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Microchip Technology MS1N8167US/TR
- Part No.:
- MS1N8167US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8167US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,572
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Product details
Overview
MS1N8167US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 40.0 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features internal Category 1 metallurgical bonds and low-leakage operation (ID ≤ 0.5 µA), designed for ESD/EFT protection in high-frequency RF front-ends and aerospace-grade signal lines.
For engineers reviewing the MS1N8167US/TR datasheet, MS1N8167US/TR pinout, MS1N8167US/TR application, or MS1N8167US/TR equivalent, this page delivers verified electrical parameters, hermetic glass package details, clamping behavior under surge, and RoHS-compliant alternatives for mission-critical transient suppression where failure is not tolerable.
Technical Context
The MS1N8167US/TR implements a unique series-connected rectifier diode opposing the TVS junction to achieve ultra-low 4 pF total capacitance-critical for >1 GHz signal integrity. Its hard-glass hermetic construction ensures zero voids and supports operation from –55 °C to +175 °C junction temperature.
It delivers 64.6 V maximum clamping voltage (VC) at 300 A peak impulse current (IPP), with 0.101 %/°C breakdown voltage temperature coefficient (αV(BR)) and 1.0 W steady-state power dissipation at 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 40.0 V - Maximum continuous reverse-bias voltage before leakage exceeds 0.5 µA |
| V(BR) min | 44.7 V - Minimum breakdown voltage measured at 1 mA, ensuring robust overvoltage threshold |
| VC @ IPP | 64.6 V - Clamped voltage across device during 300 A 10/1000 µs surge, limiting downstream stress |
| CT | 4 pF - Total capacitance at 0 V, enabling minimal signal distortion in RF and high-speed data paths |
| PPP | 150 W - Peak pulse power rating per IEC 61000-4-5 waveform, supporting lightning-level transients |
| TJ Range | –55 °C to +175 °C - Full military-grade operating junction temperature range |
| RθJA | 150 °C/W - Thermal resistance from junction to ambient, defining derating above 25 °C |
Pinout & Package
MS1N8167US/TR uses an axial-leaded "A" package (hard-glass hermetic case with tungsten slugs), marked with cathode band polarity and RoHS-compliant matte tin plating. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for transient energy absorption | Connected to protected line; conducts during overvoltage events when cathode is held higher |
| Cathode | Reference terminal with band marking | Connected to ground or reference rail; defines unidirectional conduction direction and polarity-sensitive clamping |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic seal | Eliminates moisture ingress and long-term parameter drift in vacuum or humid environments |
| Category 1 metallurgical bond | Meets MIL-STD-750 requirements for high-reliability aerospace and defense applications |
| Triple-layer passivation | Prevents surface leakage and enhances stability under ionizing radiation exposure |
| Low 4 pF capacitance | Enables use in 5G RF front-ends, GPS receivers, and high-speed serial links without bandwidth degradation |
| Nonsensitive to ESD | Withstands handling per MIL-STD-750 Method 1020 without parametric shift or failure |
Applications
| RF Front-End Protection | Avionics Data Bus Line |
|---|---|
Use Scenario: Protecting LNA inputs and antenna switch outputs in airborne SATCOM transceivers against induced lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly at RF port to limit voltage excursion below IC damage threshold while preserving impedance match. Use Value: 4 pF capacitance avoids detuning of 1.6–2.5 GHz matching networks; 64.6 V clamping ensures GaAs FET gate oxide remains intact during 300 A transients. | Use Scenario: Safeguarding ARINC 429 receive lines in flight control computers exposed to aircraft static discharge and EMP. IC Role / Device Role / Timing Role: Standoff-rated transient suppressor on differential data lines, absorbing fast-rising ESD pulses without disrupting 100 kbps Manchester-encoded signals. Use Value: 0.5 µA standby leakage prevents DC bias shift on high-impedance receivers; hermetic seal guarantees reliability over 20+ year service life. |
| Military Radar Pulse Modulator | Satellite Telemetry Interface |
Use Scenario: Shielding solid-state modulator gate drivers from switching-induced dv/dt transients in pulsed radar transmitters. IC Role / Device Role / Timing Role: Fast-response unidirectional clamp on MOSFET gate drive path, triggered within nanoseconds of overvoltage onset. Use Value: 150 W peak pulse power handles repetitive 10/1000 µs surges up to 0.01% duty cycle; 175 °C max junction temperature supports conduction-cooled chassis mounting. | Use Scenario: Securing S-band telemetry downlink receivers aboard LEO satellites against space-weather-induced electrostatic discharge. IC Role / Device Role / Timing Role: Radiation-hardened transient suppressor on analog sensor interface lines, rated per Microsemi MicroNote 050. Use Value: Inherent radiation tolerance eliminates need for shielding mass; 4 pF capacitance maintains signal fidelity across 2.2 GHz telemetry bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ40A | Surface-mount DO-214AB package; 64.5 V VC @ 32.4 A; 400 W PPP; 100 pF CT | Higher capacitance limits use in RF paths; suited for board-level power rail protection | Select when PCB space is constrained and RF performance is not required |
| 1N6105A | Axial-leaded glass package; 43.0 V VWM; 69.4 V VC @ 217 A; 150 W PPP; 10 pF CT | Higher capacitance and lower surge current rating reduce margin in lightning-prone systems | Select when cost sensitivity outweighs ultra-low capacitance requirement |
Compared with SMCJ40A and 1N6105A, the MS1N8167US/TR uniquely delivers 4 pF capacitance in a hermetic axial package with Category 1 bonding-making it irreplaceable for RF, aerospace, and radiation-exposed applications where signal integrity and long-term reliability are non-negotiable.
