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Microchip Technology MS1N8168US/TR
- Part No.:
- MS1N8168US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8168US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:7,086
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Product details
Overview
MS1N8168US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 48.5 V minimum breakdown voltage (VBR), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MS1N8168US/TR datasheet, MS1N8168US/TR pinout, MS1N8168US/TR application, or MS1N8168US/TR equivalent, this device delivers verified low-capacitance ESD/EFT protection per IEC61000-4-2/4-4, secondary lightning protection per IEC61000-4-5, and robust operation from –55 °C to +175 °C in hermetic glass packaging.
Technical Context
This TVS employs a unique dual-element structure: a Zener-like avalanche junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance while maintaining unidirectional clamping behavior. Its hard-glass hermetic package eliminates voids and supports Category 1 metallurgical bonds for radiation-hardened and mission-critical environments.
The device operates with a 43.0 V working standoff voltage (VWM), clamps to ≤70.1 V at 300 A peak impulse current (IPP), and exhibits 0.102 %/°C temperature coefficient of breakdown voltage. Standby leakage remains ≤0.5 µA at rated VWM, ensuring minimal signal loading in high-frequency interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43.0 V - Maximum continuous reverse-bias voltage before significant leakage; sets operating margin for protected circuitry. |
| VBR (min) | 48.5 V at 1 mA - Confirmed avalanche onset threshold; defines minimum clamping trigger point under surge conditions. |
| VC | 70.1 V at 300 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on downstream ICs. |
| CT | 4 pF - Total terminal capacitance at 0 V; enables use in >1 GHz RF front-ends and high-speed data lines without signal distortion. |
| PPP | 150 W at 25 °C - Peak pulse power rating; supports single-event transients up to 300 A with defined waveform fidelity. |
| TJ/TSTG | –55 to +175 °C - Junction/storage temperature range; qualifies for extended-temperature military and space-grade deployments. |
| ID | ≤0.5 µA - Standby leakage at VWM; ensures negligible DC loading on precision analog or low-power sensor nodes. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass axial-leaded case with tungsten slugs; cathode band marking; RoHS-compliant matte tin plating over copper leads; weight ≈340 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts only during reverse-clamp events when cathode is biased positive relative to anode. |
| Cathode | Clamping reference node and surge return path | Connected to ground or low-impedance return; establishes VWM and VC reference; marked by visible band on glass body. |
Key Features
| Feature | Design Value |
|---|---|
| Low capacitance architecture | 4 pF achieved via integrated anti-series rectifier diode-enables protection of USB 3.0, HDMI, RF antennas without bandwidth degradation. |
| Category 1 metallurgical bond | Internal high-reliability bond structure qualified per MIL-STD-883; ensures survivability in radiation-intensive or long-life embedded systems. |
| Voidless hermetic seal | Hard-glass enclosure with zero internal voids prevents moisture ingress and parameter drift over 20+ year field life in harsh environments. |
| ESD/EFT compliance | Validated per IEC61000-4-2 (±8 kV contact) and IEC61000-4-4 (±2 kV fast transient burst); eliminates need for external filtering in certified designs. |
Applications
| Radar Front-End Protection | Avionics Data Bus Interface |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from induced lightning surges and antenna coupling transients in airborne radar systems. IC Role / Device Role / Timing Role: Unidirectional clamping element placed directly at RF connector entry point, shunting surge energy to chassis ground before low-noise amplifier input. Use Value: 4 pF capacitance preserves S21 insertion loss and VSWR below 1.2:1 up to 2 GHz; 70.1 V clamping limits baseband IC damage during 100 A transients. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B differential bus receivers against ESD events during maintenance or environmental exposure. IC Role / Device Role / Timing Role: Discrete TVS mounted across each bus line-to-ground, leveraging low leakage (<0.5 µA) to avoid signal integrity degradation on 1 Mbps serial links. Use Value: 43.0 V VWM exceeds ARINC 429 peak differential (±12 V) with 3× margin; 150 W PPP handles multiple ESD strikes without parametric shift. |
| Satellite Power Distribution Monitoring | Downhole Oilfield Sensor Interface |
Use Scenario: Transient suppression on telemetry lines monitoring 28 V DC bus health in geostationary satellite power control units. IC Role / Device Role / Timing Role: High-reliability standoff protector on analog voltage sense lines feeding ADC inputs, operating continuously at –55 to +175 °C. Use Value: Voidless hermetic seal prevents outgassing in vacuum; Category 1 bond ensures no failure after 10⁵ thermal cycles; 0.102 %/°C αVBR enables stable threshold over orbit temperature swings. | Use Scenario: Protecting pressure/temperature sensor outputs in deep-well drilling tools exposed to electrostatic discharge during cable handling and explosive ambient gas. IC Role / Device Role / Timing Role: Intrinsically safe interface protector on 4–20 mA loop outputs, certified to ATEX/IECEx Zone 1 requirements via low energy dissipation. Use Value: 150 W PPP safely clamps triboelectric surges without thermal runaway; 340 mg mass allows secure mounting in vibration-prone tool housings; RoHS-compliant plating avoids corrosion in H₂S-rich environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ43A | Surface-mount DO-214AB package; 65 pF capacitance; 43 V VWM; 1500 W PPP rating but higher clamping voltage (69.4 V). | Designed for PCB-level surge suppression in commercial industrial drives; lacks hermetic seal and radiation hardness. | Select when board space is constrained and high-frequency signal integrity is not critical; unsuitable for aerospace or downhole use. |
