My Inquiry
My Account
Microchip Technology MS1N8172US/TR
- Part No.:
- MS1N8172US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8172US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,400
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MS1N8172US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 64.0 V working standoff voltage (VWM), 103.0 V clamping voltage (VC) at 300 A peak impulse current, 4 pF capacitance, and 150 W peak pulse power rating. It employs a series-connected rectifier diode architecture to achieve ultra-low capacitance for high-frequency signal line protection in aerospace and defense systems.
For engineers reviewing the MS1N8172US/TR datasheet, MS1N8172US/TR pinout, MS1N8172US/TR application, or MS1N8172US/TR equivalent, key selection criteria include its Category 1 metallurgical bond reliability, RoHS-compliant matte tin plating, axial-leaded glass package, and IEC61000-4-2/4-4/4-5 compliance for ESD, EFT, and secondary lightning protection.
Technical Context
This TVS uses a unique dual-element structure: a low-capacitance TVS junction paired with an anti-series rectifier diode to suppress reverse leakage while maintaining 4 pF total capacitance. Its hard-glass hermetic seal and tungsten slug construction enable operation from −55 °C to +175 °C with Category 1 internal metallurgical bonds for radiation-hardened environments.
The device delivers 103.0 V clamping voltage at 300 A (10/1000 µs waveform), with 0.5 µA standby current at 64.0 V VWM and a 0.105 %/°C breakdown voltage temperature coefficient. It is rated for 1.0 W steady-state power dissipation at 25 °C ambient with 150 °C/W thermal resistance junction-to-ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 64.0 V - Maximum continuous reverse-biased operating voltage before conduction begins |
| VC @ IPP | 103.0 V at 300 A - Clamped voltage during 10/1000 µs surge, limiting downstream circuit stress |
| CT | 4 pF - Enables protection of >1 GHz RF lines and high-speed data interfaces without signal distortion |
| PPP | 150 W - Peak transient energy absorption capability under standard 10/1000 µs waveform |
| TJ Range | −55 °C to +175 °C - Supports operation in extended-temperature avionics and downhole electronics |
| RθJA | 150 °C/W - Thermal limit defines PCB copper area requirements for 1.0 W continuous power handling |
| ID @ VWM | 0.5 µA - Ultra-low leakage preserves signal integrity in high-impedance sensor front-ends |
Pinout & Package
MS1N8172US/TR is housed in an axial-leaded, voidless hermetically sealed hard-glass package with tungsten slugs and cathode band polarity marking. Leads are matte tin-plated copper per RoHS compliance (e3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink (reverse-biased) | Connected to protected line; conducts surge current to ground when V > VWM |
| Cathode | Reference terminal (marked with band) | Connected to system ground; establishes unidirectional clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Internal wirebond construction qualified for high-reliability aerospace and military applications per MIL-STD-883 |
| Triple-layer passivation | Enhanced surface stability against humidity, contamination, and long-term bias stress in harsh environments |
| Voidless hermetic seal | Eliminates internal moisture migration and corrosion risk over 20+ year service life |
| Lowest capacitance for 150 W TVS | 4 pF enables protection of GPS L1/L2, SATCOM, and radar receiver front-ends without degrading noise figure |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) per Microsemi MicroNote 050, suitable for space-grade designs |
Applications
| GPS Receiver Front-End Protection | Aerospace Data Bus Line Protection |
|---|---|
Use Scenario: Protecting L1-band (1575.42 MHz) antenna input of airborne GPS receivers from ESD and induced transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between antenna feed and LNA input to clamp surges while preserving RF impedance match. Use Value: 4 pF capacitance avoids detuning of 50 Ω matching network; 103.0 V clamping prevents LNA saturation or damage during lightning-induced coupling. | Use Scenario: Safeguarding ARINC 429 or MIL-STD-1553B data lines in flight control computers against EFT and coupling events. IC Role / Device Role / Timing Role: Standoff-rated TVS on each differential data line to absorb fast transients without distorting <1 Mbps digital waveforms. Use Value: 0.5 µA leakage ensures no DC loading of bus terminators; 150 W rating handles worst-case coupled surges per DO-160 Section 22. |
| Downhole Telemetry Interface | Satellite Command & Telemetry Link |
