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Microchip Technology MS1N8171US/TR
- Part No.:
- MS1N8171US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8171US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,801
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Product details
Overview
MS1N8171US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 4 pF capacitance, 58.0 V working standoff voltage (VWM), and 150 W peak pulse power at 10/1000 µs. It features an internal series rectifier diode for ultra-low capacitance and Category 1 metallurgical bonding for high-reliability aerospace and defense applications.
For engineers reviewing the MS1N8171US/TR datasheet, MS1N8171US/TR pinout, MS1N8171US/TR application, or MS1N8171US/TR equivalent, this device is selected for ESD/EFT protection per IEC61000-4-2/4-4, secondary lightning protection per IEC61000-4-5, and high-frequency signal line protection where low capacitance and radiation hardness are critical.
Technical Context
The MS1N8171US/TR implements a unique dual-element structure: a TVS junction in series with a reverse-oriented rectifier diode, enabling 4 pF total capacitance-lowest among 150 W-rated TVS devices. Its hard-glass hermetic package ensures zero voids and stable performance across -55°C to +175°C junction temperature.
It delivers 11.1 A peak impulse current (IPP) at 58.0 V VWM, clamps to ≤93.7 V at IPP, and exhibits 0.104 %/°C breakdown voltage temperature coefficient. RoHS-compliant matte tin plating and axial-leaded terminals support through-hole mounting with MIL-STD-750 ESD insensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 58.0 V - Maximum continuous reverse standoff voltage before conduction begins |
| VC @ IPP | 93.7 V - Clamping voltage during 11.1 A surge, limiting downstream voltage stress |
| PPP | 150 W - Peak pulse power handling at 10/1000 µs waveform, defining surge robustness |
| CT | 4 pF - Total capacitance at 0 V, enabling >1 GHz signal integrity in RF/data lines |
| TJ Range | -55°C to +175°C - Full military-grade operating range without derating up to 125°C |
| αV(BR) | 0.104 %/°C - Predictable breakdown drift over temperature for precision protection design |
| IIB @ VWIB | 1 µA - Low leakage at 58.0 V inverse blocking, minimizing standby power loss |
Pinout & Package
MS1N8171US/TR uses an axial-leaded "A" package (hard glass, voidless hermetic seal) with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper; weight ≈340 mg. Mounting is position-independent.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line side; conducts only during reverse transients |
| Cathode | Negative terminal; marked with band | Connected to ground or common reference; defines unidirectional clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and long-term parameter drift in harsh environments |
| Category 1 metallurgical bond | Meets MIL-PRF-19500/507 reliability standard for space-qualified components |
| Triple-layer passivation | Prevents surface leakage and enhances stability under high humidity or contamination |
| Radiation hardness | Inherently resistant to TID and SEE per Microsemi MicroNote 050, no shielding required |
| Low 4 pF capacitance | Preserves signal integrity in >1 GHz RF front-ends and high-speed data links |
Applications
| Avionics Data Bus Protection | Satellite RF Front-End Protection |
|---|---|
Use Scenario: Protecting ARINC 429 or MIL-STD-1553B data lines against induced transients in airborne systems. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus line and chassis ground to clamp ESD and lightning-induced surges. Use Value: 4 pF capacitance avoids signal distortion at 1 Mbps baud rate; 150 W rating withstands DO-160 Section 22 Level 4 surges. | Use Scenario: Shielding L-band (1–2 GHz) receiver input stages from antenna-coupled ESD and nearby lightning events. IC Role / Device Role / Timing Role: Low-capacitance TVS shunting RF path to ground during transient events without degrading noise figure. Use Value: 4 pF CT minimizes insertion loss and VSWR shift; hermetic seal prevents outgassing in vacuum. |
| Ground-Based Radar Power Supply Input | Nuclear Facility Sensor Interface |
Use Scenario: Safeguarding DC power inputs of radar transmitter modules exposed to EMP and switching transients. IC Role / Device Role / Timing Role: Standoff-rated TVS on +28 V supply rail to absorb 150 W pulses while maintaining <100 ns response. Use Value: 58.0 V VWM matches 28 V nominal with 2× margin; 175°C max TJ supports conduction-cooled enclosures. | Use Scenario: Protecting analog sensor outputs (e.g., thermocouples, RTDs) in reactor control rooms subject to gamma radiation and EFT. IC Role / Device Role / Timing Role: Radiation-hardened TVS on low-level mV signals to prevent latch-up or parametric shift during irradiation. Use Value: Inherent TID tolerance eliminates need for radiation qualification testing; 1 µA IIB preserves microamp-level accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ58A | Surface-mount SMC package; 65 V VWM; 400 W PPP; 100 pF CT | Higher capacitance limits use to sub-100 MHz circuits; not radiation-hardened | Select when board space is constrained and radiation tolerance is not required |
| 1N6322US | Axial-leaded, same Microsemi family; 56 V VWM; identical 4 pF CT and hermetic construction | Lower VWM suits 48 V telecom systems; same reliability level and test flow | Select when 56 V standoff better matches system operating voltage |
Compared with SMCJ58A and 1N6322US, MS1N8171US/TR uniquely combines 58.0 V VWM, 4 pF capacitance, hermetic sealing, and inherent radiation hardness-making it irreplaceable in mission-critical avionics and space electronics where parameter stability under extreme stress is non-negotiable.
