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Microchip Technology MS1N8151US/TR
- Part No.:
- MS1N8151US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8151US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,466
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Product details
Overview
MS1N8151US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode with 4 pF capacitance, 8.5 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonding, triple-layer passivation, and RoHS-compliant matte tin plating for high-reliability aerospace and defense applications requiring ESD/EFT protection per IEC61000-4-2/4-4.
For engineers reviewing the MS1N8151US/TR datasheet, MS1N8151US/TR pinout, MS1N8151US/TR application, or MS1N8151US/TR equivalent, this part delivers ultra-low capacitance TVS protection in a rugged axial-leaded glass package - critical for RF front-end, avionics data links, and radiation-hardened telemetry interfaces where failure tolerance and signal integrity are non-negotiable.
Technical Context
The MS1N8151US/TR integrates a unique rectifier diode in series and opposite polarity to the TVS junction to achieve 4 pF total capacitance - the lowest available for a 150 W rated TVS. Its hard-glass hermetic seal eliminates voids and supports operation from −55 °C to +175 °C junction temperature.
It is rated for 11.1 A peak impulse current (IPP) at 15.6 V clamping voltage (VC) under 10/1000 µs waveform, with 0.5 µA standby current (ID) at 8.5 V VWM, and exhibits a +0.073 %/°C breakdown voltage temperature coefficient (αVBR).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - Maximum continuous reverse voltage before leakage exceeds 0.5 µA; sets operating margin for 9–12 V signal lines. |
| VBR (min) | 9.50 V - Minimum breakdown voltage at 1 mA test current; ensures reliable clamping onset above VWM. |
| VC @ IPP | 15.6 V - Clamping voltage at 11.1 A surge; limits transient overvoltage seen by downstream ICs. |
| IPP | 11.1 A - Peak surge current survivable at 10/1000 µs; enables robust lightning-level secondary protection. |
| CT | 4 pF - Total capacitance at 0 V; preserves signal integrity up to ~2 GHz in RF/data line applications. |
| PPP | 150 W - Peak pulse power rating; supports repeated transients without thermal degradation. |
| RθJA | 150 °C/W - Junction-to-ambient thermal resistance; requires minimal PCB copper area for thermal management. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard glass case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈ 340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink during forward conduction | Connected to protected line; conducts only during positive surges when cathode is biased higher than anode. |
| Cathode | Transient current source during reverse clamping | Connected to ground or low-impedance return path; provides low-impedance shunt for negative-going transients. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 4 pF enables use in >1 GHz RF receivers and high-speed serial links without signal distortion. |
| Category 1 metallurgical bond | Internal bond qualified for space-grade reliability per MIL-PRF-19500; eliminates interfacial delamination under thermal cycling. |
| Triple-layer passivation | Hermetic glass + dual dielectric layers prevent moisture ingress and surface leakage in humid/harsh environments. |
| Hard-glass hermetic seal | Voidless construction prevents internal arcing and parameter drift over lifetime in vacuum or high-vacuum systems. |
Applications
| Avionics Data Links | Spacecraft Telemetry Interfaces |
|---|---|
Use Scenario: Protecting RS-422/RS-485 differential pairs in airborne mission computers exposed to induced lightning transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp on each line, placed immediately after connector entry to limit common-mode surges before receiver input. Use Value: 4 pF capacitance avoids skew or jitter in 10 Mbps+ differential signaling; 15.6 V clamping preserves receiver input range. | Use Scenario: Shielding CAN FD and MIL-STD-1553B bus nodes on LEO satellite payloads against single-event transients and launch-induced ESD. IC Role / Device Role / Timing Role: Standoff-rated TVS on bus lines with <0.5 µA leakage to avoid DC loading of high-impedance bus terminations. Use Value: −55 °C to +175 °C operation supports unheated payload bays; radiation hardness per MicroNote 050 ensures latch-up immunity. |
| High-Frequency Radar Front Ends | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Guarding LNA inputs in X-band radar receivers from antenna-coupled RF energy and electrostatic discharge. IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at SMA connector feedthrough to minimize stub length and preserve impedance match. Use Value: 4 pF capacitance maintains VSWR <1.2:1 up to 12 GHz; hermetic seal prevents outgassing in vacuum chamber testing. | Use Scenario: Protecting charge-sensitive amplifiers in gamma spectroscopy detectors from cable discharge events in high-radiation containment cells. IC Role / Device Role / Timing Role: Standoff-limited TVS on preamp input with 8.5 V VWM to avoid clipping low-level detector pulses (<10 mV). Use Value: 0.5 µA leakage ensures no baseline shift in femtoampere-level current measurement; 150 W rating absorbs multi-kV ESD bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ8.5A | Surface-mount DO-214AB package; 100 W rating; 10 pF capacitance; 13.6 V clamping at 12.3 A. | Higher capacitance limits use to ≤500 MHz; unsuitable for RF front ends but lower profile for dense PCBs. | Select when board space is constrained and RF bandwidth <500 MHz; not recommended for aerospace-grade hermeticity requirements. |
| 1N6105A | Axial-leaded glass package; 100 W rating; 5 pF capacitance; 12.3 V clamping at 8.1 A; commercial-grade reliability. | Lacks Category 1 bond and triple passivation; not qualified for space or nuclear environments. | Acceptable for industrial control panels with moderate ESD exposure; avoid where radiation hardness or long-term hermeticity is mandated. |
Compared with SMCJ8.5A and 1N6105A, the MS1N8151US/TR uniquely combines 4 pF capacitance, 150 W surge capability, and space-qualified Category 1 metallurgy - making it irreplaceable for RF-intensive, high-reliability systems where parameter stability over temperature, radiation, and lifetime is mandatory.
