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Microchip Technology MQ1N8164US/TR
- Part No.:
- MQ1N8164US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8164US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,396
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Product details
Overview
MQ1N8164US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 34.2 V working standoff voltage (VWM), 49.9 V peak clamping voltage (VC) at 3.01 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for 10/1000 µs waveform. It employs a series-connected rectifier diode to achieve ultra-low capacitance and is designed for ESD/EFT protection in high-frequency telecom and data-line interfaces.
For engineers reviewing the MQ1N8164US/TR datasheet, MQ1N8164US/TR pinout, MQ1N8164US/TR application, or MQ1N8164US/TR equivalent, key selection criteria include its 34.2 V VWM, 49.9 V VC under 3.01 A surge, 4 pF low-capacitance architecture, Category 1 metallurgical bond reliability, and axial-leaded glass package suited for high-reliability through-hole mounting.
Technical Context
This TVS uses a unique internal configuration: a unidirectional TVS die connected in series with an oppositely oriented rectifier diode, enabling 4 pF total capacitance - the lowest available for a 150 W-rated device. Its hard-glass hermetic seal and tungsten slug construction provide robust thermal dissipation and radiation hardness per MicroNote 050.
The device operates across –55 °C to +175 °C junction temperature, supports IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity levels, and maintains stable V(BR) with αV(BR) = 0.099 %/°C. Standby leakage is ≤0.5 µA at 34.2 V VWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 34.2 V - Maximum continuous reverse voltage before conduction; defines operating margin for protected line. |
| VC @ IPP | 49.9 V at 3.01 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on downstream IC. |
| PPP | 150 W - Peak pulse power handling capability; enables robust protection against lightning-induced transients. |
| CT | 4 pF - Total terminal capacitance; preserves signal integrity in >100 MHz data lines (e.g., RS-485, USB 2.0). |
| TJ Range | –55 °C to +175 °C - Wide operational junction temperature range; supports aerospace, downhole, and military environments. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires adequate PCB copper area for sustained 1 W average power. |
| αV(BR) | 0.099 %/°C - Low temperature coefficient of breakdown voltage; ensures stable clamping across temperature extremes. |
Pinout & Package
MQ1N8164US/TR is housed in a hermetically sealed voidless hard-glass axial-leaded package with cathode band marking. Terminals are tin/lead or RoHS-compliant matte tin-plated copper leads. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during positive surge | Connected to protected line; conducts when voltage exceeds VWM in forward direction relative to cathode. |
| Cathode | Transient current exit point during positive surge | Marked by band; ties to system ground or common reference; defines unidirectional clamping polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Series-diode low-C architecture | 4 pF capacitance achieved via integrated anti-parallel rectifier, enabling RF/data-line compatibility without bandwidth loss. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space and defense systems per MIL-STD-750. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal voids, ensuring long-term parameter stability under thermal cycling and humidity stress. |
| Triple-layer passivation | Enhanced surface insulation prevents leakage path formation and improves long-term reliability in harsh environmental exposure. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050; suitable for satellite, avionics, and nuclear instrumentation. |
Applications
| Telecom Line Protection | Industrial RS-485 Interface |
|---|---|
Use Scenario: Protecting T1/E1 line drivers and receivers from induced surges and ESD events in central office and remote terminal equipment. IC Role / Device Role / Timing Role: Unidirectional clamping element placed between differential pair and transceiver IC input pins. Use Value: 4 pF capacitance avoids signal distortion at 2.048 MHz framing rates; 49.9 V VC limits stress on ±12 V RS-422/485 transceivers. | Use Scenario: Safeguarding multi-drop RS-485 bus nodes in factory automation PLCs exposed to motor switching noise and ground potential differences. IC Role / Device Role / Timing Role: Primary transient shunt on A/B bus lines referenced to local ground plane. Use Value: 150 W PPP rating handles repetitive 1 kV/500 A surges per IEC61000-4-4; –55 °C to +175 °C operation supports extended industrial temperature range. |
| Military Data Link Protection | Aerospace Avionics Signal Conditioning |
Use Scenario: Hardening MIL-STD-1553B data bus stubs against ESD and lightning-induced transients in airborne vehicle subsystems. IC Role / Device Role / Timing Role: Point-of-entry protection on bus coupling transformers and receiver inputs. Use Value: Category 1 bond and hermetic seal ensure zero failure-in-field under MIL-STD-810H vibration/shock; 0.5 µA ID minimizes standby loading on 27 V supply rails. | Use Scenario: Protecting analog sensor front-ends (e.g., thermocouple, RTD) in flight control computers from static discharge during maintenance and EMI coupling. IC Role / Device Role / Timing Role: Low-leakage transient clamp on low-current signal paths prior to instrumentation amplifier inputs. Use Value: 4 pF CT prevents phase shift in <10 kHz sensor signals; radiation hardness eliminates need for shielding or derating in LEO orbits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ33A | Surface-mount DO-214AB package; 33 V VWM; 53.3 V VC @ 4.3 A; 170 W PPP; 100 pF CT. | Higher capacitance limits use in >10 MHz circuits; SMT footprint reduces board space but lowers thermal mass. | Select for cost-sensitive commercial designs where 100 pF capacitance is acceptable and reflow assembly is preferred. |
| 1N6105A | Axial-leaded glass package; 33 V VWM; 53.3 V VC @ 4.3 A; 150 W PPP; 100 pF CT; non-hermetic construction. | Lacks Category 1 bond and voidless seal; not rated for radiation or extended temperature operation. | Choose for legacy industrial replacements where reliability requirements are less stringent than MQ1N8164US/TR. |
Compared with SMCJ33A and 1N6105A, MQ1N8164US/TR delivers uniquely low 4 pF capacitance and hermetic reliability for high-frequency, high-integrity systems-making it irreplaceable where signal fidelity and mission-critical uptime are mandatory.
