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Microchip Technology MS1N8161US/TR
- Part No.:
- MS1N8161US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8161US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,571
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Product details
Overview
MS1N8161US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 22.0 V working standoff voltage (VWM), 37.4 V peak clamping voltage (VC) at 300 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for high-frequency ESD/EFT protection in high-reliability systems.
For engineers reviewing the MS1N8161US/TR datasheet, MS1N8161US/TR pinout, MS1N8161US/TR application, or MS1N8161US/TR equivalent, this device delivers ultra-low capacitance TVS protection for telecom interfaces, RF front-ends, and aerospace data links where failure tolerance and signal integrity are critical.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve 4 pF total capacitance-lowest available for a 150 W rated device-enabling use in >1 GHz signal paths without impedance disruption.
It features Category 1 internal metallurgical bonds, voidless hard-glass hermetic sealing, and RoHS-compliant matte tin plating on axial leads, supporting operation from –55 °C to +175 °C junction temperature with 150 °C/W thermal resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 22.0 V maximum continuous reverse standoff voltage - defines max DC/peak AC voltage before conduction begins |
| VC @ IPP | 37.4 V clamping voltage at 300 A peak impulse current - limits transient-induced voltage stress on protected ICs |
| CT | 4 pF total capacitance at 0 V - preserves signal integrity in high-speed serial links and RF circuits |
| PPP | 150 W peak pulse power at 10/1000 µs waveform - sustains lightning-level surges per IEC61000-4-5 Level 3 |
| ID @ VWM | 0.5 µA max standby leakage - minimizes power loss in always-on monitoring circuits |
| TJ Range | –55 °C to +175 °C operating junction temperature - qualified for aerospace, downhole, and military environments |
| RθJA | 150 °C/W thermal resistance - requires minimal PCB copper area for thermal management in sealed enclosures |
Pinout & Package
MS1N8161US/TR uses an axial-leaded "A" package with cathode band marking. Hermetically sealed voidless hard glass case includes tungsten slugs for mechanical robustness and thermal stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink terminal during reverse-bias clamping | Connected to protected line; conducts surge current to ground when V > VWM |
| Cathode | Reference terminal with polarity band marking | Connected to system ground; establishes unidirectional clamping direction and enables precise layout referencing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 4 pF enables protection of >1 GHz RF amplifiers and high-speed SerDes without signal degradation |
| Category 1 metallurgical bond | Internal bond structure qualified for space-grade reliability and radiation hardness per MicroNote 050 |
| Voidless hermetic seal | Hard-glass construction prevents moisture ingress and parametric drift over 20+ year field life |
| Low leakage | 0.5 µA ID at 22 V supports battery-powered sensor nodes with multi-year standby life |
| IEC61000-4-2/4-4/4-5 compliance | Validated for ±15 kV contact / ±20 kV air ESD, 4 kV EFT bursts, and 2 kV lightning surges (Level 3) |
Applications
| Telecom Line Interface | RF Front-End Protection |
|---|---|
Use Scenario: Protecting T1/E1 line drivers and receivers against induced surges and ESD events in central office equipment. IC Role / Device Role / Timing Role: Unidirectional TVS placed between line transformer secondary and transceiver IC input. Use Value: 4 pF capacitance avoids degrading 2.048 MHz signal integrity while clamping transients to ≤37.4 V. | Use Scenario: Safeguarding LNA inputs in satellite communication uplink modules exposed to handling ESD and antenna-coupled transients. IC Role / Device Role / Timing Role: First-stage protection directly at SMA connector feedpoint before matching network. Use Value: Sub-10 pF capacitance preserves noise figure and gain flatness across 1.2–2.4 GHz band. |
| Aerospace Data Bus | Industrial Sensor Signal Conditioning |
Use Scenario: Securing MIL-STD-1553B bus stubs in avionics cabinets against lightning-induced coupling and maintenance ESD. IC Role / Device Role / Timing Role: Point-of-entry TVS on each bus node, mounted with shortest possible trace length. Use Value: –55 °C to +175 °C operation and Category 1 bonding ensure reliability across flight envelope and storage conditions. | Use Scenario: Shielding 4–20 mA transmitter outputs in oilfield pressure transmitters from 4 kV EFT bursts and cable discharge events. IC Role / Device Role / Timing Role: Series-connected TVS on loop-powered analog output path with low-leakage biasing. Use Value: 0.5 µA leakage prevents offset error in precision current loops; 150 W rating handles long-duration surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ22A | 3.5× higher capacitance (15 pF), lower PPP (600 W but derated to 100 W at 100 °C), SMC package | Not suitable for >500 MHz RF paths; better for general-purpose board-level protection | Select SMBJ22A only if PCB space is constrained and RF performance is not required |
| 1.5KE22A | Higher clamping (41.5 V), larger DO-201 package, 4.5 pF capacitance, same 150 W rating | Compatible with legacy through-hole layouts but lacks Category 1 bonding and radiation hardness | Choose 1.5KE22A for cost-sensitive industrial designs where hermeticity and radiation tolerance are unnecessary |
Compared with SMBJ22A and 1.5KE22A, MS1N8161US/TR uniquely combines 4 pF capacitance, Category 1 reliability, and hermetic sealing-making it the only option for mission-critical RF and aerospace signal-line protection where parametric stability over temperature and lifetime is non-negotiable.
