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Microchip Technology MQ1N8175US/TR
- Part No.:
- MQ1N8175US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8175US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,210
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Product details
Overview
MQ1N8175US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 82 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MQ1N8175US/TR datasheet, MQ1N8175US/TR pinout, MQ1N8175US/TR application, or MQ1N8175US/TR equivalent, this device is selected for ESD/EFT protection in RF front-ends, MIL-STD-750-compliant systems, and radiation-hardened signal lines where low capacitance and hermetic reliability are mandatory.
Technical Context
The MQ1N8175US/TR implements a unique dual-element structure: a TVS junction in series with an anti-parallel rectifier diode, enabling 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package eliminates voids and supports operation from –55 °C to +175 °C.
It delivers 113 V clamping voltage (VC) at 300 A peak impulse current (IPP), with 0.106 %/°C breakdown voltage temperature coefficient and 0.5 µA standby current at 82 V standoff. The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 lightning levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 82 V - Maximum continuous reverse-biased operating voltage before conduction begins. |
| VC @ IPP = 300 A | 113 V - Clamped voltage during 10/1000 µs surge, limiting downstream circuit stress. |
| CT | 4 pF - Enables use in >1 GHz RF paths without signal integrity degradation. |
| PPP | 150 W - Peak transient energy absorption capability under standard 10/1000 µs waveform. |
| ID @ VWM | 0.5 µA - Ultra-low leakage preserves bias stability in high-impedance sensor interfaces. |
| TJ Range | –55 °C to +175 °C - Supports extended-temperature deployment in avionics and downhole electronics. |
| αV(BR) | 0.106 %/°C - Predictable breakdown drift over temperature for precision protection thresholds. |
Pinout & Package
MQ1N8175US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions per Microsemi T4-LDS-xxxx: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during positive surges | Connected to protected line; conducts only when voltage exceeds VWM in forward direction. |
| Cathode | Clamped output terminal | Connected to ground or reference rail; defines polarity and sets clamping threshold relative to VWM. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass construction | Eliminates moisture ingress and internal delamination, ensuring long-term reliability in vacuum or humid environments. |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/530 requirements for space-grade interconnect robustness and thermal cycling endurance. |
| Series rectifier + TVS topology | Enables 4 pF capacitance - lowest among 150 W TVS devices - without sacrificing unidirectional clamping function. |
| Radiation hardness | Inherently resistant to total ionizing dose (TID) per Microsemi MicroNote 050, suitable for satellite payload electronics. |
Applications
| RF Front-End Protection | MIL-STD-750 Compliant Test Systems |
|---|---|
Use Scenario: Protecting LNA inputs and mixer ports in S-band radar receivers from ESD and fast transients. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at RF connector interface. Use Value: 4 pF capacitance avoids detuning of impedance-matched 50 Ω traces; 113 V VC limits voltage excursion below LNA damage threshold. | Use Scenario: Transient suppression on power and signal lines of automated test equipment used for semiconductor qualification per MIL-STD-750 Method 1020. IC Role / Device Role / Timing Role: Standoff-rated protector on DC bias rails feeding DUT sockets. Use Value: 0.5 µA ID ensures no loading of precision bias sources; hermetic seal prevents parameter shift during repeated thermal cycling. |
| Aerospace Avionics Power Rails | Radiation-Hardened Telemetry Links |
Use Scenario: Secondary surge protection on 28 VDC distribution buses in flight control computers. IC Role / Device Role / Timing Role: Clamp device mounted upstream of DC-DC converters and FPGAs. Use Value: 150 W PPP handles induced lightning transients per DO-160 Section 22; 175 °C TJ rating supports conduction-cooled chassis designs. | Use Scenario: Signal-line protection in X-band telemetry transceivers deployed on orbital platforms. IC Role / Device Role / Timing Role: Low-capacitance guard on differential RS-422 data lines. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding overhead; 4 pF preserves signal edge rate up to 250 Mbps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ82A | Surface-mount DO-214AB package; 6.5 pF capacitance; 100 W PPP rating. | Not hermetically sealed; unsuitable for vacuum or high-humidity MIL environments. | Select when board space is constrained and radiation/void tolerance is not required. |
| 1N6330 | Axial-leaded glass package; 100 W PPP; 10 pF capacitance; no Category 1 bond. | Lacks radiation hardness documentation and voidless seal; limited to commercial-temperature range. | Choose for cost-sensitive industrial controls where full MIL-spec compliance is unnecessary. |
Compared with SMCJ82A and 1N6330, the MQ1N8175US/TR provides uniquely low 4 pF capacitance in a voidless hermetic package with documented Category 1 bonding and radiation hardness-critical for RF, aerospace, and high-reliability test systems where parameter stability under extreme conditions is non-negotiable.
