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Microchip Technology MS1N8162US/TR
- Part No.:
- MS1N8162US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8162US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,699
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Product details
Overview
MS1N8162US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 25.0 V working standoff voltage (VWM), 37.4 V maximum clamping voltage (VC) at 3.60 A peak impulse current (IPP), 4 pF capacitance, and 150 W peak pulse power rating at 10/1000 µs. It employs a series-connected rectifier diode to achieve ultra-low capacitance and is rated for high-reliability aerospace and industrial signal-line protection.
For engineers reviewing the MS1N8162US/TR datasheet, MS1N8162US/TR pinout, MS1N8162US/TR application, or MS1N8162US/TR equivalent, this device is selected for ESD/EFT protection per IEC61000-4-2/4-4, secondary lightning surge suppression, and high-frequency data line safeguarding where <4 pF capacitance and Category 1 metallurgical bonding are mandatory.
Technical Context
This TVS uses a unique dual-element architecture: a Zener-like avalanche junction in series with a reverse-oriented rectifier diode, enabling bidirectional blocking while maintaining unidirectional conduction and minimizing total capacitance to 4 pF. Its hard-glass hermetic package eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device delivers 150 W peak pulse power under standard 10/1000 µs waveform conditions, with clamping performance validated at 37.4 V for 3.60 A IPP and thermal resistance of 150 °C/W. It meets MIL-STD-750 Method 1020 for ESD insensitivity and exhibits inherent radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 25.0 V - Maximum continuous reverse standoff voltage before leakage exceeds 0.5 µA; defines safe operating margin for protected line. |
| VC @ IPP | 37.4 V @ 3.60 A - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to sub-38 V during transients. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use on >1 Gbps data lines without signal integrity degradation. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports repeated surge events per IEC61000-4-5 Level 3 (1 kV line-to-ground). |
| TJ Range | –55 to +175 °C - Full military-grade junction temperature range; suitable for engine control, avionics, and downhole electronics. |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient; requires minimal PCB copper area for thermal management in sealed enclosures. |
| V(BR) Min | 28.5 V @ 1 mA - Minimum breakdown voltage threshold; ensures reliable triggering above VWM with defined margin. |
Pinout & Package
MS1N8162US/TR is housed in an axial-leaded, voidless hermetically sealed hard-glass package with tungsten slugs and cathode band polarity marking. Leads are RoHS-compliant matte tin over copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink input | Connected to protected signal line; conducts surge current toward cathode during overvoltage event. |
| Cathode | Reference/ground return path | Connected to system ground or low-impedance return; completes clamping path with controlled voltage rise. |
Key Features
| Feature | Design Value |
|---|---|
| Low-capacitance architecture | 4 pF achieved via series rectifier + TVS topology-enables protection of USB 3.0, HDMI, and RF front-end interfaces without bandwidth loss. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified for space and defense applications per MIL-PRF-19500; eliminates interfacial delamination risk. |
| Hermetic glass sealing | Voidless hard-glass construction prevents moisture ingress and parametric drift over 20+ year field life in harsh environments. |
| IEC61000-4-2/4-4 compliance | Validated for ±8 kV contact / ±15 kV air discharge ESD and 4 kV EFT bursts-meets industrial and medical immunity requirements out-of-box. |
Applications
| RS-485 Data Lines | Aerospace Avionics Buses |
|---|---|
Use Scenario: Protecting full-duplex RS-485 transceivers in factory automation PLCs exposed to cable-induced surges and ground loops. IC Role / Device Role: Unidirectional TVS placed between A/B differential lines and ground to clamp common-mode transients without loading signal integrity. Use Value: 4 pF capacitance avoids skew or attenuation on 10 Mbps links; 37.4 V clamping ensures transceiver survival under 1 kV IEC61000-4-5 surges. | Use Scenario: Safeguarding ARINC 429 receive inputs in flight control computers subjected to lightning-induced transients per DO-160 Section 22. IC Role / Device Role: Standoff-rated TVS on unidirectional data input, leveraging 25.0 V VWM to match bus logic thresholds and prevent false triggering. Use Value: –55 to +175 °C operation and Category 1 bonding ensure reliability across cabin-to-engine bay temperature gradients and vibration profiles. |
| Military Radio Front Ends | Downhole Oilfield Sensors |
Use Scenario: Shielding HF/VHF receiver antenna ports in manpack radios from ESD and nearby EMP events in field deployment. IC Role / Device Role: Low-capacitance TVS mounted directly at SMA connector feedthrough to minimize stub inductance and preserve RF matching. Use Value: 4 pF capacitance maintains VSWR <1.5 up to 500 MHz; 150 W PPP handles multi-kA induced currents without failure. | Use Scenario: Transient protection for pressure/temperature sensor outputs in oil well logging tools operating at 175 °C bottom-hole temperatures. IC Role / Device Role: High-temperature-rated TVS on analog output lines, selected for guaranteed functionality at +175 °C junction temperature. Use Value: Hermetic glass package prevents hydrogen embrittlement and parametric shift after 1000+ hours at 175 °C, unlike plastic-packaged alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ24A | Surface-mount SMC package; 24 V VWM; 38.9 V VC @ 3.88 A; 170 W PPP; 100 pF capacitance. | Higher capacitance limits use to sub-100 Mbps interfaces; unsuitable for RF or high-speed serial links. | Select when board space is constrained and high-frequency performance is not required. |
| 1N6105A | Axial-leaded DO-41; 24 V VWM; 38.9 V VC @ 3.88 A; 150 W PPP; 100 pF capacitance; commercial temperature range only. | Lacks Category 1 bonding, hermetic seal, and extended temperature rating; not qualified for aerospace or downhole use. | Select for cost-sensitive industrial controls where MIL-spec reliability is unnecessary. |
Compared with SMCJ24A and 1N6105A, MS1N8162US/TR uniquely delivers 4 pF capacitance in an axial-leaded, hermetically sealed, Category 1-bonded package rated for –55 to +175 °C-making it the only option for high-speed, high-reliability, high-temperature transient protection.
