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Microchip Technology MQ1N8173US/TR
- Part No.:
- MQ1N8173US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8173US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,194
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Product details
Overview
MQ1N8173US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 77.9 V minimum breakdown voltage (V(BR)), 70 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonds for high-reliability aerospace and defense applications.
For engineers reviewing the MQ1N8173US/TR datasheet, MQ1N8173US/TR pinout, MQ1N8173US/TR application, or MQ1N8173US/TR equivalent, this device is selected for ESD/EFT protection per IEC61000-4-2/4-4, secondary lightning protection per IEC61000-4-5, and high-frequency signal line protection where low capacitance and radiation hardness are critical.
Technical Context
The MQ1N8173US/TR implements a unique dual-element structure: a TVS diode in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance - the lowest available for a 150 W rated TVS. Its hard-glass hermetic package ensures voidless sealing and intrinsic radiation hardness per MicroNote 050.
It operates across –55 °C to +175 °C junction temperature, supports 0.01% impulse repetition rate, and delivers 113 V clamping voltage (VC) at 300 A peak surge current (IPP). The device is RoHS-compliant (e3 marking) and rated for 300 V inverse blocking voltage (VWIB) with ≤0.5 µA leakage at 70 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 70 V - maximum continuous reverse-biased operating voltage before conduction begins |
| V(BR) min | 77.9 V at 1 mA - guaranteed breakdown threshold under standardized test current |
| VC @ IPP | 113 V at 300 A - clamped voltage during worst-case 10/1000 µs surge, limiting downstream stress |
| CT | 4 pF - enables protection of >1 GHz RF lines and high-speed data interfaces without signal distortion |
| PPP | 150 W - peak transient energy absorption capability under standard 10/1000 µs waveform |
| TJ range | –55 °C to +175 °C - qualified for extended-temperature military, avionics, and downhole systems |
| VWIB | 300 V - maximum reverse-blocking voltage before leakage exceeds 1 µA |
Pinout & Package
MQ1N8173US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band polarity marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight ≈340 mg; dimensions per Microsemi T4-LDS-xxxx: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during positive surge | Connected to protected line; conducts only when voltage exceeds VWM in forward direction |
| Cathode | Transient current return path with polarity band | Marked end; connects to ground or lower-potential rail; defines unidirectional clamping behavior |
Key Features
| Feature | Design Value |
|---|---|
| Lowest-capacitance 150 W TVS | 4 pF enables protection of RF front-ends, GPS antennas, and high-speed serial links without impedance mismatch |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including spaceflight and nuclear instrumentation |
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in humid or corrosive environments |
| Radiation-hardened design | Inherent tolerance to total ionizing dose (TID) per Microsemi MicroNote 050 - no derating required in radiation fields |
Applications
| GPS Receiver Front-End Protection | Aerospace Data Bus Line Protection |
|---|---|
Use Scenario: Protecting L1-band (1.575 GHz) antenna feedlines from ESD and nearby lightning-induced transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between antenna port and LNA input to clamp surges while preserving RF integrity. Use Value: 4 pF capacitance avoids detuning of matching networks; 113 V clamping prevents LNA saturation or damage. | Use Scenario: Safeguarding MIL-STD-1553B stub connections on flight control computers against induced surges. IC Role / Device Role / Timing Role: Standoff-rated TVS on each data line to absorb coupling transients without disrupting 1 Mbps Manchester-encoded signals. Use Value: 70 V VWM matches bus common-mode range; 150 W rating handles worst-case coupled energy from adjacent wiring. |
| Nuclear Instrumentation Signal Conditioning | Downhole Telemetry Interface |
Use Scenario: Shielding gamma spectrometer preamplifier inputs from electrostatic discharge in containment vaults. IC Role / Device Role / Timing Role: Low-leakage TVS on charge-sensitive amplifier inputs to prevent baseline shift or latch-up. Use Value: ≤0.5 µA ID at 70 V ensures minimal DC error; –55 °C to +175 °C operation supports vault ambient extremes. | Use Scenario: Protecting RS-485 transceivers in oil/gas wellhead controllers exposed to lightning and switching transients. IC Role / Device Role / Timing Role: Bidirectional protection achieved via two MQ1N8173US/TR in anti-parallel configuration per Figure 5. Use Value: Dual-device setup yields 8 pF total capacitance - still suitable for 10 Mbps RS-485 - with full 300 V VWIB rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N8173US (non-TR) | Same electrical specs and package; differs only in packaging - bulk vs. tape-and-reel | No functional difference; TR version supports automated SMT placement | Select MQ1N8173US/TR for volume production requiring reel-fed pick-and-place; use 1N8173US for prototyping or manual assembly |
| SMCJ70A | Higher capacitance (150 pF), larger SMC package, 70 V VWM but 113 V VC at 32.1 A (not 300 A) | Lower surge rating (1500 W vs. 150 W) but unsuitable for RF/high-frequency lines due to capacitance | Choose SMCJ70A only for cost-sensitive industrial power-line protection where bandwidth is not constrained |
Compared with MQ1N8173US/TR, the 1N8173US offers identical performance in bulk form but lacks tape-and-reel logistics; SMCJ70A trades ultra-low capacitance and radiation hardness for higher surge current in non-RF applications, making it incompatible for high-frequency signal paths.
