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Microchip Technology MQ1N8172US/TR
- Part No.:
- MQ1N8172US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8172US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,863
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Product details
Overview
MQ1N8172US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 71.3 V minimum breakdown voltage (V(BR)), 64.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and aerospace data links.
For engineers reviewing the MQ1N8172US/TR datasheet, MQ1N8172US/TR pinout, MQ1N8172US/TR application, or MQ1N8172US/TR equivalent, key selection criteria include clamping voltage (103.0 V at 300 A IPP), low-leakage standby current (0.5 µA at VWM), radiation-hardened construction, and Category 1 metallurgical bonding for mission-critical systems.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass hermetic package eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards. It is inherently radiation-hard per Microsemi MicroNote 050 and rated for 300 A peak impulse current (IPP) under 10/1000 µs waveform.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 64.0 V - maximum continuous reverse voltage before leakage exceeds 0.5 µA; defines safe operating threshold for protected signal lines. |
| V(BR) min | 71.3 V - guaranteed avalanche onset at 1 mA test current; ensures predictable turn-on during transients. |
| VC @ IPP | 103.0 V at 300 A - clamping voltage limits downstream IC stress during worst-case surge events. |
| CT | 4 pF - enables use in >1 GHz RF paths without signal integrity degradation. |
| PPP | 150 W at 25 °C - peak power dissipation capability for 10/1000 µs transients; derates linearly above 25 °C. |
| TJ range | –55 to +175 °C - supports deployment in avionics, downhole, and space-qualified electronics. |
| RθJA | 150 °C/W - thermal resistance informs PCB copper area requirements for sustained power handling. |
Pinout & Package
MQ1N8172US/TR uses an axial-leaded, hermetically sealed hard-glass package with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased) | Connected to protected line; conducts surge current to ground when V > VWM. |
| Cathode | Reference terminal (marked with band) | Connected to system ground; establishes polarity for unidirectional clamping action. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - critical for 20+ year field life in sealed enclosures. |
| Category 1 metallurgical bond | Internal tungsten-slug interconnect certified for MIL-PRF-19500/530 reliability level - required for defense/aerospace programs. |
| Low 4 pF capacitance | Preserves signal rise time and impedance matching in high-speed serial links (e.g., RS-422, ARINC 429). |
| Radiation hardness | Qualified per Microsemi MicroNote 050 - withstands total ionizing dose (TID) >100 krad(Si) without parameter shift. |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT bursts - reduces need for external filtering. |
Applications
| Aerospace Data Bus Protection | Downhole Telemetry Interface |
|---|---|
Use Scenario: Protecting ARINC 429 receive inputs in flight control computers exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp on differential data line, placed before receiver input to limit voltage excursion. Use Value: 4 pF capacitance prevents signal distortion at 100 kbps; 103.0 V clamping ensures receiver IC remains below absolute maximum rating during 300 A transients. | Use Scenario: Shielding RS-485 transceivers in oil/gas wellhead controllers subjected to ESD and switching noise in explosive environments. IC Role / Device Role / Timing Role: Standoff protection on half-duplex bus lines, mounted directly at connector entry point. Use Value: –55 to +175 °C operation enables direct PCB mounting in unheated enclosures; Category 1 bond guarantees reliability across 10,000+ thermal cycles. |
| Military Radio Front-End | Satellite Command Receiver |
Use Scenario: Safeguarding L-band RF amplifier inputs in handheld tactical radios against antenna-coupled ESD and EMP. IC Role / Device Role / Timing Role: Low-capacitance shunt protector between antenna feed and first-stage LNA. Use Value: 4 pF capacitance avoids resonant detuning of 1.2–1.4 GHz matching networks; 150 W PPP handles multi-pulse EMP waveforms. | Use Scenario: Securing S-band command demodulator inputs on LEO satellites where single-event burnout must be avoided. IC Role / Device Role / Timing Role: Radiation-hardened transient suppressor on telemetry downlink signal path. Use Value: TID >100 krad(Si) tolerance and hermetic seal prevent parametric drift in vacuum; 64.0 V VWM matches spacecraft bus voltage margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ64A | Surface-mount DO-214AB package; 64 V VWM; 100 pF capacitance; 1500 W PPP rating. | Higher capacitance limits use to sub-100 MHz signals; larger footprint; lower thermal resistance. | Select for cost-sensitive industrial designs where RF performance is non-critical and board space allows SMD placement. |
| 1N6105A | Axial-leaded DO-41; 64 V VWM; 100 pF; 150 W PPP; commercial-grade glass passivation only. | No Category 1 bond; not radiation-hardened; limited to –65 to +175 °C; no IEC61000-4-5 validation. | Choose for terrestrial telecom equipment requiring basic surge protection without aerospace qualification overhead. |
Compared with SMCJ64A and 1N6105A, MQ1N8172US/TR uniquely combines ultra-low 4 pF capacitance, hermetic Category 1 reliability, and radiation hardness - making it the only option qualified for RF-intensive, long-life, safety-critical deployments where failure is not tolerable.
