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Microchip Technology MQ1N8156US/TR
- Part No.:
- MQ1N8156US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8156US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,132
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Product details
Overview
MQ1N8156US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 13.0 V working standoff voltage (VWM) with 15.2 V minimum breakdown voltage (V(BR)) at 1 mA. It is used in aerospace, defense, and telecom infrastructure to protect RF front-ends and data links from ESD and lightning-induced transients.
For engineers reviewing the MQ1N8156US/TR datasheet, MQ1N8156US/TR pinout, MQ1N8156US/TR application, or MQ1N8156US/TR equivalent, key selection criteria include low-capacitance transient clamping (4 pF), hermetic glass package robustness, Category 1 metallurgical bonding, IEC61000-4-2/4-4/4-5 compliance, and axial-leaded through-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction eliminates internal voids and supports operation from –55 °C to +175 °C junction temperature.
The device achieves 150 W peak pulse power at 25 °C with a 10/1000 µs waveform, clamps to ≤22.3 V at 11.1 A peak impulse current (IPP), and exhibits <0.5 µA standby leakage at rated VWM. Its triple-layer passivation and Category 1 internal metallurgical bond ensure radiation hardness and long-term reliability in mission-critical systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13.0 V - Maximum continuous reverse-biased operating voltage before conduction begins. |
| V(BR) min | 15.2 V at 1 mA - Confirmed avalanche onset voltage, ensuring predictable clamping threshold. |
| VC @ IPP | ≤22.3 V at 11.1 A - Clamping voltage during 10/1000 µs surge, limiting downstream voltage stress. |
| CT | 4 pF - Ultra-low capacitance preserves signal integrity in >1 GHz RF and high-speed data lines. |
| PPP | 150 W - Peak pulse power rating defines maximum transient energy absorption capability. |
| TJ range | –55 °C to +175 °C - Extended thermal range enables deployment in avionics and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance informs PCB copper area requirements for sustained power dissipation. |
Pinout & Package
MQ1N8156US/TR uses an axial-leaded, hermetically sealed hard-glass package with tungsten slugs and cathode band polarity marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight is ~340 mg; standard tape-and-reel per EIA-296 is available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected circuit ground reference. | Provides low-impedance path to ground during transient events when cathode is at higher potential. |
| Cathode | Negative terminal; marked by colored band; connects to protected signal line. | Accepts transient voltage above VWM and initiates avalanche conduction to clamp line voltage. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in harsh environments. |
| Category 1 metallurgical bond | Meets MIL-STD-883 qualification for high-reliability applications including space-grade systems. |
| 4 pF total capacitance | Enables use on 5G RF front-ends and >1 Gbps serial links without signal distortion or bandwidth loss. |
| IEC61000-4-2/4-4/4-5 compliance | Validated protection against ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV lightning surges. |
| Triple-layer passivation | Prevents surface leakage and parametric drift under high humidity, salt fog, or radiation exposure. |
Applications
| Avionics Data Bus Protection | Ground-Based Radar Receiver Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines from induced lightning transients and HIRF coupling. IC Role / Device Role / Timing Role: Unidirectional TVS placed across each signal line to ground, clamping transients before they reach bus transceivers. Use Value: 4 pF capacitance avoids signal rise-time degradation; 150 W rating absorbs multi-kA induced surges without failure. |
Use Scenario: Shielding L-band and S-band radar receiver LNAs from antenna-coupled lightning surges and EMP. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at RF connector interface to minimize stub inductance and preserve VSWR. Use Value: Hermetic glass package withstands thermal cycling in outdoor radomes; 175 °C max TJ supports operation near high-power amplifiers. |
| Secure Satellite Communication Modems | Military Tactical Radio IF Stages |
Use Scenario: Safeguarding QPSK/QAM demodulator inputs in LEO satellite modems exposed to single-event transients and launch vibration. IC Role / Device Role / Timing Role: Standoff-rated TVS on baseband analog inputs, leveraging 13.0 V VWM to match modem supply rails. Use Value: Radiation-hardened construction per MicroNote 050 ensures no parametric shift after 100 krad(Si); RoHS e3 option supports export compliance. |
Use Scenario: Protecting intermediate frequency (IF) filters and mixers in handheld radios subjected to ESD during field handling and battery swaps. IC Role / Device Role / Timing Role: Axial-leaded TVS soldered inline on 70 MHz IF traces, using lead geometry to minimize parasitic inductance. Use Value: 0.5 µA ID at VWM prevents DC loading of high-impedance IF nodes; 22.3 V VC limits mixer diode damage during 8 kV ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ13A | Surface-mount DO-214AB package; 13 V VWM; 400 W PPP; 100 pF capacitance. | Higher capacitance limits use to sub-100 MHz circuits; SMT footprint reduces board space but lacks hermetic seal. | Select when cost, volume assembly, or PCB real estate outweighs need for ultra-low C and radiation tolerance. |
| 1N6105A | Axial-leaded, glass-passivated; 13 V VWM; 150 W PPP; 100 pF; non-hermetic; commercial temp range only. | Lacks Category 1 bond, voidless seal, and extended temperature rating; not qualified for aerospace or defense. | Choose for industrial control or test equipment where MIL-spec reliability is unnecessary and budget is constrained. |
Compared with SMCJ13A and 1N6105A, MQ1N8156US/TR uniquely combines 4 pF capacitance, hermetic reliability, and –55 °C to +175 °C operation-making it irreplaceable in RF-intensive, safety-critical, or extended-life deployments where signal fidelity and long-term parametric stability are mandatory.
