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Microchip Technology MQ1N8150US/TR
- Part No.:
- MQ1N8150US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8150US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,521
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Product details
Overview
MQ1N8150US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency circuit protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 7.5 V working standoff voltage (VWM), making it suitable for ESD/EFT protection in aerospace and military signal lines.
For engineers reviewing the MQ1N8150US/TR datasheet, MQ1N8150US/TR pinout, MQ1N8150US/TR application, or MQ1N8150US/TR equivalent, key selection criteria include low-capacitance transient clamping, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 standards.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction incorporates internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and thermal stability up to +175 °C junction temperature.
The device operates with a 7.5 V working standoff voltage (VWM), 8.65 V minimum breakdown voltage (V(BR)) at 1 mA, and clamps to ≤13.5 V at 11.1 A peak impulse current (IPP), enabling robust secondary lightning protection in sensitive RF and data-line interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 10 µA |
| V(BR) min | 8.65 V at 1 mA - Ensures reliable avalanche conduction onset during transients |
| VC @ IPP | 13.5 V at 11.1 A - Clamping voltage limits downstream IC stress during 10/1000 µs surges |
| PPP | 150 W at 25 °C - Sustains high-energy transients without thermal runaway |
| CT | 4 pF - Enables use in >1 GHz signal paths without impedance disruption |
| TJ range | –55 to +175 °C - Supports operation in extended-temperature avionics and space-grade systems |
| RθJA | 150 °C/W - Requires minimal PCB copper area for thermal management in through-hole mounting |
Pinout & Package
MQ1N8150US/TR uses an axial-leaded "A" package (hard-glass hermetic case with tungsten slugs), RoHS-compliant matte tin plating over copper leads, cathode band marking, and weighs ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during positive surge | Connected to protected line; conducts when voltage exceeds VWM |
| Cathode | Reference node tied to system ground or return | Marked by band; defines unidirectional polarity and clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in harsh environments |
| Category 1 metallurgical bond | Meets MIL-STD-19500/208 requirements for high-reliability semiconductor interconnects |
| Triple-layer passivation | Prevents surface leakage and enhances humidity resistance per MIL-STD-750 Method 1071 |
| Low 4 pF capacitance | Preserves signal integrity in high-speed serial links (e.g., RS-485, CAN FD, MIL-STD-1553) |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±8 kV contact / ±15 kV air ESD, 4 kV EFT, and 2 kV lightning surge (line-to-ground) |
Applications
| Avionics Data Bus Protection | Military Radio Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines against induced lightning transients and ESD during aircraft maintenance. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between bus line and chassis ground to limit voltage excursions below receiver input damage threshold. Use Value: 4 pF capacitance avoids signal rise-time degradation; 13.5 V clamping ensures receiver ICs (e.g., HI-8442) remain within absolute maximum ratings. | Use Scenario: Shielding HF/VHF transceiver antenna ports from static discharge and nearby EMP events in manpack radios. IC Role / Device Role / Timing Role: First-stage transient suppressor on RF input path, upstream of LNA and bandpass filters. Use Value: Hermetic glass package withstands thermal cycling in field-deployed units; 150 W PPP handles multi-kA induced surges without parametric shift. |
| Satellite Command Link Interface | Ground-Based Radar Control System |
Use Scenario: Safeguarding command telemetry receivers in LEO satellites against single-event burnout from space radiation-induced transients. IC Role / Device Role / Timing Role: Radiation-hardened TVS on RS-422 differential pair inputs, leveraging inherent TID tolerance per MicroNote 050. Use Value: Category 1 metallurgical bond and hard-glass construction ensure no performance degradation after 100 krad(Si) total ionizing dose exposure. | Use Scenario: Protecting analog sensor inputs (e.g., temperature, pressure) in radar cooling subsystems exposed to switching surges from high-current motor drives. IC Role / Device Role / Timing Role: Low-leakage (≤10 µA at 7.5 V) TVS across signal and ground to prevent false triggering of ADC reference rails. Use Value: 1 µA standby current at VWM minimizes DC loading on precision instrumentation amplifiers and maintains measurement accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ7.0A | Surface-mount DO-214AB package; 100 W PPP; 100 pF capacitance | Higher capacitance limits use to sub-100 MHz applications; unsuitable for RF front-ends | Select only if board space constraints prohibit axial-leaded devices and RF bandwidth is not critical |
| 1N6375 | Hermetic glass axial package; 150 W PPP; 15 pF capacitance; lower reliability qualification level | Lacks Category 1 bond and triple-layer passivation; not rated for space or flight-critical use | Acceptable for industrial control where radiation hardness and 175 °C operation are unnecessary |
Compared with SMCJ7.0A and 1N6375, MQ1N8150US/TR uniquely combines 4 pF capacitance, Category 1 bonding, and hermetic hard-glass construction-enabling deployment in RF-sensitive, high-reliability domains where signal fidelity and long-term parameter stability are non-negotiable.
