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Microchip Technology MQ1N8167US/TR
- Part No.:
- MQ1N8167US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8167US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,418
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Product details
Overview
MQ1N8167US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 40.0 V working standoff voltage (VWM), 4 pF capacitance, and clamps transients to ≤64.6 V at 300 A IPP - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750-compliant systems.
For engineers reviewing the MQ1N8167US/TR datasheet, MQ1N8167US/TR pinout, MQ1N8167US/TR application, or MQ1N8167US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4/4-5 and MIL-STD-750 Method 1020.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic package incorporates tungsten slugs and internal Category 1 metallurgical bonds for radiation hardness and thermal robustness up to +175 °C junction temperature.
The device operates with 40.0 V working standoff voltage (VWM), 44.7 V minimum breakdown voltage (V(BR)) at 1 mA, and clamps to 64.6 V maximum at 300 A peak impulse current (IPP). It supports steady-state power dissipation of 1.0 W at 25 °C ambient and exhibits a temperature coefficient of breakdown voltage of 0.101 %/°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40.0 V - Maximum continuous reverse voltage before conduction begins; sets operating margin for protected signal lines. |
| V(BR) min | 44.7 V at 1 mA - Ensures reliable turn-on above system operating voltage with defined margin. |
| VC max | 64.6 V at IPP = 300 A - Clamping voltage limits downstream IC stress during lightning or ESD events. |
| CT | 4 pF - Enables use in >1 GHz RF/data lines without signal integrity degradation. |
| PPP | 150 W at 10/1000 µs - Sustains high-energy transients common in avionics and industrial control interfaces. |
| TJ range | –55 to +175 °C - Supports operation in extreme environments including space-grade and engine-bay applications. |
| RθJA | 150 °C/W - Requires minimal PCB copper area for thermal management in compact layouts. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass axial-leaded package with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected line in unidirectional clamp configuration. | Accepts surge current during reverse-transient clamping; must be routed with low-inductance trace to ground reference. |
| Cathode | Negative terminal; marked by band on glass body; connected to system ground or low-impedance return path. | Serves as clamping reference node; requires direct connection to chassis or power plane ground to minimize voltage overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in humid or vacuum environments. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/530 requirements for high-reliability semiconductor interconnects. |
| Triple-layer passivation | Prevents surface leakage and enhances stability under ionizing radiation exposure. |
| Low 4 pF capacitance | Preserves signal rise time and bandwidth in high-speed serial links (e.g., RS-422, ARINC 429). |
| Nonsensitive to ESD | Withstands handling per MIL-STD-750 Method 1020 without parameter shift or failure. |
Applications
| Aerospace Data Bus Protection | Military Radio Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential receivers from induced lightning transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS placed at connector interface to clamp common-mode surges before signal conditioning circuitry. Use Value: 4 pF capacitance avoids skew or attenuation of 1 MHz–2 MHz data signals; 150 W rating handles IEC61000-4-5 Level 4 coupling. | Use Scenario: Shielding HF/VHF transceiver antenna input stages from ESD and nearby EMP pulses in field-deployable radios. IC Role / Device Role / Timing Role: Primary transient suppressor mounted directly at SMA connector feedthrough to minimize lead inductance. Use Value: 64.6 V clamping ensures LNA input stays below absolute maximum ratings; hermetic seal prevents corrosion in coastal/humid deployments. |
| Satellite Command Link Interface | Industrial PLC Serial Port |
Use Scenario: Safeguarding S-band telemetry downlink receivers against single-event transients in low-earth orbit missions. IC Role / Device Role / Timing Role: Radiation-hardened TVS on RF signal path between antenna filter and downconverter input. Use Value: Inherent radiation tolerance (MicroNote 050) eliminates need for shielding mass; –55 to +175 °C operation covers orbital thermal cycling. | Use Scenario: Protecting RS-232/RS-485 ports on programmable logic controllers exposed to factory floor EFT noise and ground loop surges. IC Role / Device Role / Timing Role: Standoff-voltage-matched TVS on each data line, referenced to isolated digital ground. Use Value: 40.0 V VWM aligns with ±25 V RS-485 common-mode range; 300 A IPP withstands repetitive 4 kV EFT bursts per IEC61000-4-4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ40A | Surface-mount DO-214AB package; 65.5 V VC at 32.4 A; 22 pF capacitance; 1500 W PPP rating. | Higher clamping voltage and capacitance; suited for lower-frequency power rail protection, not RF/data lines. | Select when board space is constrained and signal bandwidth < 100 MHz; avoid for high-speed serial interfaces. |
| 1N6105A | Axial-leaded glass package; 43.0 V VWM; 69.4 V VC at 217 A; 150 W PPP; no Category 1 bond or radiation hardening. | Lacks hermetic seal and metallurgical bond certification; rated only to +150 °C junction temperature. | Acceptable for commercial-grade industrial use where radiation or extended temperature is not required. |
Compared with SMCJ40A and 1N6105A, MQ1N8167US/TR uniquely combines 4 pF capacitance, hermetic reliability, and Category 1 bonding - making it irreplaceable for high-frequency, mission-critical aerospace and defense signal protection where parameter stability and survivability are non-negotiable.
