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Microchip Technology MQ1N8163US/TR
- Part No.:
- MQ1N8163US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8163US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,171
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Product details
Overview
MQ1N8163US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 31.4 V minimum breakdown voltage (V(BR)), 28.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF, telecom, and avionics data links.
For engineers reviewing the MQ1N8163US/TR datasheet, MQ1N8163US/TR pinout, MQ1N8163US/TR application, or MQ1N8163US/TR equivalent, key selection criteria include clamping voltage (45.7 V max at 3.28 A), low leakage (0.5 µA max at VWM), Category 1 metallurgical bond reliability, RoHS-compliant MELF "A" package, and IEC61000-4-2/4-4/4-5 compliance for secondary lightning and surge immunity.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W rated device. Its hard-glass hermetic seal and tungsten slug construction ensure robust thermal dissipation (RθJA = 150 °C/W) and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature, supports axial-leaded through-hole mounting, and achieves 45.7 V clamping voltage (VC) at 3.28 A peak impulse current (IPP), meeting MIL-STD-750 Method 1020 for ESD insensitivity and IEC61000-4-5 Level 3 secondary lightning protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 28.0 V - Maximum continuous reverse operating voltage before leakage exceeds 0.5 µA |
| V(BR) min | 31.4 V - Minimum breakdown voltage at 1 mA test current, defining turn-on threshold |
| VC @ IPP | 45.7 V - Clamping voltage at 3.28 A IPP, limiting downstream circuit stress during transients |
| PPP | 150 W - Peak pulse power handling at 10/1000 µs waveform, critical for surge immunity |
| CT | 4 pF - Total capacitance at 0 V, enabling use on >1 GHz RF lines without signal degradation |
| TJ range | –55 °C to +175 °C - Extended thermal operating envelope for aerospace and downhole applications |
| Package | MELF "A" - Surface-mount hermetic glass package with axial leads, RoHS-compliant matte tin plating |
Pinout & Package
MQ1N8163US/TR uses a two-terminal MELF "A" package with cathode band marking. Terminals are axial leads plated with RoHS-compliant matte tin over copper. Mounting is position-independent; no PCB footprint polarity reversal required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink input | Connected to protected signal line; conducts during overvoltage events to shunt energy to ground |
| Cathode | Reference terminal | Marked by band; tied to system ground or lower-potential rail to establish unidirectional clamping direction |
Key Features
| Feature | Design Value |
|---|---|
| Lowest capacitance for 150 W TVS | 4 pF enables protection of high-speed serial interfaces (e.g., USB 3.0, PCIe Gen2) without bandwidth loss |
| Category 1 metallurgical bond | Internal tungsten-slug bond ensures long-term reliability under thermal cycling and mechanical shock |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination, supporting 20+ year field life in sealed systems |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±8 kV contact / ±15 kV air ESD, 4 kV EFT bursts, and 1 kV/2 Ω lightning surges |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID) per Microsemi MicroNote 050, suitable for space-grade designs |
Applications
| RF Front-End Protection | Aerospace Data Bus |
|---|---|
Use Scenario: Protecting LNA inputs and mixer outputs in S-band radar transceivers from ESD and induced transients. IC Role / Device Role: Unidirectional TVS placed directly at RF connector interface to clamp fast transients before signal path entry. Use Value: 4 pF capacitance avoids detuning of 2.4–3.5 GHz matching networks; 45.7 V clamping preserves LNA input stage integrity. | Use Scenario: Safeguarding ARINC 429 receive lines in flight control computers against lightning-induced surges. IC Role / Device Role: Standoff-rated TVS on differential data lines, leveraging 28.0 V VWM to avoid false triggering during normal 27 V aircraft bus transients. Use Value: –55 °C to +175 °C operation supports extended environmental qualification; Category 1 bond meets DO-160 Section 22 Level 3 requirements. |
| Medical Ultrasound Imaging | Industrial Ethernet PHY |
Use Scenario: Shielding high-frequency echo signal paths (5–15 MHz) in portable ultrasound probes from cable discharge events. IC Role / Device Role: Low-capacitance TVS on analog front-end channels adjacent to transducer elements. Use Value: Sub-5 pF CT prevents amplitude distortion and phase shift in time-of-flight measurements; hermetic seal resists sterilization humidity. | Use Scenario: Protecting 100BASE-TX transformer-coupled PHY lanes in factory automation gateways from EFT and surge coupling. IC Role / Device Role: Unidirectional TVS on MDI lines referenced to isolated PHY ground, coordinated with common-mode chokes. Use Value: 150 W PPP handles repetitive 4 kV EFT bursts per IEC61000-4-4; 0.5 µA ID ensures no DC loading on bias-sensitive termination. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ28A | Higher 15 pF capacitance; 30.8 V VWM; 43.5 V VC @ 3.45 A; DO-214AA package | Not suitable for >500 MHz RF lines; requires larger PCB area; lower thermal resistance (RθJA = 50 °C/W) | Select when board space allows larger SMC/SMB package and RF bandwidth < 200 MHz |
