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Microchip Technology MS1N8169US/TR
- Part No.:
- MS1N8169US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8169US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,426
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Product details
Overview
MS1N8169US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) designed for high-reliability, high-frequency signal line protection. It delivers 150 W peak pulse power at 10/1000 µs, 4 pF capacitance, and a 47.0 V working standoff voltage (VWM), with clamping voltage of 77.0 V at 300 A surge current - ideal for ESD/EFT protection in aerospace and telecom interface circuits.
For engineers reviewing the MS1N8169US/TR datasheet, MS1N8169US/TR pinout, MS1N8169US/TR application, or MS1N8169US/TR equivalent, key selection criteria include low-capacitance transient suppression, Category 1 metallurgical bond reliability, hermetic glass package robustness, and IEC61000-4-2/4-4 compliance for mission-critical signal integrity.
Technical Context
This TVS employs a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF total capacitance while maintaining unidirectional operation. Its hard-glass hermetic construction with internal tungsten slugs and Category 1 metallurgical bonds ensures radiation hardness and thermal stability across –55 °C to +175 °C junction temperature range.
The device operates with 0.5 µA maximum standby current at 47.0 V VWM and achieves 77.0 V clamping voltage (VC) under 300 A IPP surge, enabling precise overvoltage limiting without signal distortion in RF and data-line applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 47.0 V - Maximum continuous reverse standoff voltage before conduction begins; sets operating margin for protected line. |
| VC @ IPP=300 A | 77.0 V - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream IC. |
| PPP | 150 W - Peak pulse power handling at 25 °C; determines survivability against lightning-induced transients. |
| CT | 4 pF - Total small-signal capacitance; enables use on >1 GHz RF lines without impedance mismatch or bandwidth loss. |
| TJ Range | –55 to +175 °C - Junction temperature range; supports operation in avionics, downhole, and space-grade environments. |
| ID @ VWM | 0.5 µA - Reverse leakage at rated standoff; ensures minimal DC loading on high-impedance sensor or reference lines. |
| V(BR) Min | 53.2 V - Minimum breakdown voltage at 1 mA; guarantees turn-on threshold consistency across lot and temperature. |
Pinout & Package
MS1N8169US/TR uses an axial-leaded "A" package (hard-glass hermetic case with tungsten slugs), RoHS-compliant matte tin plating, cathode band marking, and weighs ~340 mg. Mounting is position-independent.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink path during forward conduction | Connected to protected line; conducts surge energy to ground when clamped. |
| Cathode | Reference terminal / polarity indicator | Marked with band; ties to system ground or common return; defines unidirectional blocking direction. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination - critical for 20+ year field life in sealed enclosures. |
| Category 1 metallurgical bond | Internal tungsten-copper interconnect validated per MIL-STD-750 Method 2019 - ensures bond integrity under thermal shock and vibration. |
| Triple-layer passivation | Enhanced surface insulation prevents leakage creepage and surface tracking in high-humidity or contaminated environments. |
| Lowest capacitance for 150 W TVS | 4 pF enables direct placement on 5 Gbps USB 3.2 Gen 2 or PCIe 3.0 differential pairs without signal integrity degradation. |
Applications
| Avionics Data Bus Protection | High-Speed Telecom Interface |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines from induced lightning transients in aircraft avionics bays. IC Role / Device Role / Timing Role: Unidirectional TVS placed inline between bus driver and connector; clamps surges before reaching FPGA or ASIC transceivers. Use Value: 4 pF capacitance avoids skew or jitter on 1 Mbps Manchester-encoded signals; 77.0 V VC limits stress on 5 V tolerant receivers. | Use Scenario: ESD protection on SFP+ cage inputs in 10 GbE optical transceivers exposed to human contact. IC Role / Device Role / Timing Role: Primary front-end transient suppressor on TX/RX differential pairs prior to CDR or laser driver ICs. Use Value: 150 W PPP rating withstands multiple IEC61000-4-2 ±8 kV contact discharges; 0.5 µA ID preserves bias stability of high-Z termination networks. |
| Satellite Command & Telemetry | Downhole Oilfield Instrumentation |
Use Scenario: Shielding RS-485 command links between ground station and LEO satellite subsystems against single-event transients. IC Role / Device Role / Timing Role: Standoff-rated TVS on half-duplex bus lines, operating continuously at 47 V VWM in regulated 48 V supply rails. Use Value: Radiation-hardened construction (MicroNote 050) maintains parametric stability under 100 krad(Si) TID exposure; –55 °C to +175 °C range covers orbital thermal cycling. | Use Scenario: Transient suppression on 4–20 mA sensor loops in high-temperature oil/gas wellhead controllers (150 °C ambient). IC Role / Device Role / Timing Role: Series-mounted TVS on loop-powered analog output lines, directly interfacing with precision DACs and op-amps. Use Value: Hermetic glass package prevents hydrogen embrittlement failure at elevated temperatures; 47 V VWM aligns with 24 V loop supply headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ47A | Surface-mount DO-214AB package; 65 pF capacitance; 1500 W PPP rating but lower reliability grade. | Not suitable for hermetic or radiation-hardened systems; used in commercial industrial controls. | Select only if board space constraints prohibit axial leads and radiation tolerance is not required. |
| 1N6119A | Same axial "A" package; 100 pF capacitance; 150 W PPP; no Category 1 bond or triple passivation. | Lacks low-C performance for >100 MHz applications; limited to legacy telecom or power supply rail protection. | Choose only when cost sensitivity outweighs high-frequency signal integrity requirements. |
Compared with SMCJ47A and 1N6119A, MS1N8169US/TR uniquely combines 4 pF capacitance, hermetic sealing, and Category 1 metallurgical bonding - making it the sole option for high-reliability RF/data-line protection where signal fidelity and long-term parametric stability are non-negotiable.
