Microchip Technology MPLAD36KP58AE3

Overview

MPLAD36KP58AE3 from Microsemi is a unidirectional surface-mount transient voltage suppressor (TVS) designed for high-energy surge protection in aerospace, automotive, and industrial power systems. It delivers 36 kW peak pulse power at 10/1000 μs, features a 58 V reverse standoff voltage (VWM), clamps to ≤93.6 V at 385 A peak pulse current (IPP), and operates across –55°C to +150°C junction temperature. It is widely deployed in aircraft lightning protection per RTCA DO-160 Section 22 and automotive load dump suppression.

For engineers reviewing the MPLAD36KP58AE3 datasheet, MPLAD36KP58AE3 pinout, MPLAD36KP58AE3 application, or MPLAD36KP58AE3 equivalent, key selection criteria include its 50°C/W junction-to-ambient thermal resistance, 1.0°C/W junction-to-case rating, RoHS-compliant matte-tin plating, and verified compliance with IEC 61000-4-2/4-4/4-5 and RTCA DO-160F Waveform 4 & 5A pin injection levels.

Technical Context

This TVS diode uses silicon avalanche breakdown architecture to achieve fast response (<5 ns clamping time) and stable clamping under multi-stroke transients. Its void-free UL94V-0 epoxy package and metal-base cathode construction minimize thermal resistance and enable direct heatsinking via the case bottom.

It is rated for 100% surge testing per lot, supports 0.05% duty factor impulse repetition, and meets AEC-Q101 stress requirements. The device's 10 μA maximum standby current at VWM and ±70 mV/°C breakdown voltage temperature coefficient ensure predictable behavior across wide temperature ranges in safety-critical environments.

Key Specifications

Pinout & Package

Package: PLAD (Plastic Leaded Anode Down) - surface-mount, low-profile thermoset epoxy case with metal base cathode terminal. Dimensions: 12.32 × 10.54 × 5.08 mm (L × W × H), weight ~1.85 g. Cathode is the entire metal base underside; anode is top-side metallization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ58A and SMCJ58A, the MPLAD36KP58AE3 provides 60× higher peak pulse power, 2.5× lower junction-to-case thermal resistance, and certified compliance with aviation-grade multi-stroke lightning standards-making it irreplaceable in safety-critical, high-energy surge environments.

Availability

MPLAD36KP58AE3 is available at Aetrix Electronics and suitable for aircraft avionics, automotive ECU power protection, and industrial 48 V DC bus applications requiring stable component supply, long-term lifecycle support, and traceable high-reliability sourcing.

Supply support for MPLAD36KP58AE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and timing solutions for aerospace, defense, and industrial markets.

The MPLAD36KP58AE3 belongs to Microsemi's PLAD-series high-power TVS family, engineered specifically for multi-stroke lightning and load dump protection in mission-critical power systems where thermal robustness and regulatory compliance are mandatory.

FAQ

What is the clamping voltage of MPLAD36KP58AE3 at its rated peak pulse current?

The MPLAD36KP58AE3 exhibits a maximum clamping voltage (VC) of 93.6 V when subjected to its rated peak pulse current of 385 A under 10/1000 μs waveform conditions. This value is guaranteed per datasheet Figure 3 and ensures downstream components remain below safe voltage thresholds during surge events. The clamping performance is validated across –55°C to +150°C operating range and remains stable due to the device's low dynamic impedance.

Is MPLAD36KP58AE3 qualified for automotive applications per AEC-Q101?

Yes, MPLAD36KP58AE3 is tested and qualified in accordance with AEC-Q101 requirements for discrete semiconductors. It undergoes stress tests including HTGB, HTRB, TST, and surge endurance, confirming reliability for under-hood automotive environments. Its 150°C max junction temperature rating and robust thermal design further support deployment in engine control units and battery management systems.

Does MPLAD36KP58AE3 require special PCB layout considerations?

Yes - the MPLAD36KP58AE3 requires a dedicated thermal pad on the PCB matching the metal base dimensions (12.32 × 10.54 mm) with multiple thermal vias to inner ground planes. The cathode (base) must be soldered directly to this pad for optimal heat dissipation; inadequate copper area increases junction temperature and reduces surge endurance. Pad layout guidelines are specified in RF01216 Rev B, page 6.

What does the "E3" suffix in MPLAD36KP58AE3 signify?

The "E3" suffix indicates RoHS-compliant matte-tin plating per JEDEC J-STD-609A, replacing traditional tin-lead terminations. This finish ensures compatibility with lead-free reflow profiles (up to 260°C for 10 seconds), eliminates Pb contamination risks, and maintains solderability per MIL-STD-750 Method 2026. All E3-marked MPLAD36KP58AE3 units meet EU Directive 2011/65/EU requirements.

Can MPLAD36KP58AE3 be used in bidirectional configurations?

No - MPLAD36KP58AE3 is a unidirectional TVS diode, as indicated by the "A" (not "CA") suffix. For bidirectional operation, the correct variant is MPLAD36KP58CA, which provides symmetrical clamping for AC-coupled or floating signal lines. Using MPLAD36KP58AE3 in bidirectional circuits may result in forward conduction failure or insufficient protection during negative transients.