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Microchip Technology MS1N8149US/TR
- Part No.:
- MS1N8149US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8149US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,047
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Product details
Overview
MS1N8149US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 6.8 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MS1N8149US/TR datasheet, MS1N8149US/TR pinout, MS1N8149US/TR application, or MS1N8149US/TR equivalent, this device is selected for ESD/EFT protection in RF front-ends, avionics data links, and radiation-hardened telemetry interfaces where low capacitance and hermetic reliability are mandatory.
Technical Context
The MS1N8149US/TR implements a unique dual-element structure: a TVS junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance-lowest among 150 W-rated TVS devices. Its hard-glass hermetic package eliminates voids and supports operation from –55 °C to +175 °C.
It delivers 11.7 A peak surge current (IPP) at 12.8 V clamping voltage (VC) under 10/1000 µs waveform, with 0.5 µA standby leakage (ID) at 6.8 V VWM and ±0.065 %/°C breakdown voltage temperature coefficient (αV(BR)).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.8 V - Maximum continuous reverse-biased operating voltage before conduction begins |
| VC @ IPP | 12.8 V at 11.7 A - Clamped voltage during 10/1000 µs surge, limiting downstream IC stress |
| CT | 4 pF - Enables use in >1 GHz RF signal paths without impedance disruption |
| PPP | 150 W - Sustains high-energy transients per IEC61000-4-5 Level 3 secondary lightning |
| TJ Range | –55 °C to +175 °C - Supports extended-temperature deployment in engine-mounted avionics |
| RθJA | 150 °C/W - Requires minimal PCB copper area for thermal management in sealed enclosures |
| ID @ VWM | 0.5 µA - Negligible leakage in battery-backed or low-power sensor circuits |
Pinout & Package
MS1N8149US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during positive surges | Connected to protected line (e.g., RS-422 A/B, RF antenna feed) |
| Cathode | Transient current return path to ground or rail | Marked by band; ties to system ground plane or negative rail for low-inductance path |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under thermal cycling or vacuum |
| Category 1 metallurgical bond | Meets MIL-STD-750 Method 2070 for die attach integrity in space-grade assemblies |
| Triple-layer passivation | Prevents surface leakage and ion migration in high-humidity or salt-fog environments |
| Lowest 150 W TVS capacitance | 4 pF enables direct placement on 50 Ω RF traces without matching network redesign |
| Radiation hardness | Inherently tolerant to TID ≥ 100 krad(Si) per MicroNote 050, suitable for LEO satellite payloads |
Applications
| Avionics Data Link Protection | Spacecraft Telemetry Interface |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B differential bus lines from induced lightning transients in aircraft fuselage wiring. IC Role / Device Role / Timing Role: Unidirectional TVS placed across each signal line to ground, clamping surges before receiver input stages. Use Value: 4 pF capacitance avoids signal rise-time degradation at 1 Mbps data rates; 12.8 V VC ensures logic-level compatibility with 5 V receivers. | Use Scenario: Shielding S-band telemetry downlink receivers from electrostatic discharge during launch vehicle separation events. IC Role / Device Role / Timing Role: Anode-to-RF-in, cathode-to-ground configuration on coaxial feedline input of LNA front-end. Use Value: Hermetic seal prevents outgassing-induced parameter shift in vacuum; 175 °C max TJ accommodates proximity to propulsion systems. |
| High-Frequency Radar Front-End | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Guarding GaN PA output stage against load mismatch reflections and ESD during antenna switching. IC Role / Device Role / Timing Role: TVS mounted directly at PA output port, shunting fast transients before harmonic filters. Use Value: 4 pF CT preserves VSWR < 1.25 up to 3 GHz; 150 W PPP handles reflected energy from 10 kW pulsed radar. | Use Scenario: Protecting gamma spectrometer preamplifier inputs from cable discharge events in reactor containment buildings. IC Role / Device Role / Timing Role: Low-leakage TVS (0.5 µA ID) placed between detector bias line and op-amp input. Use Value: Sub-microamp leakage avoids baseline drift in charge-integrating circuits; radiation hardness ensures stable gain over 20-year service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ6.8A | Surface-mount DO-214AB package; 65 pF capacitance; 1500 W PPP rating | Higher capacitance limits use to sub-100 MHz signals; suited for industrial power rails, not RF | Select when board space is constrained and RF performance is not required |
| 1N6105A | Axial-leaded, non-hermetic epoxy package; 10 pF CT; no radiation hardness documentation | Lacks Category 1 bond and voidless seal; unsuitable for space or high-reliability mil-aero | Choose only for commercial-grade cost-sensitive designs with ambient temp ≤ 125 °C |
Compared with SMCJ6.8A and 1N6105A, MS1N8149US/TR uniquely combines hermetic reliability, 4 pF capacitance, and radiation tolerance-making it irreplaceable in RF-critical, mission-critical deployments where failure is not an option.