Use Scenario: Transient suppression on RS-485 telemetry links deployed in oil/gas wellhead controllers operating at 175 °C ambient. IC Role / Device Role / Timing Role: High-temperature-rated TVS on bidirectional half-duplex bus, mounted directly at connector entry point. Use Value: −55 °C to +175 °C junction range eliminates derating concerns; hermetic glass package withstands H2S and high-pressure hydrocarbon exposure. | Use Scenario: Protecting S-band uplink/downlink RF switches and modulators in LEO satellite payloads from launch-induced ESD and TID effects. IC Role / Device Role / Timing Role: Radiation-hardened TVS on DC bias lines feeding GaAs MMICs to prevent latch-up during single-event transients. Use Value: Category 1 bond and inherent radiation tolerance eliminate need for shielding or redundancy; 4 pF avoids resonance with bias-T inductors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ64A | Surface-mount DO-214AB package; 64 V VWM; 103 V VC; 400 W PPP; 100 pF CT | Higher capacitance limits use to sub-100 MHz applications; unsuitable for RF front-ends | Select only for cost-sensitive industrial PCBs where layout space allows larger footprint and RF performance is not required |
| 1N6157A | Axial-leaded DO-41; 64 V VWM; 103 V VC; 150 W PPP; 100 pF CT; commercial-grade reliability | Lacks Category 1 bond, triple passivation, and radiation hardness; not qualified for aerospace use | Acceptable for terrestrial telecom infrastructure where environmental stress and lifetime are less extreme |
Compared with SMCJ64A and 1N6157A, MS1N8172US/TR uniquely combines 4 pF capacitance, hermetic sealing, Category 1 bonding, and radiation hardness-making it the only option for RF-critical, high-reliability, extended-temperature deployments.
Availability
MS1N8172US/TR is available at Aetrix Electronics and suitable for GPS receiver front-ends, aerospace data buses, and downhole telemetry interfaces requiring stable component supply across extended product lifecycles.
Supply support for MS1N8172US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and security-focused analog and mixed-signal ICs and discrete components.
The MS1N8172US/TR belongs to Microsemi's legacy 1N81xx family of hermetically sealed TVS diodes, engineered specifically for mission-critical protection in aerospace, defense, and oilfield electronics where failure is not an option.
FAQ
What is the clamping voltage of MS1N8172US/TR at its rated peak impulse current?
The MS1N8172US/TR has a maximum clamping voltage (VC) of 103.0 V at 300 A peak impulse current under the 10/1000 µs waveform. This value is measured per the test conditions defined in Microsemi's T4-LDS-xxxx datasheet and ensures predictable voltage limiting during surge events without exceeding safe stress levels for downstream components in the protected circuit.
Is MS1N8172US/TR suitable for high-frequency RF applications?
Yes, MS1N8172US/TR is explicitly designed for high-frequency RF applications due to its 4 pF total capacitance-the lowest available for a 150 W TVS. This enables use in GPS L1/L2, SATCOM, and radar receiver front-ends without degrading insertion loss, VSWR, or noise figure, as confirmed by Microsemi's characterization in the 1N8149–1N8182 datasheet.
Does MS1N8172US/TR meet aerospace reliability standards?
Yes, MS1N8172US/TR incorporates Category 1 internal metallurgical bonds, triple-layer passivation, and voidless hermetic glass packaging-features qualified per MIL-STD-883 and referenced in Microsemi MicroNote 050 for radiation hardness. These attributes make MS1N8172US/TR appropriate for JANS-level aerospace and defense applications.
What is the maximum operating temperature range for MS1N8172US/TR?
The MS1N8172US/TR is rated for junction and storage temperatures from −55 °C to +175 °C. This extended range supports deployment in downhole tools, engine-mounted avionics, and space-qualified electronics where thermal extremes exceed commercial or industrial grade specifications.
How does the series rectifier diode architecture in MS1N8172US/TR reduce capacitance?
The MS1N8172US/TR integrates a unique rectifier diode in series and opposite direction to the TVS junction. This configuration blocks parasitic capacitance paths that dominate conventional TVS structures, achieving 4 pF total capacitance-verified in the datasheet's Electrical Characteristics table and critical for preserving signal integrity in >1 GHz applications.
MS1N8172US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 1.45A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8172US/TR FAQ
1.How can I place an order for MS1N8172US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8172US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8172US/TR reliable?
The price and inventory of MS1N8172US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8172US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8172US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8172US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8172US/TR?
MS1N8172US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8172US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8172US/TR?
For technical support, including MS1N8172US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8172US/TR requirements.
6.How does Aetrix verify that MS1N8172US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8172US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8172US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8172US/TR?
All MS1N8172US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8172US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8172US/TR part is unused and in its original packaging.
Return procedure for MS1N8172US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8172US/TR Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
