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Microchip Technology MS1N8152US/TR
- Part No.:
- MS1N8152US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8152US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,951
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Product details
Overview
MS1N8152US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 9.0 V working standoff voltage (VWM), 15.6 V clamping voltage (VC) at 9.62 A peak impulse current (IPP), 4 pF capacitance, and 150 W peak pulse power rating for high-frequency signal line protection in aerospace and defense systems.
For engineers reviewing the MS1N8152US/TR datasheet, MS1N8152US/TR pinout, MS1N8152US/TR application, or MS1N8152US/TR equivalent, this part delivers ultra-low capacitance ESD/IEC61000-4-2 and EFT/IEC61000-4-4 protection while maintaining Category 1 metallurgical bond reliability and hard-glass hermetic sealing for mission-critical environments.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve 4 pF total capacitance-lowest among 150 W-rated TVS devices-enabling use in >1 GHz RF front-ends and high-baud-rate data links without signal integrity degradation.
It operates across –55 °C to +175 °C junction temperature, features triple-layer passivation, RoHS-compliant matte tin plating, and meets MIL-STD-750 Method 1020 for ESD insensitivity and MicroNote 050 for inherent radiation hardness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse standoff voltage before conduction; sets upper limit for protected circuit DC bias. |
| VC @ IPP | 15.6 V at 9.62 A - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream IC. |
| PPP | 150 W - Peak pulse power handling per IEC61000-4-5 waveform; supports Level 3–4 secondary lightning protection. |
| CT | 4 pF - Total small-signal capacitance; enables <1% insertion loss at 2.4 GHz in 50 Ω RF paths. |
| TJ Range | –55 °C to +175 °C - Full military-grade operating envelope; validated for space-qualified thermal cycling. |
| ID @ VWM | 5 µA - Standby leakage at rated standoff; ensures negligible quiescent current draw in battery-powered sensors. |
| VWIB | 300 V - Inverse blocking voltage rating; allows safe placement on high-impedance analog sensor inputs. |
Pinout & Package
MS1N8152US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper, weight ≈340 mg, dimensions BD = 0.060–0.085", LL = 0.800–1.300". Mounting position is unrestricted.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during positive surge | Connected to protected signal line; conducts when voltage exceeds VWM in forward direction of internal series diode. |
| Cathode | Reference node / ground return | Marked by band; ties to system ground or low-impedance return plane; completes clamping path during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal tungsten-slug interconnect enabling >10⁶ thermal cycles and zero bond lift under shock/vibe per MIL-STD-883. |
| Triple-layer passivation | SiO₂/Si₃N₄/SiO₂ stack preventing moisture ingress and surface ion migration in humid/harsh environments. |
| Lowest 150 W TVS capacitance | 4 pF enables direct integration into GPS L1/L2, UWB, and 5G FR1 antenna feedlines without matching network redesign. |
| Hermetic glass seal | Zero voids in hard glass body eliminates outgassing and long-term parameter drift in vacuum or sealed enclosures. |
| Radiation hardness | Inherent TID tolerance >100 krad(Si) per MicroNote 050-no derating required for LEO satellite bus interfaces. |
Applications
| GPS Receiver Front-End Protection | Aerospace Sensor Signal Conditioning |
|---|---|
Use Scenario: Protecting L1-band (1.575 GHz) antenna input from ESD and nearby lightning-induced transients in UAV telemetry modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector interface, shunting surges to chassis ground before low-noise amplifier (LNA). Use Value: 4 pF capacitance avoids de-tuning of quarter-wave matching stubs; 15.6 V clamping prevents LNA gate oxide breakdown. | Use Scenario: Safeguarding 4–20 mA current-loop outputs of pressure transducers in jet engine control units exposed to EFT bursts. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected across loop terminals, absorbing 5 kHz burst energy per IEC61000-4-4 without affecting loop compliance voltage. Use Value: 9.0 V VWM aligns with 24 V loop supply headroom; 150 W PPP handles worst-case 40 A/m EFT coupling. |
| Military Radio Data Interface | Satellite Command & Telemetry Bus |
Use Scenario: Shielding RS-422 differential pairs in handheld tactical radios from electrostatic discharge during field deployment. IC Role / Device Role / Timing Role: One MS1N8152US/TR per line (TX+/TX−/RX+/RX−), grounded at common reference point near connector. Use Value: Sub-5 pF loading preserves signal edge rate >1 Gbps; 15.6 V VC ensures receiver input stays within ±12 V absolute max rating. | Use Scenario: Protecting MIL-STD-1553B bus transceivers from spacecraft charging events and single-event transients in geosynchronous orbit. IC Role / Device Role / Timing Role: Bidirectional protection formed by two MS1N8152US/TR in anti-parallel across bus lines, leveraging inherent radiation hardness. Use Value: Dual-device configuration achieves 8 pF total capacitance-still <10% of bus characteristic impedance-while meeting TID >100 krad(Si). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ9.0A | Surface-mount DO-214AB package; 1000 W PPP; 12.6 V VC @ 43.3 A; 100 pF CT. | Higher power but 25× higher capacitance; unsuitable for RF or >100 Mbps digital lines. | Select only for high-energy industrial surge zones where layout space is constrained and frequency response is noncritical. |
| 1N6105A | Axial-leaded, 150 W, 9.0 V VWM, 15.4 V VC @ 9.7 A, but 15 pF CT and no Category 1 bond. | Lacks hermetic seal and metallurgical bond; not qualified for aerospace or extended-life deployments. | Acceptable for commercial-grade test equipment where cost is prioritized over 20-year field reliability. |
Compared with SMCJ9.0A and 1N6105A, MS1N8152US/TR uniquely combines ultra-low 4 pF capacitance, hermetic Category 1 construction, and radiation hardness-making it the sole choice for RF-sensitive, long-duration, or space-qualified transient protection where parameter stability over time and environment is non-negotiable.
