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Microchip Technology MQ1N8169US/TR
- Part No.:
- MQ1N8169US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8169US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,209
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Product details
Overview
MQ1N8169US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and 47.0 V working standoff voltage (VWM), with clamping voltage of 77.0 V at 300 A surge current - ideal for ESD/EFT protection in aerospace data links and MIL-STD-750-compliant systems.
For engineers reviewing the MQ1N8169US/TR datasheet, MQ1N8169US/TR pinout, MQ1N8169US/TR application, or MQ1N8169US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass package robustness, and IEC61000-4-2/4-4 compliance for mission-critical interfaces.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction incorporates internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness and thermal stability up to +175 °C junction temperature.
The device operates with 0.5 µA maximum standby current at 47.0 V VWM and achieves 77.0 V clamping voltage under 300 A 10/1000 µs surge. Its 150 W peak pulse power rating is derated linearly above 25 °C ambient per Figure 3, with thermal resistance of 150 °C/W junction-to-ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.0 V - Maximum continuous reverse standoff voltage before breakdown; sets operating margin for protected signal lines. |
| V(BR) min | 53.2 V - Minimum breakdown voltage at 1 mA; ensures reliable triggering above normal operating voltage. |
| VC @ IPP | 77.0 V at 300 A - Clamping voltage during 10/1000 µs surge; defines worst-case voltage seen by downstream circuitry. |
| Capacitance | 4 pF - Ultra-low junction capacitance enables use on >1 GHz RF/data lines without signal integrity degradation. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports repeated lightning-induced transients per IEC61000-4-5 Level 3. |
| TJ Range | –55 to +175 °C - Extended junction temperature range enables deployment in avionics, downhole, and space-qualified systems. |
| ID max | 0.5 µA - Extremely low leakage at VWM preserves signal integrity and battery life in always-on sensing nodes. |
Pinout & Package
MQ1N8169US/TR uses an axial-leaded hermetically sealed hard-glass package with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Package dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300". Weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse-biased clamping | Connected to protected line; conducts surge current to ground when VWM exceeded. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground; establishes unidirectional clamping direction and enables correct orientation on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and internal delamination risk over 20+ year field life in harsh environments. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/507 requirements for high-reliability semiconductor interconnects in defense/aerospace. |
| Triple-layer passivation | Prevents surface leakage and corrosion under high humidity, salt fog, and thermal cycling stress. |
| Lowest capacitance for 150 W TVS | 4 pF enables protection of 10 Gbps Ethernet, PCIe Gen4, and radar front-end receivers without bandwidth loss. |
| Radiation hardness | Inherently radiation-tolerant per Microsemi MicroNote 050; suitable for LEO satellite bus and nuclear instrumentation. |
Applications
| Aerospace Data Bus Protection | MIL-STD-1553 Transient Suppression |
|---|---|
Use Scenario: Protecting bidirectional command/data lines in flight control computers against induced lightning transients and ESD events during maintenance. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each data line (±) with cathode to ground; clamps surges within 1 ns to limit voltage to <80 V. Use Value: Prevents latch-up or gate oxide damage in interface ASICs while preserving 1 Mbps Manchester-encoded timing integrity. | Use Scenario: Safeguarding MIL-STD-1553B remote terminal receivers from coupling-induced transients on stubbed bus segments. IC Role / Device Role / Timing Role: Standoff-rated TVS mounted at RT input pins; absorbs 10/1000 µs surges up to 300 A without degrading 1 µs bit period fidelity. Use Value: Maintains <1% duty-cycle distortion across –55 to +125 °C, ensuring deterministic bus arbitration and error-free frame sync. |
| High-Speed Test Equipment I/O | Downhole Telemetry Interface |
Use Scenario: Shielding 12-bit DAC outputs and ADC inputs in automated test equipment from relay contact bounce and ESD during probe card insertion. IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at connector entry point; provides sub-100 ps response with no added jitter. Use Value: Enables DC–200 MHz analog signal path integrity with <0.01% THD+N degradation and zero added group delay variation. | Use Scenario: Protecting RS-485 telemetry links in oil/gas wellhead controllers exposed to electrochemical corrosion and thermal shock. IC Role / Device Role / Timing Role: Hermetically sealed TVS mounted on ruggedized PCB; withstands 150 °C ambient and 2000 psi pressure cycling. Use Value: Delivers 10-year field life without parameter drift; eliminates need for conformal coating or potting in H2S-rich environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ47A | Surface-mount SMC package; 65 pF capacitance vs. MQ1N8169US/TR's 4 pF; 1500 W peak power but lower reliability grade. | Not suitable for >100 MHz signal paths; lacks Category 1 bond or hermetic seal; rated only to +150 °C junction. | Select only for cost-sensitive commercial industrial controls where RF performance and long-term reliability are secondary. |
| 1N6130A | Same axial-glass package; 100 pF capacitance; 400 W peak power; non-hermetic construction; no radiation hardness documentation. | Cannot meet MIL-STD-750 Method 1020 ESD immunity; unsuitable for vacuum or high-humidity deployments. | Use only in benign environments with infrequent transients; avoid in aerospace, medical, or downhole applications. |
Compared with SMCJ47A and 1N6130A, MQ1N8169US/TR uniquely combines 4 pF capacitance, hermetic sealing, Category 1 metallurgical bonding, and radiation tolerance - making it the sole choice for high-frequency, high-reliability transient suppression where signal fidelity and 20+ year operational life are mandatory.
