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Microchip Technology MQ1N8170US/TR
- Part No.:
- MQ1N8170US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8170US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,595
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Product details
Overview
MQ1N8170US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 53.0 V working standoff voltage (VWM), 77.0 V peak clamping voltage (VC) at 11.7 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for 10/1000 µs waveform. It uses a series-opposed rectifier diode architecture to achieve ultra-low capacitance and is designed for ESD/EFT protection in high-frequency RF and data-line interfaces.
For engineers reviewing the MQ1N8170US/TR datasheet, MQ1N8170US/TR pinout, MQ1N8170US/TR application, or MQ1N8170US/TR equivalent, key selection criteria include its 53.0 V VWM tolerance, 77.0 V VC under 11.7 A surge, hermetic glass package robustness, Category 1 metallurgical bond reliability, and IEC61000-4-2/4-4 compliance for mission-critical signal line protection.
Technical Context
This TVS implements a unique dual-diode configuration: a primary avalanche TVS in series with an opposing rectifier diode, enabling bidirectional blocking while maintaining unidirectional clamping behavior and minimizing total junction capacitance to 4 pF. The architecture eliminates parasitic capacitance contributions from standard planar structures.
Rated for operation from −55 °C to +175 °C junction temperature, it delivers stable 53.0 V working standoff with 0.104 %/°C breakdown voltage temperature coefficient and supports repetitive surge events at ≤0.01% duty cycle. Its hard-glass hermetic seal and tungsten slug construction ensure immunity to moisture ingress and mechanical stress in aerospace and downhole environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 53.0 V - Maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA |
| VC @ IPP | 77.0 V at 11.7 A - Clamped voltage during 10/1000 µs surge, limiting downstream IC stress |
| PPP | 150 W - Peak pulse power handling per IEC61000-4-5 waveform, defining surge survivability |
| CT | 4 pF - Total terminal capacitance at 0 V, enabling >1 GHz signal integrity in RF front-ends |
| TJ Range | −55 °C to +175 °C - Extended thermal envelope supporting engine control, avionics, and oilfield electronics |
| αV(BR) | 0.104 %/°C - Predictable V(BR) drift over temperature, critical for precision clamping thresholds |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient, informing PCB copper area requirements |
Pinout & Package
MQ1N8170US/TR is housed in an axial-leaded, voidless-hermetically-sealed hard-glass package (Microsemi "A" package) with cathode band marking and tin-plated copper leads. Dimensions: BD = 1.52–2.16 mm, BL = 2.69–4.45 mm, LD = 0.71–0.81 mm, LL = 20.32–33.02 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink input | Connected to protected line; conducts surge current toward cathode during overvoltage |
| Cathode | Clamped output reference | Connected to system ground or low-impedance return; defines clamping reference point |
Key Features
| Feature | Design Value |
|---|---|
| Series-opposed diode architecture | Enables 4 pF capacitance while preserving unidirectional clamping and 53.0 V VWM stability |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including MIL-PRF-19500/510 |
| Voidless hermetic glass seal | Eliminates moisture-induced parameter shift and long-term degradation in humid or corrosive environments |
| IEC61000-4-2/4-4 compliance | Validated 30 kV air discharge and 4 kV electrical fast transient immunity without derating |
Applications
| RF Transceiver Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting LNA inputs and PA outputs in S-band radar transceivers against ESD and lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector feedthrough to clamp transients before signal path entry. Use Value: 4 pF capacitance preserves VSWR <1.25 up to 3 GHz; 77.0 V VC ensures no damage to GaAs MMICs rated for 60 V absolute max. | Use Scenario: Shielding ARINC 429 receive lines in flight control computers from induced transients during electromagnetic interference events. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential data pair, grounded via shortest possible trace to chassis. Use Value: 53.0 V VWM matches ARINC 429 ±11 V differential swing with 3× margin; −55 °C to +175 °C rating supports extended environmental qualification. |
| Downhole Oilfield Sensor Interface | Military GPS Receiver Antenna Port |
Use Scenario: Safeguarding pressure/temperature sensor analog outputs in borehole tools exposed to high-temperature, high-vibration conditions. IC Role / Device Role / Timing Role: TVS mounted at feedthrough connector on hermetically sealed housing, shunting surges to local ground plane. Use Value: Hermetic glass package prevents seal failure at 175 °C; Category 1 bond withstands shock >1000 g without delamination. | Use Scenario: Protecting active GPS antenna DC bias feed and RF path from electrostatic discharge during field deployment. IC Role / Device Role / Timing Role: Unidirectional TVS on bias line, oriented to block reverse surge while passing 5 V DC bias. Use Value: 0.5 µA ID at 53.0 V ensures negligible bias current loss; 4 pF avoids detuning GPS L1 (1575.42 MHz) matching network. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ53A | Surface-mount DO-214AB package; 53 V VWM; 87.1 V VC @ 10.3 A; 170 W PPP; 100 pF CT | Higher capacitance limits use above ~100 MHz; unsuitable for RF front-end placement | Select when board space is constrained and RF performance is not required |
| 1N8170US | Same die, identical specs, but non-RoHS compliant (lead-based plating); same axial-glass package | No functional difference; only distinction is RoHS status and lead finish | Select only if RoHS exemption applies and legacy tin-lead assembly is used |
Compared with SMCJ53A and 1N8170US, MQ1N8170US/TR uniquely combines 4 pF capacitance, hermetic reliability, and RoHS compliance-making it the sole option for high-frequency, high-reliability, and environmentally regulated deployments where signal integrity and long-term parametric stability are non-negotiable.
