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Microchip Technology MQ1N8168US/TR
- Part No.:
- MQ1N8168US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8168US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,464
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Product details
Overview
MQ1N8168US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 48.5 V minimum breakdown voltage (V(BR)), 43.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, data lines, and aerospace avionics interfaces.
For engineers reviewing the MQ1N8168US/TR datasheet, MQ1N8168US/TR pinout, MQ1N8168US/TR application, or MQ1N8168US/TR equivalent, key selection criteria include its Category 1 metallurgical bond reliability, axial-leaded hard-glass package, low clamping voltage (70.1 V at 2.14 A), and IEC61000-4-2/4-4 compliance without compromising signal integrity in >1 GHz paths.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - among the lowest for 150 W-rated devices. Its hermetically sealed voidless glass construction ensures stable performance across -55°C to +175°C junction temperature range.
The device operates as a unidirectional clamp with cathode-band polarity, requiring correct orientation in series with protected signal lines. It achieves 70.1 V clamping voltage (VC) at 2.14 A peak impulse current (IPP), delivering robust secondary lightning protection per IEC61000-4-5 Level 3 when used with appropriate series impedance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43.0 V - maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA; sets upper limit for DC-coupled signal rail protection. |
| V(BR) min | 48.5 V - guaranteed avalanche onset at 1 mA test current; ensures predictable turn-on margin above VWM. |
| VC @ IPP | 70.1 V at 2.14 A - clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| CT | 4 pF - total terminal capacitance at 0 V; enables minimal signal distortion in USB 3.0, PCIe Gen2, or RF antenna switch paths. |
| PPP | 150 W - peak pulse power rating at 25°C; supports repeated transients up to 0.01% duty cycle without thermal runaway. |
| TJ Range | -55°C to +175°C - qualified operating junction temperature; suitable for engine control units and downhole electronics. |
| RθJA | 150°C/W - thermal resistance from junction to ambient; requires PCB copper pour or heatsinking for sustained surge duty. |
Pinout & Package
Package: Axial-leaded voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input side of protected line | Connected to signal source or upstream trace; must be placed before sensitive IC input. |
| Cathode | Clamp return path | Connected to ground or low-impedance return plane; cathode band identifies this terminal visually. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for MIL-PRF-19500/513 and space-grade reliability; eliminates interfacial delamination under thermal cycling. |
| Triple-layer passivation | Hermetic glass encapsulation with three dielectric layers prevents moisture ingress and surface conduction paths in humid environments. |
| Low capacitance architecture | Series rectifier + TVS topology reduces CT to 4 pF - critical for preserving signal rise time in >500 MHz applications. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050; validated for TID >100 krad(Si) and SEL immunity in LEO missions. |
| ESD immunity | Nonsensitive to ESD per MIL-STD-750 Method 1020; withstands >30 kV HBM without parameter shift or catastrophic failure. |
Applications
| RF Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA inputs and antenna switch control lines in S-band radar transceivers against induced surges and ESD events. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at connector entry point, before matching network. Use Value: 4 pF capacitance avoids detuning of 2.4–3.5 GHz matching networks; 70.1 V clamping preserves LNA input stage integrity during MIL-STD-461G CS115 pulses. | Use Scenario: Safeguarding ARINC 429 receiver inputs on flight control computers exposed to lightning-induced transients. IC Role / Device Role / Timing Role: Standoff-clamp TVS on differential receive pair, referenced to chassis ground via low-inductance path. Use Value: 150 W PPP rating handles IEC61000-4-5 Level 3 (2 Ω/12 Ω coupling) surges; -55°C to +175°C operation supports extended temperature qualification. |
| Industrial Ethernet PHY Protection | Downhole Telemetry Interface |
Use Scenario: Securing 100BASE-TX transformer-coupled PHY lines in oilfield SCADA gateways subjected to long cable runs and ground potential differences. IC Role / Device Role / Timing Role: Unidirectional TVS on each twisted pair, mounted adjacent to RJ45 magnetics. Use Value: 43.0 V VWM aligns with 5 V PHY supply rails; 4 pF minimizes jitter accumulation in 125 MHz symbol timing. | Use Scenario: Protecting RS-485 transceivers in borehole pressure/temperature sensors operating at 175°C ambient in deep-well drilling tools. IC Role / Device Role / Timing Role: Primary transient clamp on isolated data lines, mounted directly on sensor module PCB. Use Value: Hermetic glass package prevents seal degradation at 175°C; Category 1 bond ensures mechanical stability under 20 g RMS vibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ43A | Surface-mount DO-214AB package; 65.8 V VC @ 2.28 A; 170 pF capacitance. | Lacks low-capacitance capability; unsuitable for RF or high-speed digital lines. | Select only for cost-sensitive industrial controls where layout space is constrained and frequency response <10 MHz. |
| 1N8168US | Same die, non-RoHS version; identical electrical specs and glass package; lead-tin plating instead of matte tin. | No functional difference; not compliant with EU RoHS Directive 2011/65/EU. | Choose only for legacy military programs requiring JAN-specification components with SnPb terminations. |
Compared with SMCJ43A and 1N8168US, MQ1N8168US/TR uniquely combines 4 pF capacitance, hermetic reliability, and RoHS compliance - making it the sole option for high-frequency, high-reliability designs where signal fidelity and long-term field stability are non-negotiable.