Availability
MQ1N8164US/TR is available at Aetrix Electronics and suitable for telecom line protection, industrial RS-485 interface hardening, and military data link safeguarding requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for MQ1N8164US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The MQ1N8164US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for ultra-low-capacitance transient suppression in mission-critical communication and control systems where failure is not an option.
FAQ
What is the working standoff voltage (VWM) of MQ1N8164US/TR?
The MQ1N8164US/TR has a working standoff voltage (VWM) of 34.2 V, meaning it remains non-conductive up to this DC or repetitive peak reverse voltage. This value is specified at 25 °C and ensures reliable operation in 24–36 V nominal systems such as industrial RS-485 buses and telecom line cards. The MQ1N8164US/TR maintains this rating across its full –55 °C to +175 °C junction temperature range with minimal drift.
Does MQ1N8164US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MQ1N8164US/TR provides ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4, as confirmed in Microsemi's official documentation. Its 4 pF capacitance and 150 W peak pulse power enable effective clamping of ±8 kV contact and ±15 kV air-gap ESD discharges while limiting coupled energy into sensitive receivers. The MQ1N8164US/TR achieves this without compromising signal integrity in high-speed data paths.
What is the clamping voltage (VC) of MQ1N8164US/TR at its rated surge current?
The MQ1N8164US/TR exhibits a maximum clamping voltage (VC) of 49.9 V at 3.01 A peak impulse current (IPP) for the standard 10/1000 µs waveform. This VC value defines the upper voltage limit imposed on protected circuitry during surge events. The MQ1N8164US/TR achieves this performance while maintaining only 4 pF capacitance - significantly lower than conventional TVS devices - making it ideal for preserving timing margins in high-frequency interfaces.
Is MQ1N8164US/TR suitable for aerospace applications?
Yes, MQ1N8164US/TR is explicitly designed for aerospace use: it features Category 1 internal metallurgical bonds, voidless hermetic glass packaging, inherent radiation hardness per MicroNote 050, and operation from –55 °C to +175 °C. These attributes make MQ1N8164US/TR appropriate for avionics signal conditioning, satellite telemetry links, and flight control subsystems where zero field failure is required and environmental stresses are extreme.
What package type and lead finish does MQ1N8164US/TR use?
MQ1N8164US/TR uses an axial-leaded hermetically sealed hard-glass package with cathode band polarity marking. Its leads are plated with either tin/lead or RoHS-compliant matte tin over copper, supporting both legacy and modern assembly processes. The package dimensions are BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", and LL = 0.800–1.300". This form factor enables robust through-hole mounting in high-vibration environments. The MQ1N8164US/TR package is distinct from surface-mount alternatives and optimized for thermal and mechanical reliability.
MQ1N8164US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 3.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8164US/TR FAQ
1.How can I place an order for MQ1N8164US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8164US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8164US/TR reliable?
The price and inventory of MQ1N8164US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8164US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8164US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8164US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8164US/TR?
MQ1N8164US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8164US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8164US/TR?
For technical support, including MQ1N8164US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8164US/TR requirements.
6.How does Aetrix verify that MQ1N8164US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8164US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8164US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8164US/TR?
All MQ1N8164US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8164US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8164US/TR part is unused and in its original packaging.
Return procedure for MQ1N8164US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8164US/TR Tags
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