Microchip Technology MQ1N8154US/TR
- Part No.:
- MQ1N8154US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8154US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,737
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Product details
Overview
MQ1N8154US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 11.0 V working standoff voltage (VWM), 18.2 V clamping voltage (VC) at 8.24 A peak impulse current (IPP), 4 pF capacitance, and 150 W peak pulse power rating for 10/1000 µs waveform. It employs a series-connected rectifier diode to achieve ultra-low capacitance and is designed for ESD/EFT protection in high-frequency telecom and data-line interfaces.
For engineers reviewing the MQ1N8154US/TR datasheet, MQ1N8154US/TR pinout, MQ1N8154US/TR application, or MQ1N8154US/TR equivalent, key selection criteria include its 4 pF low capacitance, Category 1 metallurgical bond reliability, RoHS-compliant MELF "A" package, and IEC61000-4-2/4-4 compliance - critical for high-reliability signal-line surge protection where circuit loading and failure tolerance are paramount.
Technical Context
This TVS uses a unique internal architecture: a unidirectional TVS die connected in series with an oppositely oriented rectifier diode, enabling 4 pF total capacitance while maintaining 150 W surge capability. Its hard-glass hermetic seal and tungsten slug construction ensure robust thermal performance and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature, with 0.081 %/°C breakdown voltage temperature coefficient and 0.5 µA standby current at 11.0 V VWM. It delivers 18.2 V clamping under 8.24 A IPP (10/1000 µs), supporting secondary lightning protection per select IEC61000-4-5 levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11.0 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA. |
| VC @ IPP | 18.2 V at 8.24 A - Clamped voltage during 10/1000 µs surge, limiting downstream IC stress. |
| CT | 4 pF - Ultra-low capacitance preserves signal integrity in >100 MHz data lines (e.g., RS-485, USB 2.0). |
| PPP | 150 W - Peak pulse power handling at 25 °C, derated above 25 °C per Figure 3. |
| TJ Range | –55 to +175 °C - Extended thermal range supports aerospace, downhole, and industrial control environments. |
| RθJA | 150 °C/W - Thermal resistance informs PCB copper area requirements for sustained 1.0 W average power dissipation. |
| αV(BR) | 0.081 %/°C - Predictable breakdown drift enables stable overvoltage protection across temperature. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass MELF "A" package (diameter 1.52–2.16 mm, length 2.69–4.45 mm), axial-leaded, cathode band marked, RoHS-compliant matte tin plating over copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input side of series rectifier diode | Connected to protected line; current flows anode-to-cathode during clamping. |
| Cathode | Output side of TVS diode (cathode band marked) | Connected to ground or common reference; defines unidirectional conduction path. |
Key Features
| Feature | Design Value |
|---|---|
| Low-capacitance architecture | 4 pF achieved via series rectifier + TVS topology - enables use on 100+ MHz signal paths without bandwidth degradation. |
| Category 1 metallurgical bond | Internal high-reliability bond qualified for mission-critical applications including aerospace and defense systems. |
| Hermetic glass seal | Voidless hard-glass construction prevents moisture ingress and ensures long-term parameter stability under thermal cycling. |
| IEC61000-4-2/4-4 compliance | Validated ESD (±15 kV air, ±8 kV contact) and EFT (40 A, 5/50 ns) immunity - reduces need for external filtering. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050 - suitable for space-qualified and nuclear instrumentation designs. |
Applications
| Telecom Line Interface Protection | Industrial RS-485 Transceivers |
|---|---|
Use Scenario: Protecting T1/E1 line drivers and receivers from induced surges and lightning-induced transients on outdoor copper pairs. IC Role / Device Role: Primary unidirectional surge clamp on differential signal pair, placed before receiver input. Use Value: 4 pF capacitance avoids signal distortion at 2.048 MHz framing rates; 18.2 V VC limits receiver input stress below absolute maximum ratings. | Use Scenario: Safeguarding isolated RS-485 transceivers in factory automation PLC backplanes exposed to motor-switching noise. IC Role / Device Role: Point-of-entry TVS on A/B bus lines, referenced to isolated ground plane. Use Value: 150 W PPP rating absorbs repetitive 10/1000 µs transients up to 8.24 A; hermetic seal prevents corrosion in humid environments. |
| Medical Imaging Data Links | Aerospace Avionics Serial Buses |
Use Scenario: Shielding high-speed digital video links (e.g., Camera Link, CoaXPress) in MRI and CT scanner subsystems from ESD events during maintenance. IC Role / Device Role: Low-capacitance ESD suppressor on coaxial or twisted-pair video outputs. Use Value: 4 pF loading preserves rise time <1 ns; RoHS-compliant matte tin plating meets medical device material restrictions. | Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data buses in flight control computers from lightning-induced surges. IC Role / Device Role: Unidirectional clamping element on bus receivers, leveraging Category 1 bond for DO-160 Section 22 compliance. Use Value: –55 to +175 °C operation supports extended temperature qualification; radiation hardness eliminates single-event latchup risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ11A | Surface-mount SMC package; 12.2 V VWM, 19.9 V VC @ 7.6 A; 170 W PPP; 100 pF capacitance. | Higher capacitance limits use to <10 MHz signals; unsuitable for high-speed data lines. | Select when board space is constrained and signal frequency <5 MHz; avoid for USB, RS-485, or video interfaces. |
| 1N6105A | Axial-leaded DO-41; 11.1 V VWM, 18.2 V VC @ 8.2 A; 150 W PPP; 100 pF capacitance; no Category 1 bond or hermetic seal. | Lacks radiation hardness and long-term reliability validation for aerospace/medical use. | Acceptable for commercial-grade industrial controls where cost is primary; not recommended for safety-critical or extended-life deployments. |
Compared with SMCJ11A and 1N6105A, MQ1N8154US/TR uniquely delivers 4 pF capacitance in a hermetically sealed, Category 1-bonded MELF package - making it the only option among the three qualified for high-frequency, high-reliability signal-line protection in aerospace, medical imaging, and telecom infrastructure.
