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Microchip Technology MS1N8166US/TR
- Part No.:
- MS1N8166US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8166US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,486
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Product details
Overview
MS1N8166US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 36 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MS1N8166US/TR datasheet, MS1N8166US/TR pinout, MS1N8166US/TR application, or MS1N8166US/TR equivalent, this device delivers verified low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, secondary lightning protection per IEC61000-4-5, and radiation-hardened performance per MicroNote 050 - critical for hardened communication interfaces and avionics signal lines.
Technical Context
This TVS employs a unique dual-element structure: a primary avalanche junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package eliminates voids and supports operation from –55 °C to +175 °C junction temperature.
The device achieves 36 V working standoff (VWM) with 40.9 V minimum breakdown voltage (VBR) at 1 mA, clamps to ≤53.6 V at 300 A peak impulse current (IPP), and exhibits 0.100 %/°C temperature coefficient of breakdown voltage - ensuring stable overvoltage protection across wide thermal ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 36 V - maximum continuous reverse-biased operating voltage before leakage exceeds 0.5 µA |
| VBR (min) | 40.9 V at 1 mA - guaranteed avalanche onset threshold for reliable overvoltage triggering |
| VC | ≤53.6 V at 300 A - clamping voltage under 10/1000 µs surge ensures downstream ICs see <54 V stress |
| Capacitance (CT) | 4 pF at 0 V - enables protection of >1 GHz RF front-ends and high-speed serial links without signal distortion |
| PPP | 150 W at 25 °C - peak pulse power rating validated for 10/1000 µs waveform per IEC61000-4-5 |
| IPP | 300 A - maximum non-repetitive surge current capability for lightning-induced transients |
| αVBR | 0.100 %/°C - low temperature drift preserves clamping accuracy across military temperature range |
Pinout & Package
MS1N8166US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal during normal forward bias | Connected to protected line; conducts only during reverse-transient clamping |
| Cathode | Negative terminal; marked with band | Connected to ground or common reference; defines unidirectional clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - essential for 20+ year field life in space-grade systems |
| Category 1 metallurgical bond | Internal tungsten-slug interconnect meets MIL-STD-883 Class B reliability requirements for mission-critical hardware |
| 4 pF capacitance | Enables protection of USB 3.0, HDMI, and RF antenna ports without degrading signal integrity or bandwidth |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050 - no derating required up to 100 krad(Si) |
| Triple-layer passivation | Prevents surface leakage and corrosion in high-humidity or salt-fog environments (e.g., naval electronics) |
Applications
| Avionics Data Bus Protection | Satellite Telemetry Interface |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines against induced lightning transients and ESD events during flight operations. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed directly at connector entry point to shunt surges before reaching bus transceivers. Use Value: 4 pF capacitance prevents signal rise-time degradation on 1 Mbps differential buses; 150 W rating handles DO-160 Section 22 Level 4 induced transients. | Use Scenario: Shielding S-band telemetry downlink receivers from electrostatic discharge during ground handling and launch vibration. IC Role / Device Role / Timing Role: Standoff-protection element on RF input path, mounted between SMA connector and LNA input. Use Value: 36 V VWM allows uninterrupted DC bias to LNA while clamping ESD spikes to <54 V; radiation hardness avoids parametric shift in orbit. |
| Ground-Based Radar Front-End | Military Radio Transceiver |
Use Scenario: Safeguarding GaN power amplifier inputs in X-band radar modules exposed to EMP and nearby lightning strikes. IC Role / Device Role / Timing Role: First-line transient suppressor on RF signal path prior to circulator and amplifier stages. Use Value: 300 A IPP withstands multi-kA induced surges; 4 pF capacitance preserves >8 GHz small-signal gain flatness. | Use Scenario: Securing HF/VHF transceiver antenna ports against ESD during field deployment and vehicle-mounted operation. IC Role / Device Role / Timing Role: Axial-leaded TVS soldered inline on coaxial feedline, grounded via shortest possible trace. Use Value: Hermetic glass construction ensures long-term stability in desert/dust/humidity extremes; RoHS option supports export compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ36A | Surface-mount DO-214AB package; 65 pF capacitance; 36 V VWM; 1500 W PPP rating | Higher capacitance limits use to sub-100 MHz circuits; higher PPP suits lower-frequency industrial surges | Select when board space is constrained and RF performance is not critical |
| 1N6105A | Axial-leaded DO-41; 15 pF capacitance; 36 V VWM; 150 W PPP; non-hermetic epoxy package | Lacks radiation hardness and Category 1 bonding; unsuitable for space or nuclear environments | Select for cost-sensitive commercial telecom where hermeticity and TID tolerance are unnecessary |
Compared with SMCJ36A and 1N6105A, MS1N8166US/TR uniquely combines 4 pF capacitance, hermetic reliability, and radiation hardness - making it irreplaceable for protecting high-frequency, safety-critical signal paths in aerospace platforms where failure is not an option.