Availability
MQ1N8168US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus interface, and downhole telemetry requiring stable component supply across extended temperature and radiation environments.
Supply support for MQ1N8168US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened devices, and precision timing solutions.
The 1N81xx series was developed for mission-critical transient suppression in aerospace, defense, and industrial systems where failure is not an option - emphasizing hermetic sealing, Category 1 bonds, and ultra-low capacitance for signal-integrity-critical interfaces.
FAQ
What is the clamping voltage of MQ1N8168US/TR at its rated peak impulse current?
The MQ1N8168US/TR has a maximum clamping voltage (VC) of 70.1 V when subjected to its rated peak impulse current (IPP) of 2.14 A under the standard 10/1000 µs waveform. This value is measured at 25°C ambient and defines the upper voltage limit imposed on protected circuitry during surge events. The MQ1N8168US/TR maintains this clamping performance across its full operating temperature range due to its stable avalanche characteristics and hermetic construction.
Is MQ1N8168US/TR suitable for bidirectional transient protection?
No, MQ1N8168US/TR is a unidirectional TVS diode with cathode-band polarity. For bidirectional protection, two MQ1N8168US/TR devices must be connected in anti-parallel configuration - resulting in double the capacitance (8 pF) but maintaining the same VWM and clamping behavior in both directions. This configuration is explicitly documented in Microsemi's Figure 5 and is commonly used in AC-coupled or differential signal paths where polarity reversal occurs.
What does the "MQ" prefix signify in MQ1N8168US/TR?
The "MQ" prefix in MQ1N8168US/TR indicates JAN-level reliability qualification per MIL-PRF-19500, referencing the military specification for semiconductor devices. It denotes that the MQ1N8168US/TR is screened to higher reliability standards than commercial-grade parts, including extended temperature testing, burn-in, and lot acceptance testing. This prefix distinguishes it from non-MQ variants like 1N8168US, which lack the same level of screening and documentation traceability.
How does the 4 pF capacitance of MQ1N8168US/TR compare to standard TVS diodes?
The 4 pF capacitance of MQ1N8168US/TR is exceptionally low compared to typical unidirectional TVS diodes - which often range from 100 pF to over 1 nF. This ultra-low value is achieved through a proprietary series rectifier + TVS architecture, minimizing signal distortion in high-frequency applications such as RF front-ends, high-speed data links, and microwave receivers. Standard TVS devices cannot match this capacitance without sacrificing peak pulse power or reliability.
Does MQ1N8168US/TR meet IEC61000-4-2 and IEC61000-4-4 compliance?
Yes, MQ1N8168US/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its low clamping voltage, fast response time (<1 ns), and robust junction design enable it to safely divert 8 kV contact and 15 kV air discharge ESD events while limiting voltage overshoot to ≤70.1 V. These capabilities are validated in Microsemi's characterization reports and supported by its Category 1 metallurgical bond and triple-layer passivation.
MQ1N8168US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 2.14A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8168US/TR FAQ
1.How can I place an order for MQ1N8168US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8168US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8168US/TR reliable?
The price and inventory of MQ1N8168US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8168US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8168US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8168US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8168US/TR?
MQ1N8168US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8168US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8168US/TR?
For technical support, including MQ1N8168US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8168US/TR requirements.
6.How does Aetrix verify that MQ1N8168US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8168US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8168US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8168US/TR?
All MQ1N8168US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8168US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8168US/TR part is unused and in its original packaging.
Return procedure for MQ1N8168US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8168US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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