Availability
MQ1N8154US/TR is available at Aetrix Electronics and suitable for telecom line interface protection, industrial RS-485 transceivers, and medical imaging data links requiring stable component supply, long-lifecycle assurance, and traceable sourcing for regulated environments.
Supply support for MQ1N8154US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and RF solutions for aerospace, defense, communications, and industrial markets.
The MQ1N81xxUS/TR series belongs to Microsemi's high-reliability transient voltage suppressor product line, engineered specifically for mission-critical signal-line protection where low capacitance, hermetic sealing, and radiation tolerance are mandatory design requirements.
FAQ
What is the clamping voltage of MQ1N8154US/TR at its rated peak impulse current?
The MQ1N8154US/TR has a maximum clamping voltage (VC) of 18.2 V when subjected to its rated peak impulse current (IPP) of 8.24 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and ensures downstream circuitry remains within safe operating limits during surge events. The MQ1N8154US/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient of breakdown voltage.
Is MQ1N8154US/TR suitable for bidirectional transient protection?
No - MQ1N8154US/TR is a unidirectional TVS. For bidirectional protection, two MQ1N8154US/TR devices must be connected in anti-parallel, as shown in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping performance per polarity. The MQ1N8154US/TR itself does not support symmetrical clamping in both directions.
Does MQ1N8154US/TR meet IEC61000-4-5 for lightning surge immunity?
Yes - MQ1N8154US/TR provides secondary lightning protection per select levels of IEC61000-4-5, as confirmed in the Applications/Benefits section of the datasheet. Its 150 W peak pulse power rating and 18.2 V clamping voltage enable effective energy diversion for combination wave (1.2/50 µs voltage, 8/20 µs current) surges typical of indirect lightning coupling. System-level compliance requires proper PCB layout and grounding per IEC61000-4-5 test setup.
What is the meaning of "MQ" in MQ1N8154US/TR?
The "MQ" prefix in MQ1N8154US/TR denotes JAN-level reliability qualification per U.S. military specifications, indicating that the MQ1N8154US/TR is manufactured and tested to meet stringent screening, lot traceability, and quality assurance requirements for high-reliability applications. It corresponds to the "JAN" reference level in Microsemi's nomenclature system, distinguishing it from commercial-grade variants.
Can MQ1N8154US/TR be used in RoHS-compliant designs?
Yes - MQ1N8154US/TR is RoHS compliant, as indicated by the "e3" suffix in its full part number and explicitly stated in the Features section of the datasheet. Its matte tin plating over copper leads and lead-free glass package meet EU Directive 2011/65/EU requirements. No exemptions are required, and the MQ1N8154US/TR is fully compatible with lead-free reflow soldering profiles up to 260 °C for 10 seconds.
MQ1N8154US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.4V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 8.24A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8154US/TR FAQ
1.How can I place an order for MQ1N8154US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8154US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8154US/TR reliable?
The price and inventory of MQ1N8154US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8154US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8154US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8154US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8154US/TR?
MQ1N8154US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8154US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8154US/TR?
For technical support, including MQ1N8154US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8154US/TR requirements.
6.How does Aetrix verify that MQ1N8154US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8154US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8154US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8154US/TR?
All MQ1N8154US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8154US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8154US/TR part is unused and in its original packaging.
Return procedure for MQ1N8154US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8154US/TR Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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