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Microchip Technology MQ1N8153US/TR
- Part No.:
- MQ1N8153US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8153US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,790
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Product details
Overview
MQ1N8153US/TR from Microsemi is a voidless-hermetically-sealed unidirectional Transient Voltage Suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 10.0 V working standoff voltage (VWM) with 11.4 V minimum breakdown voltage (V(BR)). It is used in aerospace-grade data links and RF front-end interfaces where ESD immunity and low capacitive loading are critical.
For engineers reviewing the MQ1N8153US/TR datasheet, MQ1N8153US/TR pinout, MQ1N8153US/TR application, or MQ1N8153US/TR equivalent, key selection criteria include its 4 pF capacitance, Category 1 metallurgical bond reliability, hermetic glass package, IEC61000-4-2/4-4 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction with tungsten slugs enables operation from –55 °C to +175 °C and supports MIL-STD-750 Method 1020 ESD insensitivity.
The device operates with 1.0 W steady-state power dissipation at 25 °C ambient and exhibits 150 °C/W thermal resistance junction-to-ambient. Its clamping voltage is 16.9 V at 11.7 A peak impulse current (IPP), enabling robust secondary lightning protection per IEC61000-4-5 select levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10.0 V - Maximum continuous reverse standoff voltage before leakage exceeds 1 µA; sets upper limit for protected line DC bias. |
| V(BR) min | 11.4 V - Minimum breakdown voltage at 1 mA; ensures reliable conduction onset during transients. |
| VC @ IPP | 16.9 V at 11.7 A - Clamping voltage under 10/1000 µs surge; defines worst-case voltage seen by downstream circuitry. |
| Capacitance | 4 pF at 0 V - Enables use on >1 GHz RF lines and high-speed serial interfaces without signal integrity degradation. |
| PPP | 150 W at 10/1000 µs - Peak transient energy handling capacity; validated for IEC61000-4-5 Level 3/4 surge events. |
| TJ range | –55 °C to +175 °C - Supports operation in extended-temperature avionics, downhole, and military platforms. |
| RθJA | 150 °C/W - Thermal resistance dictates PCB copper area requirements for sustained 1.0 W average power dissipation. |
Pinout & Package
Package: Axial-leaded hermetically sealed hard-glass case with cathode band marking; body diameter 1.52–2.16 mm, lead length 20.32–33.02 mm, weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-bias clamping | Connected to protected signal line; conducts surge current to ground when Vsignal exceeds VWM. |
| Cathode | Reference terminal (marked with band) | Connected to system ground or common reference; establishes polarity for unidirectional clamping action. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture and particle migration, ensuring long-term parameter stability in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Internal tungsten-copper bond structure qualified for space-grade reliability and radiation hardness per MicroNote 050. |
| Triple-layer passivation | Enhances surface insulation and prevents leakage path formation under high humidity or contamination exposure. |
| Low 4 pF capacitance | Minimizes insertion loss and phase distortion on RF and high-speed digital lines up to 2.5 Gbps. |
| RoHS-compliant plating | Matte tin over copper leads meet EU RoHS Directive 2011/65/EU without compromising solderability or corrosion resistance. |
Applications
| Avionics Data Bus Protection | RF Front-End ESD Guarding |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines in flight control computers against induced surges and lightning-induced transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus line and chassis ground to shunt transients without disrupting DC bias or signal integrity. Use Value: 4 pF capacitance avoids skew or attenuation on 1 MHz–2 MHz differential signals; 150 W rating handles DO-160 Section 22 Level 4 induced surge. | Use Scenario: Shielding LNA input stages in satellite communication transceivers from ESD events during handling or antenna coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at SMA connector feedthrough to suppress sub-nanosecond ESD pulses before reaching GaAs FETs. Use Value: 16.9 V clamping voltage preserves LNA gain linearity; hermetic seal prevents parameter drift in thermal-vacuum cycling. |
| Military Radio Antenna Interface | Downhole Telemetry Signal Conditioning |
Use Scenario: Safeguarding HF/VHF antenna ports in manpack radios exposed to electrostatic discharge and nearby EMP events. IC Role / Device Role / Timing Role: Series-mounted TVS on coaxial center conductor to clamp common-mode transients while preserving impedance match. Use Value: 11.4 V breakdown ensures conduction only during threat-level events; axial leads allow direct chassis grounding via shortest possible path. | Use Scenario: Protecting analog sensor outputs (e.g., pressure, temperature) in oil/gas well logging tools operating at 175 °C ambient. IC Role / Device Role / Timing Role: Standoff-rated TVS on 4–20 mA loop lines to prevent transient-induced latch-up in precision DACs and isolators. Use Value: –55 °C to +175 °C junction rating matches tool operational envelope; 1.0 W steady-state power supports continuous loop current derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ10A | Surface-mount SMC package; 100 W PPP; 17.0 V VC @ 8.3 A; 100 pF capacitance | Higher capacitance limits use to <100 MHz lines; lacks hermetic seal and Category 1 bond | Select when board space is constrained and extended temperature or radiation tolerance is not required. |
| 1N8153US | Same die and specs but non-RoHS tin/lead plating; identical package and electrical performance | No functional difference; differs only in lead finish compliance status | Select when RoHS exemption applies or legacy procurement mandates SnPb termination. |
Compared with SMCJ10A and 1N8153US, MQ1N8153US/TR uniquely combines 4 pF capacitance, hermetic reliability, and RoHS compliance-making it the only option qualified for high-frequency, high-reliability, and environmentally regulated deployments.
