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Microchip Technology MS1N8150US/TR
- Part No.:
- MS1N8150US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8150US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,844
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Product details
Overview
MS1N8150US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, features 4 pF capacitance, and has a 7.5 V working standoff voltage (VWM) with 13.5 V clamping voltage (VC) at 11.1 A peak current - ideal for ESD/EFT protection in RF front-ends and aerospace data links.
For engineers reviewing the MS1N8150US/TR datasheet, MS1N8150US/TR pinout, MS1N8150US/TR application, or MS1N8150US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass packaging, and compliance with IEC61000-4-2/4-4 standards for mission-critical analog and digital interfaces.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. Its hard-glass hermetic package enables stable performance across –55 °C to +175 °C junction temperature range without void formation or moisture ingress.
The device uses internal "Category 1" metallurgical bonds per MIL-STD-780, ensuring radiation hardness and long-term reliability under thermal cycling and mechanical shock. It supports secondary lightning protection per IEC61000-4-5 (select levels) and meets ESD immunity per MIL-STD-750 Method 1020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - maximum continuous reverse-biased operating voltage before conduction begins |
| V(BR) min | 8.65 V - guaranteed minimum breakdown voltage at 1 mA test current |
| VC @ IPP | 13.5 V at 11.1 A - clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| PPP | 150 W - peak pulse power handling capability under standard 10/1000 µs waveform |
| CT | 4 pF - total terminal capacitance at 0 V, enabling >1 GHz signal integrity in RF paths |
| TJ Range | –55 °C to +175 °C - extended operational range suitable for avionics and downhole electronics |
| RθJA | 150 °C/W - thermal resistance defining derating behavior on standard PCB mounting |
Pinout & Package
MS1N8150US/TR is housed in an axial-leaded, hermetically sealed voidless hard-glass package with tungsten slugs and cathode band polarity marking. Leads are RoHS-compliant matte tin-plated copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected circuit ground or low-side reference in unidirectional clamp configuration |
| Cathode | Negative terminal; marked with band | Connected to signal line or power rail requiring transient suppression; conducts during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture-induced parameter drift and ensures >20-year shelf life in harsh environments |
| Category 1 metallurgical bond | Enables qualification for space-grade and military applications per MIL-PRF-19500 |
| Triple-layer passivation | Prevents surface leakage and enhances stability under high humidity and ionizing radiation |
| Low 4 pF capacitance | Preserves signal integrity in >500 MHz analog video, GPS L1/L2, and high-speed serial links |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT burst immunity |
Applications
| RF Transceiver Front-End Protection | Aerospace Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and mixer inputs from induced transients in airborne radar systems. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between antenna port and low-noise amplifier input. Use Value: 4 pF capacitance avoids detuning of 1.2–1.4 GHz matching networks while clamping surges to ≤13.5 V. | Use Scenario: Safeguarding ARINC 429 receive inputs against coupling from adjacent high-power switching circuits. IC Role / Device Role / Timing Role: Standoff-rated transient suppressor on differential data lines with tight VWM tolerance. Use Value: 7.5 V VWM aligns with ARINC 429 logic thresholds; 150 W PPP handles coupled lightning-induced surges. |
| Downhole Telemetry Signal Lines | Military SATCOM Intermediate Frequency Stage |
Use Scenario: Shielding analog sensor outputs in oil/gas logging tools exposed to thermal cycling and gamma radiation. IC Role / Device Role / Timing Role: Hermetic TVS mounted directly at connector interface to prevent transient ingress. Use Value: –55 °C to +175 °C rating and radiation hardness per MicroNote 050 ensure uninterrupted operation at depth. | Use Scenario: Clamping IF signals between upconverter and filter stages in tactical SATCOM terminals. IC Role / Device Role / Timing Role: Low-capacitance shunt protector preserving group delay flatness across 70–140 MHz band. Use Value: 4 pF CT introduces <0.05 dB insertion loss at 140 MHz, avoiding phase distortion in QPSK modulation paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ7.5A | Surface-mount SMC package; 6.5 pF capacitance; 1500 W PPP rating; higher clamping ratio (VC/VWM = 1.9) | Designed for automated assembly and higher-energy surges; less suitable for RF-sensitive nodes | Select when board space is constrained and surge energy exceeds 150 W but RF bandwidth is not critical |
| 1N6105A | Axial-leaded DO-41; 100 W PPP; 15 pF capacitance; lower reliability classification (non-Category 1) | Commercial-grade alternative with reduced thermal margin and no radiation hardness | Select only for non-mission-critical industrial controls where cost outweighs lifetime reliability |
Compared with SMCJ7.5A and 1N6105A, MS1N8150US/TR uniquely combines hermetic sealing, Category 1 bonding, 4 pF capacitance, and 150 W rating - making it the sole choice for RF-critical, high-reliability deployments where parameter stability over temperature and radiation exposure is mandatory.
