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Microchip Technology MQ1N8155US/TR
- Part No.:
- MQ1N8155US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8155US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,608
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Product details
Overview
MQ1N8155US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 12.0 V working standoff voltage (VWM), 20.2 V peak clamping voltage (VC) at 11.7 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for 10/1000 µs transients. It employs a series-connected rectifier diode to achieve ultra-low capacitance and is designed for ESD/EFT protection in high-frequency telecom and data-line interfaces.
For engineers reviewing the MQ1N8155US/TR datasheet, MQ1N8155US/TR pinout, MQ1N8155US/TR application, or MQ1N8155US/TR equivalent, key selection criteria include its 4 pF low-capacitance architecture, Category 1 metallurgical bond reliability, hermetic glass package, and IEC61000-4-2/4-4 compliance - critical for high-reliability signal-line protection where failure is unacceptable.
Technical Context
This TVS uses a unique internal configuration: a TVS junction in series with an oppositely oriented rectifier diode, enabling bidirectional surge suppression capability only when two units are mounted anti-parallel while maintaining unidirectional behavior per device. Its voidless hard-glass construction ensures hermetic sealing and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature, with thermal resistance RθJA = 150 °C/W, and delivers stable clamping performance under repetitive 0.01% duty-cycle impulses. Its 0.5 µA maximum standby current at 12.0 V VWM supports low-power system monitoring without loading sensitive nodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets safe operating margin for 12 V signal rails. |
| VC @ IPP | 20.2 V at 11.7 A - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to ≤20.2 V under worst-case 150 W transient. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use on >1 GHz RF/data lines without signal integrity degradation. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports robust secondary lightning protection per IEC61000-4-5 Level 3. |
| TJ Range | –55 to +175 °C - Extended temperature operation suitable for aerospace, downhole, and military embedded systems. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for thermal management in sealed enclosures. |
Pinout & Package
MQ1N8155US/TR is housed in an axial-leaded, voidless hermetically sealed hard-glass package with tungsten slugs and cathode band polarity marking. Terminals are tin/lead or RoHS-compliant matte tin over copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during positive surges | Connected to protected line; conducts surge energy toward cathode during overvoltage events. |
| Cathode | Transient current exit point with clamping reference | Connected to ground or return path; defines clamping threshold relative to anode under reverse bias. |
Key Features
| Feature | Design Value |
|---|---|
| Series-diode low-C architecture | Enables 4 pF capacitance - lowest among 150 W TVS devices - preserving signal integrity on high-speed serial links. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space-grade and mission-critical systems. |
| Hermetic glass seal | Eliminates moisture ingress and void formation, ensuring long-term parameter stability in humid or corrosive environments. |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air ESD and 4 kV EFT bursts - meets industrial and telecom immunity requirements. |
Applications
| Telecom Line Interface Protection | Avionics Data Bus Protection |
|---|---|
Use Scenario: Protecting RS-485/RS-422 differential pairs in outdoor base station backhaul equipment exposed to induced lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed between each signal line and chassis ground to clamp transients before they reach transceiver ICs. Use Value: 4 pF capacitance prevents signal distortion at 10 Mbps+ data rates; 20.2 V clamping protects 3.3 V/5 V transceivers from damage. | Use Scenario: Safeguarding ARINC 429 receive inputs in flight control computers subjected to aircraft static discharge and EMP. IC Role / Device Role / Timing Role: Standoff-rated TVS on input pins to absorb fast-rising ESD events while maintaining <1 nA leakage at 12 V supply rails. Use Value: –55 °C to +175 °C operation and Category 1 bonding ensure reliability across full aircraft envelope without derating. |
| Military Radio Front-End Protection | Medical Imaging Signal Chain Protection |
Use Scenario: Shielding HF/VHF receiver antenna ports in manpack radios from nearby RF ignition and electrostatic discharge. IC Role / Device Role / Timing Role: Low-capacitance TVS shunting antenna feedline to ground to suppress sub-100 ns ESD pulses without detuning matching networks. Use Value: 4 pF capacitance avoids resonance shift in 50 Ω RF paths; hermetic seal prevents parameter drift in field-deployed units. | Use Scenario: Protecting analog front-end ADC inputs in MRI gradient coil monitoring circuits from switching-induced transients. IC Role / Device Role / Timing Role: Precision-clamping TVS on sensor signal lines to limit overvoltage to ≤20.2 V while adding negligible noise or offset error. Use Value: 0.5 µA max ID at 12 V VWM prevents DC loading of high-impedance sensor outputs; radiation-hard design resists MRI fringe-field effects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12A | Surface-mount DO-214AA package; 13.3 V VWM; 19.9 V VC @ 12.1 A; 150 W PPP; 100 pF capacitance. | Higher capacitance limits use to ≤100 MHz signals; unsuitable for RF/data-line protection requiring <5 pF. | Select SMBJ12A only for cost-sensitive, non-RF board-level protection where layout space is constrained. |
| 1N6107A | Axial-leaded DO-41; 12 V VWM; 20.1 V VC @ 11.7 A; 150 W PPP; 100 pF capacitance; no hermetic seal or Category 1 bond. | Lacks radiation hardness and long-term hermetic reliability; not qualified for aerospace or extended-life deployments. | Choose 1N6107A for commercial-grade industrial controls where environmental stress is moderate and lifetime >10 years is not required. |
Compared with SMBJ12A and 1N6107A, MQ1N8155US/TR uniquely delivers 4 pF capacitance in an axial-leaded, hermetically sealed, Category 1-bonded package - making it the only option for high-frequency, high-reliability transient suppression where signal fidelity and long-term parameter stability are mandatory.
