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onsemi MMBZ33VAWT1G
- Part No.:
- MMBZ33VAWT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
MMBZ33VAWT1G.pdf
- Description:
- TVS DIODE 26VWM 46VC SC70-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,682
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Product details
Overview
MMBZ33VAWT1G from onsemi is a dual common-anode Zener diode array designed for bidirectional or unidirectional transient voltage suppression in signal line protection. It features a nominal Zener voltage of 33 V, 40 W peak pulse power (1 ms), <50 nA reverse leakage at 26 V, clamping voltage of 46 V at 0.87 A, and SC-70 (SOT-323) package with pinout CATHODE1–ANODE–CATHODE2. It is used in ESD protection for USB, HDMI, and industrial I/O interfaces.
For engineers reviewing the MMBZ33VAWT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its dual-line common-anode topology, 33 V working peak reverse voltage, 46 V clamping performance under 0.87 A surge, UL 94 V-0 flammability rating, and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This device integrates two monolithic Zener junctions sharing a single anode terminal, enabling compact dual-line protection without discrete pairing. Its SC-70 package supports automated placement and high-density PCB layouts while maintaining thermal resistance of 618°C/W.
The MMBZ33VAWT1G operates in either unidirectional mode (pins 1–3 or 2–3) or bidirectional mode (pins 1–2), with breakdown voltage tightly specified at 31.35–34.65 V @ 1 mA and temperature coefficient of ±0.087 mV/°C - critical for stable clamping across industrial temperature ranges (−55°C to +150°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage | 33 V nominal, 31.35–34.65 V range @ 1 mA - ensures precise voltage threshold for overvoltage cutoff in 3.3 V/5 V/24 V system rails. |
| Peak Pulse Power | 40 W @ 1.0 ms per IEC 61000-4-5 waveform - sustains high-energy transients without failure in industrial surge environments. |
| Clamping Voltage | 46 V @ 0.87 A IPP - limits downstream IC stress during ESD events (IEC 61000-4-2 Level 4) and lightning-induced surges. |
| Reverse Leakage | <50 nA @ 26 V VRWM - minimizes standby current loss in battery-powered sensor nodes and low-power I/O circuits. |
| ESD Rating | HBM Class 3B (>16 kV), MM Class C (>400 V) - meets stringent electrostatic discharge immunity requirements for handheld and medical equipment. |
| Package | SC-70 (SOT-323), 3-pin, common-anode - enables dual-line protection in 2.2 mm × 1.35 mm footprint, saving >50% board area vs. two discrete SOD-323 devices. |
Pinout & Package
SC-70 (SOT-323) package with molded thermosetting plastic case, UL 94 V-0 rated, Pb-free, and optimized for reflow soldering (260°C/10 s). Designed for high-density automated assembly and space-constrained applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode 1 | First protected line input; connects to signal path requiring clamping to common anode reference. |
| Pin 2 | Cathode 2 | Second protected line input; enables independent or differential clamping when paired with Pin 1 and shared Pin 3. |
| Pin 3 | Anode | Common reference node; tied to ground or bias rail - defines polarity and enables dual-unidirectional or single-bidirectional configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Dual common-anode topology | Protects two independent signal lines (e.g., D+ and D−) using one SC-70 footprint - eliminates routing complexity and reduces BOM count. |
| 40 W peak pulse rating | Withstands 1 ms surges up to 40 W without degradation - suitable for IEC 61000-4-5 Level 3 (1 kV source impedance) compliance testing. |
| Low 50 nA leakage @ 26 V | Preserves signal integrity and battery life in always-on interfaces such as RS-485 receivers and CAN FD transceivers. |
| AEC-Q101 qualified (SZ variant) | Validated for automotive under-hood and infotainment applications - includes stress testing across temperature, humidity, and mechanical vibration profiles. |
Applications
| USB 2.0 Data Lines | HDMI Hot-Plug Detection |
|---|---|
Use Scenario: Protecting D+ and D− lines against ESD events during cable insertion/removal in portable docking stations. IC Role / Device Role / Timing Role: Dual-line transient voltage suppressor placed adjacent to USB connector, clamping fast-rising ESD pulses before they reach the PHY. Use Value: Prevents latch-up and permanent damage to USB transceivers by limiting voltage to ≤46 V during 15 kV HBM strikes - validated per IEC 61000-4-2. | Use Scenario: Safeguarding HDMI HPD (Hot-Plug Detect) and DDC (Display Data Channel) lines from contact discharge in consumer AV receivers. IC Role / Device Role / Timing Role: Bidirectional clamp between HPD and ground, responding within nanoseconds to voltage excursions beyond ±33 V. Use Value: Maintains reliable hot-plug signaling integrity by suppressing transients without adding capacitance (>30 pF) that would distort 3.3 V logic edges. |
| Industrial RS-485 Transceivers | Automotive Body Control Modules |
Use Scenario: Shielding half-duplex RS-485 bus lines (A/B) from induced surges in factory automation networks. IC Role / Device Role / Timing Role: Unidirectional Zener pair (Pin 1–3 and Pin 2–3) referenced to local ground, absorbing common-mode energy from long cable runs. Use Value: Enables robust 250 kbps communication over 1200 m cables by limiting bus voltage to safe levels during 4 kV EFT bursts - compliant with IEC 61000-4-4. | Use Scenario: Protecting LIN bus and sensor inputs (e.g., ambient temperature, door switch) in vehicle door modules exposed to load dump and jump-start conditions. IC Role / Device Role / Timing Role: Common-anode dual Zener configured for bidirectional clamping on LIN data line and wake-up input. Use Value: Survives 12 V system transients up to ±35 V and 400 V machine-model ESD - certified to AEC-Q101 and ISO 7637-2 Pulse 1/2a/5a. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-Zener transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PESD3V3Z2BT,115 (Nexperia) | 3.3 V working voltage, 12 V clamping @ 1 A, bidirectional only, 0.5 pF typical capacitance | Optimized for high-speed digital lines (USB 3.0, MIPI), not 33 V rail protection | Select when protecting low-voltage, high-frequency signals where capacitance <0.6 pF is mandatory. |
| SZMMBZ33VAWT1G (onsemi) | Identical electrical specs; AEC-Q101 qualified, PPAP-capable, automotive-grade traceability | Required for automotive OEM designs needing full PPAP documentation and lot-level traceability | Choose for automotive production programs where qualification and supply chain control are mandatory. |
Compared with PESD3V3Z2BT,115 and SZMMBZ33VAWT1G, the MMBZ33VAWT1G offers identical 33 V Zener performance and SC-70 packaging but lacks automotive certification - making it ideal for industrial and commercial systems where cost and availability outweigh formal qualification needs.
