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Microchip Technology MQ1N8181US/TR
- Part No.:
- MQ1N8181US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MQ1N8181US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,799
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Product details
Overview
MQ1N8181US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 150 W peak pulse power, 4 pF capacitance, and 150 V working standoff voltage (VWM), designed for high-reliability ESD/EFT protection in high-frequency telecom and aerospace signal lines.
For engineers reviewing the MQ1N8181US/TR datasheet, MQ1N8181US/TR pinout, MQ1N8181US/TR application, or MQ1N8181US/TR equivalent, key selection criteria include low-capacitance clamping performance, Category 1 metallurgical bond reliability, IEC61000-4-2/4-4 compliance, and axial-leaded thru-hole mounting compatibility.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
The device delivers 150 W peak pulse power at 10/1000 µs waveform with 261 V maximum clamping voltage (VC) at 11.7 A IPP, and exhibits <0.108 %/°C breakdown voltage temperature coefficient - critical for stable protection across wide thermal environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 150 V - Maximum continuous reverse standoff voltage before conduction begins; defines safe operating margin for protected line. |
| VC @ IPP | 261 V @ 11.7 A - Clamping voltage during 10/1000 µs surge; limits transient energy delivered to downstream circuitry. |
| CT | 4 pF - Total small-signal capacitance; enables use in >1 GHz RF paths without signal integrity degradation. |
| PPP | 150 W - Peak pulse power rating at 25 °C; validated for lightning-level transients per IEC61000-4-5 Level 3. |
| TJ Range | –55 to +175 °C - Extended junction temperature range supports aerospace, downhole, and military embedded systems. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; informs PCB copper area requirements for sustained power dissipation. |
| αV(BR) | 0.108 %/°C - Low temperature coefficient ensures stable breakdown voltage across operational temperature extremes. |
Pinout & Package
MQ1N8181US/TR uses an axial-leaded "A" package (hard-glass hermetic case with tungsten slugs), RoHS-compliant matte tin plating over copper leads, cathode band polarity marking, and standard EIA-296 tape-and-reel option. Weight: ~340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only when voltage exceeds VWM + dynamic overshoot. |
| Cathode | Reference node / clamping return path | Typically tied to system ground or low-impedance reference; establishes clamping threshold relative to this node. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and delamination risk-enables 20+ year field life in sealed avionics enclosures. |
| Category 1 metallurgical bond | Internal tungsten-copper interconnect certified for MIL-PRF-19500 Class H/J reliability; withstands 1000+ thermal cycles. |
| Low 4 pF capacitance | Preserves signal rise time and impedance matching in 100 Mbps+ serial links (e.g., RS-485, CAN FD, LVDS). |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT bursts-meets industrial control system immunity mandates. |
| Rad-hard inherent design | No parameter shift under 100 krad(Si) TID exposure per MicroNote 050-suitable for LEO satellite payload interfaces. |
Applications
| Telecom Line Interface Protection | Aerospace Data Bus Protection |
|---|---|
Use Scenario: Protecting RS-422/RS-485 differential pairs in base station backhaul equipment exposed to induced lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS placed between each data line and chassis ground to clamp common-mode transients without distorting differential signaling. Use Value: 4 pF capacitance prevents signal edge degradation at 10 Mbps+, while 261 V clamping limits bus voltage excursion below receiver absolute maximum ratings. | Use Scenario: Safeguarding ARINC 429 receive inputs on flight control computers subjected to aircraft static discharge and EMP events. IC Role / Device Role / Timing Role: Standoff-rated TVS on each input line to absorb fast-rising transients while preserving <10 ns propagation delay of the bus interface. Use Value: –55 °C to +175 °C operation and Category 1 bonding ensure uninterrupted protection during rapid cabin pressure/temperature cycling. |
| Industrial Ethernet PHY Protection | Military Radar Signal Conditioning |
Use Scenario: Shielding 100BASE-TX transformer-coupled PHY lanes in ruggedized PLC gateways deployed near motor drives. IC Role / Device Role / Timing Role: Low-capacitance TVS on MDI lines to suppress coupled EFT noise without attenuating 125 MHz symbol rate harmonics. Use Value: 150 W PPP rating handles repetitive 4 kV EFT bursts per IEC61000-4-4, and RoHS-compliant plating meets defense procurement directives. | Use Scenario: Transient suppression on IF sampling lines in airborne radar receivers where signal fidelity at 2–4 GHz must be preserved. IC Role / Device Role / Timing Role: Hermetically sealed TVS mounted directly at RF connector feedthrough to minimize parasitic inductance in clamping path. Use Value: Voidless glass construction prevents outgassing in vacuum environments, and <0.108 %/°C αV(BR) maintains consistent clamping across radar warm-up cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ150A | 150 V VWM, 243 V VC @ 12.3 A, 600 W PPP, 15 pF CT, DO-214AA package | Higher capacitance limits use above ~500 MHz; higher PPP suits less frequent but larger surges | Select when board space allows SMT and surge duty cycle permits higher clamping voltage tolerance. |
| 1.5KE150A | 150 V VWM, 243 V VC @ 12.3 A, 1500 W PPP, 30 pF CT, DO-201 package | 30 pF capacitance degrades high-speed signal integrity; bulkier axial package requires more PCB real estate | Choose for cost-sensitive industrial mains protection where speed and capacitance are secondary to energy handling. |
Compared with SMBJ150A and 1.5KE150A, MQ1N8181US/TR uniquely delivers 4 pF capacitance in a hermetic axial package with Category 1 bonding-making it the only option qualified for radiation-tolerant, high-frequency, long-lifetime aerospace signal protection.