Availability
MQ1N8155US/TR is available at Aetrix Electronics and suitable for telecom line interface protection, avionics data bus protection, and military radio front-end protection requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8155US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The MQ1N81xxUS/TR series belongs to Microsemi's high-reliability transient voltage suppressor family, engineered specifically for mission-critical signal-line protection where hermeticity, low capacitance, and extreme environmental resilience are non-negotiable.
FAQ
What is the clamping voltage of MQ1N8155US/TR under a 10/1000 µs surge?
The MQ1N8155US/TR has a maximum peak clamping voltage (VC) of 20.2 V when subjected to a 10/1000 µs transient waveform at its rated peak impulse current of 11.7 A. This value is measured at 25 °C and guarantees that protected circuitry will not experience voltages exceeding 20.2 V during such standardized surge events. The MQ1N8155US/TR maintains this clamping performance across its full operating temperature range.
Is MQ1N8155US/TR RoHS compliant?
Yes, MQ1N8155US/TR is RoHS compliant, indicated by the "e3" suffix in its full part number nomenclature. Its terminals feature matte tin plating over copper, and all materials meet EU Directive 2011/65/EU requirements. The device also complies with Microsemi's green manufacturing standards and carries no exemptions for lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE.
Does MQ1N8155US/TR support bidirectional transient suppression?
No, MQ1N8155US/TR is a unidirectional TVS. Bidirectional protection requires two MQ1N8155US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping for both polarities - a necessary trade-off for high-frequency bidirectional signal lines.
What is the maximum steady-state power dissipation of MQ1N8155US/TR at 25 °C ambient?
The MQ1N8155US/TR has a maximum steady-state (average) power dissipation of 1.0 W at TA = 25 °C, as specified in the Maximum Ratings table. This rating assumes adequate PCB thermal management - e.g., minimum 1 sq-in copper pour - to maintain junction temperature within the –55 °C to +175 °C limit. Derating is required above 25 °C per the published derating curve.
How does the series-diode architecture of MQ1N8155US/TR reduce capacitance?
The MQ1N8155US/TR integrates a rectifier diode in series and opposite polarity to the TVS junction, effectively blocking the parasitic junction capacitance of the TVS element during normal operation. This architecture reduces total terminal capacitance to 4 pF - significantly lower than conventional TVS diodes - without compromising surge-handling capability. The MQ1N8155US/TR achieves this while retaining full 150 W peak pulse power rating.
MQ1N8155US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.8V
- Voltage - Clamping (Max) @ Ipp:
- 20.2V
- Current - Peak Pulse (10/1000µs):
- 7.42A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8155US/TR FAQ
1.How can I place an order for MQ1N8155US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8155US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8155US/TR reliable?
The price and inventory of MQ1N8155US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8155US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8155US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8155US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8155US/TR?
MQ1N8155US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8155US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8155US/TR?
For technical support, including MQ1N8155US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8155US/TR requirements.
6.How does Aetrix verify that MQ1N8155US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8155US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8155US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8155US/TR?
All MQ1N8155US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8155US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8155US/TR part is unused and in its original packaging.
Return procedure for MQ1N8155US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8155US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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