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Microchip Technology MS1N8164US/TR
- Part No.:
- MS1N8164US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8164US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,909
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Product details
Overview
MS1N8164US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 34.2 V minimum breakdown voltage (VBR), 30.0 V working standoff voltage (VWM), and ultra-low 4 pF capacitance - enabling ESD/EFT protection in RF front-ends and data links.
For engineers reviewing the MS1N8164US/TR datasheet, MS1N8164US/TR pinout, MS1N8164US/TR application, or MS1N8164US/TR equivalent, key selection criteria include its Category 1 metallurgical bond, hermetic glass package, low-leakage standby current (0.5 µA max at VWM), clamping voltage of 49.9 V at 3.01 A, and compliance with IEC61000-4-2/4-4/4-5 standards.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve 4 pF total capacitance while maintaining unidirectional surge suppression. Its hard-glass hermetic construction ensures zero internal voids and supports operation from –55 °C to +175 °C junction temperature.
The device uses tungsten slugs for thermal robustness and features triple-layer passivation plus RoHS-compliant matte tin plating on axial leads. It is rated for 150 W peak pulse power (10/1000 µs), 1.0 W steady-state power at 25 °C, and exhibits a VBR temperature coefficient of 0.099 %/°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30.0 V maximum continuous reverse standoff voltage - defines safe operating DC/peak AC voltage before conduction begins |
| VBR (min) | 34.2 V at 1 mA - guaranteed minimum breakdown threshold under standardized test current |
| VC | 49.9 V at IPP = 3.01 A - clamping voltage during 10/1000 µs surge, limiting downstream voltage stress |
| CT | 4 pF at 0 V - enables minimal signal distortion in >1 GHz RF paths and high-speed serial interfaces |
| PPP | 150 W at 25 °C (10/1000 µs) - peak transient energy handling capacity without failure |
| ID | 0.5 µA max at VWM - ultra-low leakage preserves signal integrity and battery life in always-on circuits |
| TJ/TSTG | –55 °C to +175 °C - supports deployment in aerospace, downhole, and military environments |
Pinout & Package
MS1N8164US/TR is housed in an axial-leaded, voidless-hermetically-sealed hard-glass package with tungsten slugs and cathode band polarity marking. Dimensions: BD = 0.060–0.085 in (1.52–2.16 mm), BL = 0.106–0.175 in (2.69–4.45 mm), LL = 0.800–1.300 in (20.32–33.02 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry point during reverse-biased surge | Connected to protected line; conducts only when VAK exceeds VBR |
| Cathode | Transient current exit point to ground or return path | Marked by band; provides low-impedance path to shunt surge energy away from IC inputs |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal bond structure qualified per MIL-STD-750 Method 2024 for high-reliability applications requiring zero bond degradation over lifetime |
| Voidless hermetic seal | Eliminates moisture ingress and internal delamination risk - critical for 20+ year field deployments in sealed enclosures |
| Triple-layer passivation | Enhanced surface insulation prevents leakage creepage and improves long-term stability under humidity and bias stress |
| Low 4 pF capacitance | Preserves signal rise time and impedance matching in 50 Ω RF systems up to 3 GHz without added tuning components |
| Nonsensitive to ESD | Qualified per MIL-STD-750 Method 1020 - withstands handling without pre-failure, simplifying assembly logistics |
Applications
| RF Front-End Protection | High-Speed Data Line Protection |
|---|---|
Use Scenario: Protecting LNA inputs and mixer outputs in satellite transceivers exposed to lightning-induced surges and ESD events. IC Role / Device Role: Unidirectional TVS placed directly at SMA connector interface to clamp transients before they reach GaAs MMICs. Use Value: 4 pF capacitance avoids de-tuning 2.4 GHz matching networks; 49.9 V clamping prevents LNA gate oxide rupture. | Use Scenario: Shielding RS-485/RS-422 differential pairs in industrial PLC backplanes from cable discharge events. IC Role / Device Role: Discrete TVS mounted on each line (A/B) with common-ground connection to absorb common-mode surges. Use Value: 0.5 µA standby leakage minimizes bus loading; 150 W rating handles 4 kV EFT bursts per IEC61000-4-4. |
| Military Avionics Power Bus | Downhole Sensor Signal Conditioning |
Use Scenario: Safeguarding ARINC 429 receivers and discrete input circuits against induced transients from actuator switching noise. IC Role / Device Role: TVS installed at connector entry point on line-receiver PCB, oriented to protect against negative-going spikes. Use Value: –55 °C to +175 °C rating matches avionics thermal cycling; hermetic seal prevents condensation-related failure at altitude. | Use Scenario: Protecting analog sensor outputs (e.g., piezoresistive pressure transducers) in oil/gas wellhead electronics exposed to electrostatic discharge during maintenance. IC Role / Device Role: Low-capacitance TVS placed at signal conditioning amplifier input to prevent latch-up without affecting 10 mV/V sensitivity. Use Value: 4 pF capacitance avoids gain error in 100 kHz bandwidth amplifiers; radiation-hardened behavior per MicroNote 050 ensures reliability in gamma-rich environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33A | Surface-mount SMB package; 33 V VWM; 55 V VC at 4.3 A; 6.5 pF capacitance | Lacks hermetic seal and Category 1 bond; not rated for >125 °C operation | Preferred for cost-sensitive, space-constrained consumer designs where extended temperature and reliability are secondary |
| 1N6105A | Axial-leaded but non-hermetic epoxy package; 33 V VWM; 53.3 V VC at 2.8 A; 10 pF capacitance | No triple-layer passivation; higher leakage (5 µA); not radiation-hardened | Suitable for commercial-grade industrial controls where 4 pF and radiation tolerance are not required |
Compared with SMBJ33A and 1N6105A, MS1N8164US/TR provides superior high-frequency fidelity (4 pF vs. ≥6.5 pF), assured reliability via hermetic sealing and Category 1 bonding, and extended temperature capability - making it the only option qualified for mission-critical aerospace, defense, and downhole applications.