Availability
MMBZ33VAWT1G is available at Aetrix Electronics and suitable for USB interface protection, HDMI hot-plug circuits, industrial RS-485 networks, and automotive body electronics requiring stable component supply and consistent parametric performance across production lots.
Supply support for MMBZ33VAWT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient silicon solutions for automotive, industrial, cloud, medical, and IoT applications - with core expertise in analog, power management, and protection devices.
The MMBZxxVAWT1G series belongs to onsemi's transient voltage suppression portfolio, engineered specifically for compact, high-reliability ESD and surge protection in space-constrained and mission-critical electronic systems.
FAQ
What is the maximum clamping voltage of the MMBZ33VAWT1G under surge conditions?
The MMBZ33VAWT1G exhibits a maximum clamping voltage (VC) of 46 V at a peak pulse current (IPP) of 0.87 A, measured per the 1.0 ms rectangular waveform in Figure 5 of the onsemi datasheet. This value ensures downstream circuitry remains within safe operating limits during transient events such as ESD or inductive switching spikes. The MMBZ33VAWT1G maintains this clamping performance across its full operating temperature range of −55°C to +150°C.
Can the MMBZ33VAWT1G be used in bidirectional signal protection?
Yes, the MMBZ33VAWT1G supports bidirectional operation by connecting Pins 1 and 2 (both cathodes) across the protected line while referencing Pin 3 (anode) to ground - forming a symmetrical Zener pair. This configuration delivers ±33 V breakdown and ±46 V clamping, making it suitable for AC-coupled interfaces like HDMI DDC or audio lines. The MMBZ33VAWT1G's dual-junction structure inherently enables this mode without external components.
Is the MMBZ33VAWT1G RoHS-compliant and halogen-free?
Yes, the MMBZ33VAWT1G is Pb-free and RoHS-compliant, as confirmed by onsemi's marking "G" suffix and adherence to JEDEC JS-709E standards. The device uses halogen-free molding compound meeting IEC 61249-2-21 requirements, and its UL 94 V-0 flammability rating further validates material safety. All MMBZ33VAWT1G units shipped by Aetrix Electronics carry full compliance documentation traceable to onsemi's manufacturing lot records.
What is the thermal resistance and power derating behavior of the MMBZ33VAWT1G?
The MMBZ33VAWT1G has a junction-to-ambient thermal resistance (RJA) of 618°C/W on FR-5 board, resulting in a total power dissipation limit of 200 mW at 25°C ambient, derating linearly by 1.6 mW/°C above that temperature. This derating curve is defined in Figure 4 of the datasheet and must be applied in continuous-power designs - though the device is primarily intended for transient (non-repetitive) operation up to 40 W peak. The MMBZ33VAWT1G's SC-70 package enables efficient heat transfer in high-density layouts.
How does the MMBZ33VAWT1G compare to single-Zener alternatives like 1SMB33AT3G?
The MMBZ33VAWT1G provides dual-line protection in a single SC-70 package (2.2 mm × 1.35 mm), whereas the 1SMB33AT3G is a larger SMB-packaged single Zener (4.5 mm × 3.9 mm) requiring two devices and more PCB area for equivalent dual-line coverage. While both share 33 V nominal Zener voltage, the MMBZ33VAWT1G's lower leakage (<50 nA vs. ~1 µA) and tighter voltage tolerance (±4.5%) improve precision in low-power sensing applications. The MMBZ33VAWT1G is optimized for board space savings and coordinated dual-channel clamping.
MMBZ33VAWT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SC-70, SOT-323
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26V
- Voltage - Breakdown (Min):
- 31.35V
- Voltage - Clamping (Max) @ Ipp:
- 46V
- Current - Peak Pulse (10/1000µs):
- 870mA
- Power - Peak Pulse:
- 40W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-3 (SOT323)
MMBZ33VAWT1G FAQ
1.How can I place an order for MMBZ33VAWT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ33VAWT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ33VAWT1G reliable?
The price and inventory of MMBZ33VAWT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ33VAWT1G is usually 5 days.
3.What payment methods are accepted for MMBZ33VAWT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ33VAWT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ33VAWT1G?
MMBZ33VAWT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ33VAWT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ33VAWT1G?
For technical support, including MMBZ33VAWT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ33VAWT1G requirements.
6.How does Aetrix verify that MMBZ33VAWT1G is sourced from the original manufacturer or authorized distributors?
All MMBZ33VAWT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ33VAWT1G meets industry standards.
7.What is the process for return or replacement of MMBZ33VAWT1G?
All MMBZ33VAWT1G units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ33VAWT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ33VAWT1G part is unused and in its original packaging.
Return procedure for MMBZ33VAWT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ33VAWT1G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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