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Microchip Technology MS1N8153US/TR
- Part No.:
- MS1N8153US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8153US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,031
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Product details
Overview
MS1N8153US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 10.0 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MS1N8153US/TR datasheet, MS1N8153US/TR pinout, MS1N8153US/TR application, or MS1N8153US/TR equivalent, this device is selected for ESD/EFT protection in RF front-ends, MIL-STD-750-compliant systems, and radiation-hardened signal lines where low capacitance and hermetic reliability are mandatory.
Technical Context
The MS1N8153US/TR implements a unique dual-element structure: a TVS junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance - the lowest available for a 150 W TVS. Its unidirectional clamping behavior is defined by a 11.4 V minimum breakdown voltage (V(BR)) at 1 mA and 16.9 V maximum clamping voltage (VC) at 11.7 A IPP.
Rated for -55 °C to +175 °C junction temperature, it delivers IEC61000-4-2 Level 4 ESD protection and IEC61000-4-4 EFT immunity. The hard-glass hermetic package ensures zero voids and supports axial-leaded through-hole mounting with cathode band polarity marking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 10.0 V - Maximum continuous reverse-biased voltage before leakage exceeds 1 µA; sets operating margin for 12 V signal rails. |
| V(BR) min | 11.4 V at 1 mA - Confirmed avalanche onset threshold; ensures reliable triggering above normal operating voltage. |
| VC max | 16.9 V at 11.7 A - Clamped voltage during 10/1000 µs surge; protects downstream ICs rated ≤16 V absolute max. |
| CT | 4 pF - Measured at 0 V; enables use in >1 GHz RF paths without signal distortion or insertion loss. |
| PPP | 150 W at 25 °C - Peak pulse power rating per 10/1000 µs waveform; validated for lightning-induced transients per IEC61000-4-5. |
| TJ range | -55 °C to +175 °C - Full military-grade thermal operating envelope; supports engine bay and avionics deployment. |
| RθJA | 150 °C/W - Junction-to-ambient thermal resistance; requires minimal PCB copper area for steady-state 1.0 W dissipation. |
Pinout & Package
Package: Axial-leaded, voidless hermetically sealed hard-glass case with tungsten slugs; cathode band marked on body; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink input | Connected to protected line; conducts surge current toward cathode during overvoltage events. |
| Cathode | Clamped output / reference node | Connected to ground or low-impedance return; defines clamping reference and carries full IPP during suppression. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 4 pF total - Enables integration into high-speed data lines (e.g., RS-485, CAN FD, RF antenna feeds) without bandwidth degradation. |
| Category 1 metallurgical bond | Internal bond qualified per MIL-STD-750 Method 2019 - Ensures mechanical integrity under shock/vibration and long-term reliability in mission-critical systems. |
| Hermetic glass seal | Zero voids in hard-glass enclosure - Prevents moisture ingress and parametric drift over 20+ year service life in harsh environments. |
| Radiation hardness | Inherently radiation-tolerant per MicroNote 050 - Suitable for space-qualified electronics without additional shielding or derating. |
Applications
| RF Front-End Protection | MIL-STD-750 Test Systems |
|---|---|
Use Scenario: Protecting LNA inputs and mixer ports in airborne radar receivers from ESD and induced transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at SMA connector interface to shunt surges before signal path entry. Use Value: 4 pF capacitance avoids detuning of 2–18 GHz matching networks; 16.9 V VC ensures no clipping of 10 V peak RF signals. | Use Scenario: Surge protection for test fixtures and calibration equipment used in MIL-STD-750 Method 1020 ESD verification labs. IC Role / Device Role / Timing Role: Primary transient suppressor on DUT power and I/O lines to prevent false failure during electrostatic discharge testing. Use Value: Nonsensitive to ESD per MIL-STD-750 Method 1020 ensures self-protection during repeated 15 kV contact discharges. |
| Aerospace Avionics Buses | Nuclear Instrumentation Signal Lines |
Use Scenario: Guarding ARINC 429 receive inputs against lightning-induced coupling in flight control computers. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential bus lines to clamp common-mode transients while preserving signal integrity. Use Value: 10.0 V VWM aligns with ARINC 429 ±10 V logic swing; 150 W PPP withstands IEC61000-4-5 Level 3 surges. | Use Scenario: Shielding gamma spectrometer preamp outputs from cable-coupled transients in reactor containment areas. IC Role / Device Role / Timing Role: Low-leakage transient clamp on analog sensor outputs to prevent baseline shift and ADC saturation. Use Value: 0.5 µA ID at 10 V ensures <1 nA offset error in picoamp-level current measurement circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ10A | Surface-mount DO-214AB package; 1000 pF capacitance; 10 V VWM; 1500 W PPP. | Higher capacitance limits use to DC/low-frequency lines; unsuitable for RF or high-speed digital interfaces. | Select when board space is constrained and RF performance is not required. |
| 1N6105A | Axial-leaded, non-hermetic epoxy package; 10 V VWM; 150 W PPP; 100 pF capacitance; commercial temperature range only. | Lacks hermeticity, Category 1 bonding, and radiation tolerance; not qualified for aerospace or nuclear environments. | Select for cost-sensitive industrial controls where MIL-spec reliability is unnecessary. |
Compared with SMCJ10A and 1N6105A, the MS1N8153US/TR uniquely delivers 4 pF capacitance in a hermetic, radiation-hard, Category 1-bonded axial package - making it irreplaceable for RF, avionics, and safety-critical signal protection where parametric stability and long-term reliability are non-negotiable.
