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Microchip Technology MQ1N8152US/TR
- Part No.:
- MQ1N8152US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8152US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,721
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Product details
Overview
MQ1N8152US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 9.0 V working standoff voltage (VWM) with 10.4 V minimum breakdown voltage (V(BR)). It is used in aerospace, defense, and telecom interfaces where ESD/EFT immunity and low signal distortion are critical.
For engineers reviewing the MQ1N8152US/TR datasheet, MQ1N8152US/TR pinout, MQ1N8152US/TR application, or MQ1N8152US/TR equivalent, key selection criteria include clamping voltage (15.6 V), surge current rating (9.62 A), low capacitance for RF integrity, Category 1 metallurgical bond reliability, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards. Its 150 W peak pulse power rating is specified at 25 °C with 0.01% duty factor, and thermal resistance is 150 °C/W junction-to-ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse standoff voltage before leakage exceeds 5 µA; sets upper limit for protected line DC bias. |
| V(BR) min | 10.4 V - Minimum breakdown voltage at 1 mA test current; defines onset of avalanche conduction under transient stress. |
| VC @ IPP | 15.6 V - Clamping voltage at 9.62 A peak impulse current; determines maximum voltage seen by downstream circuitry during surge. |
| CT | 4 pF - Total small-signal capacitance at 0 V; enables minimal signal attenuation in >100 MHz RF/data lines. |
| PPP | 150 W - Peak pulse power at 10/1000 µs waveform; quantifies energy-handling capability for lightning-level transients. |
| TJ range | –55 to +175 °C - Operating junction temperature range; supports deployment in extreme environments including avionics and downhole systems. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient on standard PCB; informs heatsinking requirements for sustained surge duty. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-biased clamping | Connected to protected signal line; conducts surge current toward ground when Vsignal exceeds VWM. |
| Cathode | Reference terminal for clamping threshold and polarity definition | Marked with band; tied to system ground or common reference; establishes unidirectional protection direction. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated series rectifier diode - preserves signal integrity in high-speed data and RF paths. |
| Category 1 metallurgical bond | Internal high-reliability bond certified per MIL-STD-780 - ensures long-term stability in mission-critical applications. |
| Hermetic glass seal | Voidless construction eliminates moisture ingress and parameter drift - guarantees performance over 20+ year lifetimes. |
| ESD/EFT compliance | Validated to IEC61000-4-2 Level 4 (±15 kV air/±8 kV contact) and IEC61000-4-4 (4 kV burst) - reduces external filtering needs. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for space-grade and nuclear instrumentation designs. |
Applications
| Avionics Data Bus Protection | Defense Radar Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced transients during lightning strike events. IC Role / Device Role / Timing Role: Unidirectional TVS placed across receiver inputs to clamp surges while preserving <10 ns rise-time signal fidelity. Use Value: 4 pF capacitance avoids RC filtering of 1 Mbps data edges; 15.6 V clamping prevents receiver latch-up under 10/1000 µs surges. | Use Scenario: Shielding L-band radar receiver LNAs from antenna-coupled EMP and switching transients in ground vehicle platforms. IC Role / Device Role / Timing Role: Standoff-mounted TVS on RF input path to absorb multi-kA pulses without degrading noise figure or gain flatness. Use Value: Hermetic glass package withstands thermal cycling in wide-temperature military environments; 150 W rating handles radar transmit/receive coupling spikes. |
| Telecom Line Card Interface | Satellite Command & Telemetry |
Use Scenario: Safeguarding RS-485/RS-422 transceivers on base station line cards exposed to AC mains coupling and field wiring faults. IC Role / Device Role / Timing Role: TVS placed between differential pair and transceiver IC to shunt common-mode surges before they reach silicon. Use Value: 9.0 V VWM aligns with ±5 V supply rails; low leakage (<0.5 µA) prevents bias shift in precision termination networks. | Use Scenario: Protecting S-band command receivers in LEO satellites from single-event transients and launch-induced ESD. IC Role / Device Role / Timing Role: Radiation-hardened TVS on telemetry downlink analog front-end to maintain bit error rate under ionizing dose exposure. Use Value: Inherent radiation tolerance eliminates need for shielding mass; 175 °C max junction temperature supports passive thermal design in vacuum. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ9.0A | Surface-mount DO-214AB package; 1000 W PPP; 12.6 V VC @ 32.4 A; 100 pF CT | Higher power but 25× higher capacitance - unsuitable for >10 MHz signals | Select only for cost-sensitive industrial PCBs where layout space is constrained and frequency <1 MHz. |
| 1N6105A | Axial-leaded, 150 W PPP, 9.0 V VWM, 15.4 V VC @ 9.7 A, 10 pF CT, non-hermetic epoxy package | Lacks Category 1 bond and hermetic seal - limited to commercial-grade reliability and <10-year lifetime | Acceptable for terrestrial telecom infrastructure with controlled humidity and shorter service life expectations. |
Compared with SMCJ9.0A and 1N6105A, MQ1N8152US/TR uniquely combines ultra-low 4 pF capacitance, hermetic reliability, and Category 1 bonding - making it the only option qualified for flight-critical RF interfaces where signal fidelity and 20+ year field life are mandatory.
