My Inquiry
My Account
Microchip Technology MQ1N8159US/TR
- Part No.:
- MQ1N8159US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8159US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,052
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MQ1N8159US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and 18.0 V working standoff voltage (VWM), with clamping voltage of 30.5 V at 11.7 A surge current. It is used in aerospace-grade data links and RF front-end interfaces where ESD immunity and minimal signal distortion are critical.
For engineers reviewing the MQ1N8159US/TR datasheet, MQ1N8159US/TR pinout, MQ1N8159US/TR application, or MQ1N8159US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and IEC61000-4-2/4-4 compliance for mission-critical electronics.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction enables operation from –55 °C to +175 °C and supports radiation-hardened performance per MicroNote 050.
The device uses internal tungsten slugs and Category 1 metallurgical bonds for mechanical robustness and thermal stability. It is rated for 150 W peak pulse power at 25 °C with 0.01% impulse repetition rate, and exhibits 0.092 %/°C temperature coefficient of breakdown voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 18.0 V - Maximum continuous reverse standoff voltage before conduction; defines safe operating threshold for protected signal lines. |
| V(BR) min | 20.9 V - Minimum breakdown voltage at 1 mA; ensures predictable avalanche onset under transient stress. |
| VC @ IPP | 30.5 V at 11.7 A - Clamping voltage during 10/1000 µs surge; limits downstream voltage stress to ≤30.5 V. |
| CT | 4 pF - Total capacitance at 0 V; enables use in >1 GHz RF paths without signal integrity degradation. |
| PPP | 150 W - Peak pulse power rating at 25 °C; supports high-energy transients per IEC61000-4-5 Level 3. |
| TJ Range | –55 to +175 °C - Junction temperature range; validated for extended-life operation in avionics and downhole systems. |
| αV(BR) | 0.092 %/°C - Temperature coefficient of breakdown voltage; enables stable clamping across wide ambient ranges. |
Pinout & Package
MQ1N8159US/TR is housed in an axial-leaded, voidless-hermetically-sealed hard-glass package with tungsten slugs and cathode band polarity marking. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300". RoHS-compliant matte tin plating over copper leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts only during reverse-transient clamping when cathode is held higher. |
| Cathode | Negative terminal with band marking | Connected to ground or reference rail; establishes unidirectional clamping path and defines polarity-sensitive protection direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates internal moisture and gas migration, ensuring long-term parameter stability in vacuum or high-humidity environments. |
| Category 1 metallurgical bond | Internal tungsten-silicon bond qualified for MIL-PRF-19500 Class H/J applications; guarantees mechanical integrity under shock/vibration. |
| Triple-layer passivation | Enhanced surface insulation prevents leakage current drift and surface conduction under high humidity or contamination. |
| Low 4 pF capacitance | Enables direct placement on high-speed serial links (e.g., RS-422, LVDS, CAN FD) without bandwidth limiting or signal reflection. |
Applications
| Aerospace Data Bus Protection | RF Front-End ESD Suppression |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines in flight control computers against lightning-induced surges and ESD events. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at connector interface to shunt transients before entering receiver ICs. Use Value: 4 pF capacitance avoids signal rise-time degradation; 30.5 V clamping ensures downstream receivers remain within absolute maximum ratings. | Use Scenario: Shielding LNA input stages in satellite communication transceivers from human-body-model (HBM) ESD and cable discharge events. IC Role / Device Role / Timing Role: First-line transient suppressor mounted adjacent to SMA connector, before matching network and amplifier. Use Value: Hermetic glass package prevents parameter shift under thermal cycling; 175 °C max junction temperature supports operation near high-power RF stages. |
| Downhole Instrumentation Interfaces | Military Radar Signal Conditioning |
Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) in oil/gas logging tools exposed to high-temperature, high-vibration environments. IC Role / Device Role / Timing Role: Standoff-rated TVS on 4–20 mA loop lines and low-frequency analog outputs to prevent latch-up in ADC drivers. Use Value: –55 to +175 °C operating range matches downhole thermal profiles; Category 1 bond resists mechanical fatigue from drilling vibration. | Use Scenario: Protecting IF sampling inputs in phased-array radar receivers from induced transients during antenna switching or power supply coupling. IC Role / Device Role / Timing Role: Low-capacitance TVS on 100–500 MHz IF traces between mixer and ADC, minimizing group delay variation. Use Value: 4 pF capacitance preserves phase coherence across wide IF bandwidths; 150 W rating handles fast-rising radar switching spikes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ18A | Surface-mount DO-214AB package; 22.2 V V(BR) min; 29.2 V VC @ 12.3 A; 1700 pF capacitance. | Higher capacitance limits use to sub-100 MHz signals; unsuitable for RF or high-speed serial interfaces. | Select when board space is constrained and RF performance is not required; requires PCB rework for axial-to-SMD transition. |
| 1N6377 | Axial-leaded but non-hermetic epoxy package; 18.2 V V(BR) min; 29.1 V VC @ 12.2 A; 100 pF capacitance. | Lacks radiation hardness and Category 1 bonding; not qualified for aerospace or downhole use. | Acceptable for commercial industrial controls where reliability requirements are lower and cost is prioritized. |
Compared with SMCJ18A and 1N6377, MQ1N8159US/TR uniquely combines hermetic sealing, 4 pF capacitance, and Category 1 metallurgical bonding-enabling deployment in radiation-exposed, high-vibration, and multi-GHz signal environments where alternatives fail qualification.