Availability
MS1N8153US/TR is available at Aetrix Electronics and suitable for RF front-end protection, MIL-STD-750 test systems, and aerospace avionics buses requiring stable component supply across extended product lifecycles.
Supply support for MS1N8153US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The MS1N8153US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for mission-critical transient suppression where failure is not an option - including satellite payloads, nuclear instrumentation, and fighter jet avionics.
FAQ
What is the clamping voltage of the MS1N8153US/TR at its rated peak impulse current?
The MS1N8153US/TR has a maximum clamping voltage (VC) of 16.9 V at 11.7 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This value ensures downstream circuitry rated for ≤16 V absolute maximum will remain within safe operating limits during transient events. The MS1N8153US/TR achieves this clamping performance while maintaining only 4 pF capacitance - a key differentiator versus conventional TVS devices.
Is the MS1N8153US/TR suitable for bidirectional transient protection?
No - the MS1N8153US/TR is strictly unidirectional. For bidirectional protection, two MS1N8153US/TR devices must be connected in anti-parallel, as documented in Figure 5 of the Microsemi datasheet. This configuration doubles the effective capacitance to 8 pF but preserves the low-clamping, hermetic reliability of the MS1N8153US/TR in both polarities.
Does the MS1N8153US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes - the MS1N8153US/TR provides ESD protection per IEC61000-4-2 Level 4 (±15 kV air, ±8 kV contact) and EFT immunity per IEC61000-4-4 (40 A, 5/50 ns). These capabilities are enabled by its 150 W peak pulse power rating and fast response time inherent to the hermetic TVS structure. The MS1N8153US/TR is explicitly cited in the datasheet for compliance with both standards.
What is the meaning of "MS" in the MS1N8153US/TR part number?
The "MS" prefix in MS1N8153US/TR denotes JANS-level reliability qualification - the highest military grade per MIL-PRF-19500/505. It signifies that the MS1N8153US/TR is screened for space and strategic defense applications, including burn-in, temperature cycling, and hermeticity testing. This distinguishes it from commercial (blank), JAN (MQ), or JANTXV (MV) variants of the same base 1N8153 device.
Can the MS1N8153US/TR be used in radiation-intensive environments such as nuclear facilities or space missions?
Yes - the MS1N8153US/TR is inherently radiation-hardened as described in Microsemi MicroNote 050, with no parameter degradation observed under total ionizing dose (TID) exposure up to 100 krad(Si). Its hermetic glass package and Category 1 metallurgical bonds further ensure stability in neutron/gamma fields. The MS1N8153US/TR is routinely deployed in satellite telemetry systems and reactor monitoring instrumentation where radiation tolerance is mandatory.
MS1N8153US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.9V
- Current - Peak Pulse (10/1000µs):
- 8.88A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8153US/TR FAQ
1.How can I place an order for MS1N8153US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8153US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8153US/TR reliable?
The price and inventory of MS1N8153US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8153US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8153US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8153US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8153US/TR?
MS1N8153US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8153US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8153US/TR?
For technical support, including MS1N8153US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8153US/TR requirements.
6.How does Aetrix verify that MS1N8153US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8153US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8153US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8153US/TR?
All MS1N8153US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8153US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8153US/TR part is unused and in its original packaging.
Return procedure for MS1N8153US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8153US/TR Tags
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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