Availability
MQ1N8152US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, defense radar front-end circuits, and satellite command & telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8152US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure ICs for aerospace, defense, and industrial markets.
The 1N8149–1N8182 series was developed to address transient protection gaps in high-frequency, mission-critical systems - delivering hermetic robustness, ultra-low capacitance, and MIL-qualified reliability in axial-leaded form factors.
FAQ
What is the clamping voltage of MQ1N8152US/TR at its rated surge current?
The MQ1N8152US/TR has a maximum clamping voltage (VC) of 15.6 V when subjected to its rated peak impulse current (IPP) of 9.62 A using the 10/1000 µs waveform. This value is measured at 25 °C and ensures downstream circuitry remains below safe operating thresholds during standardized surge events. The MQ1N8152US/TR maintains this clamping performance across its full –55 °C to +175 °C junction temperature range, with minor derating above 25 °C per the published derating curve.
Is MQ1N8152US/TR RoHS compliant?
Yes, MQ1N8152US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. Its axial leads feature matte tin plating over copper, fully satisfying EU Directive 2011/65/EU requirements. The hermetic glass package contains no lead-based solder or hazardous substances, and Microsemi certifies compliance per JEDEC J-STD-609A. MQ1N8152US/TR is suitable for export-controlled and environmentally regulated programs requiring full substance disclosure.
Can MQ1N8152US/TR be used for bidirectional protection?
No, MQ1N8152US/TR is strictly unidirectional. For bidirectional low-capacitance protection, two MQ1N8152US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains sub-20 V clamping in both polarities. Using a single MQ1N8152US/TR in reverse bias risks permanent damage due to lack of symmetrical avalanche structure.
What is the maximum steady-state power dissipation for MQ1N8152US/TR?
The MQ1N8152US/TR has a maximum steady-state (average) power dissipation of 1.0 W at 25 °C ambient temperature, as defined by its PM(AV) rating. This assumes adequate PCB thermal management to maintain junction temperature ≤175 °C. Derating is required above 25 °C ambient - for example, at 70 °C ambient, usable average power drops to approximately 0.65 W. The MQ1N8152US/TR is not intended for continuous power regulation; its design purpose is transient energy absorption.
Does MQ1N8152US/TR require special handling for ESD sensitivity?
No, MQ1N8152US/TR is nonsensitive to ESD per MIL-STD-750 Method 1020, meaning it withstands direct electrostatic discharge without degradation. Its hermetic construction and internal metallurgical bonds eliminate gate oxide vulnerability found in MOS-based protectors. Standard handling procedures apply - no ionized air workstations or wrist straps are mandated for MQ1N8152US/TR assembly. This immunity is intrinsic to the device's junction design and packaging, not an added process step.
MQ1N8152US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10.4V
- Voltage - Clamping (Max) @ Ipp:
- 15.6V
- Current - Peak Pulse (10/1000µs):
- 9.62A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8152US/TR FAQ
1.How can I place an order for MQ1N8152US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8152US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8152US/TR reliable?
The price and inventory of MQ1N8152US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8152US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8152US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8152US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8152US/TR?
MQ1N8152US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8152US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8152US/TR?
For technical support, including MQ1N8152US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8152US/TR requirements.
6.How does Aetrix verify that MQ1N8152US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8152US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8152US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8152US/TR?
All MQ1N8152US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8152US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8152US/TR part is unused and in its original packaging.
Return procedure for MQ1N8152US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8152US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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