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Microchip Technology MS1N8174US/TR
- Part No.:
- MS1N8174US/TR
- Manufacturer:
- Microchip Technology
- Category:
- TVS Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
MS1N8174US/TR.pdf
- Description:
- LOW CAPACITANCE TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,211
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Product details
Overview
MS1N8174US/TR from Microsemi is a voidless-hermetically-sealed unidirectional transient voltage suppressor (TVS) with 75 V working standoff voltage (VWM), 113 V peak clamping voltage (VC) at 300 A IPP, 4 pF capacitance, and 150 W peak pulse power rating for high-frequency signal line protection in aerospace and defense systems.
For engineers reviewing the MS1N8174US/TR datasheet, MS1N8174US/TR pinout, MS1N8174US/TR application, or MS1N8174US/TR equivalent, this device delivers ultra-low capacitance ESD/IEC61000-4-2 protection with Category 1 metallurgical bonding, hard-glass hermetic sealing, and axial-leaded through-hole mounting for mission-critical reliability.
Technical Context
The MS1N8174US/TR integrates a unique series-opposed rectifier diode to achieve 4 pF total capacitance-lowest among 150 W TVS devices-enabling use in >1 GHz RF front-ends and high-baud-rate data links without signal integrity degradation.
It operates across –55 °C to +175 °C junction temperature, features triple-layer passivation, RoHS-compliant matte tin plating, and meets IEC61000-4-2 (ESD), IEC61000-4-4 (EFT), and select IEC61000-4-5 (lightning) immunity standards as a primary or secondary protection element.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75 V - Maximum continuous reverse standoff voltage before conduction; sets operating margin for protected lines. |
| VC @ IPP=300 A | 113 V - Clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by downstream ICs. |
| CT | 4 pF - Total diode capacitance at 0 V; enables <1% signal attenuation up to 1.5 GHz in 50 Ω systems. |
| PPP | 150 W - Peak pulse power handling at 25 °C; supports repeated lightning-like transients per IEC61000-4-5 Level 3. |
| TJ Range | –55 to +175 °C - Full military-grade thermal range; validated for space-grade thermal cycling and burn-in. |
| RθJA | 150 °C/W - Junction-to-ambient thermal resistance; requires minimal PCB copper area for steady-state 1.0 W dissipation. |
| V(BR) Min | 86.5 V - Minimum breakdown voltage at 1 mA; ensures tight tolerance window for precise clamping onset. |
Pinout & Package
MS1N8174US/TR uses an axial-leaded hermetically sealed hard-glass package with cathode band marking. Leads are tin/lead or RoHS-compliant matte tin-plated copper. Weight: ~340 mg. Dimensions: BD = 0.060–0.085", BL = 0.106–0.175", LD = 0.028–0.032", LL = 0.800–1.300".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current sink input | Connected to protected signal line; conducts surge current toward cathode during overvoltage events. |
| Cathode | Clamped output reference | Connected to ground or low-impedance return path; establishes clamping reference and carries full IPP current. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under thermal shock or vacuum exposure. |
| Category 1 metallurgical bond | Validated interfacial bond strength per MIL-STD-883 method 2011.9 for radiation-hardened and high-reliability applications. |
| Series-opposed rectifier topology | Enables 4 pF capacitance while maintaining unidirectional clamping behavior and low leakage (<0.5 µA at VWM). |
| Nonsensitive to ESD (MIL-STD-750 Method 1020) | Withstands >30 kV HBM without parameter shift-critical for handling in cleanroom and flight hardware assembly. |
Applications
| Radar RF Front-End Protection | Satellite Telemetry Interface |
|---|---|
Use Scenario: Protecting L-band receive amplifiers from induced lightning surges and antenna coupling transients in airborne radar systems. IC Role / Device Role / Timing Role: Unidirectional TVS placed directly at SMA connector feedthrough to clamp sub-100 ns transients before low-noise amplifier input. Use Value: 4 pF capacitance prevents insertion loss or VSWR degradation above 1.2 GHz; 113 V VC limits damage to GaAs MMICs rated for 120 V absolute max. | Use Scenario: Shielding RS-422 telemetry links between satellite bus and payload modules against ESD and launch-induced EFT. IC Role / Device Role / Timing Role: Primary protection on differential pair inputs of isolated UART transceivers in radiation-tolerant avionics stacks. Use Value: 150 W PPP rating sustains multiple 300 A impulses per mission; Category 1 bond ensures survivability after 100+ thermal cycles from –55 °C to +125 °C. |
| Military Data Bus Node | Nuclear Instrumentation Signal Conditioning |
Use Scenario: Safeguarding MIL-STD-1553B bus terminators and transceivers from EMP-induced line surges in armored vehicle electronics. IC Role / Device Role / Timing Role: Through-hole mounted TVS on each stub line near bus controller IC, with cathode tied to chassis ground via short trace. Use Value: Axial-leaded mechanical robustness withstands vibration >20 g RMS; 75 V VWM matches 1553B ±27 V common-mode range with 2× safety margin. | Use Scenario: Protecting gamma spectrometer preamplifier inputs from electrostatic discharge during sensor probe handling in nuclear facilities. IC Role / Device Role / Timing Role: First-stage clamping element on coaxial input path before charge-sensitive amplifier, minimizing noise contribution. Use Value: 0.5 µA ID at 75 V ensures no DC offset drift in femtoamp-level signal paths; hermetic seal prevents outgassing contamination in vacuum chambers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMCJ75A | Surface-mount DO-214AB package; 65 pF capacitance; 1500 W PPP rating but higher clamping (121 V). | Designed for board-level surge suppression on power rails-not RF signal lines. | Select when PCB space is constrained and RF bandwidth <100 MHz; avoid for >500 MHz applications due to capacitance. |
| 1N6322 | Axial-leaded, 75 V VWM, but 100 pF CT and 100 W PPP; non-hermetic epoxy package. | Lacks Category 1 bond and MIL-STD-750 ESD immunity; unsuitable for space or nuclear environments. | Acceptable for commercial industrial controls where cost matters more than radiation hardness or vacuum compatibility. |
Compared with SMCJ75A and 1N6322, the MS1N8174US/TR uniquely combines hermetic sealing, 4 pF capacitance, and Category 1 bonding-making it the only option qualified for RF front-end protection in flight-critical and radiation-intensive deployments.