| 1.5KE27A | 300 W PPP; 27 V VWM; 43.0 V VC @ 6.98 A; axial leaded DO-201 package; 10 pF CT | Higher capacitance limits high-speed data use; higher surge rating suits primary lightning protection stages | Choose for cost-sensitive industrial mains-side protection where 4 pF is not required |
Compared with SMBJ28A and 1.5KE27A, MQ1N8163US/TR uniquely combines 4 pF capacitance, hermetic MELF packaging, and Category 1 reliability - making it irreplaceable for RF, aerospace, and medical signal-path protection where both speed and long-term stability are mandatory.
Availability
MQ1N8163US/TR is available at Aetrix Electronics and suitable for RF front-end protection, aerospace data bus safeguarding, and medical ultrasound imaging requiring stable component supply and long-lifecycle assurance.
Supply support for MQ1N8163US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure ICs for defense, aerospace, and industrial markets.
The 1N8149–1N8182 series was engineered specifically for mission-critical transient suppression in high-frequency analog and digital signal paths where conventional TVS diodes introduce unacceptable capacitive loading or reliability risk.
FAQ
What is the clamping voltage of MQ1N8163US/TR at its rated peak impulse current?
The MQ1N8163US/TR has a maximum clamping voltage (VC) of 45.7 V at 3.28 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures downstream components like LNAs or PHY receivers remain within safe operating voltage limits during transient events. The MQ1N8163US/TR maintains this performance across its full –55 °C to +175 °C operating range, with minimal derating up to 125 °C.
Is MQ1N8163US/TR suitable for bidirectional signal line protection?
No - MQ1N8163US/TR is a unidirectional TVS diode. For bidirectional protection, two MQ1N8163US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same 28.0 V standoff and 45.7 V clamping performance per polarity.
Does MQ1N8163US/TR meet RoHS compliance requirements?
Yes - the "e3" suffix in MQ1N8163US/TR indicates RoHS-compliant matte tin plating over copper leads. The device conforms to EU Directive 2011/65/EU and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Full material declarations and test reports are available upon request from Aetrix Electronics.
What is the thermal resistance and steady-state power rating of MQ1N8163US/TR?
The MQ1N8163US/TR has a thermal resistance of 150 °C/W (junction-to-ambient) and a steady-state average power rating of 1.0 W at TA = 25 °C. This rating assumes adequate PCB copper area for heat spreading; exceeding 1.0 W continuously risks junction temperature rise beyond the +175 °C absolute maximum, especially in enclosed or high-ambient environments.
Can MQ1N8163US/TR be used in space-grade applications?
Yes - MQ1N8163US/TR features inherent radiation hardness per Microsemi MicroNote 050 and uses Category 1 internal metallurgical bonds with voidless hermetic glass packaging. These characteristics support qualification for low-earth orbit (LEO) missions and make MQ1N8163US/TR a preferred choice for satellite telemetry, command, and payload interface protection where single-event burnout (SEB) immunity is required.
MQ1N8163US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 3.28A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8163US/TR FAQ
1.How can I place an order for MQ1N8163US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8163US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8163US/TR reliable?
The price and inventory of MQ1N8163US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8163US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8163US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8163US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8163US/TR?
MQ1N8163US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8163US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8163US/TR?
For technical support, including MQ1N8163US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8163US/TR requirements.
6.How does Aetrix verify that MQ1N8163US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8163US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8163US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8163US/TR?
All MQ1N8163US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8163US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8163US/TR part is unused and in its original packaging.
Return procedure for MQ1N8163US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8163US/TR Tags
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Diodes Incorporated
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