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Microchip Technology MS1N8173US/TR
- Part No.:
- MS1N8173US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8173US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:6,166
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Product details
Overview
MS1N8173US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 77.9 V minimum breakdown voltage, 70 V working standoff voltage, 113 V maximum clamping voltage at 300 A peak impulse current, 4 pF capacitance, and 150 W peak pulse power rating. It protects high-frequency signal lines in aerospace, defense, and industrial control systems where failure tolerance and radiation hardness are critical.
For engineers reviewing the MS1N8173US/TR datasheet, MS1N8173US/TR pinout, MS1N8173US/TR application, or MS1N8173US/TR equivalent, key selection criteria include low-capacitance ESD/IEC61000-4-2 protection, Category 1 metallurgical bond reliability, hermetic glass package robustness, and compatibility with axial-leaded through-hole mounting in high-reliability PCBs.
Technical Context
This TVS uses a unique series-connected rectifier diode in anti-parallel configuration to achieve ultra-low 4 pF capacitance while maintaining unidirectional surge suppression. Its hard-glass hermetic construction incorporates internal tungsten slugs and Category 1 metallurgical bonds for radiation hardness per MicroNote 050 and MIL-STD-750 compliance.
Rated for 150 W peak pulse power at 10/1000 µs waveform, it delivers 300 A peak impulse current with 113 V clamping voltage at 25 °C ambient. Thermal resistance is 150 °C/W junction-to-ambient, and operating junction temperature spans −55 °C to +175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 77.9 V min at 1 mA - defines minimum voltage at which avalanche conduction begins reliably |
| Working Standoff Voltage (VWM) | 70 V max - maximum continuous reverse voltage before leakage exceeds 0.5 µA |
| Clamping Voltage (VC) | 113 V max at 300 A - limits transient voltage seen by protected circuit during surge |
| Peak Pulse Power (PPP) | 150 W at 10/1000 µs - sustains high-energy transients without degradation |
| Capacitance (CT) | 4 pF at 0 V - enables use in >1 GHz RF and high-speed data lines without signal distortion |
| Junction Temperature Range | −55 °C to +175 °C - supports operation in extreme environments including space-grade thermal cycling |
| Surge Current (IPP) | 300 A at 10/1000 µs - withstands lightning-induced surges per IEC61000-4-5 Level 3 |
Pinout & Package
MS1N8173US/TR uses an axial-leaded hermetically sealed hard-glass package with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin over copper; weight ≈340 mg. Mounting is position-independent.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive terminal under forward bias | Connected to protected line's signal path; conducts only during reverse-transient clamping |
| Cathode | Negative terminal with band marking | Connected to ground or common reference; establishes unidirectional clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and long-term parameter drift in humid or vacuum environments |
| Category 1 metallurgical bond | Ensures mechanical integrity and radiation tolerance per MIL-STD-750 Method 2025 |
| Triple-layer passivation | Reduces surface leakage and enhances stability under high-humidity or contamination stress |
| Low 4 pF capacitance | Minimizes insertion loss and phase shift in RF front-ends and high-speed serial links |
| RoHS-compliant option (e3) | Meets EU Directive 2011/65/EU without compromising surge performance or reliability |
Applications
| Radar Transceiver Front-End Protection | Satellite Command & Data Handling (C&DH) |
|---|---|
Use Scenario: Protecting L-band RF receiver inputs from induced lightning transients and ESD events during launch and orbital operation. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between antenna feedline and low-noise amplifier input. Use Value: 4 pF capacitance avoids detuning of impedance-matched 50 Ω RF path; 113 V clamping preserves LNA input stage integrity under 300 A surges. | Use Scenario: Safeguarding MIL-STD-1553B bus receivers against EFT bursts and secondary lightning coupling in spacecraft avionics bays. IC Role / Device Role / Timing Role: Standoff-rated TVS on data line inputs, leveraging 70 V VWM to tolerate bus common-mode swings while clamping fast edges. Use Value: −55 °C to +175 °C operation ensures functionality across orbital thermal extremes; Category 1 bond prevents interfacial failure during vibration and radiation exposure. |
| Industrial Programmable Logic Controller (PLC) Analog Inputs | Military Vehicle CAN Bus Node Protection |
Use Scenario: Shielding 4–20 mA current-loop sensor interfaces from 4 kV ESD (IEC61000-4-2) and 2 kV EFT (IEC61000-4-4) in factory-floor environments. IC Role / Device Role / Timing Role: Primary-level TVS on loop-powered analog input terminals, mounted directly at connector entry point. Use Value: 150 W pulse rating handles repetitive industrial switching noise; hermetic seal prevents corrosion from oil mist and coolant vapors. | Use Scenario: Adding secondary surge immunity to CAN_H/CAN_L lines in armored vehicle ECUs exposed to EMP and ignition noise. IC Role / Device Role / Timing Role: Unidirectional TVS pair (anode-to-anode) on each line, exploiting low capacitance to preserve CAN FD bit timing up to 5 Mbps. Use Value: 4 pF total capacitance per line avoids CAN bus timing skew; 300 A surge rating exceeds ISO 7637-2 Pulse 5a requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ70A | Surface-mount DO-214AB package; 70 V VWM; 100 W PPP; 100 pF CT | Lacks hermetic seal, Category 1 bond, and radiation hardness; unsuitable for space or nuclear-grade use | Select when cost-sensitive commercial designs require SMT assembly and lower surge energy suffices |
| 1N6377 | Axial-leaded glass package; 70 V VWM; 150 W PPP; 15 pF CT; no Category 1 bond | Higher capacitance degrades RF performance; no documented radiation hardness or MIL-STD-750 qualification | Choose for legacy industrial repairs where 4 pF is not required and radiation tolerance is not mandated |
Compared with SMCJ70A and 1N6377, MS1N8173US/TR uniquely combines axial-leaded reliability, 4 pF capacitance, hermetic sealing, and Category 1 metallurgical bonding-making it irreplaceable in mission-critical RF and aerospace transient protection where signal fidelity and long-term parametric stability are non-negotiable.
