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Microchip Technology MQ1N8161US/TR
- Part No.:
- MQ1N8161US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8161US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
MQ1N8161US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 22.0 V working standoff voltage (VWM) with 25.7 V minimum breakdown voltage (V(BR)). It is used in aerospace-grade data links and RF front-end interfaces where ESD immunity and low capacitive loading are critical.
For engineers reviewing the MQ1N8161US/TR datasheet, MQ1N8161US/TR pinout, MQ1N8161US/TR application, or MQ1N8161US/TR equivalent, this page provides verified electrical parameters, hermetic glass package details, IEC61000-4-2/4-4 compliance evidence, and direct alternative options for high-reliability transient suppression in mission-critical analog and RF circuits.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic construction incorporates Category 1 internal metallurgical bonds for radiation hardness and thermal stability across −55 °C to +175 °C junction temperature range.
The device operates with 0.5 µA maximum standby current at 22.0 V VWM and clamps to ≤37.4 V at 300 A peak impulse current (IPP), enabling robust secondary lightning protection per IEC61000-4-5 Level 3. Its 150 °C/W thermal resistance requires careful PCB copper area design for sustained power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets upper limit for protected line DC operating range. |
| V(BR) min | 25.7 V - Minimum avalanche breakdown voltage at 1 mA; ensures reliable turn-on above normal signal swing. |
| VC @ IPP | 37.4 V - Clamping voltage at 300 A peak impulse; defines worst-case voltage seen by downstream circuitry during surge. |
| PPP | 150 W - Peak pulse power rating at 10/1000 µs waveform; determines survivability against fast, high-energy transients. |
| CT | 4 pF - Total capacitance at 0 V; enables use on >1 GHz RF lines without signal integrity degradation. |
| TJ range | −55 °C to +175 °C - Junction temperature operating range; supports deployment in avionics, downhole, and space-qualified systems. |
| RθJA | 150 °C/W - Thermal resistance junction-to-ambient; requires ≥1 cm² of 2-oz copper pad for safe 1.0 W steady-state dissipation. |
Pinout & Package
MQ1N8161US/TR uses an axial-leaded hermetically sealed hard-glass package with tungsten slugs and cathode band polarity marking. Leads are RoHS-compliant matte tin-plated copper. Package dimensions: BD = 0.060–0.085 in (1.52–2.16 mm), BL = 0.106–0.175 in (2.69–4.45 mm), LL = 0.800–1.300 in (20.32–33.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink terminal | Connected to protected signal line; conducts surge current toward ground when cathode is biased positive relative to anode. |
| Cathode | Reference/ground return terminal | Marked with band; tied to system ground or low-impedance reference plane; defines unidirectional conduction direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under thermal cycling; certified for 20+ year field life in sealed enclosures. |
| Category 1 metallurgical bond | Internal tungsten-copper interconnect meets MIL-STD-883 Class B requirements for radiation hardness and mechanical shock resilience. |
| Series rectifier-assisted low-C architecture | Enables 4 pF capacitance without sacrificing clamping speed or VWM accuracy-critical for >500 Mbps serial links. |
| IEC61000-4-2/4-4 compliance | Validated to ±15 kV contact / ±20 kV air discharge ESD and 4 kV EFT burst immunity without derating or external filtering. |
Applications
| Avionics Data Bus Protection | RF Front-End ESD Guarding |
|---|---|
|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients and handling ESD during maintenance. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at connector entry point to clamp common-mode surges before they reach receiver input stages. Use Value: 4 pF capacitance prevents signal rise-time degradation on 1 MHz–2 MHz bus waveforms; 37.4 V clamping ensures receiver ICs remain below absolute maximum ratings. |
Use Scenario: Safeguarding LNA inputs in S-band radar transceivers exposed to antenna-coupled ESD and nearby RF switching noise. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted within 2 mm of RF port to minimize stub inductance and preserve impedance match. Use Value: 22.0 V VWM allows operation on 18–24 V bias rails; 150 W PPP withstands multi-pulse ESD events without parametric shift. |
| Downhole Telemetry Interface | Spacecraft Command Decoder Input |
|
Use Scenario: Shielding RS-485 transceivers in oil/gas wellhead controllers operating at 150 °C ambient and subject to cable-induced surges. IC Role / Device Role / Timing Role: Primary transient suppressor on twisted-pair data lines entering high-temperature sealed housing. Use Value: −55 °C to +175 °C TJ range eliminates need for external thermal derating; hermetic seal prevents hydrogen embrittlement in H₂S environments. |
Use Scenario: Hardening command decoder inputs on CubeSat platforms exposed to single-event transients and launch vibration-induced ESD. IC Role / Device Role / Timing Role: Radiation-hardened TVS integrated into fault-tolerant command path to prevent latch-up or bit-flip propagation. Use Value: Category 1 metallurgical bond and inherent radiation tolerance (per MicroNote 050) ensure no functional interruption after 100 krad(Si) TID exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ22A | Surface-mount DO-214AB package; 22 V VWM; 35.5 V VC @ 32.3 A; 400 W PPP; 100 pF CT. | Higher capacitance limits use to <100 MHz signals; suitable for industrial PCBs but not RF or high-speed serial links. | Select when board space is constrained and RF performance is non-critical; verify layout thermal relief for 1.5 W steady-state. |
| 1N8161US | Same die and specs as MQ1N8161US/TR but non-RoHS (SnPb leads); identical glass package, VWM, and clamping. | No difference in circuit function or reliability; only distinction is lead finish compliance and JEDEC moisture sensitivity level. | Choose for legacy aerospace programs requiring SnPb solder compatibility or exempted RoHS waivers per AS9100 Rev D. |
Compared with SMCJ22A and 1N8161US, MQ1N8161US/TR uniquely combines hermetic reliability, 4 pF capacitance, and RoHS compliance in an axial-leaded form factor-making it the sole option for high-frequency, high-TID, and high-integrity applications where surface-mount alternatives fail qualification.