Availability
MQ1N8172US/TR is available at Aetrix Electronics and suitable for aerospace data buses, downhole telemetry interfaces, military radio front-ends, satellite command receivers, and high-reliability industrial control systems requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8172US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The 1N8149–1N8182 family was engineered specifically for ultra-low-capacitance transient suppression in mission-critical RF and digital signal paths where conventional TVS diodes introduce unacceptable signal distortion or reliability risk.
FAQ
What is the clamping voltage of MQ1N8172US/TR at its rated peak impulse current?
The MQ1N8172US/TR has a maximum clamping voltage (VC) of 103.0 V when subjected to its rated peak impulse current (IPP) of 300 A under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and defines the upper voltage limit imposed on the protected circuit during surge events. The MQ1N8172US/TR maintains this clamping performance across its full operating temperature range due to its stable avalanche characteristics and hermetic construction.
Is MQ1N8172US/TR suitable for bidirectional transient protection?
No - MQ1N8172US/TR is a unidirectional TVS diode, designed for protection of DC-biased or single-polarity signal lines. For bidirectional protection, two MQ1N8172US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but preserves low-clamp performance for both polarities of transient events.
Does MQ1N8172US/TR meet RoHS requirements?
Yes - the "e3" suffix in MQ1N8172US/TR indicates RoHS-compliant matte tin plating on axial leads. The device complies with Directive 2011/65/EU and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Full material declarations and test reports are available upon request from Aetrix Electronics for compliance documentation.
What is the maximum steady-state power dissipation of MQ1N8172US/TR at 25 °C ambient?
The MQ1N8172US/TR has a maximum steady-state (average) power dissipation (PM(AV)) of 1.0 W at TA = 25 °C. This rating assumes adequate PCB thermal management to maintain junction temperature within –55 to +175 °C. Derating is required above 25 °C per the published thermal resistance (RθJA = 150 °C/W) and the curve in Figure 3 of the datasheet.
How does the internal rectifier diode affect the electrical behavior of MQ1N8172US/TR?
The MQ1N8172US/TR integrates a unique rectifier diode in series and opposite direction to the TVS junction - a proprietary architecture that blocks reverse leakage while enabling ultra-low 4 pF capacitance. This configuration yields unidirectional clamping with near-zero capacitance contribution from the rectifier, unlike standard TVS diodes. The result is preserved high-frequency signal integrity without sacrificing surge robustness.
MQ1N8172US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 1.45A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8172US/TR FAQ
1.How can I place an order for MQ1N8172US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8172US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8172US/TR reliable?
The price and inventory of MQ1N8172US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8172US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8172US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8172US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8172US/TR?
MQ1N8172US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8172US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8172US/TR?
For technical support, including MQ1N8172US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8172US/TR requirements.
6.How does Aetrix verify that MQ1N8172US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8172US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8172US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8172US/TR?
All MQ1N8172US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8172US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8172US/TR part is unused and in its original packaging.
Return procedure for MQ1N8172US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8172US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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