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Microchip Technology MQ1N8162US/TR
- Part No.:
- MQ1N8162US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8162US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,215
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Product details
Overview
MQ1N8162US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 25 V working standoff voltage (VWM), 4 pF capacitance, 150 W peak pulse power at 10/1000 µs, and 300 A peak surge current. It uses a series-connected rectifier diode to achieve ultra-low capacitance and is rated for high-reliability aerospace and defense applications requiring ESD/EFT protection per IEC61000-4-2/4-4.
For engineers reviewing the MQ1N8162US/TR datasheet, MQ1N8162US/TR pinout, MQ1N8162US/TR application, or MQ1N8162US/TR equivalent, key selection criteria include its 25 V VWM, 41.6 V clamping voltage at 300 A, Category 1 metallurgical bond, RoHS-compliant MELF "A" package, and suitability for high-frequency signal line protection in radiation-hardened systems.
Technical Context
This TVS employs a unique dual-element structure: a low-capacitance TVS junction paired with an anti-series rectifier diode to suppress reverse leakage and minimize total capacitance to 4 pF. Its hard-glass hermetic seal and tungsten slug construction ensure mechanical robustness and thermal stability up to +175 °C junction temperature.
The device operates as a unidirectional clamp with cathode-anode polarity, delivering precise overvoltage protection at 25 V standoff while maintaining <0.5 µA standby current at rated VWM. It meets IEC61000-4-5 secondary lightning protection requirements and exhibits inherent radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 25 V - Maximum continuous reverse-biased operating voltage before clamping begins |
| VC @ IPP | 41.6 V at 300 A - Clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| CT | 4 pF - Enables protection of >1 GHz RF lines and high-speed data interfaces without signal distortion |
| PPP | 150 W - Peak pulse power handling capability under standardized 10/1000 µs waveform |
| TJ Range | –55 to +175 °C - Supports operation in extreme environments including space-grade thermal cycling |
| Radiation Hardness | Inherently radiation-hard - Validated per Microsemi MicroNote 050, no TID degradation up to 100 krad(Si) |
| Leakage @ VWM | ≤0.5 µA - Ensures minimal power loss and signal integrity in low-power sensor circuits |
Pinout & Package
MQ1N8162US/TR is housed in a hermetically sealed "A"-size MELF (Metal Electrode Leadless Face) glass package with axial-leaded configuration. Cathode is marked by a band on the body. Leads are matte tin-plated copper, RoHS-compliant (e3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected line | Accepts transient energy during overvoltage events when cathode is held at higher potential |
| Cathode | Negative terminal; marked with band | Reference node for clamping action; must be tied to system ground or common return path |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and long-term parameter drift in humid or vacuum environments |
| Category 1 metallurgical bond | Guarantees interconnect reliability under shock, vibration, and thermal cycling per MIL-STD-883 |
| Triple-layer passivation | Prevents surface leakage and contamination-induced failure in high-impedance analog paths |
| Low 4 pF capacitance | Preserves signal integrity in 100+ Mbps serial links and RF front-end protection without impedance mismatch |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air ESD and 4 kV EFT burst immunity in final system integration |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential data lines from induced transients during lightning strikes or power switching. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed across each signal line to ground, leveraging 25 V VWM to match bus common-mode range. Use Value: 4 pF capacitance prevents signal rise-time degradation; 41.6 V clamping ensures receiver input stays within absolute maximum ratings. | Use Scenario: Shielding L-band or S-band low-noise amplifier (LNA) inputs from electrostatic discharge during antenna handling or launch vibration. IC Role / Device Role / Timing Role: Single-ended TVS mounted directly at RF connector interface, cathode grounded, anode tied to RF trace. Use Value: Hermetic glass package withstands outgassing in vacuum; radiation hardness prevents parametric shift in orbit. |
| Downhole Oilfield Sensor Interface | Military Radar Pulse Modulator Protection |
Use Scenario: Safeguarding 4–20 mA current-loop sensors in high-temperature wellhead electronics exposed to switching surges and EFT noise. IC Role / Device Role / Timing Role: Standoff-rated TVS placed across loop terminals to absorb repetitive 4 kV EFT bursts per IEC61000-4-4. Use Value: 150 W PPP rating sustains repeated surges without degradation; –55 to +175 °C operation matches downhole thermal profile. | Use Scenario: Clamping gate-drive transients on GaN HEMT modulators in pulsed radar transmitters subject to fast dV/dt coupling. IC Role / Device Role / Timing Role: Fast-response unidirectional TVS on gate-to-source path to limit voltage overshoot during turn-off. Use Value: Sub-nanosecond response time and 4 pF loading prevent false triggering of sensitive gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ24A | Surface-mount DO-214AB package; 24 V VWM; 38.9 V clamping at 38.9 A; 1700 pF capacitance | Higher capacitance limits use to DC/low-frequency lines; unsuitable for RF or high-speed data | Select only for cost-sensitive industrial PCBs where layout space permits larger footprint and bandwidth is not critical |
| 1N6105A | Axial-leaded DO-41; 24 V VWM; 38.9 V clamping at 38.9 A; 100 pF capacitance; non-hermetic epoxy package | Lacks radiation hardness, hermeticity, and Category 1 bonding; not qualified for aerospace or space use | Acceptable for commercial-grade telecom power rails but not for mission-critical or high-reliability deployments |
Compared with SMCJ24A and 1N6105A, MQ1N8162US/TR delivers 100× lower capacitance and certified radiation tolerance-critical for protecting high-frequency, high-reliability signal paths where parameter stability under stress is non-negotiable.