Availability
MS1N8167US/TR is available at Aetrix Electronics and suitable for RF front-end protection, avionics data bus line safeguarding, and military radar pulse modulator circuits requiring stable component supply across extended product lifecycles.
Supply support for MS1N8167US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation hardness and long-term stability.
The MS1N8167US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes, engineered specifically for mission-critical transient suppression in environments where failure is unacceptable-including satellite systems, fighter avionics, and nuclear instrumentation.
FAQ
What is the clamping voltage of MS1N8167US/TR at its rated peak impulse current?
The MS1N8167US/TR has a maximum clamping voltage (VC) of 64.6 V when subjected to its rated 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is guaranteed per the manufacturer's Electrical Characteristics table and defines the upper voltage limit imposed on protected circuitry during surge events. The MS1N8167US/TR achieves this clamping performance while maintaining only 4 pF capacitance-critical for preserving signal integrity in high-frequency applications.
Is MS1N8167US/TR RoHS compliant?
Yes, MS1N8167US/TR is RoHS compliant, indicated by the "e3" suffix in its nomenclature per Microsemi's PART NOMENCLATURE guide. The device uses matte tin plating over copper leads and meets Directive 2011/65/EU requirements. Its hermetic glass construction contains no lead-based solder seals, and all materials are certified to RoHS substance restrictions. MS1N8167US/TR is suitable for export-controlled and environmentally regulated programs requiring full compliance documentation.
What is the maximum working standoff voltage (VWM) for MS1N8167US/TR?
The maximum working standoff voltage (VWM) for MS1N8167US/TR is 40.0 V DC or repetitive peak reverse voltage. This is the highest continuous voltage that can be applied across the device without exceeding 0.5 µA standby current (ID). Exceeding VWM risks premature conduction and accelerated aging. The MS1N8167US/TR's 44.7 V minimum breakdown voltage (V(BR)) provides a defined margin above VWM, ensuring reliable operation in nominal 36 V or 40 V system rails.
How does the internal series diode configuration in MS1N8167US/TR reduce capacitance?
The MS1N8167US/TR integrates a rectifier diode in series and opposite polarity to the main TVS junction. This configuration increases the effective depletion region width under reverse bias, reducing total junction capacitance to 4 pF-among the lowest for 150 W TVS devices. Unlike conventional TVS diodes, this architecture avoids trade-offs between surge rating and capacitance. The MS1N8167US/TR leverages this design to protect high-speed interfaces without signal degradation.
Can MS1N8167US/TR be used for bidirectional transient suppression?
No, MS1N8167US/TR is strictly unidirectional. For bidirectional protection, two MS1N8167US/TR devices must be connected in anti-parallel (cathode-to-anode), as documented in Figure 5 of the datasheet. This configuration doubles total capacitance to 8 pF but preserves low-clamp performance. Using a single MS1N8167US/TR in reverse bias will not conduct or clamp-its inverse blocking voltage (VWIB) is rated at 400 V, but it lacks symmetrical breakdown characteristics required for true bidirectional operation.
MS1N8167US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.6V
- Current - Peak Pulse (10/1000µs):
- 2.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8167US/TR FAQ
1.How can I place an order for MS1N8167US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8167US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8167US/TR reliable?
The price and inventory of MS1N8167US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8167US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8167US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8167US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8167US/TR?
MS1N8167US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8167US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8167US/TR?
For technical support, including MS1N8167US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8167US/TR requirements.
6.How does Aetrix verify that MS1N8167US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8167US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8167US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8167US/TR?
All MS1N8167US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8167US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8167US/TR part is unused and in its original packaging.
Return procedure for MS1N8167US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8167US/TR Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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