Availability
MQ1N8150US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, military radio front-end shielding, satellite command link interface, and ground-based radar control system applications requiring stable component supply and full traceability.
Supply support for MQ1N8150US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components with legacy roots in defense and space electronics.
The 1N8149–1N8182 series was developed specifically for mission-critical transient suppression in extended-temperature, high-frequency signal paths where conventional TVS diodes introduce unacceptable capacitive loading or reliability risk.
FAQ
What is the clamping voltage of MQ1N8150US/TR at its rated peak pulse current?
The MQ1N8150US/TR clamps to a maximum of 13.5 V when subjected to its rated peak impulse current (IPP) of 11.1 A under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and ensures protected circuits remain below damage thresholds for common interface ICs. The MQ1N8150US/TR maintains this clamping performance across its full operating temperature range due to its hard-glass hermetic construction and stable avalanche characteristics.
Is MQ1N8150US/TR suitable for bidirectional transient protection?
No, MQ1N8150US/TR is strictly unidirectional. Bidirectional protection requires two MQ1N8150US/TR devices mounted in anti-parallel configuration, which doubles the effective capacitance to 8 pF. This approach is documented in Figure 5 of the official Microsemi datasheet and preserves low-capacitance benefits while enabling symmetrical clamping on AC-coupled or differential lines. The MQ1N8150US/TR itself does not support reverse conduction.
Does MQ1N8150US/TR meet RoHS requirements?
Yes, MQ1N8150US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature per Microsemi's part numbering convention. Its axial leads feature matte tin plating over copper, and all materials comply with Directive 2011/65/EU Annex II substance restrictions. Full RoHS documentation and test reports are available upon request for MQ1N8150US/TR through Aetrix Electronics' compliance portal.
What is the maximum steady-state power dissipation for MQ1N8150US/TR?
The MQ1N8150US/TR has a maximum steady-state (average) power rating of 1.0 W at 25 °C ambient temperature. This value assumes adequate PCB thermal management to maintain junction temperature below 175 °C. Derating is required above 25 °C, following the curve in Figure 3 of the datasheet; at 100 °C ambient, allowable average power drops to approximately 0.5 W. The MQ1N8150US/TR is intended for transient suppression-not continuous power handling.
How does the internal rectifier diode affect the electrical behavior of MQ1N8150US/TR?
The MQ1N8150US/TR integrates a series-connected rectifier diode oriented opposite the TVS junction to block reverse leakage and reduce total capacitance to 4 pF. This architecture enables unidirectional operation while minimizing parasitic capacitance-unlike standard TVS diodes that rely solely on junction capacitance. The rectifier contributes no additional forward voltage drop in normal operation but ensures the device remains fully blocking below VWM. This design is intrinsic to the MQ1N8150US/TR and cannot be replicated using discrete components without compromising reliability.
MQ1N8150US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.5V
- Current - Peak Pulse (10/1000µs):
- 11.1A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8150US/TR FAQ
1.How can I place an order for MQ1N8150US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8150US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8150US/TR reliable?
The price and inventory of MQ1N8150US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8150US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8150US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8150US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8150US/TR?
MQ1N8150US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8150US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8150US/TR?
For technical support, including MQ1N8150US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8150US/TR requirements.
6.How does Aetrix verify that MQ1N8150US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8150US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8150US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8150US/TR?
All MQ1N8150US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8150US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8150US/TR part is unused and in its original packaging.
Return procedure for MQ1N8150US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8150US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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