Availability
MS1N8171US/TR is available at Aetrix Electronics and suitable for avionics data bus protection, satellite RF front-end protection, and nuclear facility sensor interface applications requiring stable component supply across extended product lifecycles.
Supply support for MS1N8171US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure ICs for aerospace, defense, and industrial markets.
The MS1N8171US/TR belongs to Microsemi's 1N8149–1N8182 TVS family, engineered specifically for ultra-low-capacitance transient suppression in high-frequency, high-reliability systems where failure is not an option.
FAQ
What is the maximum clamping voltage of MS1N8171US/TR at its rated peak impulse current?
The MS1N8171US/TR clamps to a maximum of 93.7 V when subjected to its rated 11.1 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25°C ambient and defines the upper voltage limit imposed on protected circuitry during a surge event. The clamping performance remains stable across the full -55°C to +175°C junction temperature range due to the device's low temperature coefficient.
Is MS1N8171US/TR suitable for bidirectional transient protection?
No, MS1N8171US/TR is a unidirectional TVS. For bidirectional protection, two MS1N8171US/TR devices must be connected in anti-parallel configuration, as documented in Figure 5 of the datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same 150 W surge rating per polarity. A single MS1N8171US/TR provides protection only against negative transients on the cathode side.
Does MS1N8171US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MS1N8171US/TR is specified for ESD protection per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its low 4 pF capacitance and sub-100 ns response time enable effective suppression of ±8 kV contact and ±15 kV air discharge ESD events, as well as 4 kV burst transients. Test validation is performed per Microsemi's internal qualification protocol aligned with these standards.
What is the lead finish and plating specification for MS1N8171US/TR?
MS1N8171US/TR features RoHS-compliant matte tin plating over copper leads, as indicated by the "e3" suffix in its nomenclature. The plating meets J-STD-006 requirements and supports both wave and hand soldering at 260°C for 10 seconds maximum. Lead material is oxygen-free copper with tungsten slugs for thermal and mechanical robustness in the hermetic glass package.
How does the "MS" prefix in MS1N8171US/TR denote its reliability grade?
The "MS" prefix in MS1N8171US/TR indicates compliance with the JANS (Joint Army-Navy-Specification) level, meaning it is screened and qualified to MIL-PRF-19500/507 for space and high-reliability defense applications. This includes extended temperature cycling, hermeticity testing, and lot traceability-distinct from commercial ("blank") or JANTXV-grade parts. The "US" denotes the axial-leaded "A" package variant.
MS1N8171US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 93.7V
- Current - Peak Pulse (10/1000µs):
- 1.6A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8171US/TR FAQ
1.How can I place an order for MS1N8171US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8171US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8171US/TR reliable?
The price and inventory of MS1N8171US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8171US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8171US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8171US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8171US/TR?
MS1N8171US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8171US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8171US/TR?
For technical support, including MS1N8171US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8171US/TR requirements.
6.How does Aetrix verify that MS1N8171US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8171US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8171US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8171US/TR?
All MS1N8171US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8171US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8171US/TR part is unused and in its original packaging.
Return procedure for MS1N8171US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8171US/TR Tags
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