Availability
MS1N8161US/TR is available at Aetrix Electronics and suitable for telecom line interface protection, RF front-end safeguarding, aerospace data bus hardening, and industrial sensor signal conditioning requiring stable component supply across extended product lifecycles.
Supply support for MS1N8161US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The MS1N8161US/TR belongs to Microsemi's JANS-qualified TVS family designed specifically for spaceflight, avionics, and nuclear instrumentation applications demanding zero-failure tolerance and guaranteed parametric stability over extreme environmental stress.
FAQ
What is the clamping voltage of MS1N8161US/TR at its rated peak impulse current?
The MS1N8161US/TR has a maximum clamping voltage (VC) of 37.4 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value ensures downstream circuitry remains within safe operating voltage limits during transient events, and is measured per JEDEC standards with controlled test fixtures to eliminate parasitic effects.
Is MS1N8161US/TR suitable for bidirectional transient protection?
No, MS1N8161US/TR is strictly unidirectional. For bidirectional protection, two MS1N8161US/TR devices must be connected in anti-parallel per Figure 5 in the datasheet-resulting in doubled capacitance (8 pF) but maintaining low-clamp performance across both polarities. This configuration is validated for IEC61000-4-2/4-4 compliance.
What does the "MS" prefix in MS1N8161US/TR indicate?
The "MS" prefix denotes Microsemi's JANS-qualified military specification grade, indicating full compliance with MIL-PRF-19500/533 requirements-including screening, testing, and documentation traceability for space and defense applications. It confirms Category 1 internal metallurgical bonds, hermetic sealing, and radiation hardness per MicroNote 050.
Does MS1N8161US/TR require derating at elevated ambient temperatures?
Yes, MS1N8161US/TR must be derated above 25 °C ambient per the Figure 3 derating curve. At 100 °C ambient, its peak pulse power drops to approximately 75 W (50% of 150 W rating), due to thermal resistance of 150 °C/W and junction temperature limit of +175 °C. Layout with adequate copper pour is essential for sustained surge handling.
How is the 4 pF capacitance of MS1N8161US/TR achieved without compromising surge capability?
The 4 pF capacitance in MS1N8161US/TR results from an integrated series rectifier diode placed anti-parallel to the main TVS junction-a proprietary architecture that decouples capacitance from avalanche area. This allows full 150 W surge capability while maintaining ultra-low CT, unlike conventional planar TVS structures where capacitance scales with power rating.
MS1N8161US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 22V
- Voltage - Breakdown (Min):
- 25.7V
- Voltage - Clamping (Max) @ Ipp:
- 37.4V
- Current - Peak Pulse (10/1000µs):
- 4.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8161US/TR FAQ
1.How can I place an order for MS1N8161US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8161US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8161US/TR reliable?
The price and inventory of MS1N8161US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8161US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8161US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8161US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8161US/TR?
MS1N8161US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8161US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8161US/TR?
For technical support, including MS1N8161US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8161US/TR requirements.
6.How does Aetrix verify that MS1N8161US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8161US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8161US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8161US/TR?
All MS1N8161US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8161US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8161US/TR part is unused and in its original packaging.
Return procedure for MS1N8161US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8161US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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