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Microchip Technology MPLAD18KP7.5AE3
- Part No.:
- MPLAD18KP7.5AE3
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- Nonstandard SMD
- Datasheet:
-
MPLAD18KP7.5AE3.pdf
- Description:
- TVS DIODE 7.5VWM 12.9VC PLAD
- Quantity:
- Payment:
- Shipping:
Inventory:9,446
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Product details
Overview
MPLAD18KP7.5AE3 from Microsemi is a unidirectional surface-mount transient voltage suppressor (TVS) designed for high-energy surge protection in aerospace, automotive, and industrial power systems. It delivers 18,000 W peak pulse power at 10/1000 μs, features a 7.5 V reverse standoff voltage (VWM), clamps to ≤12.9 V at 1396 A peak current, and exhibits 0.7 °C/W junction-to-case thermal resistance for efficient heat dissipation in lightning and load-dump protection circuits.
For engineers reviewing the MPLAD18KP7.5AE3 datasheet, MPLAD18KP7.5AE3 pinout, MPLAD18KP7.5AE3 application, or MPLAD18KP7.5AE3 equivalent, key selection criteria include its DO-160F Waveform 4 Level 4 compliance, IEC 61000-4-5 Class 1–5 secondary lightning capability with 42 Ω source impedance, RoHS-compliant e3 plating, and validated 1396 A IPP rating under standardized 10/1000 μs transients.
Technical Context
This TVS diode employs an avalanche breakdown mechanism to clamp fast-rising transients, with breakdown voltage V(BR) specified at 8.33–9.21 V and temperature coefficient αV(BR) of +6.0 mV/°C. Its low-profile thermoset epoxy package enables direct mounting on FR4 PCBs with optimized thermal pad layout per RF01215 Rev B.
The device meets AEC-Q101 stress testing requirements and supports MIL-PRF-19500 upscreening options. It provides pin-injection protection per RTCA/DO-160F Waveform 4 (6.4/69 μs) and Waveform 5A (40/120 μs), with derated PPP above 100°C case temperature per Figure 3.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPP) | 18,000 W @ 10/1000 μs - sustains multi-stroke lightning surges without degradation |
| Reverse Standoff Voltage (VWM) | 7.5 V - maximum continuous operating voltage before clamping initiates |
| Clamping Voltage (VC) | ≤12.9 V @ IPP = 1396 A - limits downstream circuit voltage during worst-case surge |
| Breakdown Voltage (V(BR)) | 8.33–9.21 V @ I(BR) - defines precise avalanche onset threshold for predictable triggering |
| Junction-to-Case Thermal Resistance | 0.7 °C/W - enables effective heat transfer to heatsink or copper plane for repeated surge duty |
| Standby Current (ID) | ≤750 μA @ VWM - ensures minimal leakage in standby, critical for battery-backed systems |
| Temperature Coefficient (αV(BR)) | +6.0 mV/°C - quantifies V(BR) drift over temperature for accurate system-level margining |
Pinout & Package
Package: Surface-mount PLAD (Plastic Low-Profile Anode-Diode) with metal base cathode termination. Void-free UL94V-0 epoxy body, tin-lead or RoHS-compliant matte-tin plating, ~1 g weight. Cathode is the metal base (bottom side); anode is top-side metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (top-side metallization) | Positive terminal for unidirectional conduction path | Connects to protected line; current flows anode-to-cathode during surge clamping |
| Cathode (metal base / bottom side) | Negative reference and thermal interface | Must be soldered to large copper pour or heatsink for thermal management and low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| DO-160F Waveform 4 Level 4 compliance | Validated for 6.4/69 μs pin injection at 25°C - meets aircraft avionics immunity requirements |
| IEC 61000-4-5 Class 1–5 support (42 Ω source) | Enables single-device secondary lightning protection across full equipment classification range |
| Moisture Sensitivity Level 1 | No dry-pack or bake-out required before reflow - simplifies SMT manufacturing flow |
| AEC-Q101 qualified | Validated reliability for automotive under-hood applications including load dump and ISO 7637-2 |
| RoHS-compliant e3 marking | Matte-tin plating meets JEDEC J-STD-020B solderability and environmental compliance |
Applications
| Aerospace Avionics Protection | Automotive Load Dump Suppression |
|---|---|
Use Scenario: Protecting ARINC 429 data lines and sensor inputs in commercial aircraft against DO-160F Section 22 lightning-induced transients. IC Role / Device Role / Timing Role: Primary transient shunt element placed at connector entry point to divert >10 kA surges away from signal conditioning ICs. Use Value: Enables compliance with RTCA DO-160F Waveform 4 Level 4 without external series impedance or filtering complexity. | Use Scenario: Safeguarding engine control unit (ECU) power inputs during alternator load dump events (ISO 7637-2 Pulse 5a/b). IC Role / Device Role / Timing Role: Fast-response clamping device mounted directly at ECU DC input rail to limit voltage to <14 V during 12 V system surges. Use Value: Prevents latch-up or destruction of 5 V/3.3 V regulators and microcontrollers by clamping within 100 ps of surge onset. |
| Industrial Motor Drive DC Bus | Renewable Energy Inverter Input |
Use Scenario: Protecting IGBT gate drivers and bus voltage monitors in variable-frequency drives subjected to switching-induced transients. IC Role / Device Role / Timing Role: Parallel-connected TVS on DC link capacitor terminals to absorb regenerative energy spikes during rapid deceleration. Use Value: Reduces need for oversized snubbers by absorbing up to 18 kW pulses without degradation over 1000+ cycles. | Use Scenario: Shielding solar PV string combiner box electronics from induced surges caused by nearby lightning strikes. IC Role / Device Role / Timing Role: Secondary protection stage downstream of Type II SPDs, clamping residual transients before they reach monitoring ICs and communication interfaces. Use Value: Achieves IEC 61000-4-5 Class 4 immunity with 2 Ω source impedance - critical for outdoor-rated inverters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5A | 600 W PPP rating, 5.0 V VWM, SMB package, RθJC = 15 °C/W | Limited to single-stroke surges; unsuitable for DO-160F multi-stroke or IEC 61000-4-5 Class 4+ | Select only for cost-sensitive consumer-grade designs with sub-1 kA surge exposure. |
| SMCJ7.5A | 1500 W PPP rating, same VWM, SMC package, RθJC = 2.5 °C/W | Cannot meet DO-160F Waveform 4 Level 4 or IEC 61000-4-5 Class 5 with 42 Ω source | Acceptable for basic automotive load dump where peak current < 200 A and repetition rate is low. |
Compared with SMBJ7.5A and SMCJ7.5A, the MPLAD18KP7.5AE3 delivers 30× higher peak power handling, 7× lower thermal resistance, and certified compliance with aviation and industrial multi-stroke standards-making it the sole choice for mission-critical surge environments requiring sustained 18 kW clamping performance.
