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Microchip Technology MQ1N8158US/TR
- Part No.:
- MQ1N8158US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8158US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
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Product details
Overview
MQ1N8158US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 17 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MQ1N8158US/TR datasheet, MQ1N8158US/TR pinout, MQ1N8158US/TR application, or MQ1N8158US/TR equivalent, this device delivers verified ESD/EFT protection per IEC61000-4-2/4-4, secondary lightning protection per IEC61000-4-5, and radiation-hardened performance per MicroNote 050 - critical for mission-critical signal line protection in avionics and space-grade systems.
Technical Context
This TVS employs a unique dual-element structure: a low-capacitance TVS junction paired with a series-connected, oppositely oriented rectifier diode to achieve 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package eliminates voids and supports operation from –55 °C to +175 °C.
The device operates as a voltage-clamped surge protector with 19.0 V minimum breakdown voltage (V(BR)) at 1 mA, 27.7 V maximum clamping voltage (VC) at 11.7 A peak impulse current (IPP), and <0.5 µA standby current at 17 V standoff. It is rated for 150 W peak pulse power under standard 10/1000 µs waveform conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 17 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; defines safe operating threshold for protected signal lines. |
| V(BR) min | 19.0 V at 1 mA - Confirmed avalanche onset voltage; ensures predictable turn-on during transients above system operating voltage. |
| VC max | 27.7 V at IPP = 11.7 A - Clamped voltage seen by downstream circuitry during 10/1000 µs surge; limits stress on IC inputs. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use in >1 GHz RF interfaces and high-speed data lines without signal degradation. |
| PPP | 150 W at 25 °C - Peak energy-handling capability under standardized surge waveform; supports MIL-STD-1275/DO-160 lightning-induced transient immunity. |
| TJ range | –55 °C to +175 °C - Junction temperature operating envelope; validated for extended-life deployment in engine-mounted or satellite payload electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for thermal management in sealed enclosures. |
Pinout & Package
MQ1N8158US/TR uses an axial-leaded "A" package (hard-glass hermetic case with tungsten slugs), cathode-band marked, RoHS-compliant matte tin plating over copper leads. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during positive surges | Connected to protected line; conducts only when voltage exceeds V(BR); must be routed with controlled impedance for RF integrity. |
| Cathode | Clamped output node / reference return | Connected to ground or common rail; carries full IPP during clamping; requires low-inductance path to minimize VC overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination; certified for 20+ year field life in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Internal tungsten-copper interconnect meets MIL-PRF-19500/505 reliability requirements for spaceflight and nuclear instrumentation. |
| Series rectifier integration | Enables 4 pF capacitance without external components - reduces board area and parasitic inductance versus discrete TVS+diode solutions. |
| Triple-layer passivation | Protects junction surface against contamination and ion migration; maintains stable V(BR) and ID across temperature and lifetime. |
Applications
| Aerospace Avionics Data Links | Military Radar Front-End Protection |
|---|---|
Use Scenario: Protecting RS-422/RS-485 differential pairs in airborne mission computers exposed to lightning-induced transients per DO-160 Section 22. IC Role / Device Role / Timing Role: Unidirectional clamping element on each signal line, placed immediately adjacent to connector interface. Use Value: 4 pF capacitance prevents signal rise-time degradation at 10 Mbps; 27.7 V VC ensures FPGA I/O remains within absolute maximum ratings during 100 A surges. | Use Scenario: Shielding LNA inputs in X-band radar receivers from ESD events during maintenance and electromagnetic pulse (EMP) coupling. IC Role / Device Role / Timing Role: First-stage transient limiter ahead of GaAs MMIC amplifiers; mounted directly on RF PCB edge near SMA connector. Use Value: Hermetic glass construction avoids outgassing in vacuum-rated radar modules; –55 °C to +175 °C rating supports operation inside hot radar transmitter housings. |
| Satellite Telemetry Transceivers | Nuclear Power Plant Control Sensors |
Use Scenario: Safeguarding UART and CAN FD lines in CubeSat telemetry modules subjected to single-event burnout (SEB) and total ionizing dose (TID). IC Role / Device Role / Timing Role: Radiation-hardened TVS on bidirectional command/data bus; used in anti-parallel pair for full-duplex protection. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for additional shielding; 150 W PPP handles burst-mode solar flare-induced surges. | Use Scenario: Protecting 4–20 mA analog sensor outputs in reactor coolant monitoring systems where failure is not tolerable. IC Role / Device Role / Timing Role: Fail-safe clamping device on loop-powered sensor outputs; installed in explosion-proof junction boxes. Use Value: Category 1 bond and voidless seal ensure zero latent defects after 40+ years of service; 0.5 µA ID prevents loading of precision current loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ17A | Surface-mount SMC package; 22.5 V V(BR) min; 27.6 V VC at 12.1 A; 6.5 pF capacitance. | Higher capacitance limits use in >500 MHz RF paths; lacks radiation hardness documentation and Category 1 bond certification. | Select when automated assembly and board space savings outweigh need for hermetic reliability and extreme temperature operation. |
| 1N6377 | Axial-leaded glass package; 17.1 V V(BR) min; 27.7 V VC at 11.7 A; same 4 pF CT; but commercial-grade (non-MQ) reliability level. | No MQ-level screening (JAN/MIL-PRF-19500); not qualified for space or nuclear applications; no radiation hardness data published. | Select for cost-sensitive industrial control systems where full MQ qualification is unnecessary and 175 °C operation is not required. |
Compared with SMCJ17A and 1N6377, MQ1N8158US/TR uniquely combines hermetic voidless sealing, Category 1 metallurgical bonds, documented radiation hardness, and guaranteed 4 pF capacitance - making it the only choice for flight-critical, long-lifetime, or safety-classified transient protection where failure is unacceptable.