Availability
MS1N8169US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, high-speed telecom interface design, satellite command & telemetry systems, and downhole oilfield instrumentation requiring stable component supply across extended product lifecycles.
Supply support for MS1N8169US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and radiation-hardened components for aerospace, defense, and industrial markets.
The MS1N81xxUS/TR series belongs to Microsemi's high-reliability transient suppression product line, engineered specifically for mission-critical signal-line protection where failure is not an option - emphasizing hermeticity, low capacitance, and extreme environmental resilience.
FAQ
What is the clamping voltage of MS1N8169US/TR at its rated surge current?
The MS1N8169US/TR has a maximum clamping voltage (VC) of 77.0 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The MS1N8169US/TR maintains this clamping performance across its full operating temperature range due to its stable silicon structure and hermetic packaging.
Is MS1N8169US/TR compliant with IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MS1N8169US/TR provides ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4, as confirmed in Microsemi's official documentation. Its 150 W peak pulse power rating and low clamping voltage ensure reliable suppression of both contact and air-gap discharges up to ±8 kV, and fast repetitive bursts up to 4 kV. The MS1N8169US/TR achieves this without derating in high-temperature environments thanks to its –55 °C to +175 °C junction rating.
Does MS1N8169US/TR have radiation hardness certification?
Yes, MS1N8169US/TR is inherently radiation hard as described in Microsemi MicroNote 050, with documented tolerance to total ionizing dose (TID) up to 100 krad(Si). Its hermetic glass package and Category 1 metallurgical bonds prevent parametric shift under proton and gamma irradiation. This makes MS1N8169US/TR suitable for low-earth orbit satellite telemetry links and nuclear instrumentation where radiation-induced failure must be eliminated.
What is the thermal resistance of MS1N8169US/TR, and how does it affect power dissipation?
The MS1N8169US/TR has a thermal resistance junction-to-ambient (RθJA) of 150 °C/W. This means that at 1.0 W steady-state power dissipation, the junction temperature rises 150 °C above ambient - limiting continuous power handling unless heatsinking is applied. However, the MS1N8169US/TR is designed for transient suppression, not continuous operation; its 150 W peak pulse power rating applies only to short-duration impulses (≤1000 µs), where thermal mass prevents immediate junction overheating.
Can MS1N8169US/TR be used in bidirectional configurations?
MS1N8169US/TR is unidirectional by design, but bidirectional protection can be achieved using two devices in anti-parallel configuration, as shown in Figure 5 of the official datasheet. This arrangement doubles the effective capacitance to 8 pF while preserving low-clamp performance. The MS1N8169US/TR itself does not support bidirectional operation in a single package - attempting reverse-bias conduction beyond VWIB (47.0 V) risks permanent damage.
MS1N8169US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 47V
- Voltage - Breakdown (Min):
- 53.2V
- Voltage - Clamping (Max) @ Ipp:
- 77V
- Current - Peak Pulse (10/1000µs):
- 1.95A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8169US/TR FAQ
1.How can I place an order for MS1N8169US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8169US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8169US/TR reliable?
The price and inventory of MS1N8169US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8169US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8169US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8169US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8169US/TR?
MS1N8169US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8169US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8169US/TR?
For technical support, including MS1N8169US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8169US/TR requirements.
6.How does Aetrix verify that MS1N8169US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8169US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8169US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8169US/TR?
All MS1N8169US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8169US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8169US/TR part is unused and in its original packaging.
Return procedure for MS1N8169US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8169US/TR Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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