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Microchip Technology MQ1N8171US/TR
- Part No.:
- MQ1N8171US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8171US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,536
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Product details
Overview
MQ1N8171US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 64.6 V minimum breakdown voltage (V(BR)), 58.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends, aerospace data links, and MIL-STD-750-compliant systems.
For engineers reviewing the MQ1N8171US/TR datasheet, MQ1N8171US/TR pinout, MQ1N8171US/TR application, or MQ1N8171US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (0.5 µA max at VWM), and IEC61000-4-2/4-4 compliance - critical for radiation-hardened and lightning-protected designs.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - among the lowest available for 150 W-rated devices. Its hard-glass construction ensures voidless hermetic sealing and stable performance across –55 °C to +175 °C junction temperature.
The device operates as a unidirectional clamp with 93.7 V maximum clamping voltage (VC) at 300 A IPP, 0.104 %/°C V(BR) temperature coefficient, and 150 °C/W thermal resistance. It supports secondary lightning protection per IEC61000-4-5 and exhibits inherent radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Pulse Power (PPP) | 150 W at 10/1000 µs - sustains high-energy transients without degradation in telecom or avionics interfaces. |
| Working Standoff Voltage (VWM) | 58.0 V - maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA, suitable for 48 V DC power rail protection. |
| Breakdown Voltage (V(BR)) | 64.6 V min at 1 mA - precise avalanche threshold ensures predictable clamping onset in precision analog circuits. |
| Clamping Voltage (VC) | 93.7 V max at 300 A IPP - limits downstream voltage stress during surge events in MIL-STD-1275-compliant systems. |
| Capacitance (CT) | 4 pF at 0 V - enables use on >1 GHz RF lines (e.g., GPS L1, S-band receivers) without signal integrity loss. |
| Surge Current (IPP) | 300 A peak - handles IEC61000-4-5 Level 3 (1 kV/2 Ω) surges with margin in industrial Ethernet PHY protection. |
| Leakage Current (ID) | 0.5 µA max at VWM - minimizes standby power loss in battery-backed telemetry modules. |
Pinout & Package
Package: Axial-leaded, voidless-hermetically-sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased path) | Connected to protected line; conducts during overvoltage to shunt energy to ground. |
| Cathode | Reference terminal (marked with band) | Connected to system ground or common reference; defines polarity for unidirectional clamping. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability aerospace and defense applications per MIL-PRF-19500. |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term bias stress in sealed enclosures. |
| Hermetic glass seal | Eliminates moisture ingress and parameter drift over 20+ year service life in space-grade deployments. |
| Nonsensitive to ESD | Withstands >8 kV HBM per MIL-STD-750 Method 1020 without parameter shift - simplifies handling in cleanrooms. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 - validated for low-earth orbit missions. |
Applications
| Avionics Data Bus Protection | Satellite Telemetry RF Front-End |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients and ESD during ground handling. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between bus line and chassis ground to limit voltage excursion below receiver input absolute maximum rating. Use Value: 4 pF capacitance avoids signal rise-time degradation at 1 Mbps; 93.7 V VC ensures no latch-up in bus transceivers rated to 100 V. |
Use Scenario: Shielding L-band (1–2 GHz) low-noise amplifier inputs on CubeSat payloads from launch-induced ESD and solar flare coupling. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor mounted directly at SMA connector feedthrough to minimize stub inductance. Use Value: 4 pF CT preserves noise figure and gain flatness; hermetic seal prevents outgassing-induced parameter shift in vacuum. |
| Industrial Ethernet PHY Interface | Military Vehicle Power Distribution |
Use Scenario: Safeguarding 100BASE-TX transformer-coupled PHY pins against EFT bursts and capacitive discharge in factory automation controllers. IC Role / Device Role / Timing Role: TVS placed on differential pair after magnetics, referenced to isolated ground plane. Use Value: 0.5 µA ID prevents DC offset accumulation; 150 W PPP handles repetitive 5 kHz EFT bursts per IEC61000-4-4. |
Use Scenario: Clamping load dump spikes (up to 60 V, 100 ms) on 28 V DC distribution buses in armored vehicle electronics. IC Role / Device Role / Timing Role: Primary transient suppressor on main power rail upstream of DC/DC converters and FPGAs. Use Value: 58.0 V VWM matches 28 V nominal + 100% tolerance; 300 A IPP withstands ISO 7637-2 Pulse 5a without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ58A | Surface-mount DO-214AB package; 65.6 V V(BR); 93.6 V VC at 243 A; 170 W PPP; 15 pF CT. | Larger capacitance limits use above 500 MHz; better suited for PCB-space-constrained industrial controls vs. RF systems. | Select when board area is limited and RF bandwidth < 300 MHz; avoid where 4 pF is required for signal fidelity. |
