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Microchip Technology MS1N8163US/TR
- Part No.:
- MS1N8163US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8163US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,684
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Product details
Overview
MS1N8163US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) diode designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 31.4 V minimum breakdown voltage (V(BR)), 28.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - ideal for ESD-sensitive RF front-ends and MIL-STD-750-compliant aerospace interfaces.
For engineers reviewing the MS1N8163US/TR datasheet, MS1N8163US/TR pinout, MS1N8163US/TR application, or MS1N8163US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (0.5 µA max at VWM), and IEC61000-4-2/4-4 compliance for ESD/EFT hardening in mission-critical analog and digital signal paths.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration with the avalanche junction to achieve 4 pF total capacitance - the lowest among 150 W-rated TVS devices. Its hard-glass construction enables operation from –55 °C to +175 °C with thermal resistance of 150 °C/W.
The device operates as a unidirectional clamp: it blocks up to 28.0 V DC (VWM), breaks down at ≥31.4 V (I(BR) = 1 mA), clamps transients to ≤45.7 V (VC) at 300 A IPP, and exhibits 0.098 %/°C temperature coefficient of V(BR). RoHS-compliant matte tin plating ensures solderability per JEDEC J-STD-020.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 28.0 V maximum continuous reverse standoff voltage - defines safe operating ceiling before conduction begins. |
| V(BR) min | 31.4 V at I(BR) = 1 mA - guaranteed avalanche initiation threshold for reliable overvoltage triggering. |
| VC @ IPP | 45.7 V at 300 A (10/1000 µs) - clamping voltage limiting downstream circuit stress during surge events. |
| CT | 4 pF at 0 V - enables minimal signal distortion in >1 GHz RF paths and high-speed data lines. |
| PPP | 150 W peak pulse power - sustains repeated 10/1000 µs transients without degradation in hardened systems. |
| ID max | 0.5 µA at VWM - ensures negligible leakage in battery-powered or high-impedance sensor circuits. |
| TJ range | –55 °C to +175 °C - supports deployment in avionics, downhole tools, and engine control units. |
Pinout & Package
MS1N8163US/TR uses an axial-leaded hermetically sealed hard-glass package (Microsemi "A" package), with cathode identified by a band on the glass body. Leads are tin/lead or RoHS-compliant matte tin over copper; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line's signal path; conducts only during reverse-transient clamping. |
| Cathode | Negative terminal; marked with band | Connected to system ground or common reference; establishes unidirectional clamping polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Prevents moisture ingress and parametric drift over 20+ years in space-grade environments. |
| Category 1 metallurgical bond | Internal tungsten-slug interconnect rated for >10⁶ thermal cycles in MIL-PRF-19500 applications. |
| Triple-layer passivation | Enhances surface insulation integrity against contamination-induced leakage in humid or saline atmospheres. |
| Low capacitance architecture | Series rectifier + TVS topology achieves 4 pF - critical for preserving 5G NR and Wi-Fi 6E signal integrity. |
Applications
| Radar Front-End Protection | Satellite Telemetry Interface |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from lightning-induced surges and antenna coupling transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at SMA connector feedthrough to limit voltage excursion below LNA damage threshold. Use Value: 4 pF capacitance avoids resonant detuning of 1.2–1.4 GHz matching networks while clamping 300 A transients to ≤45.7 V. | Use Scenario: Shielding S-band telemetry downlink receivers from ESD events during ground handling and launch vibration. IC Role / Device Role / Timing Role: Standoff-protected transient suppressor on differential RS-422 data lines interfacing with radiation-hardened FPGAs. Use Value: –55 °C to +175 °C operation and MIL-STD-750 ESD immunity ensure zero field failures across orbital thermal cycling. |
| Aerospace Avionics Data Bus | Downhole Oilfield Sensor Module |
Use Scenario: Safeguarding ARINC 429 receive inputs against induced transients from actuator switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS mounted at bus connector with 28.0 V VWM aligned to nominal 28 V aircraft supply rail. Use Value: 0.5 µA max ID prevents loading of high-impedance ARINC receivers; 150 W PPP handles repetitive motor-switching spikes. | Use Scenario: Transient suppression on 4–20 mA current-loop sensors exposed to electrochemical corrosion and lightning ground potential rise. IC Role / Device Role / Timing Role: Hermetic TVS placed at wellhead junction box input to absorb 10/1000 µs surges exceeding 300 V. Use Value: Hard-glass package resists H₂S and salt fog; 175 °C rating matches downhole temperature profiles up to 175 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ28A | Surface-mount DO-214AB package; 28 V VWM; 400 W PPP; 100 pF CT - higher capacitance limits RF use. | Used in commercial automotive ECUs where board space is constrained but RF performance is non-critical. | Select when cost and SMT assembly efficiency outweigh ultra-low capacitance requirements. |
| 1N6370 | Axial-leaded glass DO-41; 28 V VWM; 150 W PPP; 15 pF CT - lacks Category 1 bond and hermetic seal. | Deployed in industrial PLC I/O modules requiring basic surge immunity without aerospace reliability mandates. | Choose for non-mission-critical applications where extended lifetime and radiation hardness are not required. |
Compared with SMCJ28A and 1N6370, MS1N8163US/TR uniquely combines hermetic sealing, 4 pF capacitance, and Category 1 metallurgical bonding - making it the only option qualified for MIL-PRF-19500 Class S and NASA EEE-INST-002 Level 1 programs.