Availability
MQ1N8167US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, military radio front-end design, satellite command link interface, and industrial PLC serial port applications requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8167US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The 1N8149–1N8182 family was engineered specifically for ultra-low-capacitance transient suppression in high-frequency, high-reliability signal paths - emphasizing hermetic sealing, metallurgical bond integrity, and compliance with MIL-STD and IEC immunity standards.
FAQ
What is the clamping voltage of MQ1N8167US/TR at its rated peak impulse current?
The MQ1N8167US/TR has a maximum clamping voltage (VC) of 64.6 V when subjected to its rated peak impulse current (IPP) of 300 A under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during surge events. The MQ1N8167US/TR maintains this clamping performance across its full operating temperature range due to its stable avalanche characteristics and hermetic construction.
Is MQ1N8167US/TR suitable for bidirectional transient protection?
No, MQ1N8167US/TR is a unidirectional TVS diode. For bidirectional protection, two MQ1N8167US/TR devices must be connected in anti-parallel configuration, as shown in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but provides symmetrical clamping for AC-coupled or differential signal lines such as RS-422 or CAN. The MQ1N8167US/TR itself conducts only in reverse breakdown and blocks forward current above its VWM.
Does MQ1N8167US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MQ1N8167US/TR is explicitly rated for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its low 4 pF capacitance and fast response time enable effective suppression of 8 kV contact and 15 kV air-gap ESD discharges, while its 150 W peak pulse power rating supports repeated 4 kV EFT bursts. These capabilities are validated in Microsemi's characterization and referenced in the Applications/Benefits section of the T4-LDS-xxxx datasheet.
What is the meaning of "MQ" in MQ1N8167US/TR?
The "MQ" prefix in MQ1N8167US/TR denotes JAN-level reliability qualification per MIL-PRF-19500, indicating that the device meets enhanced screening, testing, and traceability requirements for military and aerospace applications. It signifies compliance with Category 1 internal metallurgical bonds, hermetic sealing verification, and extended temperature operation - distinguishing it from commercial-grade variants like 1N8167US/TR without the "MQ" prefix.
Can MQ1N8167US/TR be used in surface-mount designs?
No, MQ1N8167US/TR is an axial-leaded through-hole device in a hard-glass package and is not compatible with surface-mount assembly processes. It requires hole mounting and wave or hand soldering. For surface-mount equivalents with similar electrical performance, consider Microsemi's USM-type MELF packages (e.g., 1N8167US in "A" MELF), but note that MQ1N8167US/TR itself is only offered in axial-leaded form per the T4-LDS-xxxx datasheet mechanical drawings and nomenclature table.
MQ1N8167US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.6V
- Current - Peak Pulse (10/1000µs):
- 2.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8167US/TR FAQ
1.How can I place an order for MQ1N8167US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8167US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8167US/TR reliable?
The price and inventory of MQ1N8167US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8167US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8167US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8167US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8167US/TR?
MQ1N8167US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8167US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8167US/TR?
For technical support, including MQ1N8167US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8167US/TR requirements.
6.How does Aetrix verify that MQ1N8167US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8167US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8167US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8167US/TR?
All MQ1N8167US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8167US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8167US/TR part is unused and in its original packaging.
Return procedure for MQ1N8167US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8167US/TR Tags
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