Availability
MQ1N8159US/TR is available at Aetrix Electronics and suitable for aerospace data buses, RF front-end protection, downhole instrumentation interfaces, and military radar signal conditioning requiring stable component supply across extended temperature and reliability lifecycles.
Supply support for MQ1N8159US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and high-performance analog and mixed-signal components for defense, aerospace, and industrial markets.
The MQ1N81xxUS/TR series belongs to Microsemi's high-reliability TVS family, engineered specifically for mission-critical transient protection in environments demanding hermeticity, extreme temperature resilience, and immunity to radiation and mechanical stress.
FAQ
What is the clamping voltage of MQ1N8159US/TR at its rated surge current?
The MQ1N8159US/TR has a maximum clamping voltage (VC) of 30.5 V when subjected to its rated peak impulse current (IPP) of 11.7 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and ensures downstream circuitry remains within safe operating limits during transient events. The MQ1N8159US/TR maintains this clamping performance across its full –55 °C to +175 °C junction temperature range, with minor derating above 25 °C per the published derating curve.
Is MQ1N8159US/TR RoHS compliant?
Yes, MQ1N8159US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature. Its axial leads feature matte tin plating over copper, fully satisfying EU Directive 2011/65/EU requirements. The hermetic glass package contains no lead-based solder or hazardous substances, and the device is certified to meet JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life).
How does the 4 pF capacitance of MQ1N8159US/TR benefit high-frequency applications?
The 4 pF total capacitance of MQ1N8159US/TR minimizes loading on high-speed signal paths, preserving signal integrity up to several GHz. For example, at 1 GHz, its capacitive reactance is ~40 Ω-low enough to avoid significant reflection or attenuation in 50 Ω systems. This enables direct integration into RF front-ends, high-speed data buses, and precision analog sensor interfaces where conventional TVS diodes (typically >100 pF) would distort timing or degrade SNR. The MQ1N8159US/TR achieves this via its patented series-diode architecture.
What does "Category 1 metallurgical bond" mean for MQ1N8159US/TR?
"Category 1 metallurgical bond" refers to Microsemi's proprietary internal tungsten-silicon interconnect technology, qualified to MIL-PRF-19500 Class H and J standards. It provides superior mechanical strength, thermal conductivity, and resistance to thermomechanical fatigue compared to standard aluminum wire bonds. For MQ1N8159US/TR, this ensures reliable operation under sustained vibration, thermal shock, and high-G acceleration-critical for aerospace, missile, and downhole tool applications where bond failure is unacceptable.
Can MQ1N8159US/TR be used for bidirectional protection?
No, MQ1N8159US/TR is strictly unidirectional. However, bidirectional low-capacitance protection can be achieved by placing two MQ1N8159US/TR devices in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains clamping symmetry. For true single-device bidirectional protection, alternate families such as Microsemi's MMBZ series would be required-but those lack the hermetic seal and Category 1 bond of MQ1N8159US/TR.
MQ1N8159US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 30.5V
- Current - Peak Pulse (10/1000µs):
- 4.92A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8159US/TR FAQ
1.How can I place an order for MQ1N8159US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8159US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8159US/TR reliable?
The price and inventory of MQ1N8159US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8159US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8159US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8159US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8159US/TR?
MQ1N8159US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8159US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8159US/TR?
For technical support, including MQ1N8159US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8159US/TR requirements.
6.How does Aetrix verify that MQ1N8159US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8159US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8159US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8159US/TR?
All MQ1N8159US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8159US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8159US/TR part is unused and in its original packaging.
Return procedure for MQ1N8159US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8159US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
