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Microchip Technology MQ1N8176US/TR
- Part No.:
- MQ1N8176US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8176US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,171
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Product details
Overview
MQ1N8176US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 94 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MQ1N8176US/TR datasheet, MQ1N8176US/TR pinout, MQ1N8176US/TR application, or MQ1N8176US/TR equivalent, key selection criteria include clamping voltage (137 V at 11.7 A), low standby current (0.5 µA), IEC61000-4-2/4-4 compliance, and axial-leaded hard-glass package suitability for through-hole mounting in ESD-critical RF front-ends.
Technical Context
This TVS employs a unique series-connected rectifier diode opposing the avalanche junction to achieve 4 pF total capacitance-lowest among 150 W-rated TVS devices. Its unidirectional architecture provides precise inverse blocking (VWIB = 94 V) and low leakage (IIB = 1 µA).
Rated for -55 °C to +175 °C operation, it delivers 137 V clamping voltage at 11.7 A peak impulse current (IPP), with thermal resistance of 150 °C/W and temperature coefficient of breakdown voltage αV(BR) = 0.106 %/°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 94 V - Maximum continuous reverse standoff voltage before conduction begins; sets operating margin for protected signal lines. |
| VC @ IPP | 137 V at 11.7 A - Clamping voltage during 10/1000 µs surge; defines maximum stress on downstream ICs. |
| CT | 4 pF - Total small-signal capacitance; enables use in >1 GHz RF circuits without signal distortion. |
| PPP | 150 W - Peak pulse power rating at 25 °C; supports robust lightning-level transients per IEC61000-4-5. |
| TJ Range | -55 to +175 °C - Junction temperature range; validated for extended-life operation in avionics and downhole electronics. |
| ID | 0.5 µA - Standby leakage at VWM; ensures minimal DC loading on high-impedance sensor interfaces. |
| V(BR) Min | 104 V - Minimum breakdown voltage at 1 mA; guarantees turn-on threshold consistency across temperature and life. |
Pinout & Package
Package: Axial-leaded hermetically sealed voidless hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line; conducts only during reverse-transient suppression mode when cathode is held at higher potential. |
| Cathode | Negative terminal; marked with band | Connected to ground or reference rail; defines polarity-sensitive clamping direction and blocks >94 V in normal operation. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond qualified per MIL-STD-750 Method 2029; ensures zero voids and long-term reliability in radiation-hardened systems. |
| Triple-layer passivation | Hermetic glass encapsulation with three dielectric layers prevents moisture ingress and surface leakage in humid environments. |
| Lowest 150 W TVS capacitance | 4 pF measured at 0 V; preserves signal integrity in broadband RF receivers and high-speed data links up to 3 GHz. |
| IEC61000-4-2/4-4 certified | Validated for ±30 kV contact / ±30 kV air discharge ESD and 4 kV EFT bursts; eliminates need for external filtering in Class B equipment. |
Applications
| RF Front-End Protection | Aerospace Avionics Bus |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and low-noise amplifier inputs from lightning-induced surges and ESD events. IC Role / Device Role / Timing Role: Unidirectional TVS placed between antenna port and LNA input to clamp transients while preserving RF bandwidth. Use Value: 4 pF capacitance avoids detuning of matching networks; 137 V clamping protects GaAs MMICs rated for ≤150 V absolute max. | Use Scenario: Safeguarding ARINC 429 data bus receivers against induced transients during aircraft ground handling and lightning strikes. IC Role / Device Role / Timing Role: Standoff protection on receive-side differential inputs to maintain signal fidelity and prevent latch-up. Use Value: -55 °C to +175 °C operation supports engine-mounted electronics; Category 1 bond ensures mission-critical continuity. |
| Downhole Telemetry Interface | Military Radar Power Supply |
Use Scenario: Transient suppression on RS-485 telemetry lines in oil/gas wellhead controllers exposed to high-voltage switching noise. IC Role / Device Role / Timing Role: Bidirectional protection achieved using two MQ1N8176US/TR in anti-parallel configuration per Figure 5. Use Value: Dual-device setup yields 8 pF total capacitance-still <10 pF-enabling reliable 1 Mbps data transmission at 150 °C ambient. | Use Scenario: Secondary surge protection on +28 V DC power rails feeding T/R modules in phased-array radar systems. IC Role / Device Role / Timing Role: Standoff clamping device mounted directly at module input to limit voltage overshoot during load dump events. Use Value: 150 W PPP rating handles 500 A/10 ms pulses; voidless glass construction withstands mechanical shock per MIL-STD-810G. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ93A | Surface-mount SMC package; 100 pF capacitance; 93 V VWM; 1500 W PPP rating but higher clamping (151 V @ 100 A) | Designed for PCB space-constrained industrial drives; unsuitable for RF due to high capacitance | Select only if board layout requires SMT and RF performance is not required |
| 1N6378 | Axial-leaded DO-41; 100 pF capacitance; 91 V VWM; 150 W PPP; no Category 1 bond or triple-layer passivation | Commercial-grade alternative for non-mission-critical telecom power supplies | Choose only for cost-sensitive applications where radiation hardness and hermeticity are unnecessary |
Compared with SMCJ93A and 1N6378, MQ1N8176US/TR uniquely delivers 4 pF capacitance and Category 1 reliability in an axial-leaded package-enabling RF-grade transient protection where both signal integrity and field lifetime are non-negotiable.