Availability
MS1N8150US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, aerospace data bus interfaces, and downhole telemetry systems requiring stable component supply across extended temperature and radiation environments.
Supply support for MS1N8150US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for defense, aerospace, and industrial markets.
The MS1N8150US/TR belongs to Microsemi's JANS-qualified 1N81xx series of hermetic TVS diodes, engineered specifically for applications demanding zero failure tolerance in extreme thermal, mechanical, and radiation environments.
FAQ
What is the clamping voltage of MS1N8150US/TR at its rated peak pulse current?
The MS1N8150US/TR has a maximum clamping voltage (VC) of 13.5 V at 11.1 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures downstream circuitry remains within safe operating limits during transient events. The MS1N8150US/TR achieves this with minimal voltage overshoot due to its low dynamic impedance and optimized junction design.
Is MS1N8150US/TR compliant with RoHS and qualified for space applications?
Yes, MS1N8150US/TR is RoHS compliant (e3 marking) and manufactured to JANS level per MIL-PRF-19500, including Category 1 internal metallurgical bonds and radiation hardness characterization per Microsemi MicroNote 050. Its voidless hermetic glass package meets outgassing and long-term reliability requirements for low-earth orbit missions.
How does the 4 pF capacitance of MS1N8150US/TR impact high-frequency circuit design?
The 4 pF capacitance of MS1N8150US/TR minimizes signal attenuation and phase shift in RF paths above 500 MHz, enabling use in GPS L1/L2 receivers, cellular front-ends, and high-speed serial links without retuning matching networks. This value is confirmed at 0 V bias and remains stable across temperature, unlike polymer-based TVS devices.
Can MS1N8150US/TR be used for bidirectional transient protection?
No - MS1N8150US/TR is unidirectional. For bidirectional protection, two MS1N8150US/TR units must be connected in anti-parallel, as documented in Figure 5 of the datasheet. This configuration doubles capacitance to 8 pF but retains low-clamp performance and hermetic reliability across both polarities.
What is the thermal derating behavior of MS1N8150US/TR above 25 °C ambient?
MS1N8150US/TR follows a linear derating curve from 100% rated power at 25 °C to 0% at 175 °C junction temperature, with thermal resistance RθJA = 150 °C/W. At 100 °C ambient, its steady-state power dissipation must be reduced to ~67% of 1.0 W average rating to maintain TJ ≤ 175 °C on standard FR-4 PCB mounting.
MS1N8150US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.5V
- Current - Peak Pulse (10/1000µs):
- 11.1A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8150US/TR FAQ
1.How can I place an order for MS1N8150US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8150US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8150US/TR reliable?
The price and inventory of MS1N8150US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8150US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8150US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8150US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8150US/TR?
MS1N8150US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8150US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8150US/TR?
For technical support, including MS1N8150US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8150US/TR requirements.
6.How does Aetrix verify that MS1N8150US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8150US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8150US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8150US/TR?
All MS1N8150US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8150US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8150US/TR part is unused and in its original packaging.
Return procedure for MS1N8150US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8150US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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