Availability
MS1N8149US/TR is available at Aetrix Electronics and suitable for avionics data links, spacecraft telemetry interfaces, high-frequency radar front-ends, and nuclear instrumentation signal conditioning requiring stable component supply across extended product lifecycles.
Supply support for MS1N8149US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and high-temperature solutions.
The MS1N8149US/TR belongs to Microsemi's legacy 1N81xx TVS family, engineered specifically for ultra-low-capacitance transient suppression in mission-critical RF and telemetry systems where conventional TVS devices introduce unacceptable signal distortion or reliability risk.
FAQ
What is the clamping voltage of MS1N8149US/TR at its rated peak surge current?
The MS1N8149US/TR has a maximum clamping voltage (VC) of 12.8 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures protected circuitry remains within safe operating limits during transient events. The MS1N8149US/TR achieves this while maintaining only 4 pF capacitance-critical for preserving signal integrity in high-speed or RF applications.
Is MS1N8149US/TR suitable for bidirectional transient protection?
No, MS1N8149US/TR is unidirectional. For bidirectional protection, two MS1N8149US/TR devices must be connected in anti-parallel, as documented in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping and surge-handling capability in both polarities.
Does MS1N8149US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MS1N8149US/TR provides ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4. Its 4 pF capacitance and fast response enable effective suppression of contact and air-discharge events up to ±15 kV, while the hermetic construction ensures long-term compliance stability in harsh environments.
What is the maximum operating temperature range for MS1N8149US/TR?
The MS1N8149US/TR operates from –55 °C to +175 °C, verified per MIL-STD-750 Test Method 1037. This extended range supports deployment in engine compartments, space payloads, and nuclear facilities where ambient temperatures exceed commercial-grade limits. The MS1N8149US/TR maintains full electrical specifications across this entire range.
How does the internal series rectifier diode in MS1N8149US/TR reduce capacitance?
The MS1N8149US/TR integrates a rectifier diode in series and opposite polarity to the TVS junction. This arrangement blocks low-voltage AC coupling paths that contribute to parasitic capacitance, reducing total capacitance to 4 pF-less than one-third of typical 150 W TVS devices. This architecture is exclusive to Microsemi's voidless hermetic 1N81xx series and is physically realized within the single glass package.
MS1N8149US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.8V
- Voltage - Breakdown (Min):
- 7.79V
- Voltage - Clamping (Max) @ Ipp:
- 12.8V
- Current - Peak Pulse (10/1000µs):
- 11.7A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8149US/TR FAQ
1.How can I place an order for MS1N8149US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8149US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8149US/TR reliable?
The price and inventory of MS1N8149US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8149US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8149US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8149US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8149US/TR?
MS1N8149US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8149US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8149US/TR?
For technical support, including MS1N8149US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8149US/TR requirements.
6.How does Aetrix verify that MS1N8149US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8149US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8149US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8149US/TR?
All MS1N8149US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8149US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8149US/TR part is unused and in its original packaging.
Return procedure for MS1N8149US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8149US/TR Tags
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