Availability
MQ1N8176US/TR is available at Aetrix Electronics and suitable for RF front-end protection, aerospace avionics buses, and downhole telemetry interfaces requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for MQ1N8176US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and hermetically sealed components.
The MQ1N8176US/TR belongs to Microsemi's 1N8149–1N8182 series of voidless-hermetically-sealed TVS diodes engineered specifically for high-frequency, high-reliability transient suppression in mission-critical systems.
FAQ
What is the clamping voltage of MQ1N8176US/TR at its rated peak impulse current?
The MQ1N8176US/TR has a maximum clamping voltage (VC) of 137 V at 11.7 A peak impulse current (IPP), tested under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is critical for ensuring compatibility with downstream IC absolute maximum ratings. The MQ1N8176US/TR maintains this clamping performance across its full operating temperature range.
Is MQ1N8176US/TR suitable for bidirectional transient protection?
MQ1N8176US/TR is inherently unidirectional, but bidirectional protection can be implemented by connecting two MQ1N8176US/TR devices in anti-parallel configuration as shown in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF while preserving low-clamping performance and reliability. The MQ1N8176US/TR itself does not function as a bidirectional device in single-unit form.
Does MQ1N8176US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MQ1N8176US/TR is specified for ESD immunity per IEC61000-4-2 (±30 kV contact, ±30 kV air) and electrical fast transient (EFT) immunity per IEC61000-4-4 (4 kV burst). These capabilities are enabled by its low-leakage design, hermetic sealing, and robust junction structure. The MQ1N8176US/TR achieves these ratings without external filtering components, simplifying system-level compliance testing.
What is the thermal resistance and maximum steady-state power dissipation of MQ1N8176US/TR?
The MQ1N8176US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W and a maximum steady-state average power dissipation (PM(AV)) of 1.0 W at TA = 25 °C. This rating assumes adequate PCB thermal management; exceeding PM(AV) risks junction overheating. The MQ1N8176US/TR is optimized for transient suppression-not continuous power handling-so sustained DC stress must remain below 0.5 µA leakage at 94 V.
How does the internal series rectifier diode in MQ1N8176US/TR reduce capacitance?
The MQ1N8176US/TR integrates a rectifier diode in series and opposite polarity to the TVS junction, effectively isolating the avalanche junction's inherent capacitance during normal operation. This architecture reduces total measured capacitance to 4 pF-significantly lower than conventional TVS diodes of similar power rating. The MQ1N8176US/TR leverages this topology to enable protection in RF and high-speed digital paths where capacitance budgets are sub-5 pF.
MQ1N8176US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 104V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 980mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8176US/TR FAQ
1.How can I place an order for MQ1N8176US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8176US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8176US/TR reliable?
The price and inventory of MQ1N8176US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8176US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8176US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8176US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8176US/TR?
MQ1N8176US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8176US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8176US/TR?
For technical support, including MQ1N8176US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8176US/TR requirements.
6.How does Aetrix verify that MQ1N8176US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8176US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8176US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8176US/TR?
All MQ1N8176US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8176US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8176US/TR part is unused and in its original packaging.
Return procedure for MQ1N8176US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8176US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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