Availability
MS1N8163US/TR is available at Aetrix Electronics and suitable for radar front-ends, satellite telemetry interfaces, and aerospace avionics data buses requiring stable component supply, long-term obsolescence management, and traceable lot-level qualification data.
Supply support for MS1N8163US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) specialized in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The MS1N8163US/TR belongs to Microsemi's legacy 1N81xxUS series of hermetic TVS diodes, engineered specifically for MIL-STD-461/464-compliant platforms where failure tolerance, radiation hardness, and long-term parameter stability are mandatory.
FAQ
What is the clamping voltage of MS1N8163US/TR at its rated peak impulse current?
The MS1N8163US/TR has a maximum clamping voltage (VC) of 45.7 V when subjected to a 300 A peak impulse current with a 10/1000 µs waveform. This value is measured at 25 °C ambient and ensures downstream components remain within safe operating voltage limits during surge events. The MS1N8163US/TR maintains this clamping performance across its full –55 °C to +175 °C junction temperature range, with derating applied above 25 °C per the published derating curve.
Is MS1N8163US/TR compliant with RoHS and lead-free soldering standards?
Yes, MS1N8163US/TR is RoHS compliant (e3 marking) and qualified for lead-free reflow soldering up to 260 °C for 10 seconds. Its matte tin-plated axial leads meet JEDEC J-STD-020 moisture sensitivity level 1 requirements and are compatible with standard wave and selective soldering processes. The MS1N8163US/TR retains full electrical specifications after exposure to industry-standard solder thermal profiles.
How does the 4 pF capacitance of MS1N8163US/TR impact high-frequency circuit design?
The 4 pF total capacitance of MS1N8163US/TR minimizes insertion loss and phase distortion in RF signal paths above 1 GHz, enabling direct placement at antenna ports or LNA inputs without retuning matching networks. This capacitance is achieved via a patented series rectifier + TVS topology - unlike conventional TVS diodes - and is verified at 0 V bias. The MS1N8163US/TR's low CT preserves signal integrity in 5G, radar, and SATCOM applications where even 10–20 pF would degrade return loss or group delay.
Can MS1N8163US/TR be used in bidirectional protection configurations?
MS1N8163US/TR is unidirectional by design, but bidirectional protection can be implemented using two MS1N8163US/TR devices in anti-parallel configuration as shown in Figure 5 of the original datasheet. This arrangement doubles the effective capacitance to 8 pF while maintaining 28 V symmetric standoff and 45.7 V clamping in both directions. The MS1N8163US/TR's hermetic construction ensures consistent performance across both polarities without parameter shift due to humidity or aging.
What is the significance of the "MS" prefix in MS1N8163US/TR?
The "MS" prefix in MS1N8163US/TR denotes Microsemi's JANS (Joint Army-Navy-Specification) qualification level - indicating compliance with MIL-PRF-19500 Class S requirements for space and high-reliability defense applications. This includes rigorous screening for burn-in, thermal shock, mechanical shock, and radiation hardness per MicroNote 050. The MS1N8163US/TR carries full traceability to wafer lot and assembly batch, with certification documentation available upon request.
MS1N8163US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 3.28A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8163US/TR FAQ
1.How can I place an order for MS1N8163US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8163US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8163US/TR reliable?
The price and inventory of MS1N8163US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8163US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8163US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8163US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8163US/TR?
MS1N8163US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8163US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8163US/TR?
For technical support, including MS1N8163US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8163US/TR requirements.
6.How does Aetrix verify that MS1N8163US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8163US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8163US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8163US/TR?
All MS1N8163US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8163US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8163US/TR part is unused and in its original packaging.
Return procedure for MS1N8163US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8163US/TR Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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