Availability
MQ1N8158US/TR is available at Aetrix Electronics and suitable for aerospace avionics, military radar front-ends, satellite telemetry transceivers, nuclear plant sensor interfaces, and high-reliability industrial control requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8158US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and high-temperature solutions.
The MQ1N81xxUS/TR series belongs to Microsemi's high-reliability transient suppression product line, engineered specifically for mission-critical systems where zero-failure tolerance, long-term stability, and environmental survivability are mandatory design requirements.
FAQ
What is the clamping voltage of MQ1N8158US/TR at its rated peak impulse current?
The MQ1N8158US/TR has a maximum clamping voltage (VC) of 27.7 V when subjected to its rated peak impulse current (IPP) of 11.7 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and guarantees that downstream circuitry will not experience voltages exceeding 27.7 V during such transient events. The MQ1N8158US/TR maintains this VC performance across its full operating temperature range due to its hard-glass hermetic construction and stable junction characteristics.
Is MQ1N8158US/TR suitable for bidirectional signal line protection?
The MQ1N8158US/TR is inherently unidirectional, but bidirectional protection can be achieved by connecting two MQ1N8158US/TR devices in anti-parallel configuration as shown in Figure 5 of the official datasheet. This arrangement doubles the effective capacitance to 8 pF while preserving clamping symmetry. For true monolithic bidirectional TVS alternatives, other part numbers in the same family (e.g., dual-diode variants) would be required - the MQ1N8158US/TR itself is specified and tested only for unidirectional operation.
Does MQ1N8158US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the MQ1N8158US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) protection per IEC61000-4-4, as confirmed in the Applications/Benefits section of the Microsemi T4-LDS-xxxx datasheet. Its 4 pF capacitance and fast response time enable effective suppression of ±8 kV contact and ±15 kV air discharge ESD events, while its 150 W peak pulse power rating supports robust EFT burst immunity up to 4 kV.
What does the "MQ" prefix signify in MQ1N8158US/TR?
The "MQ" prefix in MQ1N8158US/TR indicates compliance with JAN (Joint Army-Navy) reliability screening per MIL-PRF-19500/505, including extended temperature testing, hermeticity validation, and Category 1 metallurgical bond qualification. It distinguishes this high-reliability variant from commercial versions (blank prefix) or other military grades like JANTX (MX) or JANS (MS). The "US" suffix denotes the axial-leaded "A" package, and "/TR" confirms tape-and-reel packaging per EIA-296.
Can MQ1N8158US/TR operate continuously at +175 °C junction temperature?
Yes, the MQ1N8158US/TR is rated for continuous operation from –55 °C to +175 °C junction temperature, as specified in the Maximum Ratings table. This rating is enabled by its voidless hermetic glass package and internal tungsten-slug thermal path. At +175 °C, derating applies: peak pulse power drops to approximately 50% of the 25 °C rating (i.e., ~75 W), as shown in Figure 3 (Derating Curve) of the datasheet - a key design consideration for high-temperature engine bay or downhole electronics applications.
MQ1N8158US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 17V
- Voltage - Breakdown (Min):
- 19V
- Voltage - Clamping (Max) @ Ipp:
- 27.7V
- Current - Peak Pulse (10/1000µs):
- 5.42A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8158US/TR FAQ
1.How can I place an order for MQ1N8158US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8158US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8158US/TR reliable?
The price and inventory of MQ1N8158US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8158US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8158US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8158US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8158US/TR?
MQ1N8158US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8158US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8158US/TR?
For technical support, including MQ1N8158US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8158US/TR requirements.
6.How does Aetrix verify that MQ1N8158US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8158US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8158US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8158US/TR?
All MQ1N8158US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8158US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8158US/TR part is unused and in its original packaging.
Return procedure for MQ1N8158US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8158US/TR Tags
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