Availability
MS1N8151US/TR is available at Aetrix Electronics and suitable for avionics data links, spacecraft telemetry interfaces, high-frequency radar front ends, and nuclear instrumentation signal conditioning requiring stable component supply across extended temperature and radiation environments.
Supply support for MS1N8151US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The MS1N8151US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient suppression in environments where failure is not an option - including spaceflight, nuclear instrumentation, and military communications.
FAQ
What is the maximum working standoff voltage (VWM) for MS1N8151US/TR?
The MS1N8151US/TR has a maximum working standoff voltage (VWM) of 8.5 V at 25 °C. This value defines the highest continuous reverse-bias voltage the device can withstand while maintaining leakage current below 0.5 µA. It is selected to provide adequate margin above typical 5 V or 8 V logic and interface rails, ensuring reliable clamping only during transient events - a key requirement for protecting sensitive RF and telemetry circuits in the MS1N8151US/TR application space.
Does MS1N8151US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, the MS1N8151US/TR is specified for ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4. Its 4 pF capacitance and fast response enable effective suppression of 8 kV contact / 15 kV air-gap ESD events, while its 150 W peak pulse power rating handles repetitive 40 A EFT bursts. These capabilities are validated in Microsemi's characterization and referenced in the official datasheet - confirming suitability for MS1N8151US/TR deployment in certified medical, avionics, and industrial control systems.
Is MS1N8151US/TR radiation-hardened?
Yes, the MS1N8151US/TR is inherently radiation-hardened as described in Microsemi MicroNote 050. Its hard-glass hermetic construction, tungsten slug leads, and Category 1 metallurgical bond provide immunity to total ionizing dose (TID) and single-event effects (SEE) - enabling reliable operation in space, nuclear, and high-altitude environments. This radiation tolerance is a core design feature of the MS1N8151US/TR and differentiates it from commercial-grade TVS diodes.
What is the clamping voltage (VC) of MS1N8151US/TR at its rated surge current?
The MS1N8151US/TR has a maximum clamping voltage (VC) of 15.6 V at 11.1 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value represents the upper voltage limit imposed on the protected circuit during worst-case surge conditions. For example, in an MS1N8151US/TR-protected RS-422 line, this ensures downstream receivers see no more than 15.6 V - well within absolute maximum ratings of most interface ICs.
Can MS1N8151US/TR be used in bidirectional configurations?
Yes, the MS1N8151US/TR can be used in bidirectional configurations by placing two devices in anti-parallel - as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains low clamping and high surge capability. While the MS1N8151US/TR itself is unidirectional, this dual-device topology is a validated method for protecting AC-coupled or bidirectional signal lines such as MIL-STD-1553B or CAN FD buses - extending the utility of the MS1N8151US/TR beyond strictly unidirectional applications.
MS1N8151US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.5V
- Voltage - Clamping (Max) @ Ipp:
- 14.5V
- Current - Peak Pulse (10/1000µs):
- 10.3A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8151US/TR FAQ
1.How can I place an order for MS1N8151US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8151US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8151US/TR reliable?
The price and inventory of MS1N8151US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8151US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8151US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8151US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8151US/TR?
MS1N8151US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8151US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8151US/TR?
For technical support, including MS1N8151US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8151US/TR requirements.
6.How does Aetrix verify that MS1N8151US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8151US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8151US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8151US/TR?
All MS1N8151US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8151US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8151US/TR part is unused and in its original packaging.
Return procedure for MS1N8151US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8151US/TR Tags
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