with void-free thermosetting plastic body, UL 94 V-0 flammability rating, and Pb-free/RoHS-compliant finish. Designed for reflow soldering at 260 °C for 10 seconds.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode 1 | First protected line cathode - connects to signal line 1; reverse-biased during overvoltage event. |
| Pin 2 | Cathode 2 | Second protected line cathode - connects to signal line 2; enables dual-line protection in single footprint. |
| Pin 3 | Anode (Common) | Shared anode tied to ground or reference rail - forms two independent Zener junctions with pins 1 and 2. |
Key Features
| Feature | Design Value |
|---|---|
| Dual common-anode topology | Protects two independent signal paths (e.g., D+ and D−) using one SOT-23 footprint - saves >50% board area vs. discrete dual TVS. |
| Configurable unidirectional/bidirectional operation | Pins 1–3 or 2–3 used for unidirectional clamping; pins 1–2 used for bidirectional - adapts to RS-485, CAN, or USB signal polarity needs. |
| IEC 61000-4-2 Level 4 compliance | ±30 kV contact discharge rating - exceeds EN 61000-6-2 immunity requirements for industrial end equipment. |
| Low clamping ratio (VC/VBR) | 46 V / 33 V ≈ 1.39 - ensures minimal overvoltage overshoot during fast transients, preserving signal integrity. |
| AEC-Q101 qualified variant available | SZMMBZ33VALT3G version supports automotive applications with PPAP documentation and site-specific process controls. |
Applications
| USB 2.0 Data Line Protection | Industrial I/O Port Protection |
|---|---|
|
Use Scenario: Protecting D+ and D− lines of USB 2.0 peripherals against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Dual-line transient voltage suppressor clamping surges before they reach the USB transceiver IC. Use Value: Prevents latch-up or damage to USB PHY while maintaining signal rise/fall times due to low capacitance (<50 pF). |
Use Scenario: Safeguarding 24 V digital input channels in PLC modules exposed to field wiring transients. IC Role / Device Role / Timing Role: Common-anode Zener array absorbing inductive kickback and lightning-induced surges on two isolated inputs. Use Value: Eliminates need for two separate SOT-23 TVS devices, reducing BOM count and layout complexity without compromising protection level. |
| Microprocessor Bus Protection | Automotive Sensor Interface Protection |
|
Use Scenario: Shielding address/data/control buses (e.g., between MCU and external flash) from board-level ESD coupling. IC Role / Device Role / Timing Role: Low-leakage Zener pair suppressing fast transients on parallel bus lines while avoiding DC loading. Use Value: Maintains logic-level integrity with IR < 50 nA at 26 V, preventing false reads or timing skew in high-speed bus operation. |
Use Scenario: Protecting LIN or SENT sensor signal lines in engine control units from load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Automotive-qualified dual Zener (SZ variant) providing 40 W surge handling and −55 °C to +150 °C operation. Use Value: Enables single-device protection of differential sensor pairs (e.g., crankshaft position sensor outputs) meeting AEC-Q100 Grade 0 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-line Zener protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMF33AT1G | Single-channel SOD-123, 33 V, 200 W peak power - higher pulse rating but occupies 2× footprint for dual-line use. | Requires two devices for dual-line protection; better for high-energy surges but less space-efficient. | Select when surge energy exceeds 40 W or when layout allows separate placement per line. |
| TPD2E001DRYR | Two-channel ESD array (0.8 pF/channel), 3.6 V working voltage - optimized for high-speed data lines, not power-line transients. | Designed for USB/HDMI ESD only; lacks Zener clamping for sustained overvoltage or 40 W surge capability. | Prefer for high-frequency signal integrity-critical apps (e.g., USB 3.0); avoid for 24–40 V industrial bus protection. |
Compared with SMF33AT1G and TPD2E001DRYR, the MMBZ33VALT3G uniquely balances dual-line integration, 40 W surge capacity, and 33 V clamping in a single SOT-23 - making it optimal for space-constrained industrial I/O and automotive sensor interfaces where both ESD and moderate surge protection are required.
