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Microchip Technology MS1N8165US/TR
- Part No.:
- MS1N8165US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8165US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,132
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Product details
Overview
MS1N8165US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 33.0 V working standoff voltage (VWM), 53.6 V clamping voltage (VC) at 300 A peak impulse current, and 4 pF capacitance - designed for ESD/EFT protection in high-frequency RF front-ends and aerospace-grade signal lines.
For engineers reviewing the MS1N8165US/TR datasheet, MS1N8165US/TR pinout, MS1N8165US/TR application, or MS1N8165US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass package robustness, and IEC61000-4-2/4-4 compliance without PCB layout compromise.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional operation. It delivers 150 W peak pulse power (10/1000 µs) and supports surge currents up to 300 A with clamping voltage tightly specified at 53.6 V.
Rated for -55°C to +175°C junction temperature, it uses hard-glass hermetic sealing with tungsten slugs and internal Category 1 metallurgical bonds - meeting MIL-STD-750 Method 1020 for ESD insensitivity and Microsemi MicroNote 050 for inherent radiation hardness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33.0 V - Maximum continuous reverse standoff voltage before conduction; sets operating margin for protected line. |
| VC @ IPP=300 A | 53.6 V - Clamped voltage during 10/1000 µs surge; defines maximum stress on downstream ICs. |
| CT | 4 pF - Total small-signal capacitance; enables use in >1 GHz RF paths without signal integrity loss. |
| PPP | 150 W - Peak pulse power rating at 25°C; validates robustness against lightning-induced transients per IEC61000-4-5. |
| TJ Range | -55°C to +175°C - Extended thermal envelope supporting aerospace, downhole, and engine-control environments. |
| RθJA | 150°C/W - Thermal resistance from junction to ambient; informs heatsinking requirements for sustained surge duty. |
| ID @ VWM | 0.5 µA - Standby leakage at rated standoff; ensures minimal DC loading on high-impedance sensor interfaces. |
Pinout & Package
MS1N8165US/TR uses an axial-leaded "A" package (hermetically sealed voidless hard glass with tungsten slugs), cathode-banded polarity, RoHS-compliant matte tin plating over copper leads, and weighs ~340 mg. Mounting is position-independent.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during reverse surge | Connected to protected line; conducts only when Vline exceeds VWM by breakdown threshold. |
| Cathode | Reference terminal / surge return path | Connected to system ground or low-impedance reference; completes clamping loop during ESD event. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift - critical for 20+ year mission life in space systems. |
| Category 1 metallurgical bond | Guarantees interconnect integrity under thermal cycling, vibration, and radiation exposure per MIL-PRF-19500. |
| 4 pF total capacitance | Preserves signal rise time and impedance matching in 5G front-end modules and high-speed data links. |
| IEC61000-4-2/4-4 compliance | Validated for ±15 kV contact / ±20 kV air discharge ESD and 4 kV EFT bursts - no external filtering required. |
| 150 W peak pulse power | Withstands multiple 10/1000 µs surges up to 300 A without degradation - suitable for secondary lightning protection. |
Applications
| Radar Transceiver Front-End | Satellite Telemetry Interface |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from ESD and induced surges during antenna switching and launch vibration. IC Role / Device Role / Timing Role: Unidirectional clamping device placed directly at SMA connector feedthrough to limit voltage excursion below LNA damage threshold. Use Value: 4 pF capacitance avoids gain roll-off or phase distortion; 53.6 V clamping ensures LNA survival under MIL-STD-461 CS115 pulses. | Use Scenario: Safeguarding command/data lines between flight computer and attitude control sensors in deep-space probes. IC Role / Device Role / Timing Role: Standoff-rated TVS on RS-422 differential pairs, leveraging hermetic seal and radiation hardness for multi-year vacuum operation. Use Value: -55°C to +175°C rating and Category 1 bonding ensure zero parametric shift after 10⁵ thermal cycles in lunar orbit. |
| Aerospace Avionics Data Bus | Downhole Oilfield Sensor Harness |
Use Scenario: Shielding ARINC 429 receive inputs from lightning-induced transients on aircraft wingtip antennas. IC Role / Device Role / Timing Role: Primary transient suppressor on bus termination node, coordinated with upstream gas discharge tube for staged protection. Use Value: 150 W PPP and 300 A IPP handle coupled energy from Level 4 IEC61000-4-5 surges without latch-up or parametric shift. | Use Scenario: Protecting 4–20 mA analog sensor outputs exposed to switching transients in high-temperature (>150°C) wellhead electronics. IC Role / Device Role / Timing Role: High-temp-rated TVS mounted directly at sensor cable entry point, using axial leads for mechanical strain relief. Use Value: Hermetic glass construction prevents electrolyte migration at 175°C; 0.5 µA leakage avoids measurement error in precision current loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ33A | Surface-mount DO-214AB package; 33 V VWM; 53.3 V VC @ 300 A; 150 W PPP; but 100 pF capacitance. | Not suitable for RF or >100 MHz signal paths due to 25× higher capacitance; requires PCB rework for SMT placement. | Select only if board space is constrained and frequency < 10 MHz; verify thermal derating at 150°C ambient. |
| 1N6377 | Axial-leaded glass package; 33 V VWM; 53.3 V VC @ 300 A; 150 W PPP; 4 pF capacitance; but commercial-grade (non-Category 1) bond. | Lacks MIL-PRF-19500 Category 1 qualification; not radiation-hardened; limited to non-aerospace industrial use. | Acceptable for terrestrial telecom infrastructure where radiation tolerance and 20-year life are not required. |
Compared with SMCJ33A and 1N6377, MS1N8165US/TR uniquely combines hermetic sealing, Category 1 metallurgy, radiation hardness, and 4 pF capacitance - making it the only option qualified for flight-critical RF and telemetry protection without trade-offs in reliability or bandwidth.