Availability
MQ1N8156US/TR is available at Aetrix Electronics and suitable for avionics data buses, ground-based radar receivers, secure satellite modems, and military tactical radio IF stages requiring stable component supply, full traceability, and long-lifecycle support.
Supply support for MQ1N8156US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.
The 1N8149–1N8182 series was engineered specifically for mission-critical RF and digital signal protection in defense, space, and telecom infrastructure-prioritizing ultra-low capacitance, hermetic robustness, and MIL-qualified reliability over cost or consumer-grade performance.
FAQ
What is the clamping voltage of MQ1N8156US/TR at its rated peak impulse current?
The MQ1N8156US/TR clamps to a maximum of 22.3 V when subjected to its rated peak impulse current of 11.1 A under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on the protected circuit during transient events. The MQ1N8156US/TR maintains this clamping performance across its full operational temperature range due to its stable avalanche characteristics and hermetic construction.
Is MQ1N8156US/TR RoHS compliant?
Yes, MQ1N8156US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature. Its leads feature matte tin plating over copper, satisfying EU Directive 2011/65/EU requirements. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Full RoHS documentation and material declarations are available upon request for MQ1N8156US/TR.
Does MQ1N8156US/TR support bidirectional transient protection?
No, MQ1N8156US/TR is strictly unidirectional. Bidirectional protection requires two MQ1N8156US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping voltage and power rating per path. For native bidirectional low-capacitance TVS, alternate series such as the 1N82xx family must be evaluated-not MQ1N8156US/TR.
What is the maximum steady-state power dissipation for MQ1N8156US/TR?
The MQ1N8156US/TR has a maximum steady-state (average) power rating of 1.0 W at 25 °C ambient temperature. This value assumes adequate PCB thermal management to maintain junction temperature below 175 °C. Derating is required above 25 °C per the published derating curve (Figure 3), reaching zero allowable power at 175 °C ambient. The MQ1N8156US/TR is intended for transient suppression-not continuous power dissipation.
Can MQ1N8156US/TR be used in place of MQ1N8156US without the "/TR" suffix?
Yes-MQ1N8156US/TR is the tape-and-reel packaging variant of MQ1N8156US, fully identical in electrical, thermal, and mechanical specifications. The "/TR" denotes EIA-296 standard tape-and-reel packaging for automated assembly; the bare die, junction structure, glass body, and marking remain unchanged. Both share identical VWM, V(BR), VC, capacitance, and reliability qualifications-MQ1N8156US/TR is functionally and electrically interchangeable with MQ1N8156US.
MQ1N8156US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22.3V
- Current - Peak Pulse (10/1000µs):
- 6.73A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8156US/TR FAQ
1.How can I place an order for MQ1N8156US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8156US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8156US/TR reliable?
The price and inventory of MQ1N8156US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8156US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8156US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8156US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8156US/TR?
MQ1N8156US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8156US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8156US/TR?
For technical support, including MQ1N8156US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8156US/TR requirements.
6.How does Aetrix verify that MQ1N8156US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8156US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8156US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8156US/TR?
All MQ1N8156US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8156US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8156US/TR part is unused and in its original packaging.
Return procedure for MQ1N8156US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8156US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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