Availability
MS1N8162US/TR is available at Aetrix Electronics and suitable for RS-485 data lines, aerospace avionics buses, and downhole oilfield sensors requiring stable component supply, long-term obsolescence management, and traceable sourcing for mission-critical designs.
Supply support for MS1N8162US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened devices, and precision timing solutions for aerospace, defense, and industrial markets.
The MS1N8162US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for high-frequency, high-reliability transient protection in systems where failure is not an option-such as flight control, satellite communications, and deep-well instrumentation.
FAQ
What is the working standoff voltage (VWM) of MS1N8162US/TR?
The MS1N8162US/TR has a working standoff voltage (VWM) of 25.0 V, meaning it can continuously block up to 25.0 V in reverse bias while maintaining standby current below 0.5 µA. This value is specified at 25 °C and ensures safe operation on 24 V nominal signal lines such as RS-485 or ARINC 429, with sufficient margin to avoid false triggering during normal transients. The MS1N8162US/TR VWM is confirmed in the Electrical Characteristics table on page 3 of the official Microsemi datasheet T4-LDS-xxxx.
Does MS1N8162US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MS1N8162US/TR is explicitly rated for ESD and EFT protection per IEC61000-4-2 (±8 kV contact, ±15 kV air) and IEC61000-4-4 (4 kV burst), as stated in the Applications/Benefits section of the datasheet. Its 4 pF capacitance and fast response time enable robust immunity without degrading signal fidelity. The MS1N8162US/TR achieves this compliance through its low-inductance axial-leaded construction and hermetic glass package, which eliminate parasitic effects that compromise test repeatability.
What is the maximum clamping voltage (VC) of MS1N8162US/TR at rated surge current?
The MS1N8162US/TR has a maximum clamping voltage (VC) of 37.4 V at 3.60 A peak impulse current (IPP), measured under the standard 10/1000 µs waveform. This VC value defines the upper voltage limit imposed on protected circuitry during a surge event. Because the MS1N8162US/TR maintains this clamping level while delivering 150 W peak pulse power, it reliably safeguards 24 V interface ICs-such as RS-485 transceivers-with headroom below their absolute maximum ratings.
Is MS1N8162US/TR suitable for high-temperature environments like downhole oilfield applications?
Yes, MS1N8162US/TR is rated for junction temperatures from –55 °C to +175 °C and features a voidless hermetically sealed hard-glass package that prevents parametric drift at sustained high temperatures. Its Category 1 metallurgical bond and radiation-hardened design make it qualified for downhole sensor modules where exposure to 175 °C wellbore temperatures and gamma radiation is routine. The MS1N8162US/TR datasheet confirms operation up to +175 °C in the Maximum Ratings table on page 1.
What does the "MS" prefix in MS1N8162US/TR indicate?
The "MS" prefix in MS1N8162US/TR denotes JANS-level reliability qualification per MIL-PRF-19500, indicating that the device meets stringent screening, testing, and traceability requirements for space and high-reliability defense applications. It signifies full compliance with military specifications including burn-in, temperature cycling, and lot acceptance testing. The MS1N8162US/TR is not a commercial-grade part-the "MS" prefix is integral to its identity and distinguishes it from non-qualified variants like 1N8162US/TR.
MS1N8162US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.6V
- Current - Peak Pulse (10/1000µs):
- 3.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8162US/TR FAQ
1.How can I place an order for MS1N8162US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8162US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8162US/TR reliable?
The price and inventory of MS1N8162US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8162US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8162US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8162US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8162US/TR?
MS1N8162US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8162US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8162US/TR?
For technical support, including MS1N8162US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8162US/TR requirements.
6.How does Aetrix verify that MS1N8162US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8162US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8162US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8162US/TR?
All MS1N8162US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8162US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8162US/TR part is unused and in its original packaging.
Return procedure for MS1N8162US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8162US/TR Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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