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Microchip Technology MS1N8154US/TR
- Part No.:
- MS1N8154US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8154US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,337
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Product details
Overview
MS1N8154US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 11.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF, datacom, and aerospace interfaces without signal integrity degradation.
For engineers reviewing the MS1N8154US/TR datasheet, MS1N8154US/TR pinout, MS1N8154US/TR application, or MS1N8154US/TR equivalent, key selection criteria include clamping voltage (18.2 V at 8.24 A), low-leakage standby current (1 µA max at 11.0 V), Category 1 metallurgical bond reliability, and axial-leaded "A" package compatibility with thru-hole PCB assembly.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest available for a 150 W-rated unidirectional TVS. Its hard-glass hermetic seal and tungsten slug construction ensure robustness under thermal cycling and radiation exposure per MicroNote 050.
Rated for -55°C to +175°C junction temperature, it supports IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity levels. The device operates as a voltage-clamped shunt protector, activating above 12.4 V breakdown (V(BR)) with 0.081 %/°C temperature coefficient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11.0 V - Maximum continuous reverse voltage before leakage exceeds 1 µA; sets operating margin for 12 V signal lines. |
| V(BR) | 12.4 V @ 1 mA - Avalanche onset voltage; defines precise turn-on threshold for transient clamping. |
| VC | 18.2 V @ 8.24 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on downstream ICs. |
| PPP | 150 W - Peak pulse power handling at 25°C; enables protection against IEC61000-4-5 Level 3 surges. |
| CT | 4 pF - Total capacitance at 0 V; preserves signal integrity up to ~2 GHz in high-speed data paths. |
| TJ Range | -55°C to +175°C - Wide junction temperature range supports operation in avionics, downhole, and military environments. |
| RθJA | 150 °C/W - Thermal resistance to ambient; requires minimal heatsinking on standard FR-4 PCBs. |
Pinout & Package
MS1N8154US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected signal line; conducts only during reverse-biased clamping events. |
| Cathode | Reference node tied to system ground or return plane | Marked by band; establishes polarity-sensitive clamping direction for unidirectional protection. |
Key Features
| Feature | Design Value |
|---|---|
| Lowest-capacitance 150 W TVS | 4 pF enables RF front-end and USB 3.0+ protection without bandwidth loss or impedance mismatch. |
| Category 1 metallurgical bond | Internal bond structure qualified for high-reliability applications including space and defense systems. |
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risks over 20+ year service life. |
| Triple-layer passivation | Enhances surface insulation and prevents leakage path formation under humid or contaminated conditions. |
| Radiation-hardened design | Inherent tolerance to total ionizing dose (TID) per Microsemi MicroNote 050 - no derating required. |
Applications
| RF Transceiver Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band antenna feedlines and transceiver I/O pins from lightning-induced surges and ESD events. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between RF port and ground, activated only during overvoltage transients. Use Value: 4 pF capacitance avoids detuning of matching networks; 18.2 V clamping ensures PA and LNA remain within safe operating area. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B differential receivers against induced transients on aircraft wiring harnesses. IC Role / Device Role / Timing Role: Standoff-rated TVS on each signal line, referenced to chassis ground to clamp common-mode surges. Use Value: -55°C to +175°C operation survives engine bay thermal extremes; hermetic seal resists condensation and salt fog. |
| High-Speed Serial Link ESD Guard | Downhole Oilfield Sensor Interface |
Use Scenario: ESD protection for 10 GbE SFP+ cage connectors and backplane traces exposed to human handling. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at connector entry point to minimize stub length. Use Value: 1 µA max ID at 11.0 V prevents DC loading of AC-coupled links; 150 W PPP handles multiple contact discharges. | Use Scenario: Transient suppression on pressure/temperature sensor outputs in deep-well drilling tools operating at 175°C ambient. IC Role / Device Role / Timing Role: Primary overvoltage clamp on analog output lines feeding downhole telemetry systems. Use Value: 175°C max TJ rating eliminates need for external thermal derating; RoHS-compliant plating withstands H2S-rich environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ11A | Surface-mount DO-214AB package; 100 W PPP; 17.0 V VC @ 10.3 A; 100 pF CT | Higher capacitance limits use in >100 MHz applications; suitable for board-level surge suppression where space is constrained. | Select when SMT assembly is required and RF performance is not critical. |
| 1N6105A | Axial-leaded DO-41; 150 W PPP; 18.2 V VC @ 8.2 A; 100 pF CT; commercial-grade reliability | Lacks Category 1 bond and hermetic seal; not rated for aerospace or extended temperature operation. | Choose for cost-sensitive industrial controls where full Microsemi reliability qualification is unnecessary. |
Compared with SMCJ11A and 1N6105A, MS1N8154US/TR uniquely combines 4 pF capacitance, 150 W pulse rating, and hermetic Category 1 construction - making it the only option for mission-critical RF and high-temperature transient protection where signal fidelity and long-term reliability are non-negotiable.