Availability
MQ1N8181US/TR is available at Aetrix Electronics and suitable for telecom line interface protection, aerospace data bus protection, and industrial Ethernet PHY protection requiring stable component supply and long-term obsolescence management.
Supply support for MQ1N8181US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and extended-temperature solutions.
The MQ1N8181US/TR belongs to Microsemi's legacy 1N81xx series of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option - especially in RF, avionics, and nuclear instrumentation signal paths.
FAQ
What is the clamping voltage of MQ1N8181US/TR at its rated peak pulse current?
The MQ1N8181US/TR has a maximum clamping voltage (VC) of 261 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and defines the upper voltage limit imposed on protected circuitry during surge events. The MQ1N8181US/TR achieves this while maintaining only 4 pF capacitance - a key differentiator versus higher-capacitance alternatives.
Is MQ1N8181US/TR suitable for bidirectional transient protection?
No - MQ1N8181US/TR is strictly unidirectional. For bidirectional protection, two MQ1N8181US/TR devices must be connected in anti-parallel (cathode-to-anode), as documented in Figure 5 of the Microsemi datasheet. This configuration doubles total capacitance to 8 pF but preserves low-clamp performance; it is not a drop-in replacement for a single bidirectional TVS.
Does MQ1N8181US/TR meet IEC61000-4-5 lightning surge standards?
Yes - MQ1N8181US/TR is rated for 150 W peak pulse power at 10/1000 µs, which corresponds to Level 3 (2 kV line-to-ground, 1 kV line-to-line) per IEC61000-4-5. Its hard-glass hermetic construction and Category 1 metallurgical bonds ensure robustness against repetitive lightning-induced surges in outdoor telecom and radar installations. The MQ1N8181US/TR datasheet explicitly cites secondary lightning protection capability.
What is the meaning of "MQ" in MQ1N8181US/TR?
The "MQ" prefix denotes JAN-class reliability qualification per MIL-PRF-19500, indicating that MQ1N8181US/TR is screened to military-grade standards including extended temperature testing, burn-in, and hermeticity verification. It is distinct from commercial-grade "1N8181US/TR" and carries enhanced screening documentation traceability. The MQ1N8181US/TR is intended for applications where failure modes must be rigorously excluded.
Can MQ1N8181US/TR be used in RoHS-compliant assemblies?
Yes - the "e3" suffix in MQ1N8181US/TR confirms RoHS compliance per Directive 2011/65/EU, with matte tin plating over copper leads and lead-free glass encapsulation. Microsemi explicitly states RoHS-compliant versions are available, and the MQ1N8181US/TR meets JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life). The MQ1N8181US/TR is fully compatible with lead-free reflow profiles up to 260 °C for 10 seconds.
MQ1N8181US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 261V
- Current - Peak Pulse (10/1000µs):
- 570mA
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MQ1N8181US/TR FAQ
1.How can I place an order for MQ1N8181US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MQ1N8181US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MQ1N8181US/TR reliable?
The price and inventory of MQ1N8181US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MQ1N8181US/TR is usually 5 days.
3.What payment methods are accepted for MQ1N8181US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MQ1N8181US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MQ1N8181US/TR?
MQ1N8181US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MQ1N8181US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MQ1N8181US/TR?
For technical support, including MQ1N8181US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MQ1N8181US/TR requirements.
6.How does Aetrix verify that MQ1N8181US/TR is sourced from the original manufacturer or authorized distributors?
All MQ1N8181US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MQ1N8181US/TR meets industry standards.
7.What is the process for return or replacement of MQ1N8181US/TR?
All MQ1N8181US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MQ1N8181US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MQ1N8181US/TR part is unused and in its original packaging.
Return procedure for MQ1N8181US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MQ1N8181US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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