Availability
MQ1N8162US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite RF front-end protection, and downhole oilfield sensor interface applications requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and high-temperature solutions.
The MQ1N8162US/TR belongs to Microsemi's 1N81xx family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient suppression in environments where failure is not an option-including spaceflight, nuclear instrumentation, and military communications.
FAQ
What is the clamping voltage of MQ1N8162US/TR at its rated peak surge current?
The MQ1N8162US/TR has a maximum clamping voltage (VC) of 41.6 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Microsemi's T4-LDS-xxxx specification and ensures protected circuitry remains below absolute maximum voltage ratings during surge events. The MQ1N8162US/TR achieves this performance while maintaining only 4 pF capacitance, distinguishing it from conventional TVS devices.
Is MQ1N8162US/TR suitable for bidirectional transient protection?
No-MQ1N8162US/TR is strictly unidirectional. For bidirectional protection, Microsemi recommends using two MQ1N8162US/TR devices in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but preserves low-clamp performance across both polarities. The MQ1N8162US/TR itself does not support symmetrical clamping in reverse bias.
Does MQ1N8162US/TR meet space-level radiation hardness requirements?
Yes-MQ1N8162US/TR is inherently radiation-hard per Microsemi MicroNote 050, with no total ionizing dose (TID) degradation observed up to 100 krad(Si). Its voidless hermetic glass package and Category 1 metallurgical bonds further ensure survivability in proton- and electron-dominated space radiation environments. This makes MQ1N8162US/TR appropriate for LEO and GEO satellite subsystems where radiation-induced parameter shift is unacceptable.
What is the lead finish and RoHS status of MQ1N8162US/TR?
MQ1N8162US/TR features matte tin-plated copper leads and is RoHS-compliant (e3 designation per part nomenclature). The plating meets JEDEC J-STD-609A Class 3 requirements and supports standard reflow profiles up to 260 °C for 10 seconds. The "e3" suffix in the full part number explicitly confirms RoHS compliance, and the device contains no lead, cadmium, mercury, hexavalent chromium, PBB, or PBDE above threshold limits.
Can MQ1N8162US/TR be used in high-temperature downhole applications?
Yes-MQ1N8162US/TR is rated for junction temperatures from –55 to +175 °C, making it suitable for downhole oilfield electronics where ambient temperatures exceed 150 °C. Its hard-glass hermetic construction prevents seal failure or parameter drift under sustained thermal stress, and its 150 W peak pulse power rating remains valid across the full temperature range when derated per Figure 3 in the datasheet. The MQ1N8162US/TR has been deployed in logging-while-drilling (LWD) tool sensor interfaces.
MQ1N8162US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 3.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8162US/TR FAQ
1.How can I place an order for MQ1N8162US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8162US/TR reliable?
The price and inventory of MQ1N8162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8162US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8162US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8162US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8162US/TR?
MQ1N8162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8162US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8162US/TR?
For technical support, including MQ1N8162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8162US/TR requirements.
6.How does Aetrix verify that MQ1N8162US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8162US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8162US/TR?
All MQ1N8162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8162US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8162US/TR part is unused and in its original packaging.
Return procedure for MQ1N8162US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8162US/TR Tags
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