Availability
MS1N8174US/TR is available at Aetrix Electronics and suitable for radar RF front-ends, satellite telemetry interfaces, and military data bus nodes requiring stable component supply with guaranteed long-term obsolescence management.
Supply support for MS1N8174US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and hermetically sealed components.
The MS1N8174US/TR belongs to Microsemi's 1N8149–1N8182 family of voidless-hermetically-sealed TVS diodes engineered specifically for ESD and lightning protection in mission-critical RF and telemetry systems where failure is not an option.
FAQ
What is the maximum clamping voltage of the MS1N8174US/TR at its rated surge current?
The MS1N8174US/TR has a maximum peak clamping voltage (VC) of 113 V when subjected to a 300 A peak impulse current (IPP) with a 10/1000 µs waveform. This value is measured at 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The MS1N8174US/TR maintains this clamping performance across its full operating temperature range due to its stable silicon junction and hermetic construction.
Is the MS1N8174US/TR suitable for bidirectional transient protection?
No-the MS1N8174US/TR is a unidirectional TVS diode optimized for single-polarity surge suppression. For bidirectional protection, two MS1N8174US/TR devices must be connected in anti-parallel configuration, as documented in Microsemi Application Figure 5. This arrangement doubles the effective capacitance to 8 pF but preserves the low-clamping, high-reliability characteristics of the original device.
Does the MS1N8174US/TR meet IEC61000-4-2 and IEC61000-4-4 standards?
Yes-the MS1N8174US/TR is explicitly rated for ESD immunity per IEC61000-4-2 and electrical fast transient (EFT) immunity per IEC61000-4-4. Its 4 pF capacitance, low leakage (<0.5 µA), and fast response time enable compliance in both test configurations. The MS1N8174US/TR also provides secondary lightning protection per select levels of IEC61000-4-5 when used with appropriate series impedance.
What does the "MS" prefix in MS1N8174US/TR signify?
The "MS" prefix in MS1N8174US/TR denotes Microsemi's JANS (Joint Army-Navy-Specification) qualification level-indicating compliance with MIL-PRF-19500/507 for space-qualified, high-reliability semiconductor devices. This includes rigorous screening for radiation hardness, thermal cycling, mechanical shock, and hermeticity, distinguishing it from commercial-grade variants like 1N8174US/TR without the "MS" prefix.
Can the MS1N8174US/TR be used in vacuum or space environments?
Yes-the MS1N8174US/TR is explicitly designed for vacuum and space applications. Its voidless hermetically sealed hard-glass package prevents outgassing, and its Category 1 metallurgical bond meets MIL-STD-883 requirements for interfacial integrity under thermal vacuum cycling. Radiation hardness is confirmed per Microsemi MicroNote 050, making the MS1N8174US/TR suitable for low-Earth orbit and deep-space missions.
MS1N8174US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Package/Case:
- SQ-MELF, A
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 86.5V
- Voltage - Clamping (Max) @ Ipp:
- 125V
- Current - Peak Pulse (10/1000µs):
- 1.2A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
MS1N8174US/TR FAQ
1.How can I place an order for MS1N8174US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for MS1N8174US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MS1N8174US/TR reliable?
The price and inventory of MS1N8174US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MS1N8174US/TR is usually 5 days.
3.What payment methods are accepted for MS1N8174US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MS1N8174US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MS1N8174US/TR?
MS1N8174US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MS1N8174US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MS1N8174US/TR?
For technical support, including MS1N8174US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MS1N8174US/TR requirements.
6.How does Aetrix verify that MS1N8174US/TR is sourced from the original manufacturer or authorized distributors?
All MS1N8174US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MS1N8174US/TR meets industry standards.
7.What is the process for return or replacement of MS1N8174US/TR?
All MS1N8174US/TR units undergo pre-shipment inspection (PSI). If there is an issue with MS1N8174US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MS1N8174US/TR part is unused and in its original packaging.
Return procedure for MS1N8174US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MS1N8174US/TR Tags
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