Availability
MPLAD18KP7.5AE3 is available at Aetrix Electronics and suitable for aerospace avionics, automotive ECU protection, and industrial motor drive designs requiring stable component supply, long-term lifecycle assurance, and traceable high-reliability sourcing.
Supply support for MPLAD18KP7.5AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened solutions for aerospace, defense, and industrial markets.
The MPLAD series was developed specifically for high-energy transient suppression in safety-critical platforms, emphasizing multi-stroke survivability, DO-160F compliance, and thermal robustness in surface-mount form factors.
FAQ
What is the clamping voltage of MPLAD18KP7.5AE3 at its rated peak pulse current?
The MPLAD18KP7.5AE3 has a maximum clamping voltage (VC) of 12.9 V when subjected to its rated peak impulse current (IPP) of 1396 A under 10/1000 μs waveform conditions. This value is measured per Figure 3 in RF01215 Rev B and ensures downstream components remain below safe voltage thresholds during worst-case surge events. The low VC reflects optimized silicon geometry and low-inductance package design.
Does MPLAD18KP7.5AE3 meet AEC-Q101 qualification requirements?
Yes, MPLAD18KP7.5AE3 is tested and qualified to AEC-Q101 standards for discrete semiconductors. This includes stress tests for temperature cycling, humidity bias, high-temperature operating life, and surge current endurance. The qualification confirms suitability for automotive under-hood applications such as engine control units and battery management systems exposed to load dump and ISO 7637-2 transients.
How does the thermal resistance of MPLAD18KP7.5AE3 impact PCB layout?
The MPLAD18KP7.5AE3 has a junction-to-case thermal resistance (RθJC) of 0.7 °C/W, meaning effective heat removal depends critically on soldering the metal base cathode to a large copper area or external heatsink. PCB layout must use the recommended pad dimensions (A1=12.32–12.57 mm, C=14.86–15.11 mm) per RF01215 Rev B to maintain thermal performance and avoid derating of PPP during repetitive surges.
Is MPLAD18KP7.5AE3 compliant with DO-160F Section 22 lightning standards?
Yes, MPLAD18KP7.5AE3 is explicitly rated for RTCA DO-160F Section 22 multi-stroke lightning protection, including Waveform 4 (6.4/69 μs) Level 4 and Waveform 5A (40/120 μs) Level 4 compliance. Its 18,000 W PPP rating and low clamping voltage enable direct implementation in aircraft avionics without additional series impedance or cascaded protection stages.
What is the significance of the 'E3' suffix in MPLAD18KP7.5AE3?
'E3' denotes RoHS-compliant matte-tin plating per IPC/JEDEC J-STD-020B, replacing traditional tin-lead terminations. This ensures full compatibility with lead-free reflow profiles (peak 260°C for 10 s), eliminates hazardous substances, and maintains solderability and intermetallic formation control. The 'E3' marking is laser-etched on the device body and verified during lot acceptance testing.
MPLAD18KP7.5AE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- Nonstandard SMD
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 12.9V
- Current - Peak Pulse (10/1000µs):
- 1396A (1.396kA)
- Power - Peak Pulse:
- 18000W (18kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PLAD
MPLAD18KP7.5AE3 FAQ
1.How can I place an order for MPLAD18KP7.5AE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MPLAD18KP7.5AE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MPLAD18KP7.5AE3 reliable?
The price and inventory of MPLAD18KP7.5AE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MPLAD18KP7.5AE3 is usually 5 days.
3.What payment methods are accepted for MPLAD18KP7.5AE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MPLAD18KP7.5AE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MPLAD18KP7.5AE3?
MPLAD18KP7.5AE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MPLAD18KP7.5AE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MPLAD18KP7.5AE3?
For technical support, including MPLAD18KP7.5AE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MPLAD18KP7.5AE3 requirements.
6.How does Aetrix verify that MPLAD18KP7.5AE3 is sourced from the original manufacturer or authorized distributors?
All MPLAD18KP7.5AE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MPLAD18KP7.5AE3 meets industry standards.
7.What is the process for return or replacement of MPLAD18KP7.5AE3?
All MPLAD18KP7.5AE3 units undergo pre-shipment inspection (PSI). If there is an issue with MPLAD18KP7.5AE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MPLAD18KP7.5AE3 part is unused and in its original packaging.
Return procedure for MPLAD18KP7.5AE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MPLAD18KP7.5AE3 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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