Availability
MMBZ33VALT3G is available at Aetrix Electronics and suitable for industrial I/O protection, automotive sensor interfaces, and USB peripheral designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for MMBZ33VALT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The MMBZxxxALT1G series targets compact, high-reliability transient suppression in space-constrained systems - engineered specifically for dual-line ESD/surge protection without sacrificing electrical performance or manufacturability.
FAQ
What is the maximum clamping voltage of the MMBZ33VALT3G at its rated peak pulse current?
The MMBZ33VALT3G has a maximum clamping voltage (VC) of 46 V at its peak pulse current (IPP) of 0.87 A, measured per the 1.0 ms rectangular waveform in Figure 6 of the datasheet. This value ensures downstream components see no more than 46 V during transient events, directly supporting robust interface protection in 3.3 V or 5 V systems interfaced with 24–48 V domains. The MMBZ33VALT3G maintains this clamping performance across its full operating temperature range.
Can the MMBZ33VALT3G be used in bidirectional signal protection applications like RS-485 or CAN bus?
Yes - the MMBZ33VALT3G supports bidirectional operation when configured between pins 1 and 2 (cathodes), with pin 3 (common anode) grounded. This arrangement provides symmetrical clamping for differential signals, making it suitable for RS-485 receivers or CAN FD physical layer protection where ±33 V standoff and 46 V clamping are acceptable. The MMBZ33VALT3G's low leakage and matched junction characteristics ensure balanced response on both lines.
What is the difference between MMBZ33VALT1G and MMBZ33VALT3G?
The MMBZ33VALT1G is supplied in 3,000-unit 7-inch tape-and-reel packaging, while the MMBZ33VALT3G uses 10,000-unit 13-inch tape-and-reel packaging - identical electrically and mechanically. Both share the same SOT-23 package, 33 V Zener voltage, 40 W peak power, and IEC 61000-4-2 Level 4 ESD rating. The MMBZ33VALT3G is optimized for high-volume production runs requiring extended reel length and reduced changeover frequency.
Does the MMBZ33VALT3G meet automotive qualification standards?
The base MMBZ33VALT3G is not automotive-qualified, but its SZ-prefixed variant - SZMMBZ33VALT3G - is AEC-Q101 qualified, PPAP capable, and manufactured under automotive-specific process controls. That version includes enhanced traceability, extended temperature validation (−55 °C to +150 °C), and site-specific quality documentation. For automotive applications, specify SZMMBZ33VALT3G; the MMBZ33VALT3G remains ideal for industrial and commercial designs.
How does the thermal performance of the MMBZ33VALT3G compare between FR-5 board and alumina substrate?
On FR-5 board, the MMBZ33VALT3G has a thermal resistance (RJA) of 556 °C/W and steady-state power dissipation of 225 mW at 25 °C; on alumina substrate, RJA improves to 417 °C/W with 300 mW dissipation. This 25% lower thermal resistance on alumina enables higher continuous power handling in thermally demanding environments - critical for industrial motor drives or power supply monitoring circuits where ambient temperatures exceed 70 °C. The MMBZ33VALT3G's performance is validated per Notes 2 and 3 in the Maximum Ratings table.
MMBZ33VALT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26V
- Voltage - Breakdown (Min):
- 31.35V
- Voltage - Clamping (Max) @ Ipp:
- 46V
- Current - Peak Pulse (10/1000µs):
- 870mA
- Power - Peak Pulse:
- 40W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBZ33VALT3G FAQ
1.How can I place an order for MMBZ33VALT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ33VALT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ33VALT3G reliable?
The price and inventory of MMBZ33VALT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ33VALT3G is usually 5 days.
3.What payment methods are accepted for MMBZ33VALT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ33VALT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ33VALT3G?
MMBZ33VALT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ33VALT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ33VALT3G?
For technical support, including MMBZ33VALT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ33VALT3G requirements.
6.How does Aetrix verify that MMBZ33VALT3G is sourced from the original manufacturer or authorized distributors?
All MMBZ33VALT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ33VALT3G meets industry standards.
7.What is the process for return or replacement of MMBZ33VALT3G?
All MMBZ33VALT3G units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ33VALT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ33VALT3G part is unused and in its original packaging.
Return procedure for MMBZ33VALT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ33VALT3G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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