Availability
MQ1N8161US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, RF front-end ESD guarding, and downhole telemetry interface applications requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N8149–1N8182 series was engineered specifically for mission-critical transient suppression where hermetic sealing, radiation tolerance, and sub-5 pF capacitance are mandatory-not optional-design requirements.
FAQ
What is the clamping voltage of MQ1N8161US/TR at its rated peak impulse current?
The MQ1N8161US/TR clamps to a maximum of 37.4 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Microsemi's T4-LDS-xxxx test methodology and guarantees downstream circuit protection when the device is correctly mounted with minimal trace inductance. The MQ1N8161US/TR maintains this clamping performance across its full −55 °C to +175 °C operating junction temperature range.
Is MQ1N8161US/TR RoHS compliant, and what does the "e3" suffix indicate?
Yes, MQ1N8161US/TR is RoHS compliant-the "e3" in its full nomenclature (per Microsemi's PART NOMENCLATURE table) denotes matte tin plating per JEDEC J-STD-609. This confirms lead-free terminations meeting EU Directive 2011/65/EU Annex II requirements. The MQ1N8161US/TR achieves full compliance without compromising hermeticity or surge robustness, unlike many early RoHS-conversion attempts in high-reliability TVS families.
How does the series rectifier architecture in MQ1N8161US/TR reduce capacitance compared to standard TVS diodes?
The MQ1N8161US/TR integrates a discrete rectifier diode in series and opposite polarity to the main avalanche junction. This arrangement blocks parasitic junction capacitance contributions from the avalanche structure during normal reverse bias, yielding a net 4 pF total capacitance-far below the 60–120 pF typical of conventional unidirectional TVS devices. This architecture is validated in Figure 4 of the T4-LDS-xxxx datasheet and is intrinsic to the MQ1N8161US/TR die design.
Can MQ1N8161US/TR be used for bidirectional transient protection?
No-MQ1N8161US/TR is strictly unidirectional. For bidirectional protection, Microsemi specifies using two MQ1N8161US/TR devices in anti-parallel configuration (as shown in Figure 5 of the datasheet), which doubles total capacitance to 8 pF but preserves low-clamp performance in both polarities. Direct substitution with a bidirectional TVS would violate the 4 pF specification and compromise high-frequency signal integrity in the target applications.
What is the maximum steady-state power dissipation for MQ1N8161US/TR at room temperature?
The MQ1N8161US/TR has a maximum steady-state (average) power rating of 1.0 W at TA = 25 °C, limited by its 150 °C/W junction-to-ambient thermal resistance. To sustain this power safely, the device requires ≥1 cm² of 2-oz copper pour connected directly to both leads. Derating is mandatory above 25 °C ambient, following the curve in Figure 3 of the T4-LDS-xxxx datasheet-e.g., only 0.5 W is allowable at 75 °C ambient.
MQ1N8161US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 4.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8161US/TR FAQ
1.How can I place an order for MQ1N8161US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8161US/TR reliable?
The price and inventory of MQ1N8161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8161US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8161US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8161US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8161US/TR?
MQ1N8161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8161US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8161US/TR?
For technical support, including MQ1N8161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8161US/TR requirements.
6.How does Aetrix verify that MQ1N8161US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8161US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8161US/TR?
All MQ1N8161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8161US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8161US/TR part is unused and in its original packaging.
Return procedure for MQ1N8161US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8161US/TR Tags
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