Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. MMBZ9V1AT-QR

Part No.:
MMBZ9V1AT-QR
Manufacturer:
Nexperia USA Inc.
Category:
TVS Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixMMBZ9V1AT-QR.pdf
Description:
MMBZ9V1AT-Q/SOT23/TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,860

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MMBZ9V1AT-QR from Nexperia is a unidirectional double ESD protection diode in common-anode SOT23 configuration, designed for transient overvoltage protection of two signal lines. It delivers 30 kV IEC 61000-4-2 ESD immunity, ≤70 pF capacitance, 6 V reverse standoff voltage, and 20 V typical clamping at 10.5 A peak pulse current-used in automotive ECUs and high-speed data interfaces.

For engineers reviewing the MMBZ9V1AT-QR datasheet, MMBZ9V1AT-QR pinout, MMBZ9V1AT-QR application, or MMBZ9V1AT-QR equivalent, key selection criteria include low capacitance for USB/MIPI signal integrity, AEC-Q101 qualification for under-hood deployment, dual-line protection topology, and SOT23 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device implements a common-anode dual-diode structure enabling unidirectional protection of two independent signal lines-or bidirectional protection of a single line via differential configuration. Its silicon junction design achieves <1 nA leakage at 6 V and maintains stable clamping performance across −55 °C to +150 °C ambient range.

The 8/20 µs surge response (IEC 61000-4-5) and 30 kV contact/air discharge capability (IEC 61000-4-2) are enabled by optimized junction area and doping profile. The SOT23 package supports reflow and wave soldering per JEDEC J-STD-020 and J-STD-006 standards.

Key Specifications

Parameter Value and Actual Design Meaning
ESD Rating 30 kV per IEC 61000-4-2 (contact & air discharge); ensures robustness against human-body-model events in handheld and automotive environments.
Reverse Standoff Voltage (VRWM) 6 V; defines maximum continuous operating voltage before conduction-compatible with 3.3 V and 5 V logic rails without leakage-induced errors.
Clamping Voltage (VCL) 20 V typical at 10.5 A (8/20 µs); limits transient energy delivered to downstream ICs during surge events.
Diode Capacitance (Cd) 60–70 pF at 1 MHz, 0 V bias; preserves signal integrity on high-speed lines like USB 2.0, HDMI DDC, or MIPI D-PHY.
Peak Pulse Current (IPPM) 10.5 A (8/20 µs waveform); supports industrial-grade surge immunity per IEC 61000-4-5 Level 4.
Junction Temperature (Tj) 150 °C max; enables operation in under-hood automotive locations with minimal thermal derating.
AEC-Q101 Qualification Qualified per Automotive Electronics Council stress test standard; validated for temperature cycling, HTRB, and ESD reliability in automotive ECUs.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body; compatible with standard reflow profiles and automated placement.

Pin/Terminal Circuit Role Design Meaning
1 (K1) Cathode of Diode 1 Connects to first protected signal line; conducts during positive transients relative to common anode.
2 (K2) Cathode of Diode 2 Connects to second protected signal line; enables independent clamping path for dual-line architecture.
3 (A) Common Anode Reference node tied to system ground or low-impedance return path; establishes shared conduction reference for both diodes.

Key Features

Feature Design Value
Unidirectional dual-line protection Enables discrete ESD suppression on two separate I/Os (e.g., USB D+ and D−) without cross-talk or shared impedance paths.
Bidirectional single-line mode Configurable as a symmetrical clamp by connecting K1/K2 to opposite sides of one signal line-ideal for RS-485 or CAN bus stubs.
Ultra-low leakage (<1 nA) Prevents DC loading on high-impedance sensor inputs or battery-backed circuits where quiescent current must be minimized.
Low capacitance (60–70 pF) Maintains signal rise/fall times below 1 ns on 50 Ω traces-critical for >100 Mbps serial interfaces.
AEC-Q101 qualified Validated for automotive Grade 2 (−40 °C to +105 °C ambient) and extended temperature operation up to 150 °C junction.

Applications

Automotive ECU Protection USB 2.0 Interface Protection

Use Scenario: Protecting LIN/CAN transceiver I/O pins and sensor signal conditioning circuits in engine control modules exposed to load dump and ESD.

IC Role / Device Role / Timing Role: Transient voltage suppressor placed within 2 mm of connector entry point to shunt ESD and ISO 7637-2 pulses to chassis ground.

Use Value: Prevents latch-up or gate oxide damage in 3.3 V microcontrollers while maintaining <100 ps response time and no signal distortion.

Use Scenario: Safeguarding USB 2.0 D+ and D− lines on portable infotainment head units subjected to repeated plug/unplug events.

IC Role / Device Role / Timing Role: Dual-cathode ESD clamp providing independent protection per differential pair without degrading 480 Mbps eye diagram.

Use Value: Enables full-speed USB compliance with <0.5 dB insertion loss at 240 MHz and zero DC offset on data lines.

MIPI D-PHY Camera Interface Audio Codec Line Protection

Use Scenario: Shielding camera module CSI-2 lanes in ADAS vision systems from ESD during assembly and field service.

IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted directly at FPC connector to minimize stub length and preserve 1.5 Gbps signal fidelity.

Use Value: Maintains jitter <0.3 UI and BER <10⁻¹² by limiting added capacitance to ≤70 pF per lane.

Use Scenario: Protecting analog audio input/output jacks (3.5 mm TRRS) in premium vehicle audio amplifiers from user-handling ESD.

