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Microchip Technology MQ1N8177US/TR
- Part No.:
- MQ1N8177US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8177US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,461
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Product details
Overview
MQ1N8177US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a working standoff voltage of 100 V, making it suitable for ESD/EFT protection in aerospace data links and MIL-STD-1553B bus interfaces.
For engineers reviewing the MQ1N8177US/TR datasheet, MQ1N8177US/TR pinout, MQ1N8177US/TR application, or MQ1N8177US/TR equivalent, key selection criteria include clamping voltage (168 V), surge current rating (300 A), low capacitance for signal integrity, and Category 1 metallurgical bond reliability for harsh-environment deployment.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic package ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards. Its 0.065 %/°C breakdown voltage temperature coefficient enables stable clamping across wide thermal ranges in avionics and satellite subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 100 V - Maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA; defines safe operating margin for 100 V nominal bus lines. |
| V(BR) min | 114 V - Minimum breakdown voltage at 1 mA test current; guarantees conduction onset above system operating voltage. |
| VC @ IPP | 168 V - Clamping voltage at 300 A peak impulse; limits transient overvoltage seen by protected ICs during lightning surges. |
| PPP | 150 W - Peak pulse power rating at 10/1000 µs waveform; quantifies energy-handling capability for MIL-STD-461E CS115 compliance. |
| CT | 4 pF - Total capacitance at 0 V; preserves signal integrity up to >1 GHz in RF front-end and high-speed serial links. |
| TJ range | –55 to +175 °C - Junction temperature range; enables use in engine-mounted sensors and space-grade telemetry without derating. |
| αV(BR) | 0.065 %/°C - Temperature coefficient of breakdown voltage; ensures <±2% V(BR) drift over full operating range. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected signal line; conducts surge current to ground when clamping threshold exceeded. |
| Cathode | Reference terminal with polarity band marking | Connected to system ground or common reference; defines unidirectional blocking direction and ensures correct orientation on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via internal series rectifier diode opposing TVS junction-enables protection of >500 Mbps serial interfaces without signal distortion. |
| Category 1 metallurgical bond | Internal bond qualified per MIL-PRF-19500 for high-reliability applications-ensures no interfacial delamination under thermal cycling or mechanical shock. |
| Hermetic glass seal | Voidless construction prevents moisture ingress and corrosion-supports 20+ year field life in humid, salt-laden, or vacuum environments. |
| ESD/EFT compliance | Validated to IEC61000-4-2 Level 4 (±15 kV air/±8 kV contact) and IEC61000-4-4 (4 kV burst)-meets DO-160 Section 22 requirements for airborne equipment. |
Applications
| MIL-STD-1553B Data Bus Protection | Aerospace Sensor Signal Conditioning |
|---|---|
Use Scenario: Protecting bidirectional Manchester-encoded data lines in flight control computers against induced transients from actuator switching and lightning coupling. IC Role / Device Role / Timing Role: Unidirectional TVS placed on each data line (±) with cathode to ground; clamps fast-rising edges while preserving 1 Mbps timing fidelity. Use Value: 4 pF capacitance avoids rise-time degradation; 168 V clamping limits bus overvoltage to within receiver input tolerance (±20 V). | Use Scenario: Shielding analog outputs of pressure and temperature transducers mounted near jet engines from EMI-induced surges. IC Role / Device Role / Timing Role: TVS installed at sensor harness entry point; anode tied to signal, cathode to chassis ground; blocks transients before reaching op-amp input stage. Use Value: –55 to +175 °C operation matches transducer thermal envelope; 150 W PPP handles engine ignition spikes without degradation. |
| Satellite Telemetry Downlink Interface | Avionics Power Supply Input Filtering |
Use Scenario: Guarding S-band downlink RF amplifier bias lines against electrostatic discharge during ground handling and launch vibration. IC Role / Device Role / Timing Role: Low-capacitance TVS placed in series with DC bias feed; cathode grounded to prevent RF shorting while enabling ESD shunting. Use Value: 4 pF minimizes RF insertion loss at 2.2 GHz; RoHS-compliant plating eliminates outgassing risk in vacuum. | Use Scenario: Suppressing load-dump transients on 28 V DC power inputs to mission-critical display controllers in fighter aircraft cockpits. IC Role / Device Role / Timing Role: TVS connected between input rail and ground; triggers at 114 V breakdown to clamp 120 V load-dump spikes within 100 ns. Use Value: 300 A surge current rating withstands 200 ms load-dump events; hermetic seal prevents failure in high-G, high-vibration environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ100A | Surface-mount SMC package; 6.5 pF capacitance; 170 V clamping at 300 A; JEDEC-standard footprint. | Designed for automated assembly; lacks Category 1 bond and hermetic seal; rated only to +150 °C junction. | Preferred for cost-sensitive commercial avionics where reflow compatibility and board density outweigh extreme reliability needs. |
| 1N6377 | Axial-leaded but non-hermetic epoxy package; 10 pF capacitance; 160 V clamping; no Category 1 qualification. | Lower cost and wider availability; not radiation-hardened; unsuitable for vacuum or high-humidity long-life deployments. | Acceptable for ground-test equipment or non-flight subsystems where 4 pF and hermeticity are not mandatory. |
Compared with SMCJ100A and 1N6377, MQ1N8177US/TR provides superior high-frequency signal integrity due to its 4 pF capacitance, guaranteed reliability via Category 1 metallurgical bonding, and extended thermal range (–55 to +175 °C), making it the only option qualified for flight-critical, radiation-exposed, or vacuum-deployed systems.
