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onsemi MMBZ6V2ALT3G
- Part No.:
- MMBZ6V2ALT3G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBZ6V2ALT3G.pdf
- Description:
- TVS DIODE 3VWM 8.7VC SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,321
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Product details
Overview
MMBZ6V2ALT3G from onsemi is a dual common-anode Zener diode array in SOT-23 package, designed for transient voltage suppression and ESD protection of two independent signal lines. It features a nominal Zener breakdown voltage of 6.2 V (±5%), 24 W peak pulse power at 1.0 ms, clamping voltage of 8.7 V at 2.76 A, and IEC 61000-4-2 Level 4 (±30 kV contact) ESD rating - deployed in USB data lines, microcontroller I/O ports, and industrial sensor interfaces.
For engineers reviewing the MMBZ6V2ALT3G datasheet, pinout, applications, or equivalent options, key selection criteria include bidirectional/unidirectional configuration flexibility, low clamping voltage under surge, dual-line protection density, and automotive-grade reliability with AEC-Q101 qualification available in SZ-prefixed variants.
Technical Context
This device implements a monolithic dual-junction Zener structure with shared anode (Pin 3), enabling either two independent unidirectional TVS paths (Pins 1–3 and 2–3) or a single bidirectional path (Pins 1–2). Its silicon junction design delivers fast response to transients (<1 ns), low leakage (<0.5 µA at VRWM = 5.89 V), and stable voltage regulation across −55 °C to +150 °C junction temperature.
The SOT-23 package supports high-density PCB layouts and automated assembly, with thermal resistance RJA = 556 °C/W on FR-5 board. Its 24 W peak power rating applies to non-repetitive 1.0 ms rectangular pulses per Figure 6, derating linearly above 25 °C ambient per Figure 7.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VBR) | 6.2 V nominal (5.89–6.51 V range @ 1 mA); ensures precise clamping threshold for 5 V logic rail protection. |
| Clamping Voltage (VC) | 8.7 V @ IPP = 2.76 A; limits transient overvoltage to safe levels for downstream 3.3 V/5 V ICs. |
| Peak Pulse Power | 24 W @ 1.0 ms (unidirectional); handles IEC 61000-4-5 surges up to 1 A (8/20 µs) without failure. |
| ESD Rating | ±30 kV contact discharge (IEC 61000-4-2 Level 4); protects human-touch interfaces like buttons and connectors. |
| Leakage Current | <0.5 µA @ VRWM = 5.89 V; avoids signal integrity degradation in high-impedance analog/sensor circuits. |
| Package | SOT-23 (Case 318, Style 12); 2.90 × 1.30 × 1.00 mm footprint enables dual-line protection in <3 mm² board area. |
| Operating Temp | −55 °C to +150 °C; supports deployment in under-hood automotive modules and industrial PLC I/O terminals. |
Pinout & Package
SOT-23 package (Case 318, Style 12) with void-free thermosetting plastic body, UL 94 V-0 flammability rating, and Pb-free/RoHS-compliant finish. Designed for reflow soldering at 260 °C for 10 seconds.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode 1 | First Zener junction cathode; connects to protected line 1 in unidirectional mode or forms one terminal of bidirectional path. |
| Pin 2 | Cathode 2 | Second Zener junction cathode; connects to protected line 2 in unidirectional mode or completes bidirectional path with Pin 1. |
| Pin 3 | Anode (Common) | Shared anode node; ties both Zener junctions to GND or reference voltage - defines common return path for dual-line protection. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-line protection in one SOT-23 | Reduces PCB area by >50% vs. discrete dual-diode solutions - critical for space-constrained USB-C, HDMI, and IoT sensor nodes. |
| Configurable unidirectional/bidirectional mode | Enables flexible layout: Pins 1–3 + 2–3 for separate 5 V/3.3 V rails, or Pins 1–2 for ±5 V differential bus protection. |
| IEC 61000-4-2 Level 4 compliance | Validated ±30 kV contact discharge performance eliminates need for external ESD filters in consumer electronics front panels. |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes stress on protected ICs - e.g., keeps 3.3 V MCU I/O below absolute maximum rating during 8 kV ESD event. |
| AEC-Q101 qualified variant available | SZMMBZ6V2ALT3G meets automotive stress testing (temperature cycling, HAST, ESD), supporting infotainment and ADAS sensor interfaces. |
Applications
| USB 2.0 Data Line Protection | Microcontroller I/O Port Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines of embedded USB peripherals against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Dual unidirectional TVS clamp - Pin 1–3 guards D+, Pin 2–3 guards D−, common anode tied to system GND. Use Value: Prevents latch-up or gate oxide damage in USB transceivers by limiting transient voltage to ≤8.7 V during ±15 kV air discharge. |
Use Scenario: Shielding GPIO, UART, and SPI pins of ARM Cortex-M microcontrollers in industrial HMIs from cable discharge events. IC Role / Device Role / Timing Role: Per-pin transient suppressor - each cathode independently routes to a different I/O net; shared anode simplifies GND routing. Use Value: Maintains signal integrity with <0.5 µA leakage at 5.89 V, avoiding false triggers in high-impedance wake-up inputs. |
| Industrial Sensor Interface | Automotive LIN Bus Node |
Use Scenario: Safeguarding analog outputs (0–10 V, 4–20 mA) and digital status lines of pressure/temperature sensors exposed to field wiring surges. IC Role / Device Role / Timing Role: Bidirectional clamp between signal and shield (Pins 1–2), common anode (Pin 3) connected to chassis ground. Use Value: Withstands 24 W surge energy from inductive load switching, preventing sensor output drift or ADC saturation. |