Availability
MQ1N8153US/TR is available at Aetrix Electronics and suitable for avionics data buses, RF front-end interfaces, military radio antenna ports, and downhole telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8153US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N8149–1N8182 series was developed specifically for mission-critical transient protection in hermetically sealed, radiation-tolerant packages-targeting applications where failure is not an option.
FAQ
What is the clamping voltage of MQ1N8153US/TR under a standard 10/1000 µs surge?
The MQ1N8153US/TR has a maximum clamping voltage (VC) of 16.9 V when subjected to its rated peak impulse current of 11.7 A under the 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during surge events. The MQ1N8153US/TR maintains this clamping performance across its full operating temperature range due to its hard-glass hermetic construction and stable metallurgical bond.
Does MQ1N8153US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MQ1N8153US/TR provides ESD and EFT protection compliant with IEC61000-4-2 (±15 kV air, ±8 kV contact) and IEC61000-4-4 (40 A/m², 5/50 ns), as confirmed in Microsemi's T4-LDS-xxxx datasheet. Its 4 pF capacitance and fast response time enable effective suppression of these standardized threats without degrading high-frequency signal fidelity. The MQ1N8153US/TR achieves this while maintaining its specified VWM and VC parameters under test conditions.
What is the meaning of "MQ" in MQ1N8153US/TR?
The "MQ" prefix in MQ1N8153US/TR denotes JAN-level reliability qualification per MIL-PRF-19500, indicating that the device meets enhanced screening, testing, and traceability requirements for military and aerospace applications. It reflects Microsemi's internal nomenclature for parts meeting JANTX-level reliability standards-including burn-in, temperature cycling, and hermeticity verification. The MQ1N8153US/TR is fully traceable to lot and wafer, consistent with this designation.
Can MQ1N8153US/TR be used in bidirectional configurations?
MQ1N8153US/TR is inherently unidirectional, but bidirectional protection can be achieved by connecting two units in anti-parallel, as documented in Figure 5 of the Microsemi datasheet. This configuration doubles the total capacitance to 8 pF while preserving clamping symmetry. The MQ1N8153US/TR itself does not support bidirectional operation alone; using it in anti-parallel requires careful layout to balance parasitic inductance and ensure matched clamping thresholds.
What is the thermal resistance and steady-state power rating of MQ1N8153US/TR?
The MQ1N8153US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W and a steady-state average power rating (PM(AV)) of 1.0 W at 25 °C ambient. This rating assumes adequate PCB copper area and thermal vias to maintain junction temperature below 175 °C. Derating is required above 25 °C ambient, following the curve in Figure 3 of the datasheet. The MQ1N8153US/TR sustains this power level continuously without parameter shift due to its voidless hermetic seal and tungsten slug construction.
MQ1N8153US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.9V
- Current - Peak Pulse (10/1000µs):
- 8.88A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8153US/TR FAQ
1.How can I place an order for MQ1N8153US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8153US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8153US/TR reliable?
The price and inventory of MQ1N8153US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8153US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8153US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8153US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8153US/TR?
MQ1N8153US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8153US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8153US/TR?
For technical support, including MQ1N8153US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8153US/TR requirements.
6.How does Aetrix verify that MQ1N8153US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8153US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8153US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8153US/TR?
All MQ1N8153US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8153US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8153US/TR part is unused and in its original packaging.
Return procedure for MQ1N8153US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8153US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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