| 1N6377 | Axial-leaded glass package; 43 V VWM; 150 W PPP; 100 pF capacitance; no Category 1 bond or voidless seal. | General-purpose telecom protection; rated only to +150 °C; no IEC61000-4-5 secondary lightning validation. | Choose for cost-sensitive non-mission-critical applications where 4 pF is unnecessary and extended temperature range is not required. |
Compared with SMCJ43A and 1N6377, MS1N8168US/TR uniquely combines ultra-low 4 pF capacitance, hermetic reliability, and full military-grade temperature/radiation performance-making it irreplaceable in RF-sensing, avionics, and space-qualified systems where signal fidelity and lifetime assurance are non-negotiable.
Availability
MS1N8168US/TR is available at Aetrix Electronics and suitable for radar front-end protection, avionics data bus interface, and satellite power distribution monitoring requiring stable component supply across extended temperature ranges and high-reliability certifications.
Supply support for MS1N8168US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal solutions.
The MS1N8168US/TR belongs to Microsemi's legacy "1N81xx" hermetic TVS family, engineered specifically for defense, aerospace, and oilfield applications demanding zero-failure tolerance, extreme environmental resilience, and verified ESD/lightning immunity.
FAQ
What is the clamping voltage of MS1N8168US/TR at its rated peak impulse current?
The MS1N8168US/TR has a maximum clamping voltage (VC) of 70.1 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured per Microsemi's T4-LDS-xxxx specification and defines the upper voltage limit imposed on protected circuitry during surge events. The MS1N8168US/TR maintains this clamping performance across its full operating temperature range.
Is MS1N8168US/TR suitable for bidirectional transient protection?
No, MS1N8168US/TR is a unidirectional TVS. Bidirectional protection requires two MS1N8168US/TR devices connected in anti-parallel, as documented in Figure 5 of the Microsemi datasheet. This configuration doubles the effective capacitance to 8 pF but retains the same clamping characteristics in both polarities. The MS1N8168US/TR itself conducts only when cathode voltage exceeds anode voltage by ≥48.5 V.
Does MS1N8168US/TR meet IEC61000-4-5 for secondary lightning protection?
Yes, MS1N8168US/TR is validated for secondary lightning protection per select levels of IEC61000-4-5, as stated in the Applications/Benefits section of the Microsemi datasheet. Its 150 W peak pulse power rating and 300 A IPP capability align with Level 3 (1 kV line-to-earth, 2 kV line-to-line) test profiles when implemented with appropriate PCB layout and grounding practices.
What is the thermal resistance junction-to-ambient for MS1N8168US/TR?
The thermal resistance junction-to-ambient (RθJA) of MS1N8168US/TR is 150 °C/W, as specified in the Maximum Ratings table. This value assumes standard PCB mounting with controlled thermal resistance from the lead attachment point to ambient air. Derating is required above 25 °C ambient, per the Figure 3 derating curve in the datasheet, to maintain junction temperature below +175 °C.
How does the "MS" prefix in MS1N8168US/TR indicate its reliability grade?
The "MS" prefix in MS1N8168US/TR denotes JANS (Joint Army-Navy-Specification) qualification-the highest reliability level in Microsemi's nomenclature, intended for space and strategic defense applications. It signifies full compliance with MIL-PRF-19500/505, including 100% screening, lot traceability, and extended environmental testing beyond commercial-grade equivalents.
MS1N8168US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 2.14A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8168US/TR FAQ
1.How can I place an order for MS1N8168US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8168US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8168US/TR reliable?
The price and inventory of MS1N8168US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8168US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8168US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8168US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8168US/TR?
MS1N8168US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8168US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8168US/TR?
For technical support, including MS1N8168US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8168US/TR requirements.
6.How does Aetrix verify that MS1N8168US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8168US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8168US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8168US/TR?
All MS1N8168US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8168US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8168US/TR part is unused and in its original packaging.
Return procedure for MS1N8168US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8168US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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onsemi
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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Diodes Incorporated
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