Use Scenario: Protecting LIN transceiver TX/RX pins in body control modules against battery dump and load dump transients. IC Role / Device Role / Timing Role: Unidirectional suppression - Pin 1–3 on LIN bus line, Pin 2–3 on wake-up line; common anode to vehicle GND. Use Value: AEC-Q101-qualified SZ variant ensures operation at 150 °C junction temperature and passes 1000-cycle temperature cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-Zener TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PESD5V0S1BA,115 (Nexperia) | Single-channel 5.0 V unidirectional TVS; 30 kV IEC 61000-4-2; SOT-23 but no dual-junction architecture. | Requires two devices for dual-line protection; higher BOM count and PCB area vs. MMBZ6V2ALT3G's integrated dual cathode. | Select when only one line needs protection or when tighter 5.0 V clamping is required over 6.2 V nominal. |
| SZMMBZ6V2ALT1G (onsemi) | Identical electrical specs and SOT-23 package; differs only in tape-and-reel quantity (3,000 vs. 10,000 units) and AEC-Q101 qualification status. | Same circuit role and pinout; validated for automotive PPAP; preferred for Tier-1 automotive production programs. | Choose SZMMBZ6V2ALT1G for automotive designs requiring PPAP documentation; MMBZ6V2ALT3G suits high-volume industrial/commercial builds. |
Compared with PESD5V0S1BA,115, MMBZ6V2ALT3G reduces component count and layout complexity for dual-line protection; versus SZMMBZ6V2ALT1G, it offers identical performance with optimized logistics for volume commercial production - no PCB changes required between either alternative.
Availability
MMBZ6V2ALT3G is available at Aetrix Electronics and suitable for USB interface protection, microcontroller I/O hardening, and industrial sensor signal conditioning requiring stable component supply and long-term manufacturing continuity.
Supply support for MMBZ6V2ALT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MMBZxxxALT1G series targets compact, high-reliability transient suppression - engineered for space-constrained ESD-critical applications including portable electronics, automotive ECUs, and industrial I/O modules.
FAQ
What is the Zener breakdown voltage tolerance for MMBZ6V2ALT3G?
The MMBZ6V2ALT3G has a nominal Zener breakdown voltage of 6.2 V with a ±5% tolerance, specified as 5.89 V (min) to 6.51 V (max) at 1 mA test current. This tight tolerance ensures consistent clamping behavior across production lots and supports reliable protection of 5 V logic systems without overdesigning margin.
Can MMBZ6V2ALT3G be used in bidirectional TVS configurations?
Yes, MMBZ6V2ALT3G supports bidirectional operation by connecting protected lines between Pins 1 and 2, with Pin 3 (common anode) grounded. This configuration leverages both Zener junctions back-to-back to clamp positive and negative transients - ideal for differential buses like RS-485 or LIN where polarity reversal occurs.
What is the maximum clamping voltage of MMBZ6V2ALT3G under surge conditions?
The MMBZ6V2ALT3G exhibits a maximum clamping voltage (VC) of 8.7 V at peak pulse current (IPP) of 2.76 A, measured per the 1.0 ms rectangular waveform in Figure 6 of the datasheet. This value defines the upper voltage limit imposed on protected circuits during transient events, safeguarding 3.3 V and 5 V ICs from overvoltage stress.
Is MMBZ6V2ALT3G RoHS compliant and lead-free?
Yes, MMBZ6V2ALT3G is Pb-free and fully RoHS compliant, as confirmed in the datasheet's "Features" section and mechanical specifications. The device uses a corrosion-resistant, easily solderable finish and is rated for reflow soldering at 260 °C for 10 seconds - meeting J-STD-020 moisture sensitivity level 1 requirements.
How does the thermal resistance of MMBZ6V2ALT3G affect its power handling?
MMBZ6V2ALT3G has a junction-to-ambient thermal resistance (RJA) of 556 °C/W on FR-5 board. At 25 °C ambient, this limits continuous power dissipation to 225 mW; above that temperature, derating is required at 1.8 mW/°C. For transient suppression, the 24 W peak rating applies only to non-repetitive 1.0 ms pulses - not steady-state operation.
MMBZ6V2ALT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 2
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3V
- Voltage - Breakdown (Min):
- 5.89V
- Voltage - Clamping (Max) @ Ipp:
- 8.7V
- Current - Peak Pulse (10/1000µs):
- 2.76A
- Power - Peak Pulse:
- 24W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBZ6V2ALT3G FAQ
1.How can I place an order for MMBZ6V2ALT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBZ6V2ALT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBZ6V2ALT3G reliable?
The price and inventory of MMBZ6V2ALT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ6V2ALT3G is usually 5 days.
3.What payment methods are accepted for MMBZ6V2ALT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ6V2ALT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBZ6V2ALT3G?
MMBZ6V2ALT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBZ6V2ALT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBZ6V2ALT3G?
For technical support, including MMBZ6V2ALT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ6V2ALT3G requirements.
6.How does Aetrix verify that MMBZ6V2ALT3G is sourced from the original manufacturer or authorized distributors?
All MMBZ6V2ALT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ6V2ALT3G meets industry standards.
7.What is the process for return or replacement of MMBZ6V2ALT3G?
All MMBZ6V2ALT3G units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ6V2ALT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBZ6V2ALT3G part is unused and in its original packaging.
Return procedure for MMBZ6V2ALT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBZ6V2ALT3G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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