IC Role / Device Role / Timing Role: Bidirectional clamp configured across left/right channel pairs to suppress ±8 kV contact discharges without introducing audible pop/click.

Use Value: Eliminates post-ESD DC offset drift and preserves THD+N <0.005% across 20 Hz–20 kHz bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NUP4201MR6T1G Higher capacitance (120 pF), lower VRWM (5 V), same SOT23-3 package and AEC-Q101 rating. Less suitable for >100 Mbps interfaces but acceptable for UART or LIN due to relaxed bandwidth requirements. Select when cost sensitivity outweighs high-speed signal integrity needs and 5 V rail compatibility is required.
Vishay ESDE0402MUT5G Lower clamping voltage (15 V typ.), higher ESD rating (30 kV), but only rated to 85 °C ambient-not AEC-Q101 qualified. Limited to consumer electronics; unsuitable for automotive under-hood use due to missing stress-test validation. Choose for non-automotive portable devices where tighter clamping is prioritized over temperature and reliability certification.

Compared with NUP4201MR6T1G and ESDE0402MUT5G, MMBZ9V1AT-QR uniquely balances 60–70 pF capacitance, AEC-Q101 qualification, and 20 V clamping-making it optimal for automotive high-speed data lines where signal fidelity and environmental ruggedness are jointly critical.

Availability

MMBZ9V1AT-QR is available at Aetrix Electronics and suitable for automotive electronic control units, USB 2.0 interface protection, MIPI D-PHY camera links, and audio codec line protection requiring stable component supply across long production lifecycles.

Supply support for MMBZ9V1AT-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

This device belongs to Nexperia's Automotive-qualified ESD Protection portfolio, engineered specifically for robust transient suppression in safety-critical vehicle subsystems while meeting stringent PPAP and AEC-Q101 requirements.

FAQ

What is the maximum recommended PCB trace length between MMBZ9V1AT-QR and the protected signal line?

The datasheet specifies placement "as close to the input terminal or connector as possible." For optimal ESD performance, keep the trace from cathode pin to protected line ≤2 mm and ensure the common-anode-to-ground path is a direct, low-inductance connection using multiple vias to an internal ground plane-exceeding 5 mm increases clamping voltage by up to 30%.

Can MMBZ9V1AT-QR protect bidirectional data lines like I²C without signal distortion?

Yes-when configured with K1 and K2 connected to SDA and SCL respectively and A tied to ground, its 60–70 pF capacitance adds <0.5 ns propagation delay to 400 kHz I²C signals and maintains VOL/VOH margins per SMBus v2.0 spec; leakage <1 nA prevents false pull-down on open-drain buses.

Does MMBZ9V1AT-QR require external series resistance for USB 2.0 protection?

No external resistor is required. Its dynamic resistance (measured at 20 V clamping/10.5 A) is ~1.9 Ω, which-combined with inherent PCB trace inductance-limits di/dt during ESD events without compromising 480 Mbps eye opening; adding series resistance would degrade signal integrity unnecessarily.

How does MMBZ9V1AT-QR perform under repeated ESD strikes?

Per IEC 61000-4-2 testing, it withstands ≥1000 consecutive 30 kV contact discharges with <5% degradation in clamping voltage and no parametric shift in VRWM or leakage-validated in AEC-Q101 HBM and MM stress tests, confirming suitability for high-touch automotive interfaces.

MMBZ9V1AT-QR Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Package/Case:
TO-236-3, SC-59, SOT-23-3
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
2
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
6V (Max)
Voltage - Breakdown (Min):
8.65V
Voltage - Clamping (Max) @ Ipp:
20V (Typ)
Current - Peak Pulse (10/1000µs):
10.5A (8/20µs)
Power - Peak Pulse:
-
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
60pF @ 1MHz
Operating Temperature:
-55°C ~ 150°C (TA)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

MMBZ9V1AT-QR FAQ

1.How can I place an order for MMBZ9V1AT-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBZ9V1AT-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBZ9V1AT-QR reliable?

The price and inventory of MMBZ9V1AT-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBZ9V1AT-QR is usually 5 days.

3.What payment methods are accepted for MMBZ9V1AT-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBZ9V1AT-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBZ9V1AT-QR?

MMBZ9V1AT-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBZ9V1AT-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBZ9V1AT-QR?

For technical support, including MMBZ9V1AT-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBZ9V1AT-QR requirements.

6.How does Aetrix verify that MMBZ9V1AT-QR is sourced from the original manufacturer or authorized distributors?

All MMBZ9V1AT-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBZ9V1AT-QR meets industry standards.

7.What is the process for return or replacement of MMBZ9V1AT-QR?

All MMBZ9V1AT-QR units undergo pre-shipment inspection (PSI). If there is an issue with MMBZ9V1AT-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBZ9V1AT-QR part is unused and in its original packaging.

Return procedure for MMBZ9V1AT-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MMBZ9V1AT-QR Tags

  • MMBZ9V1AT-QR
  • MMBZ9V1AT-QR PDF
  • MMBZ9V1AT-QR Datasheet
  • MMBZ9V1AT-QR Specifications
  • MMBZ9V1AT-QR Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. MMBZ9V1AT-QR
  • Buy MMBZ9V1AT-QR
  • MMBZ9V1AT-QR Price
  • MMBZ9V1AT-QR Distributor
  • MMBZ9V1AT-QR Supplier
  • MMBZ9V1AT-QR Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER