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Microchip Technology MQ1N8160US/TR
- Part No.:
- MQ1N8160US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8160US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,183
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Product details
Overview
MQ1N8160US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 20 V working standoff voltage (VWM), 33.3 V maximum clamping voltage (VC) at 300 A IPP, and ultra-low 4 pF capacitance - ideal for ESD/EFT protection in RF front-ends and data communication interfaces.
For engineers reviewing the MQ1N8160US/TR datasheet, MQ1N8160US/TR pinout, MQ1N8160US/TR application, or MQ1N8160US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging for harsh environments, and compatibility with IEC61000-4-2/4-4/4-5 compliance testing.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W rated device. Its hard-glass hermetic construction eliminates internal voids and supports operation from –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamp with 20 V working standoff voltage and 22.8 V minimum breakdown voltage at 1 mA. Clamping occurs at ≤33.3 V under 300 A 10/1000 µs surge, delivering robust secondary lightning protection per select IEC61000-4-5 levels without degrading high-speed signal integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets operating margin for protected signal lines. |
| V(BR) min | 22.8 V at 1 mA - Confirmed avalanche onset threshold; ensures predictable turn-on during transients. |
| VC @ IPP | 33.3 V at 300 A (10/1000 µs) - Peak clamped voltage seen by downstream circuitry during worst-case surge. |
| CT | 4 pF at 0 V - Enables use on >1 GHz RF paths and high-baud-rate serial links without signal distortion. |
| PPP | 150 W - Sustains standardized 10/1000 µs surge energy without degradation; validated per MIL-STD-750. |
| TJ range | –55 °C to +175 °C - Supports deployment in aerospace, downhole, and military systems with extreme thermal cycling. |
| RθJA | 150 °C/W - Thermal resistance defines derating curve; requires minimal PCB copper for 1 W steady-state dissipation. |
Pinout & Package
MQ1N8160US/TR uses an axial-leaded "A" package (hard-glass hermetic, voidless, tungsten slug construction) with cathode band marking. Leads are RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased) | Connected to protected line; conducts surge current to ground when V > VWM. |
| Cathode | Reference node (marked with band) | Typically tied to system ground or low-impedance return; defines polarity of unidirectional clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - critical for 20+ year field life in sealed enclosures. |
| Category 1 metallurgical bond | Internal tungsten-copper bond qualified for high-reliability applications per MIL-PRF-19500/530. |
| Low 4 pF capacitance | Preserves signal rise time and impedance matching on RF antennas, USB 3.0, HDMI, and PCIe traces. |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 2 kV line-to-ground lightning surges. |
| Nonsensitive to ESD | Withstands handling per MIL-STD-750 Method 1020 - no special ESD controls required during assembly. |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA input and PA output stages in UHF/VHF transceivers from ESD and nearby lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional voltage clamp placed directly at connector or IC pin to limit transient excursions below 33.3 V. Use Value: 4 pF capacitance avoids detuning antenna matching networks; 150 W rating handles multi-kA induced surges without failure. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B differential receivers against coupling from adjacent power switching noise. IC Role / Device Role / Timing Role: Standoff-rated TVS on each signal line referenced to chassis ground, leveraging 20 V VWM to avoid false triggering during normal 12–28 V bus swings. Use Value: Hermetic construction ensures long-term reliability across thermal vacuum cycles; Category 1 bond prevents interfacial fatigue in vibration-prone installations. |
| Downhole Telemetry Systems | Military Radar Power Supply Monitoring |
Use Scenario: Transient suppression on sensor excitation lines and analog telemetry outputs in oil/gas wellhead electronics operating at 175 °C ambient. IC Role / Device Role / Timing Role: Primary overvoltage protector on 24 V DC sensor supply rails exposed to cable discharge events during rig maintenance. Use Value: Full –55 °C to +175 °C operational range enables direct placement near sensors; 300 A surge capability withstands motor-start induced spikes. | Use Scenario: Clamping transient spikes on +15 V and –15 V op-amp supply rails in radar receiver analog signal chains. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted at power entry points to prevent latch-up or gate oxide damage in precision amplifiers. Use Value: 4 pF loading avoids destabilizing high-gain feedback loops; 150 W PPP rating absorbs repetitive switching transients from GaN FET drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ20A | Surface-mount DO-214AB package; 22.2 V VWM; 32.4 V VC @ 32.4 A; 6.5 pF capacitance. | Limited to lower-energy surges (1500 W vs. 150 W); higher capacitance restricts RF use. | Select for cost-sensitive industrial PCBs where board space is constrained and RF performance is not required. |
| 1N6375 | Axial-leaded glass package; 20 V VWM; 33.3 V VC @ 300 A; 10 pF capacitance; non-hermetic construction. | No Category 1 bond or voidless seal; unsuitable for extended-life aerospace or downhole deployments. | Choose for commercial-grade telecom infrastructure where full MIL-spec reliability is unnecessary. |
Compared with SMCJ20A and 1N6375, MQ1N8160US/TR uniquely combines 4 pF capacitance, hermetic voidless sealing, and Category 1 metallurgical bonding - making it the only option qualified for mission-critical RF and high-temperature embedded systems requiring zero-failure tolerance.
