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Microchip Technology MQ1N8180US/TR
- Part No.:
- MQ1N8180US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8180US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,903
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Product details
Overview
MQ1N8180US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 150 W peak pulse power, 4 pF capacitance, and 130 V working standoff voltage (VWM), designed for high-reliability ESD/EFT protection in RF front-ends and high-speed data lines.
For engineers reviewing the MQ1N8180US/TR datasheet, MQ1N8180US/TR pinout, MQ1N8180US/TR application, or MQ1N8180US/TR equivalent, key selection criteria include low-capacitance clamping performance, Category 1 metallurgical bond reliability, IEC61000-4-2/4-4 compliance, axial-leaded hard-glass package robustness, and 130 V VWM/208 V VC rating at 300 A IPP.
Technical Context
This TVS employs a unique series-connected rectifier diode opposite the avalanche junction to achieve ultra-low 4 pF total capacitance while maintaining unidirectional clamping behavior. It delivers 150 W peak pulse power at 10/1000 µs waveform with 300 A maximum surge current (IPP) and 208 V clamping voltage (VC) at rated current.
Rated for -55 °C to +175 °C junction temperature, it features triple-layer passivation, voidless hermetic glass sealing, and internal Category 1 metallurgical bonds-enabling radiation-hardened operation per MicroNote 050 and MIL-STD-750 Method 1020 ESD insensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 130 V - Maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA |
| VC @ IPP=300 A | 208 V - Clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| PPP | 150 W - Peak pulse power handling at 25 °C, derated above 25 °C per Figure 3 |
| CT | 4 pF - Total capacitance at 0 V, enabling minimal signal distortion in >1 GHz RF paths |
| TJ Range | -55 to +175 °C - Extended thermal operating range for aerospace and downhole applications |
| RθJA | 150 °C/W - Thermal resistance defining power derating on standard PCB mounting |
| ID @ VWM | 0.5 µA - Low standby leakage preserving signal integrity in high-impedance circuits |
Pinout & Package
Package: Axial-leaded hermetically sealed voidless hard-glass case with tungsten slugs, cathode band marking, RoHS-compliant matte tin plating over copper leads, weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias; connected to protected circuit ground reference | Provides low-impedance path to ground during transient events when cathode is at higher potential |
| Cathode | Negative terminal; marked with band; connects to protected line (e.g., RF input, data line) | Clamps voltage to ≤208 V relative to anode during positive transients; blocks >130 V DC |
Key Features
| Feature | Design Value |
|---|---|
| Series-diode-assisted low capacitance | 4 pF achieved via integrated anti-parallel rectifier, enabling RF front-end protection without bandwidth loss |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability military/aerospace use per MIL-PRF-19500 |
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in harsh environments |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and electrical overstress degradation |
| IEC61000-4-2/4-4 compliance | Validated ESD (±8 kV contact) and EFT (±2 kV) immunity for industrial interface protection |
Applications
| RF Front-End Protection | High-Speed Serial Interface |
|---|---|
Use Scenario: Protecting LNA inputs in satellite communication transceivers exposed to lightning-induced surges and ESD. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between antenna feed and LNA input, referenced to system ground. Use Value: 4 pF capacitance avoids degrading noise figure or gain flatness up to 2.5 GHz; 208 V clamping prevents LNA damage during 300 A transients. | Use Scenario: Safeguarding USB 3.0/PCIe Gen2 differential pairs in ruggedized test equipment. IC Role / Device Role / Timing Role: Discrete TVS on each signal line (TX+/TX−, RX+/RX−), mounted as close as possible to connector. Use Value: Sub-5 pF capacitance preserves signal integrity and eye diagram margin; 150 W rating handles repetitive EFT bursts without degradation. |
| Avionics Data Bus | Downhole Oilfield Sensor |
Use Scenario: Transient suppression on ARINC 429 or MIL-STD-1553B bus lines in flight control systems. IC Role / Device Role / Timing Role: Unidirectional TVS on each bus line, grounded at chassis to limit common-mode surge coupling. Use Value: Category 1 bond and -55/+175 °C rating ensure reliability across thermal cycling; 130 V VWM matches bus voltage margins. | Use Scenario: Protecting pressure/temperature sensor outputs in high-temperature wellhead electronics (150+ °C ambient). IC Role / Device Role / Timing Role: TVS on analog output line (4–20 mA loop), mounted directly at sensor module PCB edge. Use Value: Hermetic glass package withstands H₂S/CO₂ corrosion; 175 °C max TJ enables operation where plastic packages fail. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ130A | Surface-mount DO-214AB package; 6.5 pF capacitance; 130 V VWM; 219 V VC @ 243 A | Higher capacitance limits RF use; better suited for lower-frequency power rails | Select when board space is constrained and RF performance is not critical |
| 1N6331 | Axial-leaded glass package; 130 V VWM; 219 V VC @ 243 A; 6.5 pF; no Category 1 bond or radiation hardness | Lacks metallurgical qualification for aerospace; lower reliability in mission-critical systems | Select for cost-sensitive industrial applications where extended temperature and radiation tolerance are unnecessary |
Compared with SMCJ130A and 1N6331, MQ1N8180US/TR provides uniquely low 4 pF capacitance and Category 1 bond assurance-making it the only option qualified for RF-sensitive, high-reliability deployments where parameter stability under thermal/radiation stress is mandatory.