Availability
MS1N8164US/TR is available at Aetrix Electronics and suitable for RF front-end protection, high-speed data line safeguarding, and military avionics power bus transient suppression requiring stable component supply across extended product lifecycles.
Supply support for MS1N8164US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened devices, and precision timing solutions.
The MS1N8164US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for defense, aerospace, and oilfield electronics where failure is not an option and environmental extremes must be tolerated.
FAQ
What is the clamping voltage of MS1N8164US/TR at its rated peak pulse current?
The MS1N8164US/TR has a maximum clamping voltage (VC) of 49.9 V when subjected to its rated peak impulse current (IPP) of 3.01 A under the standard 10/1000 µs waveform. This value is measured at TA = 25 °C and ensures downstream circuitry remains below destructive voltage thresholds during transient events. The MS1N8164US/TR maintains this performance across its full operating temperature range due to its hermetic construction and stable metallurgical bond.
Is MS1N8164US/TR RoHS compliant?
Yes, MS1N8164US/TR is RoHS compliant, indicated by the "e3" suffix in its full nomenclature. Its axial leads feature matte tin plating over copper, meeting EU Directive 2011/65/EU requirements. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Microsemi certifies compliance per JESD22-A112 and IPC/JEDEC J-STD-020 standards, and the MS1N8164US/TR is suitable for use in environmentally regulated markets including EU, Japan, and South Korea.
How does the 4 pF capacitance of MS1N8164US/TR compare to standard TVS diodes?
The 4 pF capacitance of MS1N8164US/TR is among the lowest available for a 150 W-rated TVS diode. Standard axial or surface-mount TVS devices typically exhibit 10–30 pF, which introduces unacceptable signal distortion in RF and high-speed digital applications. The MS1N8164US/TR achieves this via a patented series-connected rectifier configuration that cancels parasitic capacitance - enabling direct placement on 50 Ω antenna feeds and >1 Gbps data lines without impedance mismatch or bandwidth loss.
What is the meaning of "MS" prefix in MS1N8164US/TR?
The "MS" prefix in MS1N8164US/TR denotes the JANS (Joint Army-Navy-Space) reliability level, indicating qualification to MIL-PRF-19500/530 for space-level applications. This includes rigorous screening for burn-in, thermal shock, mechanical shock, vibration, and hermeticity testing. The MS1N8164US/TR is fully traceable to lot-controlled wafers and meets SMD Class H requirements - distinguishing it from commercial (blank), JAN (MQ), or JANTXV (MV) variants. This prefix confirms its suitability for flight-critical systems.
Can MS1N8164US/TR be used for bidirectional protection?
No, MS1N8164US/TR is strictly unidirectional. For bidirectional protection, two MS1N8164US/TR devices must be connected in anti-parallel (anode-to-anode or cathode-to-cathode), as documented in Figure 5 of the original datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping performance in both polarities. Using a single MS1N8164US/TR for bidirectional threats risks catastrophic failure during positive transients, as it lacks reverse conduction capability.
MS1N8164US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 3.01A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8164US/TR FAQ
1.How can I place an order for MS1N8164US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8164US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8164US/TR reliable?
The price and inventory of MS1N8164US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8164US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8164US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8164US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8164US/TR?
MS1N8164US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8164US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8164US/TR?
For technical support, including MS1N8164US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8164US/TR requirements.
6.How does Aetrix verify that MS1N8164US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8164US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8164US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8164US/TR?
All MS1N8164US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8164US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8164US/TR part is unused and in its original packaging.
Return procedure for MS1N8164US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8164US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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