Availability
MS1N8154US/TR is available at Aetrix Electronics and suitable for RF transceiver protection, avionics interface hardening, and downhole sensor conditioning requiring stable component supply across extended temperature and radiation-exposed environments.
Supply support for MS1N8154US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specialized in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The MS1N81xxUS series was engineered specifically for ultra-low-capacitance transient suppression in high-frequency, high-integrity systems - addressing ESD, EFT, and secondary lightning threats without compromising signal path performance.
FAQ
What is the clamping voltage of MS1N8154US/TR and how is it measured?
The clamping voltage (VC) of MS1N8154US/TR is 18.2 V, measured at a peak impulse current (IPP) of 8.24 A using the standardized 10/1000 µs double-exponential waveform. This value represents the maximum voltage that appears across the device during a surge event, directly limiting stress on protected circuitry. MS1N8154US/TR maintains this clamping performance across its full operating temperature range (-55°C to +175°C), with no derating required.
Is MS1N8154US/TR suitable for bidirectional transient protection?
MS1N8154US/TR is unidirectional by design and must be used in anti-parallel pairs to achieve bidirectional protection, as shown in Figure 5 of the Microsemi datasheet. Using two MS1N8154US/TR devices in anti-parallel doubles the effective capacitance to 8 pF but retains the same 18.2 V clamping level in both polarities. A single MS1N8154US/TR cannot clamp positive-going transients on grounded lines.
Does MS1N8154US/TR meet RoHS requirements?
Yes, MS1N8154US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature. Its axial leads feature matte tin plating over copper, fully satisfying EU Directive 2011/65/EU. The hermetic glass package contains no lead-based solder or hazardous substances, and the device is certified to JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life).
What is the meaning of "Category 1 metallurgical bond" in MS1N8154US/TR?
"Category 1 metallurgical bond" refers to Microsemi's proprietary internal bonding process that meets MIL-PRF-19500 Class B and MIL-STD-750 Test Method 2015 qualification. For MS1N8154US/TR, this bond ensures zero interfacial voids, superior thermal cycling endurance (>1000 cycles), and immunity to wire bond lift-off under mechanical shock - a requirement for flight-critical avionics and satellite systems.
Can MS1N8154US/TR replace standard TVS diodes like P6KE11A in existing designs?
MS1N8154US/TR is not a drop-in replacement for P6KE11A due to fundamental differences: it uses an axial "A" package (vs. DO-15), has 4 pF capacitance (vs. ~200 pF), and features hermetic sealing (vs. epoxy). While both offer 11 V standoff, MS1N8154US/TR requires layout review for lead spacing and thermal relief. Its ultra-low capacitance makes it unsuitable for low-frequency power rail protection but ideal for RF/data line applications where P6KE11A would degrade signal integrity.
MS1N8154US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.4V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 8.24A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8154US/TR FAQ
1.How can I place an order for MS1N8154US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8154US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8154US/TR reliable?
The price and inventory of MS1N8154US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8154US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8154US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8154US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8154US/TR?
MS1N8154US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8154US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8154US/TR?
For technical support, including MS1N8154US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8154US/TR requirements.
6.How does Aetrix verify that MS1N8154US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8154US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8154US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8154US/TR?
All MS1N8154US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8154US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8154US/TR part is unused and in its original packaging.
Return procedure for MS1N8154US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8154US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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