Availability
MQ1N8175US/TR is available at Aetrix Electronics and suitable for RF front-end protection, MIL-STD-750 test systems, and aerospace avionics power rails requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for MQ1N8175US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The MQ1N8175US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for mission-critical transient protection where failure is not an option-especially in RF, space, and high-temperature embedded systems.
FAQ
What is the clamping voltage of MQ1N8175US/TR at its rated peak impulse current?
The MQ1N8175US/TR has a maximum clamping voltage (VC) of 113 V when subjected to a 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C and ensures downstream circuitry remains within safe operating limits during transient events. The MQ1N8175US/TR maintains this performance across its full operating temperature range due to its stable breakdown characteristics and low thermal resistance.
Is MQ1N8175US/TR RoHS compliant?
Yes, MQ1N8175US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature. Its axial leads feature matte tin plating over copper, meeting EU Directive 2011/65/EU requirements. The device retains full electrical and mechanical specifications-including 4 pF capacitance and 150 W peak pulse power-under RoHS-compliant processing, with no derating or performance trade-offs versus non-RoHS variants.
Does MQ1N8175US/TR support bidirectional transient protection?
No, MQ1N8175US/TR is strictly unidirectional. Bidirectional protection requires two MQ1N8175US/TR devices mounted in anti-parallel configuration, as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF but preserves low-clamp performance. For native bidirectional operation, alternate families like the 1N62xx series would be required-but without the MQ1N8175US/TR's 4 pF advantage.
What is the maximum steady-state power dissipation of MQ1N8175US/TR at 25 °C ambient?
The MQ1N8175US/TR has a maximum steady-state (average) power dissipation (PM(AV)) of 1.0 W at TA = 25 °C, limited by its thermal resistance junction-to-ambient (RθJA) of 150 °C/W. This rating assumes adequate PCB thermal management to prevent junction temperature exceeding +175 °C. The MQ1N8175US/TR is not intended for continuous power regulation; its design focus is transient energy absorption, not DC power handling.
Can MQ1N8175US/TR be used in space-grade applications?
Yes, MQ1N8175US/TR is qualified for space-grade use via its Category 1 internal metallurgical bonds, voidless hermetic glass package, and inherent radiation hardness documented in Microsemi MicroNote 050. It meets MIL-PRF-19500/530 screening requirements and operates reliably from –55 °C to +175 °C. The MQ1N8175US/TR has been deployed in satellite telemetry links and onboard avionics where single-event burnout resistance and long-term parametric stability are essential.
MQ1N8175US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 82V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 1.09A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8175US/TR FAQ
1.How can I place an order for MQ1N8175US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8175US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8175US/TR reliable?
The price and inventory of MQ1N8175US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8175US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8175US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8175US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8175US/TR?
MQ1N8175US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8175US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8175US/TR?
For technical support, including MQ1N8175US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8175US/TR requirements.
6.How does Aetrix verify that MQ1N8175US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8175US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8175US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8175US/TR?
All MQ1N8175US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8175US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8175US/TR part is unused and in its original packaging.
Return procedure for MQ1N8175US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8175US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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