Availability
MQ1N8173US/TR is available at Aetrix Electronics and suitable for GPS receiver front-end protection, aerospace data bus line protection, and nuclear instrumentation signal conditioning requiring stable component supply, long-lifecycle assurance, and traceable sourcing.
Supply support for MQ1N8173US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and extended-temperature solutions.
The 1N8149–1N8182 series was engineered specifically for mission-critical transient protection in RF and high-frequency systems where conventional TVS devices introduce unacceptable signal degradation.
FAQ
What is the clamping voltage of MQ1N8173US/TR at its rated peak surge current?
The MQ1N8173US/TR has a maximum clamping voltage (VC) of 113 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Microsemi's T4-LDS-xxxx specification and ensures downstream circuitry remains within safe operating limits during transient events. The MQ1N8173US/TR maintains this clamping performance across its full operating temperature range.
Is MQ1N8173US/TR suitable for bidirectional transient protection?
MQ1N8173US/TR is inherently unidirectional, but bidirectional protection can be implemented using two MQ1N8173US/TR devices in anti-parallel configuration as shown in Figure 5 of the datasheet. This arrangement doubles capacitance to 8 pF while preserving 300 V inverse blocking capability and 113 V clamping symmetry. No single-device bidirectional variant exists in this family.
Does MQ1N8173US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MQ1N8173US/TR provides ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4 as stated in the Applications/Benefits section of the Microsemi datasheet. Its low capacitance and fast response enable effective suppression of contact and air-discharge transients up to ±15 kV without degrading high-speed signal integrity - a key requirement for compliance testing.
What is the thermal resistance and steady-state power rating of MQ1N8173US/TR?
The MQ1N8173US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W and a steady-state average power rating (PM(AV)) of 1.0 W at TA = 25 °C. This rating assumes adequate PCB thermal management; exceeding TJ(max) = +175 °C will degrade reliability. The MQ1N8173US/TR is not intended for continuous power dissipation but for transient energy absorption only.
How does the "MQ" prefix in MQ1N8173US/TR affect its reliability classification?
The "MQ" prefix denotes JAN-level reliability qualification per Microsemi's nomenclature, indicating compliance with MIL-PRF-19500 requirements for high-reliability applications. This includes enhanced screening, lot traceability, and extended temperature validation. The MQ1N8173US/TR is therefore approved for use in defense, space, and safety-critical systems where commercial-grade parts are insufficient.
MQ1N8173US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 70V
- Voltage - Breakdown (Min):
- 77.9V
- Voltage - Clamping (Max) @ Ipp:
- 113V
- Current - Peak Pulse (10/1000µs):
- 1.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8173US/TR FAQ
1.How can I place an order for MQ1N8173US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8173US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8173US/TR reliable?
The price and inventory of MQ1N8173US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8173US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8173US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8173US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8173US/TR?
MQ1N8173US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8173US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8173US/TR?
For technical support, including MQ1N8173US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8173US/TR requirements.
6.How does Aetrix verify that MQ1N8173US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8173US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8173US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8173US/TR?
All MQ1N8173US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8173US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8173US/TR part is unused and in its original packaging.
Return procedure for MQ1N8173US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8173US/TR Tags
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