Availability
MS1N8165US/TR is available at Aetrix Electronics and suitable for radar front-ends, satellite telemetry interfaces, and aerospace avionics data buses requiring stable component supply across extended product lifecycles.
Supply support for MS1N8165US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade components.
The MS1N81xxUS series was engineered specifically for mission-critical transient suppression in defense, space, and oilfield applications - prioritizing hermeticity, temperature resilience, and ESD immunity over cost or consumer-grade scalability.
FAQ
What is the clamping voltage of MS1N8165US/TR at its rated peak impulse current?
The MS1N8165US/TR has a maximum clamping voltage (VC) of 53.6 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and is critical for ensuring downstream ICs remain within safe operating limits during transient events. The MS1N8165US/TR achieves this performance while maintaining only 4 pF capacitance - a key differentiator versus standard TVS diodes.
Is MS1N8165US/TR compliant with IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MS1N8165US/TR is validated for ESD immunity per IEC61000-4-2 (±15 kV contact, ±20 kV air discharge) and electrical fast transient (EFT) immunity per IEC61000-4-4 (4 kV burst). These ratings are achieved without external filtering due to its low 4 pF capacitance and controlled clamping behavior. The MS1N8165US/TR's hermetic construction and Category 1 metallurgical bonds further ensure consistent performance across repeated stress events.
What does the "MS" prefix in MS1N8165US/TR signify?
The "MS" prefix in MS1N8165US/TR indicates JANS-level qualification - the highest military reliability grade per MIL-PRF-19500, including screening for burn-in, temperature cycling, and hermeticity. It confirms the device meets Category 1 internal metallurgical bond requirements and is rated for aerospace and defense applications. The "US" suffix denotes the axial-leaded "A" package variant, and "/TR" specifies tape-and-reel packaging per EIA-296.
Can MS1N8165US/TR be used in bidirectional configurations?
MS1N8165US/TR is inherently unidirectional, but bidirectional protection can be implemented by placing two units in anti-parallel configuration - as documented in Figure 5 of the Microsemi datasheet. This arrangement doubles the effective capacitance to 8 pF while preserving clamping symmetry. For true bidirectional low-capacitance TVS functionality, the MS1N8165US/TR must be paired; standalone use provides only cathode-to-anode surge suppression.
What is the thermal resistance and maximum steady-state power dissipation of MS1N8165US/TR?
The MS1N8165US/TR has a thermal resistance of 150°C/W (junction-to-ambient) and a maximum steady-state power dissipation of 1.0 W at TA = 25°C. This rating assumes adequate PCB thermal management - such as copper pour or thermal vias - to prevent junction temperature from exceeding +175°C. The MS1N8165US/TR's hard-glass package and tungsten slug construction enable reliable operation even under intermittent surge loads that exceed average power limits.
MS1N8165US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 37.1V
- Voltage - Clamping (Max) @ Ipp:
- 53.6V
- Current - Peak Pulse (10/1000µs):
- 2.8A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8165US/TR FAQ
1.How can I place an order for MS1N8165US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8165US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8165US/TR reliable?
The price and inventory of MS1N8165US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8165US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8165US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8165US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8165US/TR?
MS1N8165US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8165US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8165US/TR?
For technical support, including MS1N8165US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8165US/TR requirements.
6.How does Aetrix verify that MS1N8165US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8165US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8165US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8165US/TR?
All MS1N8165US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8165US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8165US/TR part is unused and in its original packaging.
Return procedure for MS1N8165US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8165US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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