Availability
MQ1N8160US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, and downhole telemetry systems requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8160US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.
The MQ1N81xxUS/TR series belongs to Microsemi's high-reliability transient suppression product line, engineered specifically for applications where failure is not an option - including satellite communications, downhole instrumentation, and airborne radar systems.
FAQ
What is the clamping voltage of MQ1N8160US/TR under a 300 A 10/1000 µs surge?
The MQ1N8160US/TR clamps to a maximum of 33.3 V when subjected to a 300 A 10/1000 µs transient pulse. This value is measured per standard test conditions defined in the datasheet and represents the peak voltage imposed on the protected circuit during worst-case surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is MQ1N8160US/TR RoHS compliant?
Yes, MQ1N8160US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature. The axial leads feature matte tin plating over copper, meeting lead-free soldering requirements up to 260 °C for 10 seconds. Compliance is verified per EU Directive 2011/65/EU and applies to both material content and manufacturing process.
How does the 4 pF capacitance of MQ1N8160US/TR benefit high-frequency designs?
The 4 pF capacitance of MQ1N8160US/TR minimizes signal reflection and phase shift on high-speed lines, enabling reliable use on RF antenna feeds up to 2.4 GHz and serial data links like USB 2.0. Unlike higher-capacitance TVS devices, MQ1N8160US/TR avoids degrading impedance matching or causing jitter - preserving signal fidelity while maintaining full 150 W surge capability.
Can MQ1N8160US/TR be used for bidirectional protection?
MQ1N8160US/TR is unidirectional by design, but bidirectional protection can be achieved by placing two units in anti-parallel configuration as shown in Figure 5 of the datasheet. This arrangement doubles total capacitance to 8 pF while maintaining 20 V standoff and 33.3 V clamping - suitable for AC-coupled or differential signal lines where polarity reversal occurs.
What is the maximum operating temperature range for MQ1N8160US/TR?
MQ1N8160US/TR is rated for junction and storage temperatures from –55 °C to +175 °C. This extended range is enabled by its voidless hermetic glass package and Category 1 metallurgical bond, allowing deployment in downhole tools, jet engine controllers, and space-qualified electronics where conventional plastic-packaged TVS devices would fail.
MQ1N8160US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 20V
- Voltage - Breakdown (Min):
- 22.8V
- Voltage - Clamping (Max) @ Ipp:
- 33.3V
- Current - Peak Pulse (10/1000µs):
- 4.5A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8160US/TR FAQ
1.How can I place an order for MQ1N8160US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8160US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8160US/TR reliable?
The price and inventory of MQ1N8160US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8160US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8160US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8160US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8160US/TR?
MQ1N8160US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8160US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8160US/TR?
For technical support, including MQ1N8160US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8160US/TR requirements.
6.How does Aetrix verify that MQ1N8160US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8160US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8160US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8160US/TR?
All MQ1N8160US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8160US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8160US/TR part is unused and in its original packaging.
Return procedure for MQ1N8160US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8160US/TR Tags
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