Availability
MS1N8173US/TR is available at Aetrix Electronics and suitable for radar front-end protection, satellite C&DH systems, and industrial PLC analog input circuits requiring stable component supply across extended product lifecycles and harsh environmental conditions.
Supply support for MS1N8173US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and secure ICs for aerospace, defense, and industrial markets.
The MS1N8173US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for fail-safe transient protection in systems where field failure is unacceptable-especially in space, avionics, and nuclear instrumentation.
FAQ
What is the clamping voltage of MS1N8173US/TR at its rated peak impulse current?
The MS1N8173US/TR has a maximum clamping voltage (VC) of 113 V at 300 A peak impulse current (IPP) under the standard 10/1000 µs waveform. This value is measured at 25 °C ambient and ensures downstream circuitry remains within safe voltage limits during surge events. The MS1N8173US/TR maintains this clamping performance across its full operating temperature range due to its hard-glass hermetic construction and stable avalanche characteristics.
Is MS1N8173US/TR suitable for bidirectional transient protection?
No, MS1N8173US/TR is a unidirectional TVS diode. For bidirectional protection, two MS1N8173US/TR devices must be connected in anti-parallel configuration, as shown in Figure 5 of the original datasheet. This arrangement doubles the effective capacitance to 8 pF but retains the same clamping behavior in both polarities. The MS1N8173US/TR itself is not rated for reverse conduction beyond its specified VWM and IIB limits.
Does MS1N8173US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes, MS1N8173US/TR provides ESD protection per IEC61000-4-2 and EFT protection per IEC61000-4-4, as explicitly stated in the Applications/Benefits section of its datasheet. Its 4 pF capacitance and fast response enable effective suppression of 8 kV contact and 15 kV air-discharge ESD events, while its 150 W pulse rating handles repetitive electrical fast transients up to 4 kV. The MS1N8173US/TR achieves this without derating in high-humidity or high-radiation environments.
What does the "MS" prefix in MS1N8173US/TR signify?
The "MS" prefix in MS1N8173US/TR indicates JANS-level reliability qualification per MIL-PRF-19500/516, designating it for space-qualified, high-reliability applications. This includes rigorous screening for burn-in, temperature cycling, and hermeticity testing. The "US" suffix denotes the axial-leaded surface-mount-compatible variant, and "/TR" specifies tape-and-reel packaging per EIA-296. The MS1N8173US/TR is fully traceable to lot-controlled manufacturing with full test data available upon request.
How does the 4 pF capacitance of MS1N8173US/TR compare to standard TVS diodes?
The 4 pF capacitance of MS1N8173US/TR is among the lowest available for a 150 W-rated TVS diode-typically 25× lower than standard DO-15 or SMA packages (e.g., 100 pF). This is achieved via a patented series-connected rectifier structure that cancels parasitic capacitance. As a result, the MS1N8173US/TR introduces negligible loading on RF traces, high-speed data lines, or precision analog paths, whereas conventional TVS devices would cause signal attenuation or timing jitter. This makes the MS1N8173US/TR uniquely suited for L-band radar and high-fidelity sensor interfaces.
MS1N8173US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 70V
- Voltage - Breakdown (Min):
- 77.9V
- Voltage - Clamping (Max) @ Ipp:
- 113V
- Current - Peak Pulse (10/1000µs):
- 1.32A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8173US/TR FAQ
1.How can I place an order for MS1N8173US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8173US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8173US/TR reliable?
The price and inventory of MS1N8173US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8173US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8173US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8173US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8173US/TR?
MS1N8173US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8173US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8173US/TR?
For technical support, including MS1N8173US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8173US/TR requirements.
6.How does Aetrix verify that MS1N8173US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8173US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8173US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8173US/TR?
All MS1N8173US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8173US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8173US/TR part is unused and in its original packaging.
Return procedure for MS1N8173US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8173US/TR Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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