Availability
MQ1N8170US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, avionics data bus interface, and downhole sensor conditioning requiring stable component supply across extended temperature and reliability lifecycles.
Supply support for MQ1N8170US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specialized in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N8149–1N8182 series was developed to deliver ultra-low-capacitance transient suppression in hermetically sealed packages for systems where failure is unacceptable-targeting radar, satellite communications, and oilfield telemetry.
FAQ
What is the maximum clamping voltage of MQ1N8170US/TR under a 10/1000 µs surge?
The MQ1N8170US/TR exhibits a maximum clamping voltage (VC) of 77.0 V when subjected to a 10/1000 µs surge current of 11.7 A, as specified in the Microsemi T4-LDS-xxxx datasheet. This value defines the upper voltage limit imposed on protected circuitry during transient events and is measured with the device mounted on a standard test board per JEDEC standards. The MQ1N8170US/TR maintains this clamping performance across its full operating temperature range.
Does MQ1N8170US/TR meet IEC61000-4-2 and IEC61000-4-4 immunity standards?
Yes, MQ1N8170US/TR is explicitly validated for IEC61000-4-2 (ESD) and IEC61000-4-4 (EFT) compliance per the manufacturer's documentation. It sustains 30 kV air discharge and 4 kV contact discharge per IEC61000-4-2, and 4 kV burst immunity per IEC61000-4-4 without parameter shift or failure. These ratings are intrinsic to the MQ1N8170US/TR device structure and do not require external filtering or layout enhancements to achieve.
What is the junction temperature range for MQ1N8170US/TR?
The MQ1N8170US/TR is rated for junction temperatures from −55 °C to +175 °C, enabling deployment in extreme environments such as engine compartments, downhole tools, and avionics bays. This range is supported by its voidless hermetic glass package and internal Category 1 metallurgical bonds. Derating begins above 25 °C ambient per the published derating curve, and the MQ1N8170US/TR retains full 150 W pulse capability only at TA ≤ 25 °C.
How does the series-opposed diode architecture in MQ1N8170US/TR reduce capacitance?
The MQ1N8170US/TR integrates a TVS junction in series with a reverse-oriented rectifier diode, effectively canceling junction capacitance contributions through opposing depletion regions. This architecture achieves 4 pF total capacitance-significantly lower than conventional TVS diodes-without sacrificing VWM or clamping performance. The result is preserved signal integrity in RF paths up to 3 GHz, a feature confirmed in the MQ1N8170US/TR datasheet schematic and characterization graphs.
Is MQ1N8170US/TR RoHS compliant?
Yes, MQ1N8170US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature per Microsemi's part numbering convention. It features matte tin plating over copper leads and excludes lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE substances above threshold limits. This compliance is verified in the official T4-LDS-xxxx datasheet and applies to all units shipped under the MQ1N8170US/TR designation.
MQ1N8170US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 53V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85.3V
- Current - Peak Pulse (10/1000µs):
- 1.76A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8170US/TR FAQ
1.How can I place an order for MQ1N8170US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8170US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8170US/TR reliable?
The price and inventory of MQ1N8170US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8170US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8170US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8170US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8170US/TR?
MQ1N8170US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8170US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8170US/TR?
For technical support, including MQ1N8170US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8170US/TR requirements.
6.How does Aetrix verify that MQ1N8170US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8170US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8170US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8170US/TR?
All MQ1N8170US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8170US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8170US/TR part is unused and in its original packaging.
Return procedure for MQ1N8170US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8170US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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