Availability
MS1N8166US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite telemetry interface design, and ground-based radar front-end development requiring stable component supply and full traceability.
Supply support for MS1N8166US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure analog/mixed-signal solutions for aerospace, defense, and industrial markets.
The MS1N8166US/TR belongs to Microsemi's legacy 1N81xx series of hermetic TVS diodes, engineered specifically for mission-critical transient protection where zero-failure tolerance, extreme environmental resilience, and long-term parametric stability are mandatory.
FAQ
What is the clamping voltage of MS1N8166US/TR at its rated peak pulse current?
The MS1N8166US/TR has a maximum clamping voltage (VC) of 53.6 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per IEC61000-4-5 and guarantees that downstream circuitry remains below destructive voltage thresholds during surge events. The MS1N8166US/TR maintains this clamping performance across its full operating temperature range of –55 °C to +175 °C.
Is MS1N8166US/TR suitable for bidirectional transient protection?
No - MS1N8166US/TR is strictly unidirectional. For bidirectional protection, two MS1N8166US/TR devices must be connected in anti-parallel (cathode-to-anode), as documented in Figure 5 of the datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same VWM and clamping characteristics. The MS1N8166US/TR itself does not support symmetrical clamping in both polarities.
Does MS1N8166US/TR meet RoHS requirements?
Yes - the "e3" suffix in MS1N8166US/TR indicates RoHS-compliant matte tin plating over copper leads. The device complies with Directive 2011/65/EU and contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Non-RoHS versions (blank suffix) are also available for legacy military applications requiring tin/lead termination.
What is the thermal resistance of MS1N8166US/TR, and how does it affect power dissipation?
The MS1N8166US/TR has a junction-to-ambient thermal resistance (RθJA) of 150 °C/W. At 25 °C ambient, its steady-state average power rating is 1.0 W - meaning sustained power dissipation above this level risks exceeding the 175 °C maximum junction temperature. The MS1N8166US/TR is intended for transient (not continuous) power handling; its 150 W peak pulse rating applies only to short-duration impulses (e.g., 10/1000 µs).
How does the internal series rectifier diode in MS1N8166US/TR reduce capacitance?
The MS1N8166US/TR integrates a rectifier diode in series and opposite polarity to the main TVS junction. This arrangement creates a high-impedance blocking path at zero bias, reducing total terminal capacitance to 4 pF - significantly lower than conventional single-junction TVS diodes (typically 50–200 pF). The MS1N8166US/TR leverages this architecture to protect high-frequency circuits without compromising signal fidelity.
MS1N8166US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.1V
- Current - Peak Pulse (10/1000µs):
- 2.54A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8166US/TR FAQ
1.How can I place an order for MS1N8166US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8166US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8166US/TR reliable?
The price and inventory of MS1N8166US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8166US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8166US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8166US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8166US/TR?
MS1N8166US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8166US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8166US/TR?
For technical support, including MS1N8166US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8166US/TR requirements.
6.How does Aetrix verify that MS1N8166US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8166US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8166US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8166US/TR?
All MS1N8166US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8166US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8166US/TR part is unused and in its original packaging.
Return procedure for MS1N8166US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8166US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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