| 1N6377 | Axial-leaded, glass-passivated; 58.0 V VWM; 91.0 V VC at 280 A; 150 W PPP; 10 pF CT; non-hermetic epoxy package. | No hermetic seal or Category 1 bond; not radiation-hard; unsuitable for space or extended-life military platforms. | Acceptable for commercial-grade automotive or test equipment where cost is prioritized over lifetime reliability. |
Compared with SMCJ58A and 1N6377, MQ1N8171US/TR uniquely combines hermeticity, 4 pF capacitance, and radiation hardness - making it irreplaceable in RF-intensive, long-duration, or mission-critical deployments where parameter stability over time and environment is non-negotiable.
Availability
MQ1N8171US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite telemetry RF front-end design, and military vehicle power distribution requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for MQ1N8171US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure ICs for aerospace, defense, and industrial markets.
The MQ1N8171US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for extreme-environment transient suppression where failure is not an option - including spaceflight, nuclear instrumentation, and airborne radar systems.
FAQ
What is the maximum clamping voltage of MQ1N8171US/TR at its rated surge current?
The MQ1N8171US/TR has a maximum clamping voltage (VC) of 93.7 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Microsemi's T4-LDS-xxxx specification and ensures downstream components remain within safe operating voltage limits during surge events. The MQ1N8171US/TR maintains this clamping performance across its full operating temperature range of –55 °C to +175 °C.
Is MQ1N8171US/TR RoHS compliant?
Yes, MQ1N8171US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. Its axial leads feature matte tin plating over copper, meeting EU Directive 2011/65/EU requirements. The hermetic glass package contains no leaded solder or restricted substances, and Microsemi confirms full compliance in its official documentation and distributor listings.
Does MQ1N8171US/TR support bidirectional transient protection?
No, MQ1N8171US/TR is strictly unidirectional. Bidirectional protection requires two MQ1N8171US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping performance and reliability attributes of the single device.
What is the thermal resistance of MQ1N8171US/TR, and how does it affect power derating?
The MQ1N8171US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W. At ambient temperatures above 25 °C, its steady-state power dissipation must be linearly derated per Figure 3 in the datasheet - e.g., at 75 °C TA, maximum average power drops to ~0.67 W. This derating ensures junction temperature remains ≤175 °C, preserving long-term reliability in sealed enclosures.
How does the "MQ" prefix in MQ1N8171US/TR indicate its reliability grade?
The "MQ" prefix denotes JAN-level reliability qualification per MIL-PRF-19500, indicating that MQ1N8171US/TR meets stringent screening requirements including burn-in, temperature cycling, and hermeticity testing. Unlike commercial "1N8171US/TR", the MQ variant is approved for use in military and space applications where zero-defect operation is mandated across extended temperature and radiation environments.
MQ1N8171US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 93.7V
- Current - Peak Pulse (10/1000µs):
- 1.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8171US/TR FAQ
1.How can I place an order for MQ1N8171US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8171US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8171US/TR reliable?
The price and inventory of MQ1N8171US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8171US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8171US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8171US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8171US/TR?
MQ1N8171US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8171US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8171US/TR?
For technical support, including MQ1N8171US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8171US/TR requirements.
6.How does Aetrix verify that MQ1N8171US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8171US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8171US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8171US/TR?
All MQ1N8171US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8171US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8171US/TR part is unused and in its original packaging.
Return procedure for MQ1N8171US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8171US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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