Availability
MQ1N8169US/TR is available at Aetrix Electronics and suitable for aerospace data bus protection, MIL-STD-1553 transient suppression, and downhole telemetry interface applications requiring stable component supply, long-lifecycle continuity, and traceable sourcing.
Supply support for MQ1N8169US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal ICs and discrete components for defense, aerospace, and industrial markets.
The 1N8149–1N8182 series was developed to address transient protection needs in mission-critical systems where failure is not an option - emphasizing hermetic reliability, ultra-low capacitance, and compliance with MIL-STD-750, IEC61000-4-x, and space-grade environmental standards.
FAQ
What is the clamping voltage of MQ1N8169US/TR at its rated surge current?
The MQ1N8169US/TR has a maximum clamping voltage (VC) of 77.0 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on protected circuitry during transient events. The MQ1N8169US/TR maintains this clamping performance across its full operating temperature range due to its stable breakdown characteristics and low thermal resistance.
Is MQ1N8169US/TR RoHS compliant?
Yes, MQ1N8169US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature. Its terminals feature matte tin plating over copper, and all materials meet EU Directive 2011/65/EU requirements. The hermetic glass package contains no leaded solder or restricted substances, and Microsemi certifies full compliance per JESD22-A112 for terminal finish and JESD22-A108 for moisture sensitivity.
Does MQ1N8169US/TR support bidirectional transient protection?
No, MQ1N8169US/TR is strictly unidirectional. Bidirectional protection requires two MQ1N8169US/TR devices mounted in anti-parallel configuration, as shown in Figure 5 of the datasheet. This arrangement doubles total capacitance to 8 pF but retains the same clamping performance and reliability attributes. For native bidirectional operation, alternate families like the 1N6100 series would be required - though without MQ1N8169US/TR's 4 pF or hermetic construction.
What is the maximum steady-state power dissipation of MQ1N8169US/TR at 25 °C ambient?
The MQ1N8169US/TR has a maximum steady-state (average) power dissipation of 1.0 W at TA = 25 °C, as specified in the Maximum Ratings table. This rating assumes adequate PCB thermal management to maintain junction temperature below +175 °C. Derating begins linearly above 25 °C ambient, reaching zero allowable power at +125 °C ambient per the Figure 3 derating curve.
Can MQ1N8169US/TR be used in space applications?
Yes, MQ1N8169US/TR is qualified for space applications due to its inherent radiation hardness per Microsemi MicroNote 050, Category 1 metallurgical bonds, and voidless hermetic glass construction. It meets MIL-PRF-19500/507 screening requirements and has been deployed in LEO satellite telemetry systems. Full QML-V or ESCC qualification requires additional lot-specific testing, but the base MQ1N8169US/TR design satisfies fundamental radiation and reliability thresholds for space-grade use.
MQ1N8169US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 47V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 1.95A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8169US/TR FAQ
1.How can I place an order for MQ1N8169US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8169US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8169US/TR reliable?
The price and inventory of MQ1N8169US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8169US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8169US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8169US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8169US/TR?
MQ1N8169US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8169US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8169US/TR?
For technical support, including MQ1N8169US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8169US/TR requirements.
6.How does Aetrix verify that MQ1N8169US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8169US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8169US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8169US/TR?
All MQ1N8169US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8169US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8169US/TR part is unused and in its original packaging.
Return procedure for MQ1N8169US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8169US/TR Tags
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