Availability
MQ1N8177US/TR is available at Aetrix Electronics and suitable for MIL-STD-1553B bus protection, aerospace sensor interface conditioning, and satellite telemetry downlink shielding requiring stable component supply across extended product lifecycles.
Supply support for MQ1N8177US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The MQ1N81xxUS/TR series belongs to Microsemi's high-reliability transient voltage suppressor family, engineered specifically for mission-critical electronic systems where failure is not an option-including flight control, satellite communications, and nuclear instrumentation.
FAQ
What is the clamping voltage of MQ1N8177US/TR at its rated 300 A surge current?
The MQ1N8177US/TR has a maximum clamping voltage (VC) of 168 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform. This value is measured per standard test conditions at TA = 25 °C and ensures downstream components remain within safe voltage limits during transient events. The MQ1N8177US/TR maintains this clamping performance across its full operating temperature range due to its low temperature coefficient.
Does MQ1N8177US/TR meet IEC61000-4-2 and IEC61000-4-4 immunity standards?
Yes, MQ1N8177US/TR is validated for ESD protection per IEC61000-4-2 (Level 4: ±15 kV air, ±8 kV contact) and for electrical fast transient (EFT) immunity per IEC61000-4-4 (4 kV burst). These certifications are documented in Microsemi's application notes and qualification reports for the 1N8149–1N8182 family. The MQ1N8177US/TR achieves this through its low-clamping, low-capacitance architecture and hermetic construction.
What is the meaning of "MQ" in MQ1N8177US/TR and how does it affect reliability?
The "MQ" prefix in MQ1N8177US/TR denotes JAN-level reliability qualification per MIL-PRF-19500, indicating compliance with military screening including extended temperature cycling, burn-in, and hermeticity testing. This designation confirms the MQ1N8177US/TR meets Category 1 internal metallurgical bond requirements and is approved for use in high-integrity systems where failure modes must be rigorously controlled.
Can MQ1N8177US/TR be used in bidirectional protection configurations?
MQ1N8177US/TR is inherently unidirectional, but bidirectional protection can be implemented by connecting two MQ1N8177US/TR devices in anti-parallel (anode-to-cathode). This configuration doubles the effective capacitance to 8 pF while preserving low clamping and high surge capability. Figure 5 in the original Microsemi datasheet explicitly validates this topology for high-frequency bidirectional signal lines.
What is the thermal resistance and steady-state power rating of MQ1N8177US/TR?
The MQ1N8177US/TR has a thermal resistance of 150 °C/W (junction-to-ambient) and a steady-state average power rating of 1.0 W at TA = 25 °C. This rating assumes adequate PCB thermal management; exceeding 1.0 W continuously risks junction temperature exceeding 175 °C. The MQ1N8177US/TR is optimized for transient suppression-not continuous dissipation-so sustained power handling remains secondary to its 150 W pulse capability.
MQ1N8177US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 100V
- Voltage - Breakdown (Min):
- 114V
- Voltage - Clamping (Max) @ Ipp:
- 168V
- Current - Peak Pulse (10/1000µs):
- 890mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8177US/TR FAQ
1.How can I place an order for MQ1N8177US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8177US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8177US/TR reliable?
The price and inventory of MQ1N8177US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8177US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8177US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8177US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8177US/TR?
MQ1N8177US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8177US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8177US/TR?
For technical support, including MQ1N8177US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8177US/TR requirements.
6.How does Aetrix verify that MQ1N8177US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8177US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8177US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8177US/TR?
All MQ1N8177US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8177US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8177US/TR part is unused and in its original packaging.
Return procedure for MQ1N8177US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8177US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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