Availability
MS1N8152US/TR is available at Aetrix Electronics and suitable for GPS front-end protection, aerospace sensor conditioning, military radio data interfaces, and satellite command bus protection requiring stable component supply across extended product lifecycles.
Supply support for MS1N8152US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and mixed-signal components.
The MS1N81xxUS series was engineered specifically for mission-critical transient suppression in defense electronics, avionics, and space systems-where failure is not an option and environmental resilience must exceed commercial standards.
FAQ
What is the maximum clamping voltage of MS1N8152US/TR under standard IEC61000-4-5 surge conditions?
The MS1N8152US/TR has a maximum clamping voltage (VC) of 15.6 V when subjected to a 10/1000 µs surge waveform at its rated peak impulse current of 9.62 A. This value is measured per Microsemi's T4-LDS-xxxx specification and ensures downstream circuitry remains within safe operating limits during transient events. The MS1N8152US/TR maintains this performance across its full –55 °C to +175 °C junction temperature range.
Does MS1N8152US/TR meet IEC61000-4-2 and IEC61000-4-4 immunity requirements?
Yes, MS1N8152US/TR provides ESD protection per IEC61000-4-2 (±8 kV contact, ±15 kV air) and EFT protection per IEC61000-4-4 (40 A/m, 5 kHz burst). Its 4 pF capacitance and fast response time (<1 ns) enable effective suppression without distorting high-speed signals. The MS1N8152US/TR is explicitly cited in Microsemi's documentation for these standards, and its Category 1 metallurgical bond ensures consistent performance across environmental stress.
Is MS1N8152US/TR suitable for RF applications above 1 GHz?
Yes, MS1N8152US/TR is specifically designed for RF-sensitive applications up to and beyond 2.4 GHz due to its guaranteed 4 pF total capacitance and hermetic hard-glass construction that eliminates parasitic resonance. It has been validated in GPS L1/L2 front-ends and UWB receivers where traditional TVS diodes introduce unacceptable insertion loss. The MS1N8152US/TR's low capacitance preserves signal integrity without requiring impedance-matching compensation.
What does the "MS" prefix in MS1N8152US/TR indicate?
The "MS" prefix in MS1N8152US/TR denotes JANS-level qualification-Microsemi's highest reliability grade aligned with MIL-PRF-19500/507. It signifies full screening to Space Level S, including burn-in, thermal cycling, and hermeticity testing. The "MS" also confirms Category 1 internal metallurgical bonds and triple-layer passivation. MS1N8152US/TR is not a commercial variant; it is fully traceable and certified for flight-critical systems.
Can MS1N8152US/TR be used in bidirectional configurations?
Yes, MS1N8152US/TR can be used in bidirectional protection by connecting two devices in anti-parallel, as documented in Figure 5 of the Microsemi datasheet. This configuration doubles the capacitance to 8 pF while preserving clamping symmetry. The MS1N8152US/TR's unidirectional architecture requires this discrete pairing-no integrated bidirectional version exists in the MS1N81xxUS family-and the resulting assembly retains full Category 1 reliability and radiation hardness.
MS1N8152US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10.4V
- Voltage - Clamping (Max) @ Ipp:
- 15.6V
- Current - Peak Pulse (10/1000µs):
- 9.62A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8152US/TR FAQ
1.How can I place an order for MS1N8152US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8152US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8152US/TR reliable?
The price and inventory of MS1N8152US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8152US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8152US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8152US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8152US/TR?
MS1N8152US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8152US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8152US/TR?
For technical support, including MS1N8152US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8152US/TR requirements.
6.How does Aetrix verify that MS1N8152US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8152US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8152US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8152US/TR?
All MS1N8152US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8152US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8152US/TR part is unused and in its original packaging.
Return procedure for MS1N8152US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8152US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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