Availability
MQ1N8180US/TR is available at Aetrix Electronics and suitable for RF front-end protection, high-speed serial interface safeguarding, and avionics data bus transient suppression requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for MQ1N8180US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The MQ1N8180US/TR belongs to Microsemi's legacy 1N81xx TVS family, engineered specifically for ultra-low-capacitance transient protection in high-frequency, high-integrity systems where failure is not an option.
FAQ
What is the clamping voltage of MQ1N8180US/TR at its rated surge current?
The MQ1N8180US/TR has a maximum clamping voltage (VC) of 208 V when subjected to its rated peak impulse current (IPP) of 300 A under the standard 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The MQ1N8180US/TR maintains this clamping performance across its full operating temperature range with appropriate derating.
Is MQ1N8180US/TR RoHS compliant?
Yes, MQ1N8180US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. Its axial leads feature matte tin plating over copper, meeting EU Directive 2011/65/EU requirements. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and is suitable for environmentally regulated industrial and aerospace assemblies.
Can MQ1N8180US/TR be used for bidirectional protection?
No, MQ1N8180US/TR is strictly unidirectional. For bidirectional low-capacitance protection, two MQ1N8180US/TR devices must be connected in anti-parallel (cathode-to-anode), as shown in Figure 5 of the datasheet. This configuration doubles total capacitance to 8 pF but retains sub-210 V clamping in both polarities-still significantly lower than standard bidirectional TVS diodes.
What is the meaning of "Category 1 metallurgical bond" in MQ1N8180US/TR?
"Category 1 metallurgical bond" refers to Microsemi's proprietary internal bonding process qualified to MIL-PRF-19500 standards for highest-reliability semiconductor devices. In MQ1N8180US/TR, it ensures mechanical and electrical integrity under extreme thermal cycling, vibration, and radiation exposure-directly supporting use in space-grade and downhole electronics where bond failure would cause catastrophic system loss.
Does MQ1N8180US/TR meet IEC61000-4-5 for lightning surge protection?
MQ1N8180US/TR provides secondary lightning surge protection per select levels of IEC61000-4-5, as stated in the Applications/Benefits section of its datasheet. It is not rated for primary (line-side) lightning protection but is validated for downstream protection of sensitive electronics after primary arresters-e.g., protecting RF receivers or sensor interfaces located behind building entry points or isolation transformers.
MQ1N8180US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 130V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 225V
- Current - Peak Pulse (10/1000µs):
- 670mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8180US/TR FAQ
1.How can I place an order for MQ1N8180US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8180US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8180US/TR reliable?
The price and inventory of MQ1N8180US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8180US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8180US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8180US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8180US/TR?
MQ1N8180US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8180US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8180US/TR?
For technical support, including MQ1N8180US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8180US/TR requirements.
6.How does Aetrix verify that MQ1N8180US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8180US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8180US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8180US/TR?
All MQ1N8180US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8180US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8180US/TR